Datasheet IKW50N65EH5 - Infineon Technologies

Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.2www.infineon.com 2017-07-27

IKW50N65EH5

Highspeedseriesfifthgeneration

Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithfull-ratedRAPID1fastandsoftantiparalleldiodeFeaturesandBenefits:

HighspeedH5technologyoffering•Best-in-Classefficiencyinhardswitchingandresonanttopologies•PlugandplayreplacementofpreviousgenerationIGBTs•650Vbreakdownvoltage•LowgatechargeQG•IGBTcopackedwithfull-ratedRAPID1fastandsoftantiparalleldiode•Maximumjunctiontemperature175°C•QualifiedaccordingtoJEDECfortargetapplications•Pb-freeleadplating;RoHScompliant•CompleteproductspectrumandPSpiceModels:http://www.infineon.com/igbt/

Applications:

•Uninterruptiblepowersupplies•Solarconverters•Weldingconverters•Midtohighrangeswitchingfrequencyconverters

Packagepindefinition:

•Pin1-gate•Pin2&backside-collector•Pin3-emitter

G

C

E

12

3

KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageIKW50N65EH5 650V 50A 1.65V 175°C K50EEH5 PG-TO247-3

Datasheet 2 V2.22017-07-27

IKW50N65EH5


TableofContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Datasheet 3 V2.22017-07-27

IKW50N65EH5


MaximumRatingsForoptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value UnitCollector-emittervoltage,Tvj≥25°C VCE 650 V

DCcollectorcurrent,limitedbyTvjmaxTC=25°CvaluelimitedbybondwireTC=100°C

IC 80.050.0

A

Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 200.0 A

Turn off safe operating areaVCE≤650V,Tvj≤175°C,tp=1µs1) - 200.0 A

Diodeforwardcurrent,limitedbyTvjmaxTC=25°CvaluelimitedbybondwireTC=100°C

IF 80.050.0

A

Diodepulsedcurrent,tplimitedbyTvjmax1) IFpuls 200.0 A

Gate-emitter voltageTransientGate-emittervoltage(tp≤10µs,D<0.010) VGE

±20±30 V

PowerdissipationTC=25°CPowerdissipationTC=100°C Ptot

275.0138.0 W

Operating junction temperature Tvj -40...+175 °C

Storage temperature Tstg -55...+150 °C

Soldering temperature,wave soldering 1.6mm (0.063in.) from case for 10s 260 °C

Mounting torque, M3 screw, PG-TO247-pin123Maximum of mounting processes: 3 M 0.6 Nm

ThermalResistance

Valuemin. typ. max.

Parameter Symbol Conditions Unit

RthCharacteristics

IGBT thermal resistance,junction - case Rth(j-C) - - 0.55 K/W

Diode thermal resistance,junction - case Rth(j-C) - - 0.63 K/W

Thermal resistancejunction - ambient Rth(j-a) - - 40 K/W

1) Defined by design. Not subject to production test.

Datasheet 4 V2.22017-07-27

IKW50N65EH5


ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.


StaticCharacteristic

Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V

Collector-emitter saturation voltage VCEsat

VGE=15.0V,IC=50.0ATvj=25°CTvj=125°CTvj=175°C

---

1.651.851.95

2.10--

V

Diode forward voltage VF

VGE=0V,IF=50.0ATvj=25°CTvj=125°CTvj=175°C

---

1.351.331.30

1.70--

V

Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 3.2 4.0 4.8 V

Zero gate voltage collector current ICESVCE=650V,VGE=0VTvj=25°CTvj=175°C

--

12000

50-

µA

Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA

Transconductance gfs VCE=20V,IC=50.0A - 62.0 - S

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.


