All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

COMPONENTS: TRANSISTOR

PART NUMBER: 2SC5460

MANUFACTURER: TOSHIBA

Device Modeling Report

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

TRANSISTOR MODEL

PSpice model

parameter Model description

IS Saturation Current

BF Ideal Maximum Forward Beta

NF Forward Current Emission Coefficient

VAF Forward Early Voltage

IKF Forward Beta Roll-off Knee Current

ISE Non-ideal Base-Emitter Diode Saturation Current

NE Non-ideal Base-Emitter Diode Emission Coefficient

BR Ideal Maximum Reverse Beta

NR Reverse Emission Coefficient

VAR Reverse Early Voltage

IKR Reverse Beta Roll-off Knee Current

ISC Non-ideal Base-Collector Diode Saturation Current

NC Non-ideal Base-Collector Diode Emission Coefficient

NK Forward Beta Roll-off Slope Exponent

RE Emitter Resistance

RB Base Resistance

RC Series Collector Resistance

CJE Zero-bias Emitter-Base Junction Capacitance

VJE Emitter-Base Junction Potential

MJE Emitter-Base Junction Grading Coefficient

CJC Zero-bias Collector-Base Junction Capacitance

VJC Collector-base Junction Potential

MJC Collector-base Junction Grading Coefficient

FC Coefficient for Onset of Forward-bias Depletion Capacitance

TF Forward Transit Time

XTF Coefficient for TF Dependency on Vce

VTF Voltage for TF Dependency on Vce

ITF Current for TF Dependency on Ic

PTF Excess Phase at f=1/2pi*TF

TR Reverse Transit Time

EG Activation Energy

XTB Forward Beta Temperature Coefficient

XTI Temperature Coefficient for IS

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Ic

Vce

VAR

(X1,Y1)

(X2,Y2)

Y=aX+b

Reverse Early Voltage Characteristic

Reverse

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Reverse DC Beta Characteristic (Ie vs. hFE)

Measurement

Simulation

Emitter Current

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Ic

VceVAF

(X1,Y1)

(X2,Y2)

Y=aX+b

Forward Early Voltage Characteristic

Forward

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C-B Capacitance Characteristics E-B Capacitance Characteristics

Measurement

Simulation

Measurement

Simulation

Measurement

Simulation

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IB

0Adc

0

Q1

Q2SC5460

VCC5Vdc

IC(Q1)

10uA 100uA 1.0mA 10mA 100mA

IC(Q1)/ IB(Q1)

1.0

10

100

1.0K

Transistor hFE-IC Characteristics

Circuit Simulation Result

Evaluation Circuit

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10

100

0.0001 0.001 0.01 0.1

IC(A)

hF

E

Measurement

Simulation

Comparison Graph

Ic(A) hFE

Error(%) Measurement Simulation

0.001 24.50 25.122 2.539

0.002 26.50 27.348 3.200

0.005 29 29 0.000

0.01 29 27.912 -3.752

0.02 23.00 23.228 0.991

0.05 12.00 12.315 2.625

Circuit Simulation Result

Simulation Result

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Q1

Q2SC5460

0

VC

IB

0Adc

F1

F5

IC(Q1)

100uA 1.0mA 10mA 100mA

V(Q1:c)

100mV

1.0V

10V

30mV

VCE(Sat)-IC Characteristics

Circuit Simulation Result

Evaluation Circuit

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0.01

0.1

1

0.0001 0.001 0.01 0.1IC(A)

VC

E(S

AT

) (V

)

Measurement

Simulation

Comparison Graph

IC(A) VCE(sat) (V)

Error(%) Measurement Simulation

0.001 0.167 0.166 -0.599

0.002 0.16 0.161 0.625

0.003 0.155 0.158 1.935

0.01 0.16 0.16 0.000

0.02 0.17 0.171 0.588

0.05 0.21 0.213 1.429

Circuit Simulation Result

Simulation Result

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

VC

F1

F5

Q1

Q2SC5460

0

IB

0Adc

I(VC)

100uA 1.0mA 10mA 50mA

V(Q1:b)

100mV

1.0V

10V

30mV

VBE(Sat)-IC Characteristics

Circuit Simulation Result

Evaluation Circuit

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

0.1

1

10

0.0001 0.001 0.01 0.1

IC(A)

VB

E(S

AT

) (V

)

Measurement

Simulation

Comparison Graph

IC(A) VBE(sat) (V)

Error(%) Measurement Simulation

0.001 0.66 0.647 -1.970

0.002 0.68 0.665 -2.206

0.005 0.7 0.693 -1.000

0.01 0.725 0.717 -1.103

0.02 0.75 0.747 -0.400

0.05 0.8 0.801 0.125

Circuit Simulation Result

Simulation Result

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Time

11us 12us 13us 14us 15us 16us 17us 18us 19us 20us 21us

1 IC(Q1) 2 IB(Q1)

-40mA

-30mA

-20mA

-10mA

0mA

10mA

20mA

30mA

40mA1

-200mA

-150mA

-100mA

-50mA

-0mA

50mA

100mA

150mA

200mA2

>>

Switching Characteristics Circuit simulation result

Evaluation circuit

Simulation result

Measurement Simulation Error(%)

tstg (us) 3.68 3.627 -1.440

tf (us) 4.6 4.67 1.522

R2

81

V2

250

L1

50nH

Q1

Q2SC5460

R1

50

R3 10k

V1TD = 1us

TF = 5.7ns

PW = 11.us

PER = 2000us

V1 = -3.45

TR = 5.7ns

V2 = 3.44

L2

50nH

0

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Switching Characteristics Reference

IB : (50mA/Div)

IC : (10mA/Div)

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0

Q1

Q2SC5460

IB0Adc

VCC5Vdc

V_VCC

0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V 22V 24V

IC(Q1)

0A

20mA

40mA

60mA

80mA

100mA

Output Characteristics

Circuit Simulation Result

Evaluation Circuit

IB=1mA

2muA

3mA

4mA

5mA

6mA

7mA

8mA 9mA

10mA

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

Output Characteristics Reference