Datasheet IPI029N06N - Infineon Technologies

1

IPI029N06N

Rev.2.5,2017-09-27Final Data Sheet

12 3

tab

I²-PAK

DrainPin 2, Tab

GatePin 1

SourcePin 3

MOSFETOptiMOSTMPower-Transistor,60V

Features•OptimizedforhighperformanceSMPS,e.g.sync.rec.•100%avalanchetested•Superiorthermalresistance•N-channel•QualifiedaccordingtoJEDEC1)fortargetapplications•Pb-freeleadplating;RoHScompliant•Halogen-freeaccordingtoIEC61249-2-21

Table1KeyPerformanceParametersParameter Value UnitVDS 60 V

RDS(on),max 2.9 mΩ

ID 136 A

Qoss 65 nC

Qg(0V..10V) 56 nC

Type/OrderingCode Package Marking RelatedLinksIPI029N06N PG-TO 262-3 029N06N -

1) J-STD20 and JESD22

2

OptiMOSTMPower-Transistor,60VIPI029N06N


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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1MaximumratingsatTA=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current ID---

---

13610529

AVGS=10V,TC=25°CVGS=10V,TC=100°CVGS=10V,TA=25°C,RthJA=50K/W

Pulsed drain current1) ID,pulse - - 544 A TC=25°CAvalanche energy, single pulse2) EAS - - 110 mJ ID=100A,RGS=25ΩGate source voltage VGS -20 - 20 V -

Power dissipation Ptot--

--

1363.0 W TC=25°C

TA=25°C,RthJA=50K/W

Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category;DIN IEC 68-1: 55/175/56

2Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction - case,bottom RthJC - 0.7 1.1 K/W -

Device on PCB,minimal footprint RthJA - - 62 - -

Device on PCB,6 cm² cooling area3) RthJA - - 40 - -

Soldering temperature, wave andreflow soldering are allowed Tsold - - 260 °C Reflow MSL1

1) See Diagram 3 for more detailed information2) See Diagram 13 for more detailed information3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.PCB is vertical in still air.

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3Electricalcharacteristics

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 60 - - V VGS=0V,ID=1mAGate threshold voltage VGS(th) 2.1 2.8 3.3 V VDS=VGS,ID=75µA

Zero gate voltage drain current IDSS --

0.510

1100 µA VDS=60V,VGS=0V,Tj=25°C

VDS=60V,VGS=0V,Tj=125°C

Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

2.73.3

2.94.4 mΩ VGS=10V,ID=100A

VGS=6V,ID=25A

Gate resistance1) RG - 1.3 1.95 Ω -

Transconductance gfs 80 160 - S |VDS|>2|ID|RDS(on)max,ID=100A

Table5Dynamiccharacteristics1)Values


Input capacitance Ciss - 4100 5125 pF VGS=0V,VDS=30V,f=1MHzOutput capacitance Coss - 980 1225 pF VGS=0V,VDS=30V,f=1MHzReverse transfer capacitance Crss - 39 78 pF VGS=0V,VDS=30V,f=1MHz

Turn-on delay time td(on) - 17 - ns VDD=30V,VGS=10V,ID=100A,RG,ext,ext=3Ω

Rise time tr - 15 - ns VDD=30V,VGS=10V,ID=100A,RG,ext,ext=3Ω

Turn-off delay time td(off) - 30 - ns VDD=30V,VGS=10V,ID=100A,RG,ext,ext=3Ω

Fall time tf - 8 - ns VDD=30V,VGS=10V,ID=100A,RG,ext,ext=3Ω

Table6Gatechargecharacteristics2)Values


Gate to source charge Qgs - 20 - nC VDD=30V,ID=100A,VGS=0to10VGate charge at threshold Qg(th) - 11 - nC VDD=30V,ID=100A,VGS=0to10VGate to drain charge1) Qgd - 11 15 nC VDD=30V,ID=100A,VGS=0to10VSwitching charge Qsw - 19 - nC VDD=30V,ID=100A,VGS=0to10VGate charge total1) Qg - 56 66 nC VDD=30V,ID=100A,VGS=0to10VGate plateau voltage Vplateau - 4.8 - V VDD=30V,ID=100A,VGS=0to10VGate charge total, sync. FET Qg(sync) - 49 - nC VDS=0.1V,VGS=0to10VOutput charge1) Qoss - 65 82 nC VDD=30V,VGS=0V

