Datasheet IPT015N10N5 - Infineon Technologies

1

IPT015N10N5

Rev.2.2,2016-10-13Final Data Sheet

Tab

12 3 4 5

86 7

HSOF

DrainTab

GatePin 1

SourcePin 2-8

MOSFETOptiMOSTM5Power-Transistor,100V

Features•Idealforhighfrequencyswitchingandsync.rec.•ExcellentgatechargexRDS(on)product(FOM)•Verylowon-resistanceRDS(on)•N-channel,normallevel•100%avalanchetested•Pb-freeplating;RoHScompliant•QualifiedaccordingtoJEDEC1)fortargetapplications•Halogen-freeaccordingtoIEC61249-2-21

Table1KeyPerformanceParametersParameter Value UnitVDS 100 V

RDS(on),max 1.5 mΩ

ID 300 A

Qoss 213 nC

QG(0V..10V) 169 nC

Type/OrderingCode Package Marking RelatedLinksIPT015N10N5 PG-HSOF-8 015N10N5 -

1) J-STD20 and JESD22

2

OptiMOSTM5Power-Transistor,100VIPT015N10N5


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

3



1MaximumratingsatTA=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current ID---

---

30024332

AVGS=10V,TC=25°CVGS=10V,TC=100°CVGS=10V,TC=25°C,RthJA=40K/W1)

Pulsed drain current2) ID,pulse - - 1200 A TC=25°C

Avalanche energy, single pulse3) EAS - - 775 mJ ID=150A,RGS=25Ω

Gate source voltage VGS -20 - 20 V -

Power dissipation Ptot - - 375 W TC=25°C

Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category;DIN IEC 68-1: 55/175/56

2Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction - case RthJC - 0.2 0.4 K/W -

Device on PCB,minimal footprint RthJA - - 62 K/W -

Device on PCB,6 cm² cooling area1) RthJA - - 40 K/W -

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drainconnection. PCB is vertical in still air.2) See Diagram 3 for more detailed information3) See Diagram 13 for more detailed information

4



3Electricalcharacteristics

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 100 - - V VGS=0V,ID=1mA

Gate threshold voltage VGS(th) 2.2 3.0 3.8 V VDS=VGS,ID=280µA

Zero gate voltage drain current IDSS --

0.110

5100 µA VDS=100V,VGS=0V,Tj=25°C

VDS=100V,VGS=0V,Tj=125°C

Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

1.31.6

1.52.0 mΩ VGS=10V,ID=150A

VGS=6V,ID=75A

Gate resistance1) RG - 1.4 2.1 Ω -

Transconductance gfs 140 280 - S |VDS|>2|ID|RDS(on)max,ID=100A

Table5Dynamiccharacteristics1)Values


Input capacitance Ciss - 12000 16000 pF VGS=0V,VDS=50V,f=1MHz

Output capacitance Coss - 1800 2300 pF VGS=0V,VDS=50V,f=1MHz

Reverse transfer capacitance Crss - 80 140 pF VGS=0V,VDS=50V,f=1MHz

Turn-on delay time td(on) - 36 - ns VDD=50V,VGS=10V,ID=100A,RG,ext=1.8Ω

Rise time tr - 30 - ns VDD=50V,VGS=10V,ID=100A,RG,ext=1.8Ω

Turn-off delay time td(off) - 85 - ns VDD=50V,VGS=10V,ID=100A,RG,ext=1.8Ω

Fall time tf - 30 - ns VDD=50V,VGS=10V,ID=100A,RG,ext=1.8Ω

Table6Gatechargecharacteristics2)Values


Gate to source charge Qgs - 53 - nC VDD=50V,ID=100A,VGS=0to10V

Gate charge at threshold Qg(th) - 36 - nC VDD=50V,ID=100A,VGS=0to10V

Gate to drain charge1) Qgd - 34 51 nC VDD=50V,ID=100A,VGS=0to10V

Switching charge Qsw - 51 - nC VDD=50V,ID=100A,VGS=0to10V

Gate charge total1) Qg - 169 211 nC VDD=50V,ID=100A,VGS=0to10V

Gate plateau voltage Vplateau - 4.4 - V VDD=50V,ID=100A,VGS=0to10V

Gate charge total, sync. FET Qg(sync) - 146 - nC VDS=0.1V,VGS=0to10V

Output charge1) Qoss - 213 284 nC VDD=50V,VGS=0V

1) Defined by design. Not subject to production test.2) See ″Gate charge waveforms″ for parameter definition

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Table7ReversediodeValues


Diode continuous forward current IS - - 300 A TC=25°C

Diode pulse current IS,pulse - - 1200 A TC=25°C

Diode forward voltage VSD - 0.9 1.2 V VGS=0V,IF=100A,Tj=25°C

Reverse recovery time1) trr - 103 206 ns VR=50V,IF=100A,diF/dt=100A/µs

Reverse recovery charge1) Qrr - 316 632 nC VR=50V,IF=100A,diF/dt=100A/µs

1) Defined by design. Not subject to production test.

