yee-chia documents

Everything Went Wrong That Morning
Documents Everything Went Wrong That Morning
CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In0.53Ga0.47As n-MOSFETs
Documents CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In0.53Ga0.47As n-MOSFETs
A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET
Documents A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET
Enhancing CMOS transistor performance using lattice-mismatched materials in source/drain regions
Documents Enhancing CMOS transistor performance using lattice-mismatched materials in source/drain regions
$\hbox{Ni}(\hbox{Ge}_{1 - x}\hbox{Sn}_{x})$ Ohmic Contact Formation on N-Type $\hbox{Ge}_{1 - x}\hbox{Sn}_{x}$ Using Selenium or Sulfur Implant and Segregation
Documents $\hbox{Ni}(\hbox{Ge}_{1 - x}\hbox{Sn}_{x})$ Ohmic Contact Formation on N-Type $\hbox{Ge}_{1 - x}\hbox{Sn}_{x}$ Using Selenium or Sulfur Implant and Segregation
[IEEE 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2011.04.25-2011.04.27)] Proceedings of 2011 International Symposium on
Documents [IEEE 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2011.04.25-2011.04.27)] Proceedings of 2011 International Symposium on
Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
Documents Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
Phase Change Liner Stressor for Strain Engineering of P-Channel FinFETs
Documents Phase Change Liner Stressor for Strain Engineering of P-Channel FinFETs
Phase Change Random Access Memory Devices with Nickel Silicide and Platinum Silicide Electrode Contacts for Integration with CMOS Technology
Documents Phase Change Random Access Memory Devices with Nickel Silicide and Platinum Silicide Electrode Contacts for Integration with CMOS Technology
Germanium Multiple-Gate Field-Effect Transistors Formed on Germanium-on-Insulator Substrate
Documents Germanium Multiple-Gate Field-Effect Transistors Formed on Germanium-on-Insulator Substrate
Source/Drain Engineering for In 0.7 Ga 0.3 As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction
Documents Source/Drain Engineering for In 0.7 Ga 0.3 As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction
[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Novel Nickel-Alloy Silicides for Source/Drain
Documents [IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Novel Nickel-Alloy Silicides for Source/Drain
Simulation and design of a germanium L-shaped impact-ionization MOS transistor
Documents Simulation and design of a germanium L-shaped impact-ionization MOS transistor
Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide
Documents Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide
[IEEE 2013 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Columbus, OH, USA (2013.10.27-2013.10.29)] The 1st IEEE Workshop on Wide Bandgap Power Devices and
Documents [IEEE 2013 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Columbus, OH, USA (2013.10.27-2013.10.29)] The 1st IEEE Workshop on Wide Bandgap Power Devices and
[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS)
Documents [IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS)
[IEEE 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2011.04.25-2011.04.27)] Proceedings of 2011 International Symposium on
Documents [IEEE 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2011.04.25-2011.04.27)] Proceedings of 2011 International Symposium on
Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications
Documents Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications
Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxy
Documents Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxy
Compositional dependence of optical critical point parameters in pseudomorphic GeSn alloys
Documents Compositional dependence of optical critical point parameters in pseudomorphic GeSn alloys
III–V Multiple-Gate Field-Effect Transistors With High-Mobility $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Channel and Epi-Controlled Retrograde-Doped Fin
Documents III–V Multiple-Gate Field-Effect Transistors With High-Mobility $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Channel and Epi-Controlled Retrograde-Doped Fin