SPICE MODEL of TPCP8102 (Professional+BDP Model) in SPICE PARK

All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: MOSFET (Professional) PART NUMBER: TPCP8102 MANUFACTURER: TOSHIBA REMARK: P Channel Model Body Diode (Professional) / ESD Protection Diode


MOSFET MODEL

Pspice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Modility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility


0

5

10

15

20

25

0 1 2 3 4 5

- ID - Drain Current - A

gfs

Measurement

Simulation

Transconductance Characteristic

Circuit Simulation Result

Comparison table

-Id(A) gfs

Error(%) Measurement Simulation

0.2 2.500 2.557 2.280

0.5 6.250 6.400 2.400

1 10.000 10.000 0.000

2 14.286 15.000 4.998

5 20.833 21.714 4.229


U1

TPCP8102

0

V2

-10

V3

0Vdc

V1

-3

V_V1

0V -1.0V -2.0V -3.0V

I(V3)

0A

-2A

-4A

-6A

-8A

-10A

-12A

Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit


0

2

4

6

8

10

12

0 1 2 3

-ID

-D

rain

Cu

rren

t -

A

- VGS - Gate to Source Voltage - V

Measurement

Simulation

Comparison Graph Circuit Simulation Result

Simulation Result

-ID(A) -VGS(V)

Error (%) Measurement Simulation

0.1 1.185 1.163 -1.857

0.5 1.270 1.216 -4.252

1 1.320 1.256 -4.848

2 1.385 1.318 -4.838

5 1.525 1.450 -4.918

10 1.700 1.616 -4.941

12 1.760 1.674 -4.886


0

V3

0Vdc

V2

0Vdc

U1TPCP8102

V1

-10

V_V3

0V -20mV -40mV -60mV -80mV

I(V2)

0A

-1.0A

-2.0A

-3.0A

-4.0A

-5.0A

Rds(on) Characteristic


Evaluation circuit

Simulation Result

ID=-3.6A, VGS=-4.5V Measurement Simulation Error (%)

RDS (on) 13.500 m 13.495 m -0.037


DbreakD1

U1TPCP8102

V1

-16

-

+

W1

ION = 0IOFF = 1mA

W

ROFF = 1e6RON = 1.0

I2

-7.2

I1 TD = 0TF = 1nPW = 600uPER = 1500uI1 = 0I2 = 1mTR = 1n

0

Time*1mA

0 10n 20n 30n 40n

V(W1:4)

0V

-2.0V

-4.0V

-6.0V

-8.0V

Gate Charge Characteristic


Evaluation circuit

Simulation Result

VDD=-16V,ID=-7.2A ,VGS=-5V

Measurement Simulation Error (%)

Qgs 5.400 nC 5.391 nC -0.167

Qgd 10.000 nC 10.017 nC 0.170

Qg 33.000 nC 33.009 nC 0.027


Capacitance Characteristic

Simulation Result

VDS(V) Cbd(pF)

Error(%) Measurement Simulation

0.1 250.000 249.500 -0.200

0.2 225.000 224.000 -0.444

0.5 180.000 181.000 0.556

1 142.000 142.000 0.000

2 106.000 106.000 0.000

5 68.000 68.050 0.074

10 48.000 48.000 0.000

20 35.000 34.990 -0.029

Simulation

Measurement


V2

TD = 2u

TF = 10nPW = 10uPER = 50u

V1 = 0

TR = 10n

V2 = -10

R3

2.77

R2

4.7

0

V1-10L2

30nH

R1

4.7

L1

30nH

U1TPCP8102

Time

1.94us 1.98us 2.02us 2.06us 2.10us 2.14us 2.18us 2.22us

V(U1:4) V(U1:5)/2

0V

-1.0V

-2.0V

-3.0V

-4.0V

-5.0V

-6.0V

Switching Time Characteristic


Evaluation circuit

Simulation Result

ID=-3.6A, VDD=-10V VGS=-5V

Measurement Simulation Error(%)

ton 14.000 ns 14.000 ns 0.000


V3

0Vdc

0

V2

-2VV1

0

U1

TPCP8102

V_V2

0V -0.4V -0.8V -1.2V -1.6V -2.0V

I(V3)

0A

-2A

-4A

-6A

-8A

-10A

V_V2

0V -0.4V -0.8V -1.2V -1.6V -2.0V

I(V3)

0A

-2A

-4A

-6A

-8A

-10A

V_V2

0V -0.4V -0.8V -1.2V -1.6V -2.0V

I(V3)

0A

-2A

-4A

-6A

-8A

-10A

Output Characteristic


Evaluation circuit

VGS= -1.3V

-1.6V

-1.4V

-1.5V

-1.7V

-5

-1.9 -1.8

-3

-10

-2


V_V1

0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V

-I(R1)

-100mA

-100A3

R1

0.01m

V1

0Vdc U1DTPCP8102_PRO

0

Forward Current Characteristic


Evaluation Circuit


0.1

1

10

100

0 0.2 0.4 0.6 0.8 1 1.2

- Drain Source voltage VDS(V)

- D

rain

revers

e c

urr

en

t ID

R(A

)Measurement

Simulation

Comparison Graph Circuit Simulation Result

Simulation Result

-IDR(A) -VDS(V)

Measurement -VDS(V)

Simulation %Error

0.100 0.535 0.534 -0.187

0.200 0.560 0.560 0.000

0.500 0.600 0.600 0.000

1.000 0.640 0.639 -0.156

2.000 0.690 0.691 0.145

5.000 0.790 0.788 -0.253

10.000 0.900 0.900 0.000


U1DTPCP8102_PRO

0

V1

TD = 29n

TF = 10nPW = 20uPER = 100u

V1 = -9.59

TR = 10n

V2 = 10.5

RL

50

Time

19.88us 19.96us 20.04us 20.12us 20.20us 20.28us

I(RL)

-400mA

-200mA

0A

200mA

400mA

Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation

Measurement Simulation Error (%)

trj 17.600 ns 17.657 ns 0.324

trb 60.800 ns 60.702 ns -0.161

trr 78.400 ns 78.359 ns -0.052


Reverse Recovery Characteristic Reference

Trj=17.6(ns) Trb=60.8(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example


V1

0Vdc

0

R1

0.01m

R2

1G

U1TPCP8102

V_V1

0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V

I(R1)

0A

5mA

10mA

Zener Voltage Characteristic


Evaluation Circuit


Zener Voltage Characteristic Reference

Technology

SPICE MODEL of TPCP8102 (Professional+BDP Model) in SPICE PARK