Datasheet IK#40N65H5 - Infineon Technologies

IGBTHighspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1fastandsoftantiparalleldiode

IKP40N65H5,IKW40N65H5650VDuoPackIGBTanddiodeHighspeedswitchingseriesfifthgeneration

Datasheet

IndustrialPowerControl

2

IKP40N65H5,IKW40N65H5Highspeedswitchingseriesfifthgeneration

Rev.2.1,2015-05-06

Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1fastandsoftantiparalleldiodeFeaturesandBenefits:

HighspeedH5technologyoffering•Best-in-Classefficiencyinhardswitchingandresonanttopologies•PlugandplayreplacementofpreviousgenerationIGBTs•650Vbreakdownvoltage•LowgatechargeQG•IGBTcopackedwithRAPID1fastandsoftantiparalleldiode•Maximumjunctiontemperature175°C•QualifiedaccordingtoJEDECfortargetapplications•Pb-freeleadplating;RoHScompliant•CompleteproductspectrumandPSpiceModels:http://www.infineon.com/igbt/

Applications:

•Solarconverters•Uninterruptiblepowersupplies•Weldingconverters•Midtohighrangeswitchingfrequencyconverters

Packagepindefinition:

•Pin1-gate•Pin2&backside-collector•Pin3-emitter

G

C

E

12

3

KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageIKP40N65H5 650V 40A 1.65V 175°C K40EH5 PG-TO220-3

IKW40N65H5 650V 40A 1.65V 175°C K40EH5 PG-TO247-3

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Rev.2.1,2015-05-06

TableofContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Package Drawing PG-TO220-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Package Drawing PG-TO247-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18

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Rev.2.1,2015-05-06

MaximumRatingsForoptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value UnitCollector-emittervoltage,Tvj≥25°C VCE 650 V

DCcollectorcurrent,limitedbyTvjmaxTC=25°CTC=100°C

IC 74.046.0

A

Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 120.0 A

Turn off safe operating areaVCE≤650V,Tvj≤175°C,tp=1µs - 120.0 A

Diodeforwardcurrent,limitedbyTvjmaxTC=25°CTC=100°C

IF 36.021.0

A

Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 120.0 A

Gate-emitter voltageTransientGate-emittervoltage(tp≤10µs,D<0.010) VGE

±20±30 V

PowerdissipationTC=25°CPowerdissipationTC=100°C Ptot

250.0125.0 W

Operating junction temperature Tvj -40...+175 °C

Storage temperature Tstg -55...+150 °C

Soldering temperature,wave soldering 1.6mm (0.063in.) from case for 10s PG-TO220-3

PG-TO247-3260260

°C

Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm

ThermalResistance

Parameter Symbol Conditions Max.Value UnitCharacteristic

IGBT thermal resistance,junction - case Rth(j-c) 0.60 K/W

Diode thermal resistance,junction - case Rth(j-c) 1.80 K/W

Thermal resistancejunction - ambient Rth(j-a)

PG-TO220-3PG-TO247-3

6240 K/W

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Rev.2.1,2015-05-06

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.

Parameter Symbol Conditions Unit

StaticCharacteristic

Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V

Collector-emitter saturation voltage VCEsat

VGE=15.0V,IC=40.0ATvj=25°CTvj=125°CTvj=175°C

---

1.651.851.95

2.10--

V

Diode forward voltage VF

VGE=0V,IF=20.0ATvj=25°CTvj=125°CTvj=175°C

---

1.451.401.40

1.80--

V

Gate-emitter threshold voltage VGE(th) IC=0.40mA,VCE=VGE 3.2 4.0 4.8 V

Zero gate voltage collector current ICESVCE=650V,VGE=0VTvj=25°CTvj=175°C

--

--

40.04000.0

µA

Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA

Transconductance gfs VCE=20V,IC=40.0A - 50.0 - S

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.


DynamicCharacteristic

Input capacitance Cies - 2500 -

Output capacitance Coes - 50 -

Reverse transfer capacitance Cres - 9 -

VCE=25V,VGE=0V,f=1MHz pF

Gate charge QGVCC=520V,IC=40.0A,VGE=15V - 95.0 - nC

Internal emitter inductancemeasured 5mm (0.197 in.) fromcase

LE PG-TO220-3PG-TO247-3 - 7.0

13.0 - nH

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=25°CTurn-on delay time td(on) - 22 - ns

Rise time tr - 12 - ns

Turn-off delay time td(off) - 165 - ns

Fall time tf - 13 - ns

Turn-on energy Eon - 0.39 - mJ

Turn-off energy Eoff - 0.12 - mJ

Total switching energy Ets - 0.51 - mJ

Tvj=25°C,VCC=400V,IC=20.0A,VGE=0.0/15.0V,RG(on)=15.0Ω,RG(off)=15.0Ω,Lσ=30nH,Cσ=30pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.

