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All Rights Reserved Copyright (c) Bee Technologies Inc. 2006 COMPONENTS: TRANSISTOR PART NUMBER: 2SA1680 MANUFACTURER: TOSHIBA Device Modeling Report Bee Technologies Inc.

SPICE MODEL of 2SA1680 in SPICE PