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All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC5201
MANUFACTURER: TOSHIBA
Device Modeling Report
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
TRANSISTOR MODEL
PSpice model
parameter Model description
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Ic
Vce
VAR
(X1,Y1)
(X2,Y2)
Y=aX+b
Reverse Early Voltage Characteristic
Reverse
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Ic
VceVAF
(X1,Y1)
(X2,Y2)
Y=aX+b
Forward Early Voltage Characteristic
Forward
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
C-B Capacitance Characteristics E-B Capacitance Characteristics
Measurement
Simulation
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
I1
0Adc
V1
6Vdc
v sence
0Vdc
Q1
Q2SC5201
0
I(vsence)
100uA 1.0mA 10mA 100mA
I(vsence)/ IB(Q1)
1.0
10
100
1.0K
Transistor hFE-IC Characteristics
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
1
10
100
1000
0.0001 0.001 0.01 0.1
IC(A)
hF
E
Measurement
Simulation
Comparison Graph
Ic(A) hFE
Error(%) Measurement Simulation
0.0001 115 113.234 -1.536
0.0002 125 125.846 0.677
0.0005 140 142.85 2.036
0.001 155 155.427 0.275
0.002 170 166.758 -1.907
0.005 180 177.506 -1.386
0.01 182 178.079 -2.154
0.02 172 164.595 -4.305
Circuit Simulation Result
Simulation Result
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
0
Q1
Q2SC5201
I1
0Adc
VC
F1
F5
IC(Q1)
100uA 1.0mA 10mA 100mA
V(Q1:c)
10mV
100mV
1.0V
10V
50V
VCE(Sat)-IC Characteristics
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 IC(A)
VC
E(S
AT
) (V
)
Measurement
Simulation
Comparison Graph
IC(A) VCE(sat)(V)
Error(%) Measurement Simulation
0.0001 0.081 0.082 1.235
0.0005 0.072 0.070 -2.778
0.001 0.070 0.067 -4.286
0.005 0.068 0.065 -4.412
0.01 0.070 0.070 0.000
0.05 0.130 0.136 4.615
Circuit Simulation Result
Simulation Result
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
0
F1
F5
VC
I1
0Adc
Q1
Q2SC5201
IC(Q1)
100uA 1.0mA 10mA 100mA
V(Q1:b)
10mV
100mV
1.0V
10V
VBE(Sat)-IC Characteristics
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
0.01
0.1
1
10
0.0001 0.001 0.01 0.1
IC(A)
VB
E(S
AT
) (V
)
Measurement
Simulation
Comparison Graph
IC(A) VBE(sat)(V)
Error(%) Measurement Simulation
0.0001 0.520 0.537 3.269
0.0005 0.580 0.581 0.172
0.001 0.600 0.600 0.000
0.005 0.650 0.641 -1.385
0.01 0.690 0.665 -3.623
0.05 0.760 0.741 -2.500
Circuit Simulation Result
Simulation Result
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Time
16us 18us 20us 22us 24us 26us 28us 30us 32us 34us
IC(Q1) IB(Q1)
-200mA
-150mA
-100mA
-50mA
-0mA
50mA
100mA
150mA
200mA
Switching Characteristics Circuit simulation result
Evaluation circuit
Simulation result
Measurement Simulation %Error
tstg (us) 4.000 4.094 2.350
tf (us) 0.480 0.482 0.417
R3
5k
L1
50nH
L2
50nH
Q1
Q2SC5201
V2
250
R2
110.5
R1
100
0
V1
TD = 1.6us
TF = 50nsPW = 20usPER = 50us
V1 = -5
TR = 50ns
V2 = 6
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
I1
0Adc
0
Q1
Q2SC5201V1
10Vdc
V_V1
0V 2V 4V 6V 8V 10V
IC(Q1)
0A
20mA
40mA
60mA
80mA
100mA
Output Characteristics
Circuit Simulation Result
Evaluation Circuit
IB=0.1mA
0.2
0.5
2
1
3