SPICE MODEL of 2SK2409 (Professional+BDP Model) in SPICE PARK

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: MOSFET (Professional Model) PART NUMBER: 2SK2409 MANUFACTURER: NEC Corporation REMARK: Body Diode (Professional) / ESD Protection Diode


MOSFET MODEL PARAMETERS

PSpice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Mobility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility


Transconductance Characteristics

Circuit Simulation Result

0

5

10

15

20

25

30

0 2 4 6 8 10 12

Drain Curent -Id (A)

Tra

nsco

nd

ucta

nce -

Gfs

(s)

Measurement

Simulation

Comparison table

Id(A) gfs(s)

Error(%) Measurement Simulation

1.000 7.813 7.874 0.787

2.000 10.811 10.811 0.000

5.000 16.835 16.077 -4.502

10.000 22.222 21.231 -4.459


V_VGS

0V 2V 4V 6V 8V 10V

I(V2)

100mA

1.0A

10A

100A

1.0KA

Vgs-Id Characteristics


Evaluation circuit

0

V2

VDD10Vdc

U12sk2409

VGS0Vdc

0 0


0.1

1

10

100

1000

0 5 10

Gate to Source Voltage - VGS (V)

Dra

in C

urr

en

t -

ID (

A)

Measurement

Simulation

Comparison Graph Circuit Simulation Result

Comparison table

ID(A) VGS(V)

Error (%) Measurement Simulation

1.000 2.000 1.994 -0.300

2.000 2.080 2.103 1.106

5.000 2.350 2.392 1.787

10.000 2.620 2.601 -0.725

20.000 3.000 3.014 0.467

50.000 3.850 3.935 2.208

100.000 5.180 5.000 -3.475


V_VDD

0V 0.2V 0.4V 0.6V 0.8V 1.0V

I(V2)

0A

2A

4A

6A

8A

10A

12A

14A

16A

18A

20A

*Rds(on) Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

ID=20A, VGS=10V Measurement Simulation Error (%)

RDS (on) 22 m 22.022 m 0.100

0

VGS10Vdc

0

U12sk2409

VDD10Vdc

V2

0


Time

0s 20us 40us 60us 80us 100us

V(W1:3)

0V

2V

4V

6V

8V

10V

Gate Charge Characteristic


Evaluation circuit

Simulation Result

VDD=48V,ID=40A ,VGS=-10V

Measurement Simulation Error (%)

Qgs 5.00 nC 5.22 nC 4.400

Qgd 25.00 nC 25.00 nC 0.640

Qg 7.30 nC 7.31 nC 0.137

0

I2

Vsense

DbreakD1

I1

40Adc

-

+W1

ION = 0AIOFF = 1.1mA

W VD48Vdc

U12SK2409


Capacitance Characteristic

Simulation Result

VDS(V) Cbd(pF)

Error(%) Measurement Simulation

1 1550 1500 0.065

2 1340 1320 0.075

5 1020 1030 0.098

10 770 775 0.130

20 560 550 0.179

50 350 340 0.286

Simulation

Measurement


Time

0.8us 1.0us 1.2us 1.4us 1.6us

V(L3:2) I(Vsense)/2

0V

1V

2V

3V

4V

5V

6V

7V

8V

9V

10V

11V

12V

13V

14V

Switching Time Characteristic Circuit Simulation result

Evaluation circuit

Simulation Result

ID=20A, VDD=30V VGS=0/10V

Measurement Simulation Error(%)

td(on) 30 ns 30.01 ns 0.063

VGS

ID

U12sk2409

RL

1.5

L3

30nH

2

Vsense

0

3

VD30.5Vdc

V1

TD = 1u

TF = 10n

PW = 5u

PER = 10u

V1 = 0

TR = 10n

V2 = 10R1

10


V_VDD

0V 2V 4V 6V 8V 10V 12V 14V 16V

I(V2)

0A

20A

40A

60A

80A

100A

Output Characteristic


Evaluation circuit

6.0V

10.0V

4.0V

U12sk2409

VDS10Vdc

0

V2

VGS10Vdc

0


V_VDS

0V 1.0V 2.0V 3.0V

I(V2)

100mA

1.0A

10A

100A

1.0KA

BODY DIODE SPICE MODEL Forward Current Characteristic


Evaluation Circuit

VDS

0Vdc

V2

VGS0Vdc

0

U12sk2409


0

1

10

100

1000

0 1 2 3

VDS-Source to Drain Voltage-V

IS

D-D

iod

e F

orw

ard

Cu

rren

t -

AMeasurement

Simulation

Comparison Graph Circuit Simulation Result

Simulation Result

ISD(A)

VDS(V)

%Error Measurement Simulation

1.000 0.675 0.675 0.000

2.000 0.705 0.704 -0.142

5.000 0.770 0.758 -1.558

10.000 0.830 0.823 -0.843

20.000 0.940 0.927 -1.383

50.000 1.250 1.202 -3.840

100.000 1.700 1.630 -4.118

170.000 2.300 2.155 -6.304


Time

5.5us 5.7us 5.9us 6.1us 6.3us 6.5us

I(R1)

-400mA

-300mA

-200mA

-100mA

-0mA

100mA

200mA

300mA

400mA

Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation

Measurement Simulation Error (%)

trj 57.200 ns 56.710 ns -0.857

trb 152.000 ns 151.360 ns -0.421

trr 209.200 ns 208.070 ns -0.540

R1

50

0

U1

D2SK2409_PRO

V1TD = 78n

TF = 10n

PW = 5.7u

PER = 100us

V1 = -9.5V

TR = 10n

V2 = 10.6


Reverse Recovery Characteristic Reference

Trj=57.2(ns) Trb=152(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example


V_VGS

0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V

I(V2)

0A

0.1mA

0.2mA

0.3mA

0.4mA

0.5mA

0.6mA

0.7mA

0.8mA

0.9mA

1.0mA

ESD PROTECTION DIODE SPICE MODEL

Zener Voltage Characteristic


Evaluation Circuit

U12SK2409

V2

VGS0Vdc

ID

0Adc

0


Zener Voltage Characteristic Reference

Technology

SPICE MODEL of 2SK2409 (Professional+BDP Model) in SPICE PARK