StrongIRFET™ IRF7480MTRPbF

Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters

Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Lead-Free, RoHS Compliant

Base part number Package Type Standard Pack

Form Quantity

IRF7480MPbF DirectFET® ME Tape and Reel 4800 IRF7480MTRPbF

Orderable Part Number

VDSS 40V

RDS(on) typ. 0.95m max 1.20m

ID (Silicon Limited) 217A

ID (double-sided cooling) 330A

Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature

DirectFET® ISOMETRIC

ME

DirectFET® N-Channel Power MOSFET

1 2016-5-4

D DS

GS S

S S

S

4 6 8 10 12 14 16 18 20

VGS, Gate -to -Source Voltage (V)

0.5

1.0

1.5

2.0

2.5

3.0

RD

S(o

n),

Dra

in-t

o -S

ourc

e O

n R

esis

tanc

e (m

)

ID = 132A

TJ = 25°C

TJ = 125°C

25 50 75 100 125 150

TC , Case Temperature (°C)

0

25

50

75

100

125

150

175

200

225

I D,

Dra

in C

urre

nt (

A)

IRF7480MTRPbF

2 2016-5-4

Notes: Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Used double sided cooling , mounting pad with large heatsink.

Absolute Maximum Ratings

Symbol Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 217

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 137 A IDM Pulsed Drain Current 868

PD @TC = 25°C Maximum Power Dissipation 96 W Linear Derating Factor 0.77 W/°C VGS Gate-to-Source Voltage ± 20 V TJ Operating Junction and -55 to + 150

°C TSTG Storage Temperature Range

Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy 81 EAS (Thermally limited) Single Pulse Avalanche Energy 206 IAR Avalanche Current

See Fig.15,16, 23a, 23b A

EAR Repetitive Avalanche Energy mJ Thermal Resistance

Symbol Parameter Typ. Max. Units RJA Junction-to-Ambient ––– 45

°C/W RJA Junction-to-Ambient 12.5 –––

RJA Junction-to-Ambient 20 –––

RJC Junction-to-Case ––– 1.3

RJ-PCB Junction-to-PCB Mounted 0.75 –––

mJ

ID @ TC (top)= 25°C TC (bottom)= 25°C

Continuous Drain Current, VGS @ 10V (double-sided cooling) 330

Static @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 30 ––– mV/°C Reference to 25°C, ID = 1.0mA RDS(on) Static Drain-to-Source On-Resistance ––– 0.95 1.20

m VGS = 10V, ID = 132A

––– 1.60 ––– VGS = 6.0V, ID = 66A VGS(th) Gate Threshold Voltage 2.1 3.0 3.9 V VDS = VGS, ID = 150µA

IDSS Drain-to-Source Leakage Current ––– ––– 1.0

µA VDS = 40V, VGS = 0V

––– ––– 150 VDS = 40V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V

Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Internal Gate Resistance ––– 0.81 –––

nA

TC measured with thermocouple mounted to top (Drain) of part.

Surface mounted on 1 in. square Cu board (still air).

Mounted to a PCB with small clip heatsink (still air)

Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)

IRF7480MTRPbF

3 2016-5-4

D

S

G

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 370 ––– ––– S VDS = 10V, ID = 132A Qg Total Gate Charge ––– 123 185

nC

ID = 132A Qgs Gate-to-Source Charge ––– 31 ––– VDS =20V Qgd Gate-to-Drain ("Miller") Charge ––– 44 ––– VGS = 10V Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 79 ––– ID = 132A, VDS =0V, VGS = 10V td(on) Turn-On Delay Time ––– 21 –––

ns

VDD = 20V tr Rise Time ––– 70 ––– ID = 30A td(off) Turn-Off Delay Time ––– 68 ––– RG = 2.7 tf Fall Time ––– 58 ––– VGS = 10V Ciss Input Capacitance ––– 6680 –––

pF

VGS = 0V Coss Output Capacitance ––– 1035 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 700 ––– ƒ = 1.0MHz Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1240 ––– VGS = 0V, VDS = 0V to 32V Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 1515 ––– VGS = 0V, VDS = 0V to 32V

Diode Characteristics

Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current

––– ––– 87 A

MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current

––– ––– 868 integral reverse

(Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ= 25°C,IS =132A, VGS = 0V

dv/dt Peak Diode Recovery ––– 2.4 ––– V/ns

TJ =150°C,IS =132A, VDS = 40V

trr Reverse Recovery Time ––– 44 ––– ns

TJ = 25° C VR = 34V, ––– 46 ––– TJ = 125°C IF = 132A Qrr Reverse Recovery Charge ––– 56 ––– TJ = 25°C di/dt = 100A/µs ––– 63 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 2.1 ––– A TJ = 25°C

nC

Notes: Repetitive rating; pulse width limited by max. junction temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.009mH, RG = 50, IAS = 132A, VGS =10V. ISD ≤ 132A, di/dt ≤ 920A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note # AN-994. http://www.irf.com/technical-info/appnotes/an-994.pdf

R is measured at TJ approximately 90°C.

Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 20A, VGS =10V.

