Datasheet AIKW40N65DF5 - Infineon Technologies

Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1www.infineon.com 2017-06-30

AIKW40N65DF5

Highspeedswitchingseriesfifthgeneration

HighspeedfastIGBTinTRENCHSTOPTM5technologycopackedwithRAPID1fastandsoftantiparalleldiodeFeaturesandBenefits:

HighspeedF5technologyoffering:•Best-in-Classefficiencyinhardswitchingandresonanttopologies•650Vbreakdownvoltage•LowgatechargeQG•IGBTcopackedwithRAPID1fastandsoftantiparalleldiode•Maximumjunctiontemperature175°C•Dynamicallystresstested•QualifiedaccordingtoAEC-Q101•Greenpackage(RoHScompliant)•CompleteproductspectrumandPSpiceModels:http://www.infineon.com/igbt/

Applications:

•Off-boardcharger•On-boardcharger•DC/DCconverter•Power-Factorcorrection

Packagepindefinition:

•Pin1-gate•Pin2&backside-collector•Pin3-emitter

G

C

E

12

3

KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageAIKW40N65DF5 650V 40A 1.6V 175°C AK40EDF5 PG-TO247-3

Datasheet 2 V2.12017-06-30

AIKW40N65DF5


TableofContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Datasheet 3 V2.12017-06-30

AIKW40N65DF5


MaximumRatings

Parameter Symbol Value UnitCollector-emittervoltage,Tvj≥25°C VCE 650 V

DCcollectorcurrent,limitedbyTvjmaxTC=25°CTC=100°C

IC 74.046.0

A

Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 120.0 A

Turn off safe operating areaVCE≤650V,Tvj≤175°C,tp=1µs1) - 120.0 A

Diodeforwardcurrent,limitedbyTvjmaxTC=25°CTC=100°C

IF 36.021.0

A

Diodepulsedcurrent,tplimitedbyTvjmax1) IFpuls 120.0 A

Gate-emitter voltageTransientGate-emittervoltage(tp≤10µs,D<0.010) VGE

±20±30 V

PowerdissipationTC=25°CPowerdissipationTC=100°C Ptot

250.0125.0 W

Operating junction temperature Tvj -40...+175 °C

Storage temperature Tstg -55...+150 °C

Soldering temperature,2)

wave soldering 1.6mm (0.063in.) from case for 10s 260 °C

Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm

ThermalResistance

Valuemin. typ. max.

Parameter Symbol Conditions Unit

RthCharacteristics

IGBT thermal resistance,junction - case Rth(j-C) - - 0.60 K/W

Diode thermal resistance,junction - case Rth(j-C) - - 1.80 K/W

Thermal resistancejunction - ambient Rth(j-a) - - 40 K/W

1) Defined by design. Not subject to production test.2) Package not recommended for surface mount applications

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AIKW40N65DF5


ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.


StaticCharacteristic

Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V

Collector-emitter saturation voltage VCEsat

VGE=15.0V,IC=40.0ATvj=25°CTvj=125°CTvj=175°C

---

1.601.801.90

2.10--

V

Diode forward voltage VF

VGE=0V,IF=20.0ATvj=25°CTvj=125°CTvj=175°C

---

1.551.531.49

1.80--

V

Gate-emitter threshold voltage VGE(th) IC=0.40mA,VCE=VGE 3.2 4.0 4.8 V

Zero gate voltage collector current ICESVCE=650V,VGE=0VTvj=25°CTvj=175°C

--

-1000

40-

µA

Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA

Transconductance gfs VCE=20V,IC=40.0A - 50.0 - S

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.


DynamicCharacteristic

Input capacitance Cies - 2500 -

Output capacitance Coes - 50 -

Reverse transfer capacitance Cres - 9 -

VCE=25V,VGE=0V,f=1MHz pF

Gate charge QGVCC=520V,IC=40.0A,VGE=15V - 95.0 - nC

Internal emitter inductancemeasured 5mm (0.197 in.) fromcase

LE - 13.0 - nH

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=25°CTurn-on delay time td(on) - 19 - ns

Rise time tr - 11 - ns

Turn-off delay time td(off) - 165 - ns

Fall time tf - 13 - ns

Turn-on energy Eon - 0.35 - mJ

Turn-off energy Eoff - 0.10 - mJ

Total switching energy Ets - 0.45 - mJ

Tvj=25°C,VCC=400V,IC=20.0A,VGE=0.0/15.0V,RG(on)=15.0Ω,RG(off)=15.0Ω,Lσ=30nH,Cσ=30pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.

