All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

1

COMPONENTS: TRANSISTOR

PART NUMBER: QST6TR

MANUFACTURER: ROHM

Device Modeling Report

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

2

TRANSISTOR MODEL

PSpice model parameter

Model description

IS Saturation Current

BF Ideal Maximum Forward Beta

NF Forward Current Emission Coefficient

VAF Forward Early Voltage

IKF Forward Beta Roll-off Knee Current

ISE Non-ideal Base-Emitter Diode Saturation Current

NE Non-ideal Base-Emitter Diode Emission Coefficient

BR Ideal Maximum Reverse Beta

NR Reverse Emission Coefficient

VAR Reverse Early Voltage

IKR Reverse Beta Roll-off Knee Current

ISC Non-ideal Base-Collector Diode Saturation Current

NC Non-ideal Base-Collector Diode Emission Coefficient

NK Forward Beta Roll-off Slope Exponent

RE Emitter Resistance

RB Base Resistance

RC Series Collector Resistance

CJE Zero-bias Emitter-Base Junction Capacitance

VJE Emitter-Base Junction Potential

MJE Emitter-Base Junction Grading Coefficient

CJC Zero-bias Collector-Base Junction Capacitance

VJC Collector-base Junction Potential

MJC Collector-base Junction Grading Coefficient

FC Coefficient for Onset of Forward-bias Depletion Capacitance

TF Forward Transit Time

XTF Coefficient for TF Dependency on Vce

VTF Voltage for TF Dependency on Vce

ITF Current for TF Dependency on Ic

PTF Excess Phase at f=1/2pi*TF

TR Reverse Transit Time

EG Activation Energy

XTB Forward Beta Temperature Coefficient

XTI Temperature Coefficient for IS

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3

Ic

Vce

VAR

(X1,Y1)

(X2,Y2)

Y=aX+b

Reverse Early Voltage Characteristic

Reverse

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4

Reverse DC Beta Characteristic (Ie vs. hFE)

Measurement

Simulation

Emitter Current

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5

Ic

VceVAF

(X1,Y1)

(X2,Y2)

Y=aX+b

Forward Early Voltage Characteristic

Forward

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6

C-B Capacitance Characteristics E-B Capacitance Characteristics

Measurement

Simulation

Measurement

Simulation

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7

V1

-2V

0

I1

0Adc

U1QST6TR

IC(X_U1.Q_Q1)

-1.0mA -10A

IC(X_U1.Q_Q1)/ I(U1:3)

10

100

1.0K

Transistor hFE-IC Characteristics

Circuit Simulation Result

Evaluation Circuit

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8

Comparison Graph

Ic(A) hFE

Error(%) Measurement Simulation

-0.001 580.000 576.389 -0.623

-0.002 580.000 574.400 -0.966

-0.005 575.000 570.656 -0.755

-0.010 565.000 566.327 0.235

-0.020 560.000 559.402 -0.107

-0.050 535.000 542.453 1.393

-0.100 514.000 519.397 1.050

-0.200 480.000 483.618 0.754

-0.500 430.000 415.761 -3.311

-1.000 365.000 353.960 -3.025

-2.000 290.000 290.079 0.027

Circuit Simulation Result

Simulation Result

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9

VC

I1

0Adc

0

F1

F20

U1QST6TR

IC(X_U1.Q_Q1)

-1.0mA -10A

VC(X_U1.Q_Q1)

-1.0mV

-10V

VCE(Sat)-IC Characteristics

Circuit Simulation Result

Evaluation Circuit

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10

Comparison Graph

IC(A) VCE(sat)(V)

Error(%) Measurement Simulation

-0.001 -0.0043 -0.0044 1.1628

-0.002 -0.0045 -0.0046 1.1111

-0.005 -0.0050 -0.0051 1.8000

-0.010 0.0058 -0.0059 1.2069

-0.020 -0.0071 -0.0073 2.2535

-0.050 -0.0110 -0.0108 -1.4545

-0.100 -0.0165 -0.0162 -1.8182

-0.200 -0.0270 -0.0262 -2.9630

-0.500 -0.0565 -0.0547 -3.2389

-1.000 -0.1000 -0.1006 0.6000

-2.000 -0.1850 -0.1911 3.2757

Circuit Simulation Result

Simulation Result

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11

VC

I1

0Adc

0

F1

F

20

U1QST6TR

IC(X_U1.Q_Q1)

-1.0mA -10A

VB(X_U1.Q_Q1)

-1.0mV

-10V

VBE(Sat)-IC Characteristics

Circuit Simulation Result

Evaluation Circuit

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12

Comparison Graph

IC(A) VBE(sat)(V)

Error(%) Measurement Simulation

-0.001 -0.780 -0.768 -1.538

-0.002 -0.785 -0.786 0.106

-0.005 -0.795 -0.809 1.761

-0.010 -0.815 -0.827 1.472

-0.020 -0.825 -0.846 2.545

-0.050 -0.850 -0.871 2.471

-0.100 -0.870 -0.890 2.299

-0.200 -0.890 -0.909 2.135

-0.500 -0.910 -0.938 3.077

-1.000 -0.930 -0.962 3.441

-2.000 -0.960 -0.992 3.302

Circuit Simulation Result

Simulation Result

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13

V1

TD = 1u

TF = 10nsPW = 20usPER = 50us

V1 = -7.5

TR = 10ns

V2 = 5

R2

63

R3

75

RL

10

0

VCC

-10

D1

D1N5817D2

D1N5817

L2

50nH

1 2L1

30nH

1 2

U1

QST6TR

R1

50

Time

0s 0.2us 0.6us 1.0us 1.4us 1.8us

1 V(R1:2) 2 V(U1:6)

-8.0V

-7.0V

-6.0V

-5.0V

-4.0V

-3.0V

-2.0V

-1.0V

0V

1.0V

2.0V

3.0V

4.0V

5.0V

6.0V

7.0V

8.0V1

-20V

-10V

0V

10V

20V2

>>

Switching Characteristics Circuit simulation result

Evaluation circuit

Simulation result

Measurement Simulation %Error

tf (ns) 10.000 10.321 3.210

tstg (ns) 160.000 158.118 -1.176

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14

Switching Characteristics Reference

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15

0

+-

H1

H

0

I1

0Adc

1Aac+

-

G1

G

GAIN = 1e6

0IC

0

0

Vce

-2Vdc

0

F1

F 0

U1

QST6TR

U2

QST6TR

0

Ic

1m

V_Ic

-1.0m -10

ZeroCross(DB(I(U1:2)))

10M

100M

1.0G

Ft - IC Characteristics

IC(A) FT(MHz)

Error(%) Measurement Simulation

-0.200 405.000 399.480 -1.363

Circuit Simulation Result

Evaluation Circuit

Simulation Result

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16

V1

-5VdcI1

0Adc

0

U1QST6TR

V_V1

0V -0.5V -1.5V -2.5V -3.5V -4.5V

I(U1:5)

0A

-0.1A

-0.2A

-0.3A

-0.4A

-0.5A

-0.6A

-0.7A

-0.8A

-0.9A

-1.0A

Output Characteristics

Circuit Simulation Result

Evaluation Circuit

IB=-0

-200uA

-400uA

-600uA

-800uA

-1mA

-1.4mA

-1.6mA

-1.8mA

-1.2mA

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17

Output Characteristics Reference