All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: Power MOSFET (Model Parameter) PART NUMBER: 2SK3869 MANUFACTURER: TOSHIBA Body Diode (Model Parameter) / ESD Protection Diode

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

Circuit Configuration

2SK3869

MOSFET MODEL

Pspice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Modility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility

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Transconductance Characteristic

Circuit Simulation Result

Comparison table

Id(A) gfs

Error(%) Measurement Simulation

0.100 0.900 0.911 1.222

0.200 1.250 1.285 2.816

0.500 2.000 2.014 0.690

1.000 2.750 2.824 2.695

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V1

0Vdc

U3

2SK3869

V2

20Vdc

0

V3

0Vdc

V_V1

0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V

I(V3)

0A

2A

4A

6A

8A

10A

12A

14A

16A

18A

20A

Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit

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Comparison Graph Circuit Simulation Result

Simulation Result

ID(A) VGS(V)

Error (%) Measurement Simulation

0.500 4.400 4.473 1.659

1.000 4.600 4.685 1.848

2.000 4.950 4.987 0.747

5.000 5.550 5.598 0.865

10.000 6.250 6.306 0.896

15.000 6.800 6.862 0.912

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VDS

0Vdc

VGS

10Vdc

U6

2SK3869

V2

0Vdc

0

V_VDS

0V 1.0V 2.0V 3.0V 4.0V 5.0V

I(V2)

0A

1.0A

2.0A

3.0A

4.0A

5.0A

Rds(on) Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

ID=5A, VGS=10V Measurement Simulation Error (%)

RDS (on) 0.550 0.550 0.000

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0

-

+W1

ION = 0uAIOFF = 1mAW

TD = 0TF = 10n

PW = 600uPER = 1000u

I1 = 0I2 = 1mTR = 10n

V1

360

I2

10DbreakD2

U9 2SK3869

Time*1mA

0 8n 16n 24n 32n 40n

V(W1:2)

0V

4V

8V

12V

16V

20V

Gate Charge Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

VDD=360V,ID= 10A ,VGS=10V

Measurement Simulation Error (%)

Qgs 8 nC 7.973 nC -0.337

Qgd 12 nC 12.02 nC 0.225

Qg 28 nC 25.67 nC -8.300

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Capacitance Characteristic

Simulation Result

VDS(V) Cbd(pF)

Error(%) Measurement Simulation

0.100 1500.000 1490.000 -0.666

0.200 1300.000 1320.000 1.538

0.500 1150.000 1100.000 -4.347

1.000 800.000 810.000 1.250

2.000 600.000 600.000 0.000

5.000 350.000 355.000 1.428

10.000 270.000 280.000 3.703

20.000 108.000 103.000 -4.629

50.000 76.000 75.000 -1.315

100.000 53.000 54.000 1.886

Simulation

Measurement

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R2

50

0

RL

16

V2

TD = 2u

TF = 7nPW = 100uPER = 200u

V1 = 0

TR = 6n

V2 = 20

L2

50n

L1

30nH

R1

50

3

VDD

200Vdc

2

U2

2SK3869

Time

1.6us 1.8us 2.0us 2.2us 2.4us

V(2) V(3)/20

0V

2V

4V

6V

8V

10V

12V

Switching Time Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

ID= 5A, VDD= 200V VGS=0/10V

Measurement Simulation Error(%)

ton 60.000 ns 60.046 ns 0.0766

VGS

ID

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U10

2SK3869

V3

0Vdc

0

V2

0

V1

0

V_V2

0V 10V 20V 30V 40V 50V

I(V3)

0A

4A

8A

12A

16A

20A

Output Characteristic

Circuit Simulation result

Evaluation circuit

VGS= 4.5V

5.5V

6 V

6.25 V

6.5 V

6.75 V

10

15

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U4

2SK3869

0

R1

0.01m

V1

0Vdc

V_V1

0V 0.5V 1.0V 1.5V 2.0V

I(R1)

100mA

1.0A

10A

BODY DIODE SPICE MODEL

Forward Current Characteristic

Circuit Simulation Result

Evaluation Circuit

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Comparison Graph Circuit Simulation Result

Simulation Result

IDR(A) VDS(V)

Measurement VDS(V)

Simulation %Error

0.100 0.640 0.641 0.156

0.200 0.670 0.663 -1.045

0.500 0.70 0.698 -0.286

1.000 0.720 0.730 1.389

2.000 0.780 0.775 -0.641

5.000 0.870 0.863 -0.805

10.000 0.980 0.971 -0.918

20.000 1.160 1.150 -0.862

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Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation

Measurement Simulation Error (%)

trj 1.20 us 1.207 us 0.608

trb 1.12 us 0.1609 us -85.633

trr 2.32 us 1.368 us -41.025

V21

TD = 1.8uTF = 10n

PW = 20uPER = 50u

V1 = -9.40

TR = 10n

V2 = 10.68

0

U8 2SK3869

N07543

RL21

50

Time

14us 16us 18us 20us 22us 24us 26us 28us 30us 32us

I(RL21)

-400mA

0A

400mA

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Reverse Recovery Characteristic Reference

Trj=1.20(us) Trb=1.12(us) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example

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ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic

Circuit Simulation Result

Evaluation Circuit

V_V1

0V 10V 20V 30V 40V 50V 60V 70V 80V 90V

I(R1)

0A

1mA

2mA

3mA

4mA

5mA

6mA

7mA

8mA

9mA

10mA

0

OpenR1

0.01m

U5

2SK3869

V1

0Vdc

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Zener Voltage Characteristic Reference