Datasheet AIKQ100N60CT - Infineon Technologies

Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1www.infineon.com 2017-02-09

AIKQ100N60CT

TRENCHSTOPTMSeries

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryantiparallelEmitterControlleddiodeFeatures:

•AutomotiveAEC-Q101qualified•DesignedforDC/ACconvertersforAutomotiveApplication•VerylowVCE(sat)1.5V(typ.)•Maximumjunctiontemperature175°C•Dynamicallystresstested•Shortcircuitwithstandtime5µs•100%shortcircuittested•100%ofthepartsaredynamicallytested•PositivetemperaturecoefficientinVCE(sat)•LowEMI•LowgatechargeQG•Greenpackage•Verysoft,fastrecoveryantiparallelEmitterControlledHEdiode•TRENCHSTOPTMandFieldstoptechnologyfor600Vapplicationsoffers:-verytightparameterdistribution-highruggedness,temperaturestablebehavior-veryhighswitchingspeed

Applications:

•Maininverter•Climatecompressor•PTCheater•Motordrives

G

C

E

KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageAIKQ100N60CT 600V 100A 1.5V 175°C AK100DCT PG-TO247-3-46

Datasheet 2 V2.12017-02-09

AIKQ100N60CT

TRENCHSTOPTMSeries

TableofContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Datasheet 3 V2.12017-02-09

AIKQ100N60CT

TRENCHSTOPTMSeries

MaximumRatings

Parameter Symbol Value UnitCollector-emittervoltage,Tvj≥25°C VCE 600 V

DCcollectorcurrent,limitedbyTvjmaxTC=25°CvaluelimitedbybondwireTC=130°C

IC 160.0100.0

A

Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 400.0 A

Turn off safe operating areaVCE≤600V,Tvj≤175°C,tp=1µs - 400.0 A

Diodeforwardcurrent,limitedbyTvjmaxTC=25°CvaluelimitedbybondwireTC=117°C

IF 160.0100.0

A

Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 400.0 A

Gate-emitter voltage VGE ±20 V

Short circuit withstand timeVGE=15.0V,VCC≤400VAllowed number of short circuits < 1000Time between short circuits: ≥ 1.0sTvj=150°C

tSC

5

µs

PowerdissipationTC=25°C Ptot 714.0 W

Operating junction temperature Tvj -40...+175 °C

Storage temperature Tstg -55...+150 °C

Soldering temperature,1)

wave soldering 1.6mm (0.063in.) from case for 10s 260 °C

ThermalResistance

Valuemin. typ. max.

Parameter Symbol Conditions Unit

RthCharacteristics

IGBT thermal resistance,2)

junction - case Rth(j-c) - - 0.21 K/W

Diode thermal resistance,2)

junction - case Rth(j-c) - - 0.35 K/W

Thermal resistancejunction - ambient Rth(j-a) - - 40 K/W

1) Package not recommended for surface mount application2) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included.

Datasheet 4 V2.12017-02-09

AIKQ100N60CT

TRENCHSTOPTMSeries

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.


StaticCharacteristic

Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 600 - - V

Collector-emitter saturation voltage VCEsat

VGE=15.0V,IC=100.0ATvj=25°CTvj=175°C

--

1.501.90

2.00-

V

Diode forward voltage VF

VGE=0V,IF=100.0ATvj=25°CTvj=175°C

--

1.651.60

2.05-

V

Gate-emitter threshold voltage VGE(th) IC=1.60mA,VCE=VGE 4.1 4.9 5.7 V

Zero gate voltage collector current ICESVCE=600V,VGE=0VTvj=25°CTvj=175°C

--

-2500

40-

µA

Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA

Transconductance gfs VCE=20V,IC=100.0A - 63.0 - S

Integrated gate resistor rG none Ω

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.


DynamicCharacteristic

Input capacitance Cies - 6230 -

Output capacitance Coes - 360 -

Reverse transfer capacitance Cres - 175 -

VCE=25V,VGE=0V,f=1MHz pF

Gate charge QGVCC=480V,IC=100.0A,VGE=15V - 610.0 - nC

Short circuit collector currentMax. 1000 short circuitsTime between short circuits: ≥ 1.0s

IC(SC)VGE=15.0V,VCC≤400V,tSC≤5µsTvj=150°C

- 802 - A

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=25°CTurn-on delay time td(on) - 30 - ns

Rise time tr - 38 - ns

Turn-off delay time td(off) - 290 - ns

Fall time tf - 31 - ns

Turn-on energy Eon - 3.10 - mJ

Turn-off energy Eoff - 2.50 - mJ

Total switching energy Ets - 5.60 - mJ

Tvj=25°C,VCC=400V,IC=100.0A,VGE=0.0/15.0V,RG(on)=3.6Ω,RG(off)=3.6Ω,Lσ=63nH,Cσ=31pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.

