IRF200P222 Product Datasheet - Infineon Technologies

D

S

G

G D S Gate Drain Source

Applications UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits

Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dv/dt and di/dt Capability Lead-Free; RoHS Compliant; Halogen-Free

Base part number Package Type Standard Pack Form Quantity

IRF200P222 TO-247AC Tube 25 IRF200P222

Orderable Part Number

VDSS 200V

RDS(on) typ. 5.3m max 6.6m

ID 182A

TO-247AC IRF200P222

Final Datasheet Please read the important Notice and Warnings at the end of this document V2.1 www.infineon.com 2020-01-07

IRF200P222

MOSFET StrongIRFET™

Figure 1 Typical On-Resistance vs. Gate Voltage Figure 2 Maximum Drain Current vs. Case Temperature

2 4 6 8 10 12 14 16 18 20

VGS, Gate -to -Source Voltage (V)

2

4

6

8

10

12

14

16

18

20

R DS(o

n),

Drai

n-to

-Sou

rce

On

Resi

stan

ce (m

)

ID = 82A

TJ = 25°C

TJ = 125°C

25 50 75 100 125 150 175

TC , Case Temperature (°C)

0

20

40

60

80

100

120

140

160

180

200

I D, Dr

ain

Curr

ent (

A)

http://www.infineon.com/�

Final Datasheet 2 V2.1 2020-01-07

StrongIRFET™

IRF200P222 Table of Contents

Table of Contents Applications …..………………………………………………………………………...……………..……………1

Benefits …..………………………………………………………………………...……………..…………….1

Ordering Table ….……………………………………………………………………………………………………1

Table of Contents ….………………………………………………………………………………………………...2

1 Parameters ………………………………………………………………………………………………3

2 Maximum ratings, Thermal, and Avalanche characteristics ………………………………………4

3 Electrical characteristics ………………………………………………………………………………5

4 Electrical characteristic diagrams ……………………………………………………………………6

Package Information ………………………………………………………………………………………………14

Qualification Information ……………………………………………………………………………………………15

Revision History …………………………………………………………………………………………..…………16


StrongIRFET™

IRF200P222

1 Parameters

Table1 Key performance parameters

Parameter Values Units

VDS 200 V

RDS(on) max 6.6 m

ID 182 A

Parameters


StrongIRFET™

IRF200P222

Table 2 Maximum ratings (at TJ=25°C, unless otherwise specified) Parameter Symbol Values Unit Continuous Drain Current ID 182

A Continuous Drain Current ID 129 Pulsed Drain Current IDM 728 Maximum Power Dissipation PD 556 W Linear Derating Factor 3.7 W/°C Gate-to-Source Voltage VGS ± 20 V Operating Junction and Storage Temperature Range

TJ TSTG

-55 to + 175 °C Soldering Temperature, for 10 seconds

(1.6mm from case) - 300

Mounting Torque, 6-32 or M3 Screw - 10 lbf·in (1.1 N·m) -

Conditions TC = 25°C, VGS @ 10V

TC = 100°C, VGS @ 10V TC = 25°C TC = 25°C TC = 25°C

-

-

-

-

Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.24mH, RG = 50, IAS = 82A, VGS =10V. ISD 82A, di/dt 2290A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 46A, VGS =10V.

Table 4 Avalanche characteristics Parameter Symbol Values Unit

Single Pulse Avalanche Energy EAS (Thermally limited) 810

Single Pulse Avalanche Energy EAS (Thermally limited) 1070

Avalanche Current IAR

See Fig 16, 17, 23a, 23b A

Repetitive Avalanche Energy EAR mJ

mJ

Table 3 Thermal characteristics Parameter Symbol Conditions Typ. Max. Unit Junction-to-Case RJC TJ approximately 90°C - 0.27

°C/W Case-to-Sink, Flat Greased Surface RCS - 0.24 - Junction-to-Ambient RJA - - 40

Min. - - -

2 Maximum ratings and thermal characteristics

Maximum ratings and thermal characteristics


StrongIRFET™

IRF200P222

D

S

G

Table 6 Dynamic characteristics

Parameter Symbol Conditions Values Unit Min. Typ. Max. Forward Trans conductance gfs VDS = 50V, ID = 82A 142 - - S Total Gate Charge Qg - 135 203

nC Gate-to-Source Charge Qgs - 49 - Gate-to-Drain Charge Qgd - 26 - Total Gate Charge Sync. (Qg– Qgd) Qsync - 109 - Turn-On Delay Time td(on) VDD = 130V - 25 -

ns Rise Time tr ID = 82A - 96 - Turn-Off Delay Time td(off) RG = 2.7 - 77 - Fall Time tf VGS = 10V - 97 - Input Capacitance Ciss VGS = 0V - 9820 -

pF

Output Capacitance Coss VDS = 50V - 1240 - Reverse Transfer Capacitance Crss ƒ = 1.0MHz, See Fig.7 - 6.5 - Effective Output Capacitance (Energy Related) Coss eff.(ER) VGS = 0V, VDS = 0V to 160V - 1025 -