DynamicCharacteristic

Input capacitance Cies - 3000 -

Output capacitance Coes - 90 -

Reverse transfer capacitance Cres - 12 -

VCE=25V,VGE=0V,f=1MHz pF

Gate charge QGVCC=520V,IC=50.0A,VGE=15V - 120.0 - nC

Internal emitter inductancemeasured 5mm (0.197 in.) fromcase

LE - 13.0 - nH

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=25°CTurn-on delay time td(on) - 25 - ns

Rise time tr - 29 - ns

Turn-off delay time td(off) - 172 - ns

Fall time tf - 35 - ns

Turn-on energy Eon - 1.50 - mJ

Turn-off energy Eoff - 0.50 - mJ

Total switching energy Ets - 2.00 - mJ

Tvj=25°C,VCC=400V,IC=50.0A,VGE=0.0/15.0V,RG(on)=12.0Ω,RG(off)=12.0Ω,Lσ=30nH,Cσ=25pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.

Datasheet 5 V2.22017-07-27

IKW50N65EH5


Turn-on delay time td(on) - 24 - ns








DiodeCharacteristic,atTvj=25°C

Diode reverse recovery time trr - 81 - ns

Diode reverse recovery charge Qrr - 1.10 - µC

Diode peak reverse recovery current Irrm - 17.0 - A

Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -1000 - A/µs

Tvj=25°C,VR=400V,IF=50.0A,diF/dt=1000A/µs,Lσ=30nH,Cσ=25pF






SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=150°CTurn-on delay time td(on) - 24 - ns








Turn-on delay time td(on) - 23 - ns








Datasheet 6 V2.22017-07-27

IKW50N65EH5


DiodeCharacteristic,atTvj=150°C











Datasheet 7 V2.22017-07-27

IKW50N65EH5


Figure 1. Forwardbiassafeoperatingarea(D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs,ICmaxdefinedbydesign-notsubjecttoproduction test)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

IC,C

OLLEC

TORCURREN

T[A]

1 10 100 10000.1

1

10

100

not for linear use

Figure 2. Powerdissipationasafunctionofcasetemperature(Tvj≤175°C)

TC,CASETEMPERATURE[°C]

Ptot ,PO

WER

DISSIPA

TION[W

]

25 50 75 100 125 150 1750

50

100

150

200

250

300

Figure 3. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tvj≤175°C)

TC,CASETEMPERATURE[°C]

IC,C

OLLEC

TORCURREN

T[A]

25 50 75 100 125 150 1750

10

20

30

40

50

60

70

80

90

Figure 4. Typicaloutputcharacteristic(Tvj=25°C)


IC,C

OLLEC

TORCURREN

T[A]

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00

15

30

45

60

75

90

105

120

135

150VGE = 20V

18V

15V

12V

10V

8V

7V

6V

5V

Datasheet 8 V2.22017-07-27

IKW50N65EH5


Figure 5. Typicaloutputcharacteristic(Tvj=150°C)


IC,C

OLLEC

TORCURREN

T[A]

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00

15

30

45

60

75

90

105

120

135

150VGE = 20V

18V

15V

12V

10V

8V

7V

6V

5V

Figure 6. Typicaltransfercharacteristic(VCE=20V)

VGE,GATE-EMITTERVOLTAGE[V]

IC,C

OLLEC

TORCURREN

T[A]

2 3 4 5 6 7 8 90

15

30

45

60

75

90

105

120

135

150Tvj = 25°CTvj = 150°C

Figure 7. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)

Tvj,JUNCTIONTEMPERATURE[°C]

VCEsat,C

OLLEC

TOR-EMITTE

RSAT

URAT

ION[V

]

25 50 75 100 125 150 1750.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0IC = 25AIC = 50AIC = 100A

Figure 8. Typicalswitchingtimesasafunctionofcollectorcurrent(inductiveload,Tvj=150°C,VCE=400V,VGE=0/15V,RG(on)=12Ω,RG(off)=12Ω,dynamictest circuit in Figure E)

IC,COLLECTORCURRENT[A]

t,SW

ITCHINGTIMES

[ns]

0 25 50 75 100 125 1501

10

100

1000td(off)

tftd(on)

tr

Datasheet 9 V2.22017-07-27

IKW50N65EH5


Figure 9. Typicalswitchingtimesasafunctionofgateresistance(inductiveload,Tvj=150°C,VCE=400V,VGE=0/15V,IC=50A,dynamictestcircuitinFigure E)

