SPICE MODEL of 2SJ537 (Professional+BDP Model) in SPICE PARK

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

Device Modeling Report

.

Bee Technologies Inc.

COMPONENTS: MOSFET (Professional) PART NUMBER: 2SJ537 MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection


MOSFET MODEL PARAMETERS

PSpice model

parameters Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Mobility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility


0

2

4

6

8

10

0 1 2 3 4 5 6

DRIAN CURRENT - ID (A)

GF

S(s

)

Measurement

Simulation

Transconductance Characteristic

Circuit Simulation Result

Comparison table

Id(A) Gfs(S)

Error(%) Measurement Simulation

-0.200 0.950 0.989 4.105

-0.500 1.600 1.556 -2.750

-1.000 2.250 2.180 -3.111

-2.000 3.200 3.059 -4.406

-5.000 4.800 4.746 -1.125


V_VGS

0V -2V -4V -6V -8V -10V

I(Vsense)

0A

-2A

-4A

-6A

-8A

-10A

Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit

VGS

0Vdc

0

Vsense

U32SJ537

VDS-10Vdc


0

2

4

6

8

10

0 2 4 6 8 10

Gate-Source Voltage - Vgs (V)

Measurement

Simulation

Dra

in C

urr

en

t -

Id (

A)

Comparison Graph Circuit Simulation Result

Simulation Result

ID(A) VGS(V)

Error (%) Measurement Simulation

-0.200 -2.300 -2.316 0.687

-0.500 -2.500 -2.552 2.080

-1.000 -2.800 -2.824 0.857

-2.000 -3.200 -3.213 0.406

-5.000 -4.000 -3.996 -0.100

-10.000 -5.020 -4.900 -2.390


Vsense

U3

2SJ537

VGS-10Vdc

VDS0Vdc

0

V_VDS

0V -100mV -200mV -300mV -400mV

I(Vsense)

0A

-1.0A

-2.0A

-2.5A

Rds(on) Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

ID=-2.5A, VGS=-10V Measurement Simulation Error (%)

RDS (on) 0.160 0.160 0.000


Time*1mA

0 10n 20n 30n

-V(W1:4)

0V

5V

10V

15V

20V

Gate Charge Characteristic


Evaluation Circuit

Simulation Result

VDD=-40V, ID= -5A

,VGS=-10V Measurement Simulation Error (%)

Qgs 2.500 nC 2.486 nC -0.560

Qgd 5.000 nC 5.000 nC 0.000

Qg 18.000 nC 17.775 nC -1.250

I2

5Adc

-

+

W1

ION = 0uAIOFF = 1mA

WD2

Dbreak

U14

2SJ537

0

I1

TD = 0

TF = 10nPW = 600uPER = 1000u

I1 = 0I2 = 1m

TR = 10nVDD

-40Vdc


Capacitance Characteristic

Simulation Result

VDS(V) Cbd(pF)

Error(%) Measurement Simulation

0.100 400.000 405.000 1.250

0.200 390.000 392.000 0.513

0.500 370.000 370.000 0.000

1.000 310.000 310.000 0.000

2.000 250.000 250.000 0.000

5.000 180.000 184.000 2.222

10.000 140.000 138.000 -1.429

20.000 112.000 110.000 -1.786

50.000 73.000 70.000 -4.110

Simulation

Measurement


2

R2

4.7

VD

-25Vdc

L3

30nH

RL

10

L2

50nHU4

2SJ537V1

TD = 2uTF = 10n

PW = 10uPER = 10m

V1 = 0

TR = 10n

V2 = 20

0

3

R1

4.7

Vsense

Time

2.000us 2.100us 2.200us1.923us

V(L3:2) V(L2:1)/2.5

0V

-1V

-2V

-3V

-4V

-5V

-6V

-7V

-8V

-9V

-10V

-11V

-12V

-13V

-14V

-15V

Switching Time Characteristic


Evaluation Circuit

Simulation Result

ID=-2.5A, VDD= -25V, VGS=0/4V

Measurement Simulation Error(%)

Td(on) 35.000 ns 34.869 ns -0.374

VGS

ID


V_VDS

0V -2V -4V -6V -8V -10V

I(Vsense)

0A

-2A

-4A

-6A

-8A

-10A

Output Characteristic


Evaluation Circuit

- 2.5V

VGS = - 3 V

- 4 V

- 6 - 8 -10

U3

2SJ537

0

Vsense

VDS-10Vdc

VGS

0Vdc


U6

2SJ537

0

V1

0Vdc

R1

0.01m

V_V1

0V 0.4V 0.8V 1.2V 1.6V

I(R1)

100mA

1.0A

10A

100A

Forward Current Characteristic


Evaluation Circuit


0.1

1

10

100

0 0.4 0.8 1.2 1.6

SOURCE-DRAINE VOLTAGE VSD (V)

DR

AIN

RE

VE

RS

E C

UR

RE

NT

ID

R (

A)

Measurement

Simulation

Comparison Graph Circuit Simulation Result

Simulation Result

IDR(A) VSD(V)

%Error Measurement Simulation

0.100 0.660 0.665 0.758

0.200 0.700 0.694 -0.857

0.500 0.740 0.735 -0.676

1.000 0.770 0.773 0.390

2.000 0.830 0.825 -0.602

5.000 0.930 0.939 0.968

10.000 1.100 1.099 -0.091


Time

0.88us 0.96us 1.04us 1.12us 1.20us 1.28us

I(R1)

-400mA

-200mA

0A

200mA

400mA

Reverse Recovery Characteristic (Body Diode) Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation

Measurement Simulation Error (%)

trj 33.600 ns 33.939 ns 1.009

trb 24.500 ns 23.276 ns -4.996

trr 58.400 ns 57.215 ns -2.029

0

U6

D2SJ537_PRO

R1 50

V1TD = 9n

TF = 5.7nsPW = 1usPER = 50us

V1 = -9.3V

TR = 10ns

V2 = 10.6V


Reverse Recovery Characteristic (Body Diode) Reference

Trj= (33.6ns) Trb= (58.4ns) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example


0

I10Adc

R1

0.01m

V1

0Vdc

U20

2SJ537

V_V1

0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V

I(R1)

0A

1mA

2mA

3mA

4mA

5mA

6mA

7mA

8mA

9mA

10mA

Zener Voltage Characteristic


Evaluation Circuit


Zener Voltage Characteristic Reference

Technology

SPICE MODEL of 2SJ537 (Professional+BDP Model) in SPICE PARK