All Rights Reserved Copyright (C) Bee Technologies Inc. 2011

1

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: MOSFET (Model Parameters)

PART NUMBER: 2SK3019

MANUFACTURER: ROHM

REMARK: Body Diode (Model Parameters) /

ESD Protection Diode

All Rights Reserved Copyright (C) Bee Technologies Inc. 2011

2

U12SK3019

Circuit Configuration

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3

MOSFET MODEL

PSpice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Mobility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility

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4

Transconductance Characteristics

Circuit Simulation result

Comparison table

ID (A) gfs (S)

%Error Measurement Simulation

0.01 0.043 0.041 -3.53

0.02 0.059 0.058 -1.69

0.05 0.092 0.092 0.00

0.1 0.129 0.130 0.78

VDS=3V

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5

V_VGS

0V 1.0V 2.0V 3.0V 4.0V

-I(VDS)

1.0mA

10mA

100mA

VGS

0

VDS

3V

U12SK3019

Vgs-Id Characteristics

Circuit Simulation result

Evaluation circuit

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6

Comparison Graph

Circuit Simulation result

Comparison table

ID (A) VGS (V)

%Error Measurement Simulation

0.01 1.690 1.645 -2.66

0.02 1.880 1.846 -1.81

0.05 2.240 2.246 0.27

0.1 2.640 2.693 2.01

VDS=3V

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7

VGS

4V

VDSU12SK3019

0

V_VDS

0V 20mV 40mV 50mV

-I(VDS)

0A

5mA

10mA

Rds(on) Characteristics

Circuit Simulation result

Evaluation circuit

Test condition: VGS=4(V), ID=10(mA)

Parameter Unit Measurement Simulation %Error

RDS(on) Ω 5.00 4.97 -0.60

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8

V_VDS

0V 1.0V 2.0V 3.0V 4.0V 5.0V

-I(VDS)

0A

50mA

100mA

150mA

VGS

0

VDS

U12SK3019

Output Characteristics

Circuit Simulation result

Evaluation circuit

VGS=1.5V

2.0

2.5

3 4

3.5

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9

Capacitance Characteristics

Simulation result

Comparison table

VDS (V) Cbd (pF)

%Error Measurement Simulation

1 6.00 6.03 0.50

2 5.80 5.77 -0.52

5 5.00 5.04 0.80

10 4.50 4.60 0.00

20 3.80 3.82 0.53

Simulation

Measurement

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10

Time*100u

0s 100ps 200ps 300ps 400ps 500ps 600ps 700ps

V(W1:3)

0V

1V

2V

3V

4V

5V

6V

7V

8V

9V

10V

0

D1

DMOD

-

+W1

ION = 0IOFF = 100uAW

IGTD = 0

TF = 1n

PW = 10mPER = 1

I1 = 0I2 = 100u

TR = 1n

ID

100mA

VDD

24V

U12SK3019

Gate Charge Characteristics

Circuit Simulation result

Evaluation circuit

Test condition: VDD=24(V), VGS=8(V), ID=100(mA)

Parameter Unit Measurement Simulation %Error

Qgs nc 0.125 0.125 0.00

Qgd nc 0.195 0.197 1.03

Qg nc 0.590 0.580 -1.69

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11

Time

1.84us 1.92us 2.00us 2.08us 2.16us 2.24us

V(G) V(D)

0V

1V

2V

3V

4V

5V

6V

7V

8V

9V

10V

G

U12SK3019

V1TD = 2u

TF = 20nPW = 5uPER = 100u

V1 = 0

TR = 20n

V2 = 5VDD

5

0

RL

500

L2

30nH

12D

L130nH

12R1

10

Switching Time Characteristics

Circuit Simulation result

Evaluation circuit

Test condition: VDD=5(V), VGS=5(V), ID=10(mA), RG=10()

Parameter Unit Measurement Simulation %Error

ton ns 50.00 49.1 -1.80

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12

V_VSD

0V 0.5V 1.0V 1.5V

-I(U1:D)

100uA

1.0mA

10mA

100mA

VSD

0

U12SK3019

Body Diode Forward Current Characteristics

Circuit Simulation result

Evaluation circuit

All Rights Reserved Copyright (C) Bee Technologies Inc. 2011

13

Comparison Graph

Simulation result

Comparison table

IDR (A) VSD (V)

%Error Measurement Simulation

0.001 0.620 0.617 -0.48

0.002 0.640 0.639 -0.16

0.005 0.665 0.668 0.45

0.01 0.690 0.691 0.14

0.02 0.720 0.718 -0.28

0.05 0.770 0.765 -0.65

0.1 0.818 0.819 0.12

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Time

9.96us 10.00us 10.04us 10.08us 10.12us

I(R1)

-400mA

-300mA

-200mA

-100mA

-0mA

100mA

200mA

300mA

400mA

U1

2SK3019

0

V1TD = 7ns

TF = 20nsPW = 10usPER = 1ms

V1 = -9.4V

TR = 10ns

V2 = 10.9V

R1

50

Reverse Recovery Characteristics

Circuit Simulation result

Evaluation circuit

Comparison Measurement vs. Simulation

Parameter Unit Measurement Simulation %Error

trj ns 14.0 13.8 -1.43

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15

Reverse Recovery Characteristics Reference

Trj = 14(ns)

Trb = 17(ns)

Conditions: Ifwd = lrev = 0.2(A), Rl = 50

Relation between trj and trb

Example

Measurement

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16

V_VGS

0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V

-I(VGS)

0A

0.1mA

0.2mA

0.3mA

0.4mA

0.5mA

0.6mA

0.7mA

0.8mA

0.9mA

1.0mA

VGS

0

R1

1G

U12SK3019

ESD PROTECTION DIODE

Zener Voltage Characteristics

Circuit Simulation result

Evaluation circuit

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17

Zener Voltage Characteristics Reference

IZ = 76(uA)

VZ = 23.25(V) at IZ

Measurement