RG,GATERESISTANCE[Ω]

t,SW

ITCHINGTIMES

[ns]

5 15 25 35 45 55 65 75 8510

100

1000td(off)

tftd(on)

tr

Figure 10. Typicalswitchingtimesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=0/15V,IC=50A,RG(on)=12Ω,RG(off)=12Ω,dynamictest circuit in Figure E)


t,SW

ITCHINGTIMES

[ns]

25 50 75 100 125 150 1751

10

100

1000td(off)

tftd(on)

tr

Figure 11. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=0.5mA)


VGE(th) ,GAT

E-EM

ITTE

RTHRES

HOLD

VOLTAG

E[V]

25 50 75 100 125 1501.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0typ.min.max.

Figure 12. Typicalswitchingenergylossesasafunctionofcollectorcurrent(inductiveload,Tvj=150°C,VCE=400V,VGE=0/15V,RG(on)=12Ω,RG(off)=12Ω,dynamic test circuit in Figure E)

IC,COLLECTORCURRENT[A]

E,S

WITCHINGENER

GYLO

SSES

[mJ]

0 25 50 75 100 125 1500

1

2

3

4

5

6

7

8

9

10

11

12Eoff

Eon

Ets

Datasheet 10 V2.22017-07-27

IKW50N65EH5


Figure 13. Typicalswitchingenergylossesasafunctionofgateresistance(inductiveload,Tvj=150°C,VCE=400V,VGE=0/15V,IC=50A,dynamictestcircuitinFigure E)

RG,GATERESISTANCE[Ω]

E,S

WITCHINGENER

GYLO

SSES

[mJ]

5 15 25 35 45 55 65 75 850

1

2

3

4

5

6

7Eoff

Eon

Ets

Figure 14. Typicalswitchingenergylossesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=0/15V,IC=50A,RG(on)=12Ω,RG(off)=12Ω,dynamictest circuit in Figure E)


E,S

WITCHINGENER

GYLO

SSES

[mJ]

25 50 75 100 125 150 1750.0

0.5

1.0

1.5

2.0

2.5

3.0Eoff

Eon

Ets

Figure 15. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(inductiveload,Tvj=150°C,VGE=0/15V,IC=50A,RG(on)=12Ω,RG(off)=12Ω,dynamictest circuit in Figure E)


E,S

WITCHINGENER

GYLO

SSES

[mJ]

200 250 300 350 400 450 5000.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5Eoff

Eon

Ets

Figure 16. Typicalgatecharge(IC=50A)

QG,GATECHARGE[nC]

VGE ,GAT

E-EM

ITTE

RVOLTAG

E[V]

0 20 40 60 80 100 1200

2

4

6

8

10

12

14

16VCE = 130VVCE = 520V

Datasheet 11 V2.22017-07-27

IKW50N65EH5


Figure 17. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)


C,C

APAC

ITAN

CE[pF]

0 5 10 15 20 25 301

10

100

1000

1E+4

Cies

Coes

Cres

Figure 18. IGBTtransientthermalimpedance(D=tp/T)

tp,PULSEWIDTH[s]

Zth(j -c

) ,TR

ANSIEN

TTH

ERMAL

IMPE

DAN

CE[K/W

]

1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.10.001

0.01

0.1

D = 0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

19.5E-32.5E-5

20.1250392.3E-4

30.1328572.1E-3

40.2566540.012197

50.0215510.104256

62.1E-31.840158

Figure 19. Diodetransientthermalimpedanceasafunctionofpulsewidth(D=tp/T)

tp,PULSEWIDTH[s]

Zth(j -c

) ,TR

ANSIEN

TTH

ERMAL

IMPE

DAN

CE[K/W

]

1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.10.001

0.01

0.1

D = 0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.0134312.6E-5

20.1463252.1E-4

30.1590152.0E-3

40.2785060.01147

50.0255380.091987

62.1E-31.834403

Figure 20. Typicalreverserecoverytimeasafunctionofdiodecurrentslope(VR=400V)

diF/dt,DIODECURRENTSLOPE[A/µs]

trr,R

EVER

SEREC

OVE

RYTIME[ns]