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Rev.2.1,2015-05-06

Turn-on delay time td(on) - 19 - ns








DiodeCharacteristic,atTvj=25°C

Diode reverse recovery time trr - 62 - ns

Diode reverse recovery charge Qrr - 0.45 - µC

Diode peak reverse recovery current Irrm - 12.5 - A

Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -290 - A/µs

Tvj=25°C,VR=400V,IF=20.0A,diF/dt=1000A/µs






SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=150°CTurn-on delay time td(on) - 20 - ns








Turn-on delay time td(on) - 19 - ns








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Rev.2.1,2015-05-06

DiodeCharacteristic,atTvj=150°C











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Rev.2.1,2015-05-06

Figure 1. Forwardbiassafeoperatingarea(D=0,TC=25°C,Tvj≤175°C;VGE=15V.RecommendeduseatVGE≥7.5V)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

IC,C

OLLECTO

RCURRENT[A]

1 10 100 10000.1

1

10

100

tp=1µs

10µs

50µs

100µs

200µs

500µs

DC

Figure 2. Powerdissipationasafunctionofcasetemperature(Tvj≤175°C)

TC,CASETEMPERATURE[°C]

Ptot ,POWERDISSIPATION[W

]

25 50 75 100 125 150 1750

25

50

75

100

125

150

175

200

225

250

275

Figure 3. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tvj≤175°C)

TC,CASETEMPERATURE[°C]

IC,C

OLLECTO

RCURRENT[A]

25 50 75 100 125 150 1750

10

20

30

40

50

60

70

80

Figure 4. Typicaloutputcharacteristic(Tvj=25°C)


IC,C

OLLECTO

RCURRENT[A]

0 1 2 3 4 50

20

40

60

80

100

120

VGE=20V

18V

15V

12V

10V

8V

7V

6V

5V

9


Rev.2.1,2015-05-06

Figure 5. Typicaloutputcharacteristic(Tvj=150°C)


IC,C

OLLECTO

RCURRENT[A]

0 1 2 3 4 50

20

40

60

80

100

120

VGE=20V

18V

15V

12V

10V

8V

7V

6V

5V

Figure 6. Typicaltransfercharacteristic(VCE=20V)

VGE,GATE-EMITTERVOLTAGE[V]

IC,C

OLLECTO

RCURRENT[A]

4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.50

20

40

60

80

100

120Tj=25°CTj=150°C

Figure 7. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)

Tvj,JUNCTIONTEMPERATURE[°C]

VCEsat ,COLLECTO

R-EMITTE

RSATU

RATION[V

]

0 25 50 75 100 125 150 1750.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50IC=10AIC=20AIC=40A

Figure 8. Typicalswitchingtimesasafunctionofcollectorcurrent(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,rG=15Ω,DynamictestcircuitinFigure E)

IC,COLLECTORCURRENT[A]

t,SWITCHINGTIMES[ns]

0 20 40 60 80 100 1201

10

100

1000td(off)

tftd(on)

tr

10


Rev.2.1,2015-05-06

Figure 9. Typicalswitchingtimesasafunctionofgateresistor(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,IC=20A,DynamictestcircuitinFigure E)

rG,GATERESISTOR[Ω]


5 15 25 35 45 55 65 75 851

10

100

1000td(off)

tftd(on)

tr

Figure 10. Typicalswitchingtimesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=15/0V,IC=20A,rG=15Ω,DynamictestcircuitinFigure E)



25 50 75 100 125 150 1751

10

100

1000td(off)

tftd(on)

tr

Figure 11. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=0.4mA)


VGE(th) ,GATE

-EMITTE

RTHRESHOLD

VOLTAGE[V

]

0 25 50 75 100 125 1501.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5typ.min.max.

Figure 12. Typicalswitchingenergylossesasafunctionofcollectorcurrent(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,rG=15Ω,DynamictestcircuitinFigure E)

IC,COLLECTORCURRENT[A]

E,S

WITCHINGENERGYLOSSES[m

J]

0 20 40 60 80 100 1200

1

2

3

4

5

6

7

8Eoff

Eon

Ets

11


Rev.2.1,2015-05-06

Figure 13. Typicalswitchingenergylossesasafunctionofgateresistor(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,IC=20A,DynamictestcircuitinFigure E)

rG,GATERESISTOR[Ω]

E,S


J]

5 15 25 35 45 55 65 75 850.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6Eoff

Eon

Ets

Figure 14. Typicalswitchingenergylossesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=15/0V,IC=20A,rG=15Ω,DynamictestcircuitinFigure E)


E,S


J]

25 50 75 100 125 150 1750.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8Eoff

Eon

Ets

Figure 15. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(inductiveload,Tvj=150°C,VGE=15/0V,IC=20A,rG=15Ω,DynamictestcircuitinFigure E)


E,S


J]

200 250 300 350 400 450 5000.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0Eoff

Eon

Ets

Figure 16. Typicalgatecharge(IC=40A)

