All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: Power MOSFET (Professional) PART NUMBER: SSM5H08TU MANUFACTURER: TOSHIBA Body Diode (Standard) / ESD Protection Diode Schottky Barrier Diode (Professional)

All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

MOSFET MODEL

Pspice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Modility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility

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Transconductance Characteristic Circuit Simulation Result

Comparison table

ID(A) gfs

Error (%) Measurement Simulation

0.50 2.40 2.39 -0.46

1.00 3.37 3.34 -0.92

2.00 4.70 4.64 -1.19

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V_V1

0V 1.0V 2.0V 3.0V 4.0V

I(V2)

10uA

100uA

1.0mA

10mA

100mA

1.0A

10A

Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit

R1

100M EG

V33Vdc

OPEN

OPEN

0

OPEN

V110Vdc

V2

0Vdc

0

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Comparison Graph Circuit Simulation Result

Simulation Result

ID(A) VGS(V)

Error (%) Measurement Simulation

0.01 1.13 1.14 0.80

0.02 1.16 1.17 0.69

0.05 1.20 1.21 0.83

0.10 1.26 1.27 0.79

0.20 1.35 1.35 0.00

0.50 1.49 1.50 0.67

1.00 1.67 1.68 0.60

2.00 1.92 1.94 1.04

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OPEN

R1

100MEG

OPEN

0

U1

SSM5H08TU

VD10Vdc

VG2.5Vdc

0

V1

0Vdc

OPEN

Id-Rds(on) Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

ID=0.756A, VGS=2.5V Measurement Simulation Error (%)

RDS (on) 164.88 m 164.88 m 0.00

( VDS(V), Id(A) )

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Id-Rds(on) Characteristic Reference

ID =

VDS =

VGS =

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Gate Charge Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

VDD=10V,ID=1.5A Measurement Simulation Error (%)

Qgs 0.250 nC 0.252 nC 0.800

Qgd 0.565 nC 0.568 nC 0.531

Qg 3.100 nC 3.100 nC 0.000

open

I21.5Adc

U4SSM5H08TU

Open

D1

DbreakOpen

I1

TD = 0

TF = 10nPW = 600uPER = 1000u

I1 = 0

I2 = 1m

TR = 10n

0

-

+W1

ION = 0uAIOFF = 1mAW

RS

100MEG

V110Vdc

0

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Capacitance Characteristic

Simulation Result

VDS(V) Cbd(pF)

Error(%) Measurement Simulation

0.10 109.00 109.80 0.73

0.20 104.00 104.70 0.67

0.50 94.00 93.62 -0.40

1.00 80.00 80.23 0.29

2.00 63.00 64.13 1.79

5.00 43.00 43.04 0.09

10.00 30.00 30.11 0.37

20.00 20.00 20.25 1.25

Simulation

Measurement

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Time

4.97us 4.99us 5.01us 5.03us 5.05us 5.07us

V(2)*4 V(3)

0V

4V

8V

12V

RL

13.35

L2

0

R1

4.7

0

V1

TD = 5u

TF = 7nPW = 5uPER = 100u

V1 = 0

TR = 6n

V2 = 5

U10

SSM5H08TU

2

3L1

0.03uH

R2

4.7

V3

0Vdc

VDD

10

0

OPEN

0

OPEN

Switching Time Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

ID=0.75A, VDD=10V VGS=2.5V

Measurement Simulation Error(%)

ton 15.50 ns 15.57 ns 0.45

VGS

ID

Vg = 0/2.5V

VDD = 10V

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Output Characteristic

Circuit Simulation result

Evaluation circuit

VGS=1.8V

2.4V

2.0V

2.2V

R1

100MEG

OPEN

0

V12.5Vdc

OPEN

0

OPEN

V2

0Vdc

V33Vdc

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Output Characteristic Reference

VGS=1.8V

2.4V

2V

2.2V

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Body Diode Model

Pspice model parameter

Model description

IS Saturation Current

N Emission Coefficient

RS Series Resistance

IKF High-injection Knee Current

CJO Zero-bias Junction Capacitance

M Junction Grading Coefficient

VJ Junction Potential

ISR Recombination Current Saturation Value

BV Reverse Breakdown Voltage(a positive value)