500 700 900 1100 1300 15000

20

40

60

80

100

120

140

160

180Tvj = 25°C, IF = 50ATvj = 150°C, IF = 50A

Datasheet 12 V2.22017-07-27

IKW50N65EH5


Figure 21. Typicalreverserecoverychargeasafunctionofdiodecurrentslope(VR=400V)


Qrr ,REV

ERSE

REC

OVE

RYCHAR

GE[µC]

500 700 900 1100 1300 15000.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5Tvj = 25°C, IF = 50ATvj = 150°C, IF = 50A

Figure 22. Typicalreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V)


Irr,R

EVER

SEREC

OVE

RYCURREN

T[A]

500 700 900 1100 1300 15000

10

20

30

40

50

60

70Tvj = 25°C, IF = 50ATvj = 150°C, IF = 50A

Figure 23. Typicaldiodepeakrateoffallofreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V)


dIrr /dt,D

IODEPE

AKRAT

EOFFA

LLOFIrr[A

/µs]

500 700 900 1100 1300 1500-13000

-12000

-11000

-10000

-9000

-8000

-7000

-6000

-5000

-4000

-3000

-2000

-1000

0

Tvj = 25°C, IF = 50ATvj = 150°C, IF = 50A

Figure 24. Typicaldiodeforwardcurrentasafunctionofforwardvoltage

VF,FORWARDVOLTAGE[V]

IF ,FORWAR

DCURREN

T[A]

0.0 0.5 1.0 1.5 2.0 2.5 3.00

15

30

45

60

75

90

105

120

135

150Tvj = 25°CTvj = 150°C

Datasheet 13 V2.22017-07-27

IKW50N65EH5


Figure 25. Typicaldiodeforwardvoltageasafunctionofjunctiontemperature


VF ,FO

RWAR

DVOLTAG

E[V]

25 50 75 100 125 150 1750.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

IF = 25AIF = 50AIF = 100A

Datasheet 14 V2.22017-07-27

IKW50N65EH5


Package Drawing PG-TO247-3

Datasheet 15 V2.22017-07-27

IKW50N65EH5


t

a b

td(off)

tf t

rtd(on)

90% IC

10% IC

90% IC

10% VGE

10% IC

t

90% VGE

t

t

90% VGE

VGE

(t)

t

t

tt1 t

4

2% IC

10% VGE

2% VCE

t2

t3

E

t

t

V I toff

= x x d

1

2

CE CE

t

t

V I ton

= x x d

3

4

CE C

CC

dI /dtF

dI

I,V

Figure A.

Figure B.

Figure C. Definition of diode switchingcharacteristics

Figure E. Dynamic test circuit

Figure D.

I (t)C

Parasitic inductance L ,

parasitic capacitor C ,

relief capacitor C ,

(only for ZVT switching)

s

s

r

t t t

Q Q Qrr a b

rr a b

= +

= +

Qa Qb

V (t)CE

VGE

(t)

I (t)C

V (t)CE

Testing Conditions

Datasheet 16 V2.22017-07-27

IKW50N65EH5


RevisionHistory

IKW50N65EH5

Revision:2017-07-27,Rev.2.2Previous Revision

Revision Date Subjects (major changes since last revision)

2.1 2015-05-20 Final data sheet

2.2 2017-07-27 Correction Fig.1

Trademarks

Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

PublishedbyInfineonTechnologiesAG81726München,Germany©InfineonTechnologiesAG2017.AllRightsReserved.

ImportantNoticeTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthisdocumentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseoftheproductofInfineonTechnologiesincustomer’sapplications.

Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication.

Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesoffice(www.infineon.com).

PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotiveElectronicsCouncil.

WarningsDuetotechnicalrequirementsproductsmaycontaindangeroussubstances.ForinformationonthetypesinquestionpleasecontactyournearestInfineonTechnologiesoffice.

ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorizedrepresentativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswhereafailureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.

Documents

Datasheet IKW50N65EH5 - Infineon Technologies