Datasheet IPP60R022S7 - Infineon Technologies

1

IPP60R022S7

Rev.2.1,2021-10-25Final Data Sheet

tabPG-TO220

Drain

Pin 2, Tab

Gate

Pin 1

Source

Pin 3

*1

*1: Internal body diode

MOSFET600VCoolMOSªSJS7PowerDeviceIPP60R022S7enablesthebestpriceperformanceforlowfrequencyswitchingapplications.CoolMOS™S7boaststhelowestRdsonvaluesforaHVSJMOSFET,withdistinctiveincreaseofenergyefficiency.

CoolMOS™S7isoptimizedfor“staticswitching”andhighcurrentapplications.ItisanidealfitforsolidstaterelayandcircuitbreakerdesignsaswellasforlinerectificationinSMPSandinvertertopologies.

Features•CoolMOS™S7technologyenables22mΩRDS(on)inthesmallestfootprint•Optimizedpriceperformanceinlowfrequencyswitchingapplications•Highpulsecurrentcapability•TO220packagewithtotalPb-freedieattach

Benefits•Minimizedconductionlosses(eliminate/reduceheatsink)•Increasedsystemperformance•Morecompactandeasierdesign•LowerBOMor/andTCOoverprolongedlifetime

Comparedtoelectromechanicaldevices:•Fasterswitchingtimes•Morereliabilityandlongersystemlifetime•Shock&Vibrationresistance•Nocontactarcing,bouncingordegradationoverlifetime

Potentialapplications•Solidstaterelaysandcircuitbreakers•Linerectificationinhighpower/performanceapplicationse.g.Computing,Telecom,UPSandSolar

ProductvalidationFullyqualifiedaccordingtoJEDECforIndustrialApplications

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParametersParameter Value UnitRDS(on),max 22 mΩ

Qg,typ 150 nC

VSD 0.83 V

Pulsed ISD, IDS 375 A

Type/OrderingCode Package Marking RelatedLinksIPP60R022S7 PG-TO220-3 60R022S7 see Appendix A

2

600VCoolMOSªSJS7PowerDeviceIPP60R022S7


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

3



1MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Drain current rating ID - - 23 A

TC=140°CCurrent is limited by Tj max = 150°C;Lower case temp does increasecurrent capability

Pulsed drain current1) ID,pulse - - 375 A TC=25°C

Avalanche energy, single pulse EAS - - 289 mJ ID=3.8A; VDD=50V; see table 10

Avalanche current, single pulse IAS - - 3.8 A -

MOSFET dv/dt ruggedness2) dv/dt - - 20 V/ns VDS=0Vto300VGate source voltage (static) VGS -20 - 20 V static

Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)

Power dissipation Ptot - - 390 W TC=25°CStorage temperature Tstg -55 - 150 °C -

Operating junction temperature Tj -55 - 150 °C -

Mounting torque - - - 60 Ncm M3 and M3.5 screws

Diode forward current rating IS - - 23 A

TC=140°CCurrent is limited by Tj max = 150°C;Lower case temp does increasecurrent capability

Diode pulse current1) IS,pulse - - 375 A TC=25°C

Reverse diode dv/dt3) dv/dt - - 5 V/ns VDS=0to300V,ISD<=23A,Tj=25°C see table 8

Maximum diode commutation speed dif/dt - - 820 A/µs VDS=0to300V,ISD<=23A,Tj=25°C see table 8

Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min

1) Pulse width tp limited by Tj,max2) The dv/dt has to be limited by appropriate gate resistor3) Identical low side and high side switch

4



2Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction - case RthJC - - 0.32 °C/W -

Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded

Thermal resistance, junction - ambientfor SMD version RthJA - - - °C/W n.a.

Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s

5



3ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified

Table4StaticcharacteristicsFor applications with applied blocking voltage >70% of the specified blocking voltage, it is required that the customer evaluates the impact of cosmic radiation effect in early design phase and contacts the Infineon sales office for the necessary technical support by Infineon

ValuesMin. Typ. Max.

Parameter Symbol Unit Note/TestCondition

Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mAGate threshold voltage V(GS)th 3.5 4.0 4.5 V VDS=VGS,ID=1.44mA

Zero gate voltage drain current IDSS --

-50

5- µA VDS=600V,VGS=0V,Tj=25°C

VDS=600V,VGS=0V,Tj=150°C

Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

0.020.047

0.022- Ω VGS=12V,ID=23A,Tj=25°C

VGS=12V,ID=23A,Tj=150°C

Gate resistance RG - 0.80 - Ω f=1MHz,opendrain

Table5DynamiccharacteristicsValues


Input capacitance Ciss - 5639 - pF VGS=0V,VDS=300V,f=250kHzOutput capacitance Coss - 89 - pF VGS=0V,VDS=300V,f=250kHz

Effective output capacitance, energyrelated1) Co(er) - 303 - pF VGS=0V,VDS=0to300V

Effective output capacitance, timerelated2) Co(tr) - 2678 - pF ID=constant,VGS=0V,VDS=0to300V