1) Defined by design. Not subject to production test2) See ″Gate charge waveforms″ for parameter definition

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Table7ReversediodeValues


Diode continuous forward current IS - - 108 A TC=25°CDiode pulse current IS,pulse - - 544 A TC=25°CDiode forward voltage VSD - 1.0 1.2 V VGS=0V,IF=100A,Tj=25°CReverse recovery time1) trr - 54 86 ns VR=30V,IF=100A,diF/dt=100A/µsReverse recovery charge Qrr - 77 - nC VR=30V,IF=100A,diF/dt=100A/µs

1) Defined by design. Not subject to production test

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4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 150 175 2000

20

40

60

80

100

120

140

160

Ptot=f(TC)

Diagram2:Draincurrent

TC[°C]

ID[A

]

0 25 50 75 100 125 150 175 2000

20

40

60

80

100

120

140

ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

10-1 100 101 10210-1

100

101

102

103

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-110-2

10-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tp);parameter:D=tp/T

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Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0.0 0.5 1.0 1.5 2.0 2.5 3.00

40

80

120

160

200

240

280

320

360

4007 V10 V

6 V

5.5 V

5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.drain-sourceonresistance

ID[A]

RDS(on

) [m

Ω]

0 80 160 240 320 4000

1

2

3

4

5

6

7

8

5 V 5.5 V 6 V

7 V

10 V

RDS(on)=f(ID);Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 80

40

80

120

160

200

240

280

320

360

400

175 °C25 °C

ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj

Diagram8:Typ.forwardtransconductance

ID[A]

gfs [S]

0 20 40 60 80 1000

50

100

150

200

gfs=f(ID);Tj=25°C

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Diagram9:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [m

Ω]

-60 -20 20 60 100 140 1800.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

max

typ

RDS(on)=f(Tj);ID=100A;VGS=10V

Diagram10:Typ.gatethresholdvoltage

Tj[°C]

VGS(th) [V]

-60 -20 20 60 100 140 1800

1

2

3

4

5

750 µA

75 µA

VGS(th)=f(Tj);VGS=VDS

Diagram11:Typ.capacitances

VDS[V]

C[p

F]

0 20 40 60101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=1MHz

Diagram12:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.5 2.0100

101

102

103

175 °C 25 °C

IF=f(VSD);parameter:Tj

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Diagram13:Avalanchecharacteristics

tAV[µs]

IAV [A]

100 101 102 103100

101

102

103

25 °C

100 °C

125 °C

IAS=f(tAV);RGS=25Ω;parameter:Tj(start)

Diagram14:Typ.gatecharge

Qgate[nC]

VGS [V]

0 10 20 30 40 50 600

2

4

6

8

10

12

12 V

30 V

48 V

VGS=f(Qgate);ID=100Apulsed;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-60 -20 20 60 100 140 18050

54

58

62

66

70

VBR(DSS)=f(Tj);ID=1mA

Gate charge waveforms

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5PackageOutlines

Figure1OutlinePG-TO262-3,dimensionsinmm/inches

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RevisionHistoryIPI029N06N

Revision:2017-09-27,Rev.2.5

Previous Revision

Revision Date Subjects (major changes since last revision)

2.4 2014-10-16 Rev.2.4

2.5 2017-09-27 Update product current

TrademarksofInfineonTechnologiesAG

AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.

TrademarksupdatedAugust2015

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Datasheet IPI029N06N - Infineon Technologies