IBV Reverse Breakdown Current(a positive value)

TT Transit Time

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Forward Current Characteristic

Circuit Simulation Result

Evaluation Circuit

open

R1

0.01m

Open

0

U5SSM5H08TU

Open

RS

100MEG

0

VD

0Vdc

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Comparison Graph Circuit Simulation Result

Simulation Result

Ifwd(A) Vfwd(V)

Measurement Vfwd(V)

Simulation %Error

0.010 0.587 0.591 0.681

0.020 0.605 0.604 -0.165

0.050 0.625 0.623 -0.320

0.100 0.637 0.639 0.314

0.200 0.660 0.659 -0.152

0.500 0.690 0.689 -0.145

1.000 0.710 0.713 0.423

2.000 0.739 0.737 -0.271

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Forward Current Characteristic Reference

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Reverse Recovery Characteristic

Circuit Simulation Result

Evaluation circuit

Compare Measurement vs. Simulation

Trr Measurement Simulation Error(%)

Trj+Trb 11.6 ns 11.594 ns -0.05172

Open

R1

50Open

V1

TD = 0

TF = 10nsPW = 1usPER = 100us

V1 = -9.4v

TR = 10ns

V2 = 10.6v RS

100MEG

U5SSM5H08TU

open

0

0

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Reverse Recovery Characteristic Reference

trj=6.4(ns) trb=5.2(ns) Conditions:Ifwd=Irev=0.2(A),Rl=50

Relation between trj and trb

Measurement

Example

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OPEN

V1

0Vdc

OPEN

OPEN

U1

SSM5H08TU

0

R2

0.01mR1

100MEG

OPEN

0

Zener Voltage Characteristic

Circuit Simulation Result

Evaluation Circuit

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Zener Voltage Characteristic Reference

All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

Forward Current Characteristic

Circuit Simulation Result

Evaluation Circuit

open

R1

0.01m

RS

100MEG

open

V10Vdc

open 0

0

U1

SSM5H08TU

open

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Comparison Graph Circuit Simulation Result

Simulation Result

Ifwd (A)

Vfwd (V)

%Error Measurement Simulation

0.001 0.130 0.138 6.154

0.002 0.155 0.157 1.290

0.005 0.185 0.182 -1.622

0.011 0.208 0.203 -2.404

0.022 0.231 0.228 -1.299

0.052 0.260 0.257 -1.154

0.104 0.290 0.290 0.000

0.202 0.337 0.336 -0.297

0.499 0.427 0.427 0.000

All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

Forward Current Characteristic Reference

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Junction Capacitance Characteristic Circuit Simulation Result

Evaluation Circuit

open

V1

TD = 0

TF = 10nsPW = 50usPER = 10us

V1 = 0

TR = 1us

V2 = 10

RS

100MEG

open

open

0

0

open

U1

SSM5H08TU

V2

0Vdc

All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

Comparison Graph Circuit Simulation Result

Simulation Result

Vrev(V)

Cj(pF)

%Error Measurement Simulation

0.010 48.000 47.844 -0.325

0.020 47.000 47.377 0.802

0.050 45.500 45.864 0.800

0.100 43.000 43.573 1.333

0.200 39.000 39.690 1.769

0.500 32.000 32.453 1.416

1.000 25.000 26.085 4.340

2.000 20.000 20.018 0.090

5.000 13.000 13.457 3.515

10.000 9.500 9.841 3.589

All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

Reverse Characteristic Circuit Simulation Result

Evaluation Circuit

open

U1

SSM5H08TU

open

open

0

V1

0Vdcopen

0

RL

0.1m

RS

100MEG

All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

Comparison Graph Circuit Simulation Result

Simulation Result

Vrev(V)

Irev (uA)

%Error Measurement Simulation

6.000 6.650 6.800 2.256

8.000 7.450 7.320 -1.745

10.000 8.300 8.000 -3.614

All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

Reverse Current Characteristic Reference