Datasheet 5 V2.12017-02-09

AIKQ100N60CT

TRENCHSTOPTMSeries

DiodeCharacteristic,atTvj=25°C

Diode reverse recovery time trr - 225 - ns

Diode reverse recovery charge Qrr - 2.80 - µC

Diode peak reverse recovery current Irrm - 23.0 - A

Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -393 - A/µs

Tvj=25°C,VR=400V,IF=100.0A,diF/dt=1100A/µs

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=175°CTurn-on delay time td(on) - 31 - ns

Rise time tr - 52 - ns

Turn-off delay time td(off) - 351 - ns

Fall time tf - 42 - ns

Turn-on energy Eon - 6.00 - mJ

Turn-off energy Eoff - 3.70 - mJ

Total switching energy Ets - 9.70 - mJ

Tvj=175°C,VCC=400V,IC=100.0A,VGE=0.0/15.0V,RG(on)=3.6Ω,RG(off)=3.6Ω,Lσ=63nH,Cσ=31pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.

DiodeCharacteristic,atTvj=175°C

Diode reverse recovery time trr - 300 - ns

Diode reverse recovery charge Qrr - 8.70 - µC

Diode peak reverse recovery current Irrm - 50.0 - A

Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -847 - A/µs

Tvj=175°C,VR=400V,IF=100.0A,diF/dt=1050A/µs

Datasheet 6 V2.12017-02-09

AIKQ100N60CT

TRENCHSTOPTMSeries

Figure 1. Powerdissipationasafunctionofcasetemperature(Tj≤175°C)

TC,CASETEMPERATURE[°C]

Ptot ,POWERDISSIPATION[W

]

25 50 75 100 125 150 1750

100

200

300

400

500

600

700

800

Figure 2. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tj≤175°C)

TC,CASETEMPERATURE[°C]

IC,C

OLLECTO

RCURRENT[A]

25 50 75 100 125 150 1750

20

40

60

80

100

120

140

160

180

Figure 3. Typicaloutputcharacteristic(Tj=25°C)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

IC,C

OLLECTO

RCURRENT[A]

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.00

30

60

90

120

150

180

210

240

270

300VGE=20V

15V

13V

11V

9V

8V

7V

6V

Figure 4. Typicaloutputcharacteristic(Tj=175°C)


IC,C

OLLECTO

RCURRENT[A]

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.00

30

60

90

120

150

180

210

240

270

300VGE=20V

15V

13V

11V

9V

8V

7V

6V

Datasheet 7 V2.12017-02-09

AIKQ100N60CT

TRENCHSTOPTMSeries

Figure 5. Typicaltransfercharacteristic(VCE=20V)

VGE,GATE-EMITTERVOLTAGE[V]

IC,C

OLLECTO

RCURRENT[A]

0 2 4 6 8 10 12 140

30

60

90

120

150

180

210

240

270

300Tj=25°CTj=175°C

Figure 6. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)

Tj,JUNCTIONTEMPERATURE[°C]

VCE(sat) ,COLLECTO

R-EMITTE

RSATU

RATION[V

]

0 25 50 75 100 125 150 1750.0

0.3

0.6

0.9

1.2

1.5

1.8

2.1

2.4

2.7

3.0IC=38AIC=75AIC=100AIC=150A

Figure 7. Typicalswitchingtimesasafunctionofcollectorcurrent(inductiveload,Tj=175°C,VCE=400V,VGE=15/0V,rG=3,6Ω,DynamictestcircuitinFigure E)

IC,COLLECTORCURRENT[A]

t,SWITCHINGTIMES[ns]

0 25 50 75 100 125 150 175 20010

100

1000td(off)

tftd(on)

tr

Figure 8. Typicalswitchingtimesasafunctionofgateresistor(inductiveload,Tj=175°C,VCE=400V,VGE=15/0V,IC=100A,DynamictestcircuitinFigure E)

rG,GATERESISTOR[Ω]


0 10 20 30 40 50 60 70 8010

100

1000

1E+4td(off)

tftd(on)

tr

Datasheet 8 V2.12017-02-09

AIKQ100N60CT

TRENCHSTOPTMSeries

Figure 9. Typicalswitchingtimesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=15/0V,IC=100A,rG=3,6Ω,DynamictestcircuitinFigure E)



25 50 75 100 125 150 17510

100

1000td(off)

tftd(on)

tr

Figure 10. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=1.6mA)


VGE(th) ,GATE

-EMITTE

RTHRESHOLD

VOLTAGE[V

]

0 25 50 75 100 125 1500

1

2

3

4

5

6

7typ.min.max.

