All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

1

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: MOSFET (Professional Model) PART NUMBER: 2SK3704 MANUFACTURER: SANYO REMARK: Body Diode (Professional Model) / ESD Protection Diode

All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

2

MOSFET MODEL

PSpice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Mobility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility

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3

Transconductance Characteristic

Circuit Simulation Result

Comparison table

Id(A) gfs (s)

Error (%) Measurement Simulation

1 11.400 11.831 3.78

2 16.250 16.659 2.52

5 25.550 26.096 2.14

10 35.750 36.513 2.13

20 49.750 50.871 2.25

50 77.000 78.126 1.46

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4

V1

0Vdc

V2

10

0

V3

0Vdc

U12SK3704

V_V1

0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V

I(V3)

0A

10A

20A

30A

40A

50A

60A

70A

80A

Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit

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5

Comparison Graph Circuit Simulation Result

Simulation Result

ID(A) VGS(V)

Error (%) Measurement Simulation

1 2.400 2.420 0.846

2 2.505 2.490 -0.599

5 2.650 2.631 -0.717

10 2.800 2.790 -0.357

20 3.025 3.018 -0.231

40 3.375 3.347 -0.830

60 3.625 3.605 -0.552

80 3.850 3.825 -0.649

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6

0

V3

0Vdc

VDS

0Vdc

V1

10

U12SK3704

V_VDS

0V 50mV 100mV 150mV 200mV 250mV

I(V3)

0A

5A

10A

15A

20A

25A

Rds(on) Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

ID = 23A, VGS = 10V Measurement Simulation Error (%)

RDS (on) m 10.500 10.500 0.00

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7

VDD

30

I1TD = 0

TF = 5nPW = 600uPER = 1000u

I1 = 0I2 = 1m

TR = 5n -

+

W1

ION = 0uAIOFF = 1mAW

I2

45

0

D2

DbreakU12SK3704

Time*1mA

0 10n 20n 30n 40n 50n 60n 70n

V(W1:3)

0V

5V

10V

Gate Charge Characteristic Circuit Simulation result

Evaluation circuit

Simulation Result

VDD=30V, ID=45A, VGS=10V

Measurement Simulation Error (%)

Qgs nC 10.600 10.610 0.09

Qgd nC 10.000 10.061 0.61

Qg nC 67.000 67.294 0.44

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8

Capacitance Characteristic

Simulation Result

VDS (V) Cbd (pF)

Error (%) Measurement Simulation

0.0 1000.00 999.000 -0.10

5.0 320.00 317.500 -0.78

10.0 212.00 215.000 1.42

15.0 170.00 169.000 -0.59

20.0 140.00 142.000 1.43

25.0 125.00 124.000 -0.80

30.0 115.00 112.000 -2.61

Simulation

Measurement

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9

0

VDD30Vdc

V2TD = 1u

TF = 5nPW = 10uPER = 20u

V1 = 0

TR = 5n

V2 = 20

U12SK3704

L2

50nH

R2

50

R1

50

L1

30nH

RL

1.3

Time

0.6us 0.8us 1.0us 1.2us 1.4us 1.6us

1 V(U1:G) 2 V(U1:D)

0V

2V

4V

6V

8V

10V

12V1

0V

20V

40V2

>>

Switching Time Characteristic Circuit Simulation result

Evaluation circuit

Simulation Result

ID=23A, VDD=30V VGS=0/10V

Measurement Simulation Error(%)

td(on) ns 26.000 26.014 0.05

VGS

ID

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10

V2

10V1

0

0

V3

0Vdc

U12SK3704

V_V2

0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V

I(V3)

0A

10A

20A

30A

40A

50A

60A

70A

80A

Output Characteristic

Circuit Simulation result

Evaluation circuit

VGS=3V

4

10

6 55

8

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11

VSD

0

U12SK3704

Vsense

0Vdc

V_VSD

0V 0.3V 0.6V 0.9V 1.2V 1.5V

I(Vsense)

10mA

100mA

1.0A

10A

100A

Forward Current Characteristic

Circuit Simulation Result

Evaluation Circuit

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12

Comparison Graph Circuit Simulation Result

Simulation Result

IDR(A) VSD(V)

%Error Measurement Simulation

0.01 0.550 0.551 0.18

0.02 0.570 0.571 0.18

0.05 0.595 0.597 0.34

0.10 0.620 0.617 -0.48

0.20 0.640 0.638 -0.31

0.50 0.670 0.665 -0.75

1.00 0.690 0.687 -0.43

2.00 0.710 0.712 0.28

5.00 0.748 0.751 0.40

10.00 0.790 0.793 0.38

20.00 0.860 0.857 -0.35

50.00 1.010 1.010 0.03

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13

V1

TD = 270ns

TF = 10nsPW = 20usPER = 50us

V1 = -9.45v

TR = 10ns

V2 = 10.65v

R1

50

0

U1D2SK3704

Time

19.4us 19.8us 20.2us 20.6us 21.0us 21.4us

I(R1)

-400mA

-300mA

-200mA

-100mA

-0mA

100mA

200mA

300mA

400mA

Reverse Recovery Characteristics Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation

Measurement Simulation Error (%)

trj ns 24.000 24.029 0.12

trb ns 76.000 76.486 0.64

trr ns 100.000 100.515 0.52

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14

Reverse Recovery Characteristic Reference

Trj= 24 (ns) Trb= 76 (ns) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example

Measurement

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15

R1

0.001m

V1

0Vdc

0

U1

2SK3704R2

100MEG

V_V1

0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V

I(R1)

0A

1mA

2mA

3mA

4mA

5mA

6mA

7mA

8mA

9mA

10mA

ESD PROTECTION DIODE SPICE MODEL

Zener Voltage Characteristic

Circuit Simulation Result

Evaluation Circuit

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16

Zener Voltage Characteristic Reference