Output Capacitance (Time Related) Coss eff.(TR) VGS = 0V, VDS = 0V to 160V - 1540 -

ID = 82A VDS = 100V VGS = 10V

Table 7 Reverse Diode

Parameter Symbol Conditions Values Unit Min. Typ. Max. Continuous Source Current IS

MOSFET symbol - - 182 A

(Body Diode) showing the Pulsed Source Current integral reverse - - 728 (Body Diode) p-n junction diode. Diode Forward Voltage VSD TJ = 25°C, IS = 82A,VGS = 0V - - 1.2 V Peak Diode Recovery dv/dt dv/dt TJ = 175°C, IS = 82A,VDS = 200V - 12.3 - V/ns

Reverse Recovery Time trr TJ = 25°C - 125 -

ns TJ = 125°C - 180 -

Reverse Recovery Charge Qrr TJ = 25°C - 390 -

nC TJ = 125°C - 820 -

Reverse Recovery Current IRRM TJ = 25°C - 4.8 - A

ISM

VDD = 170V IF = 82A, di/dt = 100A/µs

Table 5 Static characteristics

Parameter Symbol Conditions Values Unit Min. Typ. Max. Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1mA 200 - - V Breakdown Voltage Temp. Coefficient V(BR)DSS/TJ Reference to 25°C, ID = 2mA - 0.1 - V/°C Static Drain-to-Source On-Resistance RDS(on) VGS = 10V, ID = 82A - 5.3 6.6 m Gate Threshold Voltage VGS(th) VDS = VGS, ID = 270µA 2.0 - 4.0 V

Drain-to-Source Leakage Current IDSS VDS = 160V, VGS = 0V - - 1.0

µA VDS = 160V,VGS = 0V,TJ =125°C - - 100 Gate-to-Source Forward Leakage IGSS VGS = 20V - - 100 nA Gate Resistance RG - 1.3 -

3 Electrical characteristics

Electrical characteristics


StrongIRFET™

IRF200P222 Electrical characteristic diagrams

4 Electrical characteristic diagrams

Figure 3 Typical Output Characteristics Figure 4 Typical Output Characteristics

Figure 5 Typical Transfer Characteristics Figure 6 Normalized On-Resistance vs. Temperature

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

I D, D

rain

-to-

Sour

ce C

urre

nt (A

)

VGSTOP 15V

10V7.0V6.0V5.5V5.0V4.5V

BOTTOM 4.0V

60µs PULSE WIDTHTj = 25°C

4.0V

0.1 1 10 100


1

10

100

1000

I D, D

rain

-to-

Sour

ce C

urre

nt (A

)

VGSTOP 15V

10V7.0V6.0V5.5V5.0V4.5V

BOTTOM 4.0V

60µs PULSE WIDTHTj = 175°C

4.0V

2 3 4 5 6 7 8

VGS, Gate-to-Source Voltage (V)

1

10

100

1000

I D, D

rain

-to-

Sour

ce C

urre

nt (A

)

TJ = 25°CTJ = 175°C

VDS = 50V

60µs PULSE WIDTH

-60 -20 20 60 100 140 180

TJ , Junction Temperature (°C)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

R DS(o

n) , D

rain

-to-

Sour

ce O

n Re

sist

ance

(

Nor

mal

ized

)

ID = 82A

VGS = 10V


StrongIRFET™


Figure 7 Typical Capacitance vs. Drain-to-Source Voltage

Figure 8 Typical Gate Charge vs. Gate-to-Source Voltage

1 10 100 1000


1

10

100

1000

10000

100000

1E+006

C, C

apac

itanc

e (p

F)

VGS = 0V, f = 1 MHZCiss = Cgs + Cgd, Cds SHORTEDCrss = Cgd Coss = Cds + Cgd

Coss

Crss

Ciss

0 20 40 60 80 100 120 140 160 180

QG, Total Gate Charge (nC)

0

2

4

6

8

10

12

14

V GS, G

ate-

to-S

ourc

e Vo

ltage

(V) VDS= 160V

VDS= 100V

VDS= 40V

ID = 82A

0.0 0.4 0.8 1.2 1.6 2.0

VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

1000

I SD, R

ever

se D

rain

Cur

rent

(A)

TJ = 25°CTJ = 175°C

VGS = 0V

Figure 9 Typical Source-Drain Diode Forward


StrongIRFET™

IRF200P222

Figure 10 Maximum Safe Operating Area

Figure 11 Drain-to-Source Breakdown Voltage Figure 12 Typical Coss Stored Energy

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Temperature ( °C )

195

205

215

225

235

V (BR)

DSS, Dr

ain-

to-S

ourc

e Br

eakd

own

Volta

ge (V

)

Id = 2.0mA

0 20 40 60 80 100 120 140 160 180 200 220


0

2

4

6

8

10

12

14

16

18

20

Ener

gy (µ

J)

0.1 1 10 100


0.01

0.1

1

10

100

1000

I D,

Drai

n-to

-Sou

rce

Curr

ent (

A)