Figure 11. Typicalswitchingenergylossesasafunctionofcollectorcurrent(inductiveload,Tj=175°C,VCE=400V,VGE=15/0V,rG=3,6Ω,DynamictestcircuitinFigure E)

IC,COLLECTORCURRENT[A]

E,S

WITCHINGENERGYLOSSES[m

J]

0 25 50 75 100 125 150 175 2000

5

10

15

20

25

30Eoff

Eon

Ets

Figure 12. Typicalswitchingenergylossesasafunctionofgateresistor(inductiveload,Tj=175°C,VCE=400V,VGE=15/0V,IC=100A,DynamictestcircuitinFigure E)

rG,GATERESISTOR[Ω]

E,S


J]

0 10 20 30 40 50 60 70 800

10

20

30

40

50

60

70Eoff

Eon

Ets

Datasheet 9 V2.12017-02-09

AIKQ100N60CT

TRENCHSTOPTMSeries

Figure 13. Typicalswitchingenergylossesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=15/0V,IC=100A,rG=3,6Ω,DynamictestcircuitinFigure E)


E,S


J]

25 50 75 100 125 150 1750

1

2

3

4

5

6

7

8

9

10Eoff

Eon

Ets

Figure 14. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(inductiveload,Tj=175°C,VGE=15/0V,IC=100A,RG=3,6Ω,DynamictestcircuitinFigure E)


E,S


J]

200 300 400 5000.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

16.0Eoff

Eon

Ets

Figure 15. Typicalgatecharge(IC=100A)

QGE,GATECHARGE[nC]

VGE,G

ATE

-EMITTE

RVOLTAGE[V

]

0 100 200 300 400 500 600 7000

2

4

6

8

10

12

14

16120V480V

Figure 16. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)


C,C

APACITANCE[pF]

0 5 10 15 20 25 3010

100

1000

1E+4

Cies

Coes

Cres

Datasheet 10 V2.12017-02-09

AIKQ100N60CT

TRENCHSTOPTMSeries

Figure 17. Typicalshortcircuitcollectorcurrentasafunctionofgate-emittervoltage(VCE≤400V,startatTj≤150°C)


IC(SC) ,SHORTCIRCUITCOLLECTO

RCURRENT[A]

12 13 14 15 16 17 18 19 200

200

400

600

800

1000

1200

1400

1600

Figure 18. Shortcircuitwithstandtimeasafunctionofgate-emittervoltage(VCE=400V,startatTj=25°C,Tjmax≤150°C)


tSC,S

HORTCIRCUITW

ITHSTA

NDTIME[µs]

10 11 12 13 14 150

2

4

6

8

10

12

14

Figure 19. IGBTtransientthermalimpedanceasafunctionofpulsewidthfordifferentdutycyclesD(D=tp/T)

tp,PULSEWIDTH[s]

ZthJC,TRANSIENTTH

ERMALIMPEDANCE[K

/W]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

D=0.50.20.10.050.020.01single pulse

i:ri[K/W]:τi[s]:

10.030457872.0E-4

20.049494462.1E-3

30.12808140.01548802

43.4E-30.2130233

Figure 20. DiodetransientthermalimpedanceasafunctionofpulsewidthfordifferentdutycyclesD(D=tp/T)

tp,PULSEWIDTH[s]

ZthJC,TRANSIENTTH

ERMALIMPEDANCE[K

/W]

1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

D=0.50.20.10.050.020.01single pulse

i:ri[K/W]:τi[s]:

10.053760812.0E-4

20.115742.2E-3

30.18316250.01444578

44.6E-30.2132621

Datasheet 11 V2.12017-02-09

AIKQ100N60CT

TRENCHSTOPTMSeries

Figure 21. Typicalreverserecoverytimeasafunctionofdiodecurrentslope(VR=400V,DynamictestcircuitinFigureE)

diF/dt,DIODECURRENTSLOPE[A/µs]

trr,R

EVERSERECOVERYTIME[ns]