IRF7480MTRPbF

4 2016-5-4

Fig 6. Normalized On-Resistance vs. Temperature Fig 5. Typical Transfer Characteristics

Fig 4. Typical Output Characteristics Fig 3. Typical Output Characteristics

Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage

1 10 100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C, C

apac

itanc

e (p

F)

VGS = 0V, f = 1 MHZCiss = Cgs + Cgd, Cds SHORTED

Crss = Cgd Coss = Cds + Cgd

CossCrss

Ciss

Fig 7. Typical Capacitance vs. Drain-to-Source Voltage

0 20 40 60 80 100 120 140 160

QG, Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

VG

S, G

ate-

to-S

ourc

e V

olta

ge (

V)

VDS= 32V

VDS= 20V

ID= 132A

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000I D

, Dra

in-t

o-S

our

ce C

urre

nt (

A)

VGSTOP 15V

10V8.0V7.0V6.0V5.5V5.0V

BOTTOM 4.5V

60µs PULSE WIDTHTj = 25°C

4.5V

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

10

100

1000

I D, D

rain

-to-

So

urce

Cur

ren

t (A

)

VGSTOP 15V

10V8.0V7.0V6.0V5.5V5.0V

BOTTOM 4.5V

60µs PULSE WIDTHTj = 150°C

4.5V

2 3 4 5 6 7 8

VGS, Gate-to-Source Voltage (V)

1.0

10

100

1000

I D, D

rain

-to-

Sou

rce

Cur

rent

(A)

TJ = 25°C

TJ = 150°C

VDS = 10V

60µs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.6

0.80.8

1.01.0

1.21.2

1.41.4

1.61.6

1.8

0.6

0.8

1.0

1.2

1.4

1.6

RD

S(o

n) ,

Dra

in-t

o-S

ourc

e O

n R

esis

tanc

e

(

Nor

mal

ized

)

ID = 132A

VGS = 10V

IRF7480MTRPbF

5 2016-5-4

Fig 10. Maximum Safe Operating Area

Fig 11. Drain-to-Source Breakdown Voltage

Fig 9. Typical Source-Drain Diode Forward Voltage

-5 0 5 10 15 20 25 30 35 40

VDS, Drain-to-Source Voltage (V)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

Ene

rgy

(µJ)

Fig 12. Typical Coss Stored Energy

Fig 13. Typical On-Resistance vs. Drain Current

0 20 40 60 80 100 120 140 160 180 200

ID, Drain Current (A)

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

RD

S(o

n),

Dra

in-t

o -S

ourc

e O

n R

esis

tanc

e ( m

)

Vgs = 5.5VVgs = 6.0VVgs = 7.0VVgs = 8.0VVgs = 10V

0.2 0.4 0.6 0.8 1.0

VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

1000I S

D, R

ever

se D

rain

Cur

rent

(A

)

TJ = 25°C

TJ = 150°C

VGS = 0V

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Temperature ( °C )

40

41

42

43

44

45

46

47

48

V(B

R)D

SS

, D

rain

-to-

Sou

rce

Bre

akdo

wn

Vol

tage

(V

)

Id = 1.0mA

0.1 1 10

VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

1000

I D,

Dra

in-t

o-S

ourc

e C

urre

nt (

A)

Tc = 25°CTj = 150°CSingle Pulse

10msec

1msec

OPERATION IN THIS AREA LIMITED BY R

DS(on)

100µsec

DC

IRF7480MTRPbF

6 2016-5-4

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 16. Maximum Avalanche Energy vs. Temperature

Fig 15. Avalanche Current vs. Pulse Width

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax

(assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

10

The

rmal

Res

pons

e (

Z th

JC )

°C

/W

0.20

0.10

D = 0.50

0.020.01

0.05

SINGLE PULSE( THERMAL RESPONSE )

Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

0.1

1

10

100

1000

Ava

lanc

he C

urre

nt (

A)

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C.

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart =25°C (Single Pulse)

25 50 75 100 125 150

Starting TJ , Junction Temperature (°C)

0

20

40

60

80

100

EA

R ,

Ava

lanc

he E

nerg

y (m

J)

TOP Single Pulse BOTTOM 1.0% Duty CycleID = 132A

IRF7480MTRPbF

7 2016-5-4

Fig 17. Threshold Voltage vs. Temperature

Fig 21. Typical Stored Charge vs. dif/dt

Fig 18. Typical Recovery Current vs. dif/dt

100 200 300 400 500 600 700

diF /dt (A/µs)

2

3

4

5

6

7

8

9

I RR

M (

A)

IF = 88A

VR = 34V

TJ = 25°C

TJ = 125°C

100 200 300 400 500 600 700

diF /dt (A/µs)

2

3

4

5

6

7

8

9

I RR

M (

A)

IF = 132A

VR = 34V

TJ = 25°C

TJ = 125°C

100 200 300 400 500 600 700

diF /dt (A/µs)

80

100

120

140

160

180

200

QR

R (

nC)

IF = 88A

VR = 34V

TJ = 25°C

TJ = 125°C

100 200 300 400 500 600 700

diF /dt (A/µs)

40

80

120

160

200

QR

R (

nC)