Tc = 25°CTj = 175°CSingle Pulse

1msec

10msecOPERATION IN THIS AREA LIMITED BY RDS(on)

100µsec

DC


StrongIRFET™


Figure 13 Typical On-Resistance vs. Drain Current

Figure 14 Threshold Voltage vs. Temperature

0 25 50 75 100 125 150 175 200

ID, Drain Current (A)

5.0

5.5

6.0

6.5

7.0

R DS(o

n),

Drai

n-to

-Sou

rce

On

Resi

stan

ce (m

)

VGS = 6.0VVGS = 7.0VVGS = 8.0VVGS = 10V

-75 -50 -25 0 25 50 75 100 125 150 175

TJ , Temperature ( °C )

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

V GS(t

h), Ga

te th

resh

old

Volta

ge (V

)

ID = 270µA

ID = 1.0mAID = 1.0A

Figure 15 Maximum Effective Transient Thermal Impedance, Junction-to-Case

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

1

Ther

mal

Res

pons

e ( Z

thJC

) °C/

W

0.20

0.10

D = 0.50

0.020.01

0.05

SINGLE PULSE( THERMAL RESPONSE )

Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc

Final Datasheet 10 2020-01-07

StrongIRFET™


Figure 16 Avalanche Current vs. Pulse Width

Figure 17 Maximum Avalanche Energy vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 16, 17: (For further info, see AN-1005 at www.infineon.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. DT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

0.1

1

10

100

1000

Aval

anch

e Cu

rren

t (A)

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 25°C and Tstart = 150°C.

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse)

25 50 75 100 125 150 175

Starting T J , Junction Temperature (°C)

0

100

200

300

400

500

600

700

800

900

E AR , A

vala

nche

Ene

rgy

(mJ)

TOP Single Pulse BOTTOM 1.0% Duty CycleID = 82A


StrongIRFET™


Figure 18 Typical Recovery Current vs. dif/dt Figure 19 Typical Recovery Current vs. dif/dt

100 200 300 400 500 600 700 800 900 1000

diF /dt (A/µs)

0

10

20

30

40

50

60

I RRM

(A)

IF = 55A

VR = 170V

TJ = 25°C

TJ = 125°C

100 200 300 400 500 600 700 800 900 1000

diF /dt (A/µs)

0

10

20

30

40

50

60

I RRM

(A)

IF = 82A

VR = 170V

TJ = 25°C

TJ = 125°C

Figure 20 Typical Stored Charge vs. dif/dt Figure 21 Typical Stored Charge vs. dif/dt

100 200 300 400 500 600 700 800 900 1000

diF /dt (A/µs)

0

500

1000

1500

2000

2500

3000

3500

4000

QRR

(nC)

IF = 82A

VR = 170V

TJ = 25°C

TJ = 125°C

100 200 300 400 500 600 700 800 900 1000

diF /dt (A/µs)

0

500

1000

1500

2000

2500

3000

3500

QRR

(nC)

IF = 55A

VR = 170V

TJ = 25°C

TJ = 125°C


StrongIRFET™


Figure 22 Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET™ Power MOSFETs

Figure 23a Unclamped Inductive Test Circuit Figure 23b Unclamped Inductive Waveforms


StrongIRFET™


Figure 24a Switching Time Test Circuit

Figure 24b Switching Time Waveforms

Figure 25a Gate Charge Test Circuit Figure 25b Gate Charge Waveform


StrongIRFET™

IRF200P222

TO-247AC Package Outline (Dimensions are shown in millimeters (inches))

TO-247AC package is not recommended for Surface Mount Application.

TO-247AC Part Marking Information

YEAR 1 = 2001

DATE CODE

PART NUMBERINTERNATIONAL

LOGORECTIFIER

ASSEMBLY

56 57

IRFPE30

135H

LINE Hindicates "Lead-Free" WEEK 35LOT CODE

IN THE ASSEMBLY LINE "H"

ASSEMBLED ON WW 35, 2001

Note: "P" in assembly line position

EXAMPLE:WITH ASSEMBLY THIS IS AN IRFPE30

LOT CODE 5657

Package Information

5 Package Information


StrongIRFET™

IRF200P222

† Applicable version of JEDEC standard at the time of product release.

Qualification Information

Qualification Level Industrial

(per JEDEC JESD47F) †

Moisture Sensitivity Level TO-247AC N/A

RoHS Compliant Yes

Qualification Information

6 Qualification Information


StrongIRFET™

IRF200P222 Revision History

Revision History

Major changes since the last revision

Page or Reference Revision Date Description of changes

All pages 2.0 2017-03-10 First release data sheet.

All pages 2.1 2020-01-07 Update from “IR MOSFT/StrongIRFET™” to “StrongIRFET™” -all pages Update Package picture –page1


StrongIRFET™

IRF200P222

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IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

Edition 2015-05-06 Published by Infineon Technologies AG 81726 Munich, Germany © 2016 Infineon Technologies AG. All Rights Reserved. Do you have a question about this document? Email: [email protected] Document reference

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IRF200P222 Product Datasheet - Infineon Technologies