6



4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 150 1750

50

100

150

200

250

300

350

400

Ptot=f(TC)

Diagram2:Draincurrent

TC[°C]

ID[A

]

0 25 50 75 100 125 150 175 2000

50

100

150

200

250

300

350

ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

10-1 100 101 102 10310-1

100

101

102

103

104

1 µs

10 µs

100 µs

1 ms

10 msDC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-6 10-5 10-4 10-3 10-2 10-1 10010-3

10-2

10-1

100

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tp);parameter:D=tp/T

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Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0.0 0.5 1.0 1.5 2.0 2.5 3.00

100

200

300

400

500

600

700

800

7 V10 V 6 V

5.5 V

5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.drain-sourceonresistance

ID[A]

RDS(on

) [m

Ω]

0 100 200 300 400 500 600 700 8000.0

0.5

1.0

1.5

2.0

2.5

3.0

5 V

5.5 V

6 V

7 V

10 V

RDS(on)=f(ID);Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 1 2 3 4 5 6 70

100

200

300

400

500

600

700

175 °C

25 °C

ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj

Diagram8:Typ.forwardtransconductance

ID[A]

gfs [S]

0 40 80 120 1600

40

80

120

160

200

240

280

320

360

gfs=f(ID);Tj=25°C

8



Diagram9:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [m

Ω]

-60 -20 20 60 100 140 1800.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

max

typ

RDS(on)=f(Tj);ID=150A;VGS=10V

Diagram10:Typ.gatethresholdvoltage

Tj[°C]

VGS(th) [V]

-60 -20 20 60 100 140 1800

1

2

3

4

2800 µA

280 µA

VGS(th)=f(Tj);VGS=VDS

Diagram11:Typ.capacitances

VDS[V]

C[p

F]

0 20 40 60 80 100101

102

103

104

105

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=1MHz

Diagram12:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.5 2.0 2.5100

101

102

103

104

25 °C175 °C175°C max25°C max

IF=f(VSD);parameter:Tj

9



Diagram13:Avalanchecharacteristics

tAV[µs]

IAV [A]

100 101 102 103100

101

102

103

25 °C

100 °C

125 °C

IAS=f(tAV);RGS=25Ω;parameter:Tj(start)

Diagram14:Typ.gatecharge

Qgate[nC]

VGS [V]

0 50 100 150 2000

1

2

3

4

5

6

7

8

9

10

80 V

50 V

20 V

VGS=f(Qgate);ID=100Apulsed;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-60 -20 20 60 100 140 18094

96

98

100

102

104

106

108

110

VBR(DSS)=f(Tj);ID=1mA

Gate charge waveforms

10



5PackageOutlines

Z8B00169619

REVISION

ISSUE DATE

EUROPEAN PROJECTION

02

20-02-2014

DOCUMENT NO.

E5

E4

K1

e

MILLIMETERS

A

DIM

MIN MAX

INCHES

MIN MAX

b1

c

D

D2

E

E1

N

L

2.20 2.40 0.087 0.094

9.70

0.40

10.28

9.70

1.60

9.90

0.60

10.58

10.10

2.10

0.382

0.016

0.405

0.382

0.063

0.390

0.024

0.416

0.398

0.083

8 8

1.20 (BSC) 0.047 (BSC)

b 0.70 0.90 0.028 0.035

1) partially covered with Mold Flash

b2 0.42 0.50 0.017 0.020

H

H1

11.48 11.88 0.452 0.468

H2 7.15 0.281

H3 3.59 0.141

H4 3.26 0.128

L1 0.70 0.028

3.30 0.130

7.50 0.295

8.50 0.335

9.46 0.372

6.55 6.75 0.258 0.266

4.18 0.165

L4 1.00 1.30 0.039 0.051

L2 0.60 0.024

2

SCALE

0

4mm

0

2

Figure1OutlinePG-HSOF-8

11



RevisionHistoryIPT015N10N5

Revision:2016-10-13,Rev.2.2

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2014-12-17 Release of final version

2.1 2015-02-23 Correction of SOA area with Ipulse = 1200A

2.2 2016-10-13 Update Avalanche Energy

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Datasheet IPT015N10N5 - Infineon Technologies