Output charge Qoss - 803 - nC VGS=0V,VDS=0to300V

Turn-on delay time td(on) - 30 - ns VDD=300V,VGS=13V,ID=23A,RG=5.3Ω;seetable9

Rise time tr - 9 - ns VDD=300V,VGS=13V,ID=23A,RG=5.3Ω;seetable9

Turn-off delay time td(off) - 150 - ns VDD=300V,VGS=13V,ID=23A,RG=5.3Ω;seetable9

Fall time tf - 9 - ns VDD=300V,VGS=13V,ID=23A,RG=5.3Ω;seetable9

Table6GatechargecharacteristicsValues


Gate to source charge Qgs - 31 - nC VDD=300V,ID=23A,VGS=0to12VGate to drain charge Qgd - 50 - nC VDD=300V,ID=23A,VGS=0to12VGate charge total Qg - 150 - nC VDD=300V,ID=23A,VGS=0to12VGate plateau voltage Vplateau - 5.4 - V VDD=300V,ID=23A,VGS=0to12V

1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to300V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to300V

6



Table7ReversediodecharacteristicsValues


Diode forward voltage VSD - 0.83 - V VGS=0V,IF=23A,Tj=25°C

Reverse recovery time trr - 460 - ns VR=300V,IF=23A,diF/dt=100A/µs;see table 8

Reverse recovery charge Qrr - 9 - µC VR=300V,IF=23A,diF/dt=100A/µs;see table 8

Peak reverse recovery current Irrm - 40 - A VR=300V,IF=23A,diF/dt=100A/µs;see table 8

7



4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

50

100

150

200

250

300

350

400

Ptot=f(TC)

Diagram2:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-3

10-2

10-1

100

101

102

103

1 µs10 µs100 µs1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-3

10-2

10-1

100

101

102

103

1 µs10 µs

100 µs

1 ms

DC10 ms

ID=f(VDS);TC=80°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-110-2

10-1

100

0.5

0.2

0.1

0.05

0.020.01

single pulse

ZthJC=f(tP);parameter:D=tp/T

8



Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 4 8 12 16 200

100

200

300

400

500

600

20 V12 V

10 V

8 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 4 8 12 16 200

50

100

150

200

250

300

350

20 V

12 V

10 V 8 V

ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance

ID[A]

RDS(on

) [Ω]

0 50 100 150 200 250 3000.035

0.040

0.045

0.050

0.055

0.060

12 V

10 V8 V

20 V

RDS(on)=f(ID);Tj=125°C;parameter:VGS

Diagram8:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [no

rmalized]

-50 -25 0 25 50 75 100 125 1500.5

0.8

1.1

1.4

1.7

2.0

2.3

RDS(on)=f(Tj);ID=23.0A;VGS=12V

9



Diagram9:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 10 120

100

200

300

400

500

600

150 °C

25 °C

ID=f(VGS);VDS=20V;parameter:Tj

Diagram10:Typ.gatecharge

Qgate[nC]

VGS [V]

0 40 80 120 1600

2

4

6

8

10

12

120 V

300 V

VGS=f(Qgate);ID=23.0Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.410-1

100

101

102

103

125 °C

25 °C

IF=f(VSD);VGS=0V;parameter:Tj

Diagram12:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.410-1

100

101

102

103

25 °C 125 °C

IF=f(VSD);VGS=12V;parameter:Tj

10



Diagram13:Avalancheenergy

Tj[°C]

EAS [mJ]

25 50 75 100 125 1500

50

100

150

200

250

300

EAS=f(Tj);ID=3.8A;VDD=50V

Diagram14:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-50 -25 0 25 50 75 100 125 150540

560

580

600

620

640

660

680

VBR(DSS)=f(Tj);ID=1mA

Diagram15:Typ.capacitances

VDS[V]

C[p

F]

0 50 100 150 200 250 300101

102

103

104

105

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=250kHz

Diagram17:Typ.Qossoutputcharge

VDS[V]

Qoss [nC

]

0 50 100 150 200 250 3000

100

200

300

400

500

600

700

800

900

Qoss=f(VDS);VGS=0V

11



5TestCircuits

Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDS

VGS

Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform

VDS

V(BR)DS

IDVDS

VDSID

12



6PackageOutlines

Figure1OutlinePG-TO220-3,dimensionsinmm/inches

13



7AppendixA

Table11RelatedLinks

• IFXCoolMOSS7Webpage:www.infineon.com

• IFXCoolMOSS7applicationnote:www.infineon.com

• IFXCoolMOSS7simulationmodel:www.infineon.com

• IFXDesigntools:www.infineon.com

http://www.infineon.com/tools

http://www.infineon.com/S7_600V



14



RevisionHistoryIPP60R022S7

Revision:2021-10-25,Rev.2.1

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2019-05-07 Release of final version

2.1 2021-10-25 Change of wording regarding breakdown voltage / cosmic ray

TrademarksAllreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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PublishedbyInfineonTechnologiesAG81726München,Germany©2021InfineonTechnologiesAGAllRightsReserved.

LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics(“Beschaffenheitsgarantie”).

Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthisdocumentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseoftheproductofInfineonTechnologiesincustomer’sapplications.Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication.

InformationForfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesOffice(www.infineon.com).

WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

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Datasheet IPP60R022S7 - Infineon Technologies