Datasheet IPB65R090CFD7 - Infineon Technologies

1

IPB65R090CFD7

Rev.2.0,2020-10-19Final Data Sheet

12

3

tab

D²PAK

Drain

Pin 2, Tab

Gate

Pin 1

Source

Pin 3

*1

*1: Internal body diode

MOSFET650VCoolMOSªCFD7SJPowerDeviceThelatest650VCoolMOS™CFD7extendsthevoltageclassofferingoftheCFD7familyandisasuccessortothe650VCoolMOS™CFD2.Resultingfromimprovedswitchingperformanceandexcellentthermalbehavior,650VCooMOS™CFD7offershighestefficiencyinresonantswitchingtopologies,suchasLLCandphase-shift-full-bridge(ZVS).AspartofInfineon’sfastbodydiodeportfolio,thisnewproductseriesblendsalladvantagesofafastswitchingtechnologytogetherwithsuperiorhardcommutationrobustness.TheCoolMOS™CFD7technologymeetshighestefficiencyandreliabilitystandardsandfurthermoresupportshighpowerdensitysolutions.

Features•Ultra-fastbodydiode•650Vbreakdownvoltage•Best-in-classRDS(on)•Reducedswitchinglosses•LowRDS(on)dependencyovertemperature

Benefits•Excellenthardcommutationruggedness•Extrasafetymarginfordesignswithincreasedbusvoltage•Enablingincreasedpowerdensitysolutions•OutstandinglightloadefficiencyinindustrialSMPSapplications•ImprovedfullloadefficiencyinindustrialSMPSapplications•PricecompetitivenessoverpreviousCoolMOS™families

PotentialapplicationsSuitableforSoftSwitchingtopologiesOptimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server,Telecom,EVCharging,Solar

ProductvalidationFullyqualifiedaccordingtoJEDECforIndustrialApplications

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj,max 700 V

RDS(on),max 90 mΩ

Qg,typ 53 nC

ID,pulse 107 A

Eoss @ 400V 7.4 µJ

Body diode diF/dt 1300 A/µs

Type/OrderingCode Package Marking RelatedLinksIPB65R090CFD7 PG-TO263-3 65R090F7 see Appendix A

2

650VCoolMOSªCFD7SJPowerDeviceIPB65R090CFD7


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

3



1MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current1) ID --

--

2516 A TC=25°C

TC=100°C

Pulsed drain current2) ID,pulse - - 107 A TC=25°C

Avalanche energy, single pulse EAS - - 125 mJ ID=5.0A; VDD=50V; see table 10

Avalanche energy, repetitive EAR - - 0.63 mJ ID=5.0A; VDD=50V; see table 10

Avalanche current, single pulse IAS - - 5.0 A -

MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400VGate source voltage (static) VGS -20 - 20 V static;

Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)

Power dissipation Ptot - - 127 W TC=25°CStorage temperature Tstg -55 - 150 °C -

Operating junction temperature Tj -55 - 150 °C -

Mounting torque - - - - Ncm -

Continuous diode forward current1) IS - - 25 A TC=25°CDiode pulse current2) IS,pulse - - 107 A TC=25°C

Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD<=12.5A,Tj=25°C see table 8

Maximum diode commutation speed diF/dt - - 1300 A/µs VDS=0...400V,ISD<=12.5A,Tj=25°C see table 8

Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min

1) Limited by Tj max.2) Pulse width tp limited by Tj,max3) Identical low side and high side switch with identical RG

4



2Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction - case RthJC - - 0.98 °C/W -

Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint

Thermal resistance, junction - ambientfor SMD version RthJA - 35 45 °C/W

Device on 40mm*40mm*1.5mmepoxy PCB FR4 with 6cm² (onelayer, 70µm thickness) copper areafor drain connection and cooling.PCB is vertical without air streamcooling.

Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C reflow MSL1

5



3ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 650 - - V VGS=0V,ID=1mAGate threshold voltage V(GS)th 3.5 4 4.5 V VDS=VGS,ID=0.63mA

Zero gate voltage drain current1) IDSS --

-10

137 µA VDS=650V,VGS=0V,Tj=25°C

VDS=650V,VGS=0V,Tj=125°C

Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

0.0680.15

0.090- Ω VGS=10V,ID=12.5A,Tj=25°C

VGS=10V,ID=12.5A,Tj=150°C

Gate resistance RG - 5.9 - Ω f=1MHz,opendrain

Table5DynamiccharacteristicsValues


Input capacitance Ciss - 2513 - pF VGS=0V,VDS=400V,f=250kHzOutput capacitance Coss - 40 - pF VGS=0V,VDS=400V,f=250kHz

Effective output capacitance, energyrelated2) Co(er) - 92 - pF VGS=0V,VDS=0...400V

Effective output capacitance, timerelated3) Co(tr) - 955 - pF ID=constant,VGS=0V,VDS=0...400V