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AIKW40N65DF5


Turn-on delay time td(on) - 18 - ns








DiodeCharacteristic,atTvj=25°C

Diode reverse recovery time trr - 73 - ns

Diode reverse recovery charge Qrr - 0.54 - µC

Diode peak reverse recovery current Irrm - 13.7 - A

Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -220 - A/µs

Tvj=25°C,VR=400V,IF=20.0A,diF/dt=1230A/µs






SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=150°CTurn-on delay time td(on) - 18 - ns








Turn-on delay time td(on) - 16 - ns








Datasheet 6 V2.12017-06-30

AIKW40N65DF5


DiodeCharacteristic,atTvj=150°C











Datasheet 7 V2.12017-06-30

AIKW40N65DF5


Figure 1. Powerdissipationasafunctionofcasetemperature(Tvj≤175°C)

TC,CASETEMPERATURE[°C]

Ptot ,PO

WER

DISSIPA

TION[W

]

25 50 75 100 125 150 1750

25

50

75

100

125

150

175

200

225

250

275

Figure 2. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tvj≤175°C)

TC,CASETEMPERATURE[°C]

IC,C

OLLEC

TORCURREN

T[A]

25 50 75 100 125 150 1750

10

20

30

40

50

60

70

80

Figure 3. Typicaloutputcharacteristic(Tvj=25°C)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

IC,C

OLLEC

TORCURREN

T[A]

0 1 2 3 4 50

20

40

60

80

100

120

VGE = 20V

18V

15V

12V

10V

8V

7V

6V

5V

Figure 4. Typicaloutputcharacteristic(Tvj=150°C)


IC,C

OLLEC

TORCURREN

T[A]

0 1 2 3 4 50

20

40

60

80

100

120

VGE = 20V

18V

15V

12V

10V

8V

7V

6V

5V

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AIKW40N65DF5


Figure 5. Typicaltransfercharacteristic(VCE=20V)

VGE,GATE-EMITTERVOLTAGE[V]

IC,C

OLLEC

TORCURREN

T[A]

4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.50

20

40

60

80

100

120Tj=25°CTj=150°C

Figure 6. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)

Tvj,JUNCTIONTEMPERATURE[°C]

VCEsat,C

OLLEC

TOR-EMITTE

RSAT

URAT

ION[V

]

0 25 50 75 100 125 150 1750.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50IC=10AIC=20AIC=40A

Figure 7. Typicalswitchingtimesasafunctionofcollectorcurrent(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,rG=15Ω,DynamictestcircuitinFigure E)

IC,COLLECTORCURRENT[A]

t,SW

ITCHINGTIMES

[ns]

0 20 40 60 80 100 1201

10

100

1000td(off)

tftd(on)

tr

Figure 8. Typicalswitchingtimesasafunctionofgateresistor(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,IC=20A,DynamictestcircuitinFigure E)

rG,GATERESISTOR[Ω]

t,SW

ITCHINGTIMES

[ns]

5 15 25 35 45 55 65 75 851

10

100

1000td(off)

tftd(on)

tr

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AIKW40N65DF5


Figure 9. Typicalswitchingtimesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=15/0V,IC=20A,rG=15Ω,DynamictestcircuitinFigureE)


t,SW

ITCHINGTIMES

[ns]

25 50 75 100 125 150 1751

10

100

1000td(off)

tftd(on)

tr

Figure 10. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=0.4mA)


VGE(th) ,GAT

E-EM

ITTE

RTHRES

HOLD

VOLTAG

E[V]

0 25 50 75 100 125 1501.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5typ.min.max.

Figure 11. Typicalswitchingenergylossesasafunctionofcollectorcurrent(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,rG=15Ω,DynamictestcircuitinFigure E)

IC,COLLECTORCURRENT[A]

E,S

WITCHINGENER

GYLO

SSES

[mJ]

0 20 40 60 80 100 1200

1

2

3

4

5

6

7

8Eoff

Eon

Ets

Figure 12. Typicalswitchingenergylossesasafunctionofgateresistor(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,IC=20A,DynamictestcircuitinFigure E)

rG,GATERESISTOR[Ω]

E,S

WITCHINGENER

GYLO

SSES

[mJ]

5 15 25 35 45 55 65 75 850.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6Eoff

Eon

Ets

Datasheet 10 V2.12017-06-30

AIKW40N65DF5


Figure 13. Typicalswitchingenergylossesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=15/0V,IC=20A,rG=15Ω,DynamictestcircuitinFigure E)


E,S

WITCHINGENER

GYLO

SSES

[mJ]

25 50 75 100 125 150 1750.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8Eoff

Eon

Ets

Figure 14. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(inductiveload,Tvj=150°C,VGE=15/0V,IC=20A,rG=15Ω,DynamictestcircuitinFigure E)


E,S

WITCHINGENER

GYLO

SSES

[mJ]

200 250 300 350 400 450 5000.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0Eoff

Eon

Ets

Figure 15. Typicalgatecharge(IC=40A)

QGE,GATECHARGE[nC]

VGE ,GAT

E-EM

ITTE

RVOLTAG

E[V]

0 20 40 60 80 1000

2

4

6

8

10

12

14

16VCC=130VVCC=520V

Figure 16. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)


C,C

APAC

ITAN

CE[pF]

0 5 10 15 20 25 301

10

100

1000

1E+4Cies

Coes

Cres

Datasheet 11 V2.12017-06-30

AIKW40N65DF5


Figure 17. IGBTtransientthermalimpedance(D=tp/T)

tp,PULSEWIDTH[s]