500 600 700 800 900 1000 1100 12000

100

200

300

400

500

600

700

800Tj=25°C, IF = 100ATj=175°C, IF = 100A

Figure 22. Typicalreverserecoverychargeasafunctionofdiodecurrentslope(VR=400V,DynamictestcircuitinFigureE)


Qrr,R

EVERSERECOVERYCHARGE[µC]

500 600 700 800 900 1000 1100 12000

1

2

3

4

5

6

7

8

9

10Tj=25°C, IF = 100ATj=175°C, IF = 100A

Figure 23. Typicalreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V,DynamictestcircuitinFigureE)


Irr,R

EVERSERECOVERYCURRENT[A]

500 600 700 800 900 1000 1100 12000

10

20

30

40

50

60Tj=25°C, IF = 100ATj=175°C, IF = 100A

Figure 24. Typicaldiodepeakrateoffallofreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V,DynamictestcircuitinFigureE)


dIrr/dt,diodepeakrateoffallofI

rr[A

/µs]

500 600 700 800 900 1000 1100 1200-1200

-1000

-800

-600

-400

-200

0Tj=25°C, IF = 100ATj=175°C, IF = 100A

Datasheet 12 V2.12017-02-09

AIKQ100N60CT

TRENCHSTOPTMSeries

Figure 25. Typicaldiodeforwardcurrentasafunctionofforwardvoltage

VF,FORWARDVOLTAGE[V]

IF ,FORWARDCURRENT[A]

0.0 0.5 1.0 1.5 2.0 2.5 3.00

50

100

150

200

250

300Tj=25°CTj=175°C

Figure 26. Typicaldiodeforwardvoltageasafunctionofjunctiontemperature


VF ,FO

RWARDVOLTAGE[V

]

0 25 50 75 100 125 150 1750.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50IF=38AIF=75AIF=100AIF=150A

Datasheet 13 V2.12017-02-09

AIKQ100N60CT

TRENCHSTOPTMSeries

MILLIMETERS

5.44 (BSC)

c

E3

D

E

D1

D2

L1

e

L

N

E1

b1

A

A1

b

A2

b2

DIM

0.59

1.35

-

20.9016.25

15.70

1.05

19.80

13.10

3

MIN4.902.31

1.161.90

1.96

0.053

0.8230.640

0.618

0.023

0.1930.091

0.0460.075

0.041

0.077

0.780

0.516

0.66

16.85

1.5513.50

21.10

15.90

20.10

1.35

4.30

5.102.51

1.262.10

MAX

2.06

0.026

3

0.663

0.5310.061

0.831

0.626

0.053

0.7910.169

INCHES

MIN MAX0.2010.099

0.0500.083

0.081

EUROPEAN PROJECTION

ISSUE DATE

0

SCALE

7.5mm

5 5

0

REVISION

13-08-2014

01

DOCUMENT NO.

Z8B00174295

0.214 (BSC)

-

1.96 0.0772.25 0.089

D3 0.58 0.0230.78 0.031

R 1.90 0.0752.10 0.083

Package Drawing PG-TO247-3-46

Datasheet 14 V2.12017-02-09

AIKQ100N60CT

TRENCHSTOPTMSeries

t

a b

td(off)

tf t

rtd(on)

90% IC

10% IC

90% IC

10% VGE

10% IC

t

90% VGE

t

t

90% VGE

VGE

(t)

t

t

tt1 t

4

2% IC

10% VGE

2% VCE

t2

t3

E

t

t

V I toff

= x x d

1

2

CE CE

t

t

V I ton

= x x d

3

4

CE C

CC

dI /dtF

dI

I,V

Figure A.

Figure B.

Figure C. Definition of diode switchingcharacteristics

Figure E. Dynamic test circuit

Figure D.

I (t)C

Parasitic inductance L ,

parasitic capacitor C ,

relief capacitor C ,

(only for ZVT switching)

s

s

r

t t t

Q Q Qrr a b

rr a b

= +

= +

Qa Qb

V (t)CE

VGE

(t)

I (t)C

V (t)CE

Testing Conditions

Datasheet 15 V2.12017-02-09

AIKQ100N60CT

TRENCHSTOPTMSeries

RevisionHistory

AIKQ100N60CT

Revision:2017-02-09,Rev.2.1Previous Revision

Revision Date Subjects (major changes since last revision)

2.1 2017-02-09 Data sheet created

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Datasheet AIKQ100N60CT - Infineon Technologies