Turn-on delay time td(on) - 25 - ns VDD=400V,VGS=13V,ID=12.5A,RG=5.3Ω;seetable9

Rise time tr - 11 - ns VDD=400V,VGS=13V,ID=12.5A,RG=5.3Ω;seetable9

Turn-off delay time td(off) - 92 - ns VDD=400V,VGS=13V,ID=12.5A,RG=5.3Ω;seetable9

Fall time tf - 5 - ns VDD=400V,VGS=13V,ID=12.5A,RG=5.3Ω;seetable9

Table6GatechargecharacteristicsValues


Gate to source charge Qgs - 14 - nC VDD=400V,ID=12.5A,VGS=0to10VGate to drain charge Qgd - 16 - nC VDD=400V,ID=12.5A,VGS=0to10VGate charge total Qg - 53 - nC VDD=400V,ID=12.5A,VGS=0to10VGate plateau voltage Vplateau - 5.7 - V VDD=400V,ID=12.5A,VGS=0to10V

1) Maximum specification is defined by calculated six sigma upper confidence bound2)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V3)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

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Table7ReversediodecharacteristicsValues


Diode forward voltage VSD - 1.0 - V VGS=0V,IF=12.5A,Tj=25°C

Reverse recovery time trr - 147 220.5 ns VR=400V,IF=12.5A,diF/dt=100A/µs;see table 8

Reverse recovery charge Qrr - 0.78 1.56 µC VR=400V,IF=12.5A,diF/dt=100A/µs;see table 8

Peak reverse recovery current Irrm - 9.8 - A VR=400V,IF=12.5A,diF/dt=100A/µs;see table 8

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4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

25

50

75

100

125

150

Ptot=f(TC)

Diagram2:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-3

10-2

10-1

100

101

102

103

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-3

10-2

10-1

100

101

102

103

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=80°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[°C/W

]

10-5 10-4 10-3 10-2 10-110-2

10-1

100

101

0.5

0.2

0.1

0.05

0.020.01

single pulse

ZthJC=f(tP);parameter:D=tp/T

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Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

40

80

120

160

200

20 V

10 V

8 V

7 V

6 V

5.5 V5 V4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

25

50

75

100

125

20 V

10 V

8 V

7 V

6 V

5.5 V

5 V4.5 V

ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance

ID[A]

RDS(on

) [Ω]

0 25 50 75 100 1250.120

0.140

0.160

0.180

0.200

20 V

10 V

7 V6.5 V6 V

5.5 V

RDS(on)=f(ID);Tj=125°C;parameter:VGS

Diagram8:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [no

rmalized]

-50 -25 0 25 50 75 100 125 1500.5

1.0

1.5

2.0

2.5

RDS(on)=f(Tj);ID=12.5A;VGS=10V

9



Diagram9:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 10 120

50

100

150

200

150 °C

25 °C

ID=f(VGS);VDS=20V;parameter:Tj

Diagram10:Typ.gatecharge

Qgate[nC]

VGS [V]

0 10 20 30 40 50 60 700

2

4

6

8

10

12

120 V 400 V

VGS=f(Qgate);ID=12.5Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.810-1

100

101

102

125 °C25 °C

IF=f(VSD);parameter:Tj

Diagram12:Avalancheenergy

Tj[°C]

EAS [mJ]

25 50 75 100 125 1500

25

50

75

100

125

150

EAS=f(Tj);ID=5.0A;VDD=50V

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Diagram13:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-50 -25 0 25 50 75 100 125 150580

610

640

670

700

730

VBR(DSS)=f(Tj);ID=1mA

Diagram14:Typ.capacitances

VDS[V]

C[p

F]

0 100 200 300 400 500100

101

102

103

104

105

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=250kHz

Diagram15:Typ.Cossstoredenergy

VDS[V]

Eoss[µ

J]

0 100 200 300 400 5000

2

4

6

8

10

Eoss=f(VDS)

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5TestCircuits

Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDS

VGS

Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform

VDS

V(BR)DS

IDVDS

VDSID

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6PackageOutlines

Figure1OutlinePG-TO263-3,dimensionsinmm/inches

13



7AppendixA

Table11RelatedLinks

• IFXCoolMOSCFD7650VWebpage:www.infineon.com

• IFXCoolMOSCFD7650Vapplicationnote:www.infineon.com

• IFXCoolMOSCFD7650Vsimulationmodel:www.infineon.com

• IFXDesigntools:www.infineon.com

http://www.infineon.com/tools

http://www.infineon.com/CFD7 650V



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RevisionHistoryIPB65R090CFD7

Revision:2020-10-19,Rev.2.0

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2020-10-19 Release of final version

TrademarksAllreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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PublishedbyInfineonTechnologiesAG81726München,Germany©2020InfineonTechnologiesAGAllRightsReserved.

LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics(“Beschaffenheitsgarantie”).

Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthisdocumentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseoftheproductofInfineonTechnologiesincustomer’sapplications.Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication.

InformationForfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesOffice(www.infineon.com).

WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

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Datasheet IPB65R090CFD7 - Infineon Technologies