IF = 132A

VR = 34V

TJ = 25°C

TJ = 125°C

Fig 20. Typical Stored Charge vs. dif/dt Fig 19. Typical Recovery Current vs. dif/dt

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

1.5

2.0

2.5

3.0

3.5

4.0V

GS

(th)

, G

ate

thre

shol

d V

olta

ge (

V)

ID = 150µA

ID = 250µA

ID = 1.0mA

ID = 1.0A

IRF7480MTRPbF

8 2016-5-4

Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs

Fig 23a. Unclamped Inductive Test Circuit

RG

IAS

0.01tp

D.U.T

LVDS

+- VDD

DRIVER

A

15V

20V

Fig 25a. Gate Charge Test Circuit

tp

V(BR)DSS

IAS

Fig 23b. Unclamped Inductive Waveforms

Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2 Qgd Qgodr

Fig 25b. Gate Charge Waveform

VDD

IRF7480MTRPbF

9 2016-5-4

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

DirectFET® Board Footprint, ME Outline (Medium Size Can, E-Designation) Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET®. This includes all recommendations for stencil and substrate designs.

G = GATED = DRAINS = SOURCE

G

DS

D D

DS

SS

S

IRF7480MTRPbF

10 2016-5-4

DirectFET® Outline Dimension, ME Outline (Medium Size Can, E-Designation) Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET®. This includes all recommendations for stencil and substrate designs.

DirectFET® Part Marking

Dimensions are shown inmillimeters (inches)

CODE

A

B

C

D

E

F

G

H

J

L

0.017

0.083

0.156

0.044

0.018

0.024

MAX

0.250

0.38

2.08

3.85

1.08

0.35

0.58

MIN

6.25

4.80

0.42

2.12

3.95

1.12

0.45

0.62

MAX

6.35

5.05

0.015

0.082

0.152

0.043

0.023

0.014

MIN

0.189

0.246

METRIC IMPERIALDIMENSIONS

0.93 0.97

1.28 1.32

0.0380.037

0.0520.050

J1 0.0230.620.58 0.024

0.0350.920.88 0.036K

0.199

L1 0.1443.63 3.67 0.143

M

P

0.028

0.007

0.59

0.08

0.70

0.17

0.023

0.003

N 0.02 0.08 0.0008 0.003

PART NUMBER

BATCH NUMBER

DATE CODELine above the last character ofthe date code indicates "Lead-Free"

GATE MARKING

LOGO

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

IRF7480MTRPbF

11 2016-5-4

DirectFET® Tape & Reel Dimension (Showing component orientation).

NOTE: Controlling dimensions in mmStd reel quantity is 4800 parts. (ordered as IRF7480MTRPBF). For 1000 parts on 7"reel, order IRF7480MTR1PBF

REEL DIMENSIONS

MAX

N.C

N.C

0.520

N.C

N.C

0.724

0.567

0.606

IMPERIAL

MIN

330.0

20.2

12.8

1.5

100.0

N.C

12.4

11.9

STANDARD OPTION (QTY 4800)

CODE

A

B

C

D

E

F

G

H

MAX

N.C

N.C

13.2

N.C

N.C

18.4

14.4

15.4

MIN

12.992

0.795

0.504

0.059

3.937

N.C

0.488

0.469

METRIC

MIN

6.9

0.75

0.53

0.059

2.31

N.C

0.47

0.47

TR1 OPTION (QTY 1000)

MAX

N.C

N.C

12.8

N.C

N.C

13.50

12.01

12.01

MIN

177.77

19.06

13.5

1.5

58.72

N.C

11.9

11.9

METRIC

MAX

N.C

N.C

0.50

N.C

N.C

0.53

N.C

N.C

IMPERIAL

LOADED TAPE FEED DIRECTION

NOTE: CONTROLLINGDIMENSIONS IN MM

CODE

A

B

C

D

E

F

G

H

IMPERIAL

MIN

0.311

0.154

0.469

0.215

0.201

0.256

0.059

0.059

MAX

8.10

4.10

12.30

5.55

5.30

6.70

N.C

1.60

MIN

7.90

3.90

11.90

5.45

5.10

6.50

1.50

1.50

METRIC

DIMENSIONS

MAX

0.319

0.161

0.484

0.219

0.209

0.264

N.C

0.063

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

IRF7480MTRPbF

12 2016-5-4

Qualification Information†

Qualification Level Industrial *

(per JEDEC JESD47F†† guidelines)

Moisture Sensitivity Level DFET 1.5 MSL1

(per JEDEC J-STD-020D††)

RoHS Compliant Yes

† Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release. * Industrial qualification standards except autoclave test conditions.

Revision History

Date Comments

11/07/2014 Updated EAS (L =1mH) = 206mJ on page 2 Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 20A, VGS =10V” on page 3 Updated RJA from “60°C/W” to “45°C/W” on page 2.

05/14/2015 Updated registered trademark from DirectFETTM to DirectFET® on page 1,9 and 10.

05/04/2016 Updated datasheet with corporate template. Added ID (double- sided cooling) = 300A on pages1 and 2.

Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.

IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.