All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

1

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: Power MOSFET (Professional Model) PART NUMBER: 2SJ655 MANUFACTURER: SANYO Body Diode (Professional Model) / ESD Protection Diode

All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

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MOSFET MODEL

PSpice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Mobility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility

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3

Transconductance Characteristic

Circuit Simulation Result

Comparison table

-Id(A) gfs(S)

Error (%) Measurement Simulation

1 6.000 6.188 3.13

2 8.300 8.533 2.81

5 12.500 12.853 2.82

10 17.000 17.254 1.49

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4

V1

0Vdc

V2

-10

0

V3

0Vdc

U12SJ655

V_V1

0V -1.0V -2.0V -3.0V -4.0V -5.0V

I(V3)

0A

-5A

-10A

-15A

-20A

-25A

Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit

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5

Comparison Graph Circuit Simulation Result

Simulation Result

-ID(A) -VGS(V)

Error (%) Measurement Simulation

1 2.475 2.495 0.81

2 2.650 2.631 -0.72

5 2.920 2.910 -0.34

10 3.260 3.241 -0.58

15 3.525 3.506 -0.54

20 3.765 3.738 -0.72

25 3.980 3.948 -0.80

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6

0

U12SJ655

V3

0Vdc

VDS

0VdcV1

-10

V_VDS

0V -200mV -400mV -600mV -800mV

I(V3)

0A

-2.0A

-4.0A

-6.0A

-8.0A

Rds(on) Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

ID= -6A, VGS= -10V Measurement Simulation Error (%)

RDS (on) mΩ 100.000 100.581 0.58

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7

Time*1mA

0 5n 10n 15n 20n 25n 30n 35n 40n 45n

V(W1:4)

0V

-1V

-2V

-3V

-4V

-5V

-6V

-7V

-8V

-9V

-10V

Gate Charge Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

VDD= -50V,ID= -12A ,VGS= -10V

Measurement Simulation Error (%)

Qgs nC 7.000 7.086 1.23

Qgd nC 9.000 9.094 1.04

Qg nC 41.000 41.024 0.06

VDD

-50

I1TD = 0

TF = 5nPW = 600uPER = 1000u

I1 = 0I2 = 1m

TR = 5n -

+

W1

ION = 0uAIOFF = 1mAW

I212

0

D2Dbreak

U12SJ655

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Capacitance Characteristic

Simulation Result

VSD(V) Cbd(pF)

Error(%) Measurement Simulation

1.0 220.000 221.000 0.45

2.0 175.000 174.000 -0.57

5.0 114.000 115.000 0.88

10.0 78.000 79.000 1.28

15.0 62.500 62.000 -0.80

20.0 52.000 52.500 0.96

25.0 45.000 45.800 1.78

30.0 42.000 41.200 -1.90

Simulation

Measurement

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Time

0.6us 0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us

V(U1:G) V(U1:D)/5

0V

-2V

-4V

-6V

-8V

-10V

-12V

-14V

Switching Time Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

ID= -6A, VDD= -50V VGS=0/-10V

Measurement Simulation Error(%)

td(on) ns 17.000 17.276 1.62

0

VDD-50Vdc

V2TD = 1u

TF = 5nPW = 10uPER = 20u

V1 = 0

TR = 5n

V2 = 20

U12SJ655

L2

50nH

R2

50

R1

50

L1

30nH

RL

8.33

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V2

-5V1

0

0

V3

0Vdc

U12SJ655

V_V2

0V -0.5V -1.5V -2.5V -3.5V -4.5V

I(V3)

0A

-5A

-10A

-15A

-20A

-25A

Output Characteristic

Circuit Simulation result

Evaluation circuit

VGS=-3V

-4

-6 -10

- 8

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11

VSDU12SJ655

0

Vsense

0Vdc

V_VSD

0.3V 0.6V 0.9V 1.2V

I(Vsense)

1.0mA

10mA

100mA

1.0A

10A

BODY DIODE SPICE MODEL Forward Current Characteristic

Circuit Simulation Result

Evaluation Circuit

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Comparison Graph Circuit Simulation Result

Simulation Result

IDR(-A) VSD (-V)

%Error Measurement Simulation

0.001 0.514 0.514 0.02

0.010 0.580 0.579 -0.17

0.100 0.645 0.646 0.16

1.000 0.720 0.721 0.14

2.000 0.750 0.750 0.04

5.000 0.800 0.804 0.50

10.000 0.870 0.865 -0.57

20.000 0.950 0.952 0.21

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V1TD = 1.12us

TF = 10nsPW = 10usPER = 100us

V1 = -9.4v

TR = 10ns

V2 = 10.6v

R1

50

0

U1D2SJ655_P

Time

10.2us 10.6us 11.0us 11.4us 11.8us 12.2us

I(R1)

-400mA

-300mA

-200mA

-100mA

-0mA

100mA

200mA

300mA

400mA

Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation

Measurement Simulation Error (%)

trj ns 40.000 40.573 1.43

trb ns 30.000 30.043 0.14

trr ns 70.000 70.616 0.88

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Reverse Recovery Characteristic Reference

Trj= 40.00 (ns) Trb= 30.00 (ns) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example

Measurement

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R1

0.001m

V1

0Vdc

0

U1

2SJ655

R2

100MEG

V_V1

0V -10V -20V -30V -40V -50V

I(R1)

0A

-2mA

-4mA

-6mA

-8mA

-10mA

ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic

Circuit Simulation Result

Evaluation Circuit

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Zener Voltage Characteristic Reference