Datasheet IPA045N10N3 G - Infineon Technologies

1

IPA045N10N3G

Rev.2.4,2016-01-22Final Data Sheet

TO-220-FP

DrainPin 2

GatePin 1

SourcePin 3

MOSFETOptiMOSTM3Power-Transistor,100V

Features•N-channel,normallevel•ExcellentgatechargexRDS(on)product(FOM)•Verylowon-resistanceRDS(on)•175°Coperatingtemperature•Pb-freeleadplating;RoHScompliant•QualifiedaccordingtoJEDEC1)fortargetapplication•Idealforhigh-frequencyswitchingandsynchronousrectification•Halogen-freeaccordingtoIEC61249-2-21

Table1KeyPerformanceParametersParameter Value UnitVDS 100 V

RDS(on),max 4.5 mΩ

ID 64 A

Type/OrderingCode Package Marking RelatedLinksIPA045N10N3 G PG-TO220-FP 045N10N -

1) J-STD20 and JESD22

2

OptiMOSTM3Power-Transistor,100VIPA045N10N3G


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

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1MaximumratingsatTA=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current ID --

--

6445 A TC=25°C1)

TC=100°C

Pulsed drain current1) ID,pulse - - 256 A TC=25°C

Avalanche energy, single pulse EAS - - 540 mJ ID=64A,RGS=25Ω

Gate source voltage VGS -20 - 20 V -

Power dissipation Ptot - - 39 W TC=25°C

Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category;DIN IEC 68-1: 55/175/56

2Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction-case RthJC - - 3.8 K/W -

Thermal resistance, juntion-ambient,Leaded RthJA - - 80 K/W -

3Electricalcharacteristics

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 100 - - V VGS=0V,ID=1mA

Gate threshold voltage VGS(th) 2 2.7 3.5 V VDS=VGS,ID=150µA

Zero gate voltage drain current IDSS --

0.110

1100 µA VDS=100V,VGS=0V,Tj=25°C

VDS=100V,VGS=0V,Tj=125°C

Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

3.94.7

4.57.7 mΩ VGS=10V,ID=64A

VGS=6V,ID=32A

Gate resistance RG - 1.4 - Ω -

Transconductance gfs 60 119 - S |VDS|>2|ID|RDS(on)max,ID=64A

1) See Diagram 3

4



Table5DynamiccharacteristicsValues


Input capacitance Ciss - 6320 8410 pF VGS=0V,VDS=50V,f=1MHz

Output capacitance Coss - 1100 1460 pF VGS=0V,VDS=50V,f=1MHz

Reverse transfer capacitance Crss - 41 - pF VGS=0V,VDS=50V,f=1MHz

Turn-on delay time td(on) - 25 - ns VDD=50V,VGS=10V,ID=64A,RG,ext=1.6Ω

Rise time tr - 47 - ns VDD=50V,VGS=10V,ID=64A,RG,ext=1.6Ω

Turn-off delay time td(off) - 50 - ns VDD=50V,VGS=10V,ID=64A,RG,ext=1.6Ω

Fall time tf - 15 - ns VDD=50V,VGS=10V,ID=64A,RG,ext=1.6Ω

Table6Gatechargecharacteristics1)Values


Gate to source charge Qgs - 28 - nC VDD=50V,ID=64A,VGS=0to10V

Gate to drain charge Qgd - 16 - nC VDD=50V,ID=64A,VGS=0to10V

Switching charge Qsw - 25 - nC VDD=50V,ID=64A,VGS=0to10V

Gate charge total Qg - 88 117 nC VDD=50V,ID=64A,VGS=0to10V

Gate plateau voltage Vplateau - 4.4 - V VDD=50V,ID=64A,VGS=0to10V

Output charge Qoss - 117 155 nC VDD=50V,VGS=0V

Table7ReversediodeValues


Diode continous forward current IS - - 64 A TC=25°C

Diode pulse current IS,pulse - - 256 A TC=25°C

Diode forward voltage VSD - 0.9 1 V VGS=0V,IF=64A,Tj=25°C

Reverse recovery time trr - 69 - ns VR=50V,IF=64A,diF/dt=100A/µs

Reverse recovery charge Qrr - 140 - nC VR=50V,IF=64A,diF/dt=100A/µs

1) See ″Gate charge waveforms″ for parameter definition

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4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 50 100 150 2000

10

20

30

40

50

Ptot=f(TC)

Diagram2:Draincurrent

TC[°C]

ID[A

]

0 50 100 150 2000

10

20

30

40

50

60

70

ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

10-1 100 101 102 10310-1

100

101

102

103

1 µs

10 µs100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-1 100 10110-2

10-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tp);parameter:D=tp/T

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Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 1 2 3 4 50

50

100

150

200

2506 V

7.5 V

10 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.drain-sourceonresistance

ID[A]

RDS(on

) [m

Ω]

0 20 40 60 80 1000

2

4

6

8

10

4.5 V

5 V

6 V

7.5 V

10 V

RDS(on)=f(ID);Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 80

50

100

150

200

175 °C

25 °C

ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj

Diagram8:Typ.forwardtransconductance

ID[A]

gfs [S]

0 20 40 60 80 1000

40

80

120

160

gfs=f(ID);Tj=25°C

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Diagram9:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [m

Ω]

-60 -20 20 60 100 140 1800

2

4

6

8

10

98 %

typ

RDS(on)=f(Tj);ID=64A;VGS=10V

Diagram10:Typ.gatethresholdvoltage

Tj[°C]

VGS(th) [V]

-60 -20 20 60 100 140 1800.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

1500 µA

150 µA

VGS(th)=f(Tj);VGS=VDS;parameter:ID

Diagram11:Typ.capacitances

VDS[V]

C[p

F]

0 20 40 60 80101

102

103

104Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=1MHz

Diagram12:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.5 2.0100

101

102

103

25 °C175 °C25 °C, 98%175 °C, 98%

IF=f(VSD);parameter:Tj

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Diagram13:Avalanchecharacteristics

tAV[µs]

IAS [A]

100 101 102 103100

101

102

25 °C

100 °C

150 °C

IAS=f(tAV);RGS=25Ω;parameter:Tj(start)

Diagram14:Typ.gatecharge

Qgate[nC]

VGS [V]

0 20 40 60 80 1000

2

4

6

8

10

80 V

50 V

20 V

VGS=f(Qgate);ID=64Apulsed;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-60 -20 20 60 100 140 18090

95

100

105

110

VBR(DSS)=f(Tj);ID=1mA

Gate charge waveforms

9



5PackageOutlines

Figure1OutlinePG-TO220-FP,dimensionsinmm/inches

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RevisionHistoryIPA045N10N3 G

Revision:2016-01-22,Rev.2.4

Previous Revision

Revision Date Subjects (major changes since last revision)

2.4 2016-01-22 Insert RthJA

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Datasheet IPA045N10N3 G - Infineon Technologies