Zth(j -c

) ,TR

ANSIEN

TTH

ERMAL

IMPE

DAN

CE[K/W

]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.082454847.3E-5

20.1441977.0E-4

30.21517740.01235548

40.15817080.08020881

Figure 18. Diodetransientthermalimpedanceasafunctionofpulsewidth(D=tp/T)

tp,PULSEWIDTH[s]

Zth(j -c

) ,TR

ANSIEN

TTH

ERMAL

IMPE

DAN

CE[K/W

]

1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.67015843.4E-4

20.7757594.7E-3

30.35408260.04680901

Figure 19. Typicalreverserecoverytimeasafunctionofdiodecurrentslope(VR=400V)

diF/dt,DIODECURRENTSLOPE[A/µs]

trr,R

EVER

SEREC

OVE

RYTIME[ns]

500 700 900 1100 1300 150040

50

60

70

80

90

100

110

120

130Tj=25°C, IF = 20ATj=150°C, IF = 20A

Figure 20. Typicalreverserecoverychargeasafunctionofdiodecurrentslope(VR=400V)


Qrr ,REV

ERSE

REC

OVE

RYCHAR

GE[µC]

500 700 900 1100 1300 15000.2

0.4

0.6

0.8

1.0

1.2Tj=25°C, IF = 20ATj=150°C, IF = 20A

Datasheet 12 V2.12017-06-30

AIKW40N65DF5


Figure 21. Typicalreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V)


Irr,R

EVER

SEREC

OVE

RYCURREN

T[A]

500 700 900 1100 1300 15005

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20Tj=25°C, IF = 20ATj=150°C, IF = 20A

Figure 22. Typicaldiodepeakrateoffallofreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V)


dIrr /dt,D

IODEPE

AKRAT

EOFFA

LLOFIrr[A

/µs]

500 700 900 1100 1300 1500-400

-350

-300

-250

-200

-150

-100

-50

0Tj=25°C, IF = 20ATj=150°C, IF = 20A

Figure 23. Typicaldiodeforwardcurrentasafunctionofforwardvoltage

VF,FORWARDVOLTAGE[V]

IF ,FORWAR

DCURREN

T[A]

0.0 0.5 1.0 1.5 2.0 2.5 3.00

10

20

30

40

50

60Tj=25°CTj=150°C

Figure 24. Typicaldiodeforwardvoltageasafunctionofjunctiontemperature


VF ,FO

RWAR

DVOLTAG

E[V]

25 50 75 100 125 150 1750.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2IF=10AIF=20AIF=40A

Datasheet 13 V2.12017-06-30

AIKW40N65DF5


Package Drawing PG-TO247-3

Datasheet 14 V2.12017-06-30

AIKW40N65DF5


t

a b

td(off)

tf t

rtd(on)

90% IC

10% IC

90% IC

10% VGE

10% IC

t

90% VGE

t

t

90% VGE

VGE

(t)

t

t

tt1 t

4

2% IC

10% VGE

2% VCE

t2

t3

E

t

t

V I toff

= x x d

1

2

CE CE

t

t

V I ton

= x x d

3

4

CE C

CC

dI /dtF

dI

I,V

Figure A.

Figure B.

Figure C. Definition of diode switchingcharacteristics

Figure E. Dynamic test circuit

Figure D.

I (t)C

Parasitic inductance L ,

parasitic capacitor C ,

relief capacitor C ,

(only for ZVT switching)

s

s

r

t t t

Q Q Qrr a b

rr a b

= +

= +

Qa Qb

V (t)CE

VGE

(t)

I (t)C

V (t)CE

Testing Conditions

Datasheet 15 V2.12017-06-30

AIKW40N65DF5


RevisionHistory

AIKW40N65DF5

Revision:2017-06-30,Rev.2.1Previous Revision

Revision Date Subjects (major changes since last revision)

2.1 2017-06-30 Data sheet created

TrademarksofInfineonTechnologiesAGµHVIC™,µIPM™,µPFC™,AU-ConvertIR™,AURIX™,C166™,CanPAK™,CIPOS™,CIPURSE™,CoolDP™,CoolGaN™,COOLiR™,CoolMOS™,CoolSET™,CoolSiC™,DAVE™,DI-POL™,DirectFET™,DrBlade™,EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,GaNpowIR™,HEXFET™,HITFET™,HybridPACK™,iMOTION™,IRAM™,ISOFACE™,IsoPACK™,LEDrivIR™,LITIX™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OPTIGA™,OptiMOS™,ORIGA™,PowIRaudio™,PowIRStage™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,SmartLEWIS™,SOLIDFLASH™,SPOC™,StrongIRFET™,SupIRBuck™,TEMPFET™,TRENCHSTOP™,TriCore™,UHVIC™,XHP™,XMC™TrademarksupdatedNovember2015OtherTrademarksAllreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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Datasheet AIKW40N65DF5 - Infineon Technologies