QGE,GATECHARGE[nC]

VGE,G

ATE

-EMITTE

RVOLTAGE[V

]

0 20 40 60 80 1000

2

4

6

8

10

12

14

16130V520V

12


Rev.2.1,2015-05-06

Figure 17. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)


C,C

APACITANCE[pF]

0 5 10 15 20 25 301

10

100

1000

1E+4Cies

Coes

Cres

Figure 18. IGBTtransientthermalresistance(D=tp/T)

tp,PULSEWIDTH[s]

Zth(j -c

) ,TR

ANSIENTTH

ERMALRESISTA

NCE[K

/W]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.082454847.3E-5

20.1441977.0E-4

30.21517740.01235548

40.15817080.08020881

Figure 19. Diodetransientthermalimpedanceasafunctionofpulsewidth(D=tp/T)

tp,PULSEWIDTH[s]

Zth(j -c

) ,TR

ANSIENTTH

ERMALRESISTA

NCE[K

/W]

1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.67015843.4E-4

20.7757594.7E-3

30.35408260.04680901

Figure 20. Typicalreverserecoverytimeasafunctionofdiodecurrentslope(VR=400V)

diF/dt,DIODECURRENTSLOPE[A/µs]

trr,R

EVERSERECOVERYTIME[ns]

500 700 900 1100 1300 150040

50

60

70

80

90

100

110

120

130Tj=25°C, IF = 20ATj=150°C, IF = 20A

13


Rev.2.1,2015-05-06

Figure 21. Typicalreverserecoverychargeasafunctionofdiodecurrentslope(VR=400V)


Qrr,R

EVERSERECOVERYCHARGE[µC]

500 700 900 1100 1300 15000.2

0.4

0.6

0.8

1.0

1.2Tj=25°C, IF = 20ATj=150°C, IF = 20A

Figure 22. Typicalreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V)


Irr,R

EVERSERECOVERYCURRENT[A]

500 700 900 1100 1300 15005

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20Tj=25°C, IF = 20ATj=150°C, IF = 20A

Figure 23. Typicaldiodepeakrateoffallofreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V)


dIrr/dt,diodepeakrateoffallofI

rr[A

/µs]

500 700 900 1100 1300 1500-400

-350

-300

-250

-200

-150

-100

-50

0Tj=25°C, IF = 20ATj=150°C, IF = 20A

Figure 24. Typicaldiodeforwardcurrentasafunctionofforwardvoltage

VF,FORWARDVOLTAGE[V]

IF ,FORWARDCURRENT[A]

0.0 0.5 1.0 1.5 2.0 2.5 3.00

10

20

30

40

50

60Tj=25°CTj=150°C

14


Rev.2.1,2015-05-06

Figure 25. Typicaldiodeforwardvoltageasafunctionofjunctiontemperature


VF ,FO

RWARDVOLTAGE[V

]

25 50 75 100 125 150 1750.8

1.0

1.2

1.4

1.6

1.8

2.0IF=10AIF=20AIF=40A

15


Rev.2.1,2015-05-06

Package Drawing PG-TO220-3

16


Rev.2.1,2015-05-06

Package Drawing PG-TO247-3

17


Rev.2.1,2015-05-06

t

a b

td(off)

tf t

rtd(on)

90% IC

10% IC

90% IC

10% VGE

10% IC

t

90% VGE

t

t

90% VGE

VGE

(t)

t

t

tt1 t

4

2% IC

10% VGE

2% VCE

t2

t3

E

t

t

V I toff

= x x d

1

2

CE CE

t

t

V I ton

= x x d

3

4

CE C

CC

dI /dtF

dI

I,V

Figure A.

Figure B.

Figure C. Definition of diode switchingcharacteristics

Figure E. Dynamic test circuit

Figure D.

I (t)C

Parasitic inductance L ,

parasitic capacitor C ,

relief capacitor C ,

(only for ZVT switching)

s

s

r

t t t

Q Q Qrr a b

rr a b

= +

= +

Qa Qb

V (t)CE

VGE

(t)

I (t)C

V (t)CE

Testing Conditions

18


Rev.2.1,2015-05-06

RevisionHistory

IKP40N65H5, IKW40N65H5

Revision:2015-05-06,Rev.2.1Previous Revision

Revision Date Subjects (major changes since last revision)

1.1 2012-11-09 Preliminary data sheet

1.2 2013-12-18 New Marking Pattern

1.3 2014-12-04 Minor changes Fig.1, Fig.14 and typ. Eoff at 150°C = 0.22mJ

2.1 2015-05-06 Final data sheet

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PublishedbyInfineonTechnologiesAG81726Munich,Germany81726München,Germany©2015InfineonTechnologiesAGAllRightsReserved.

LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

InformationForfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineonTechnologiesOffice(www.infineon.com).

WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

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Datasheet IK#40N65H5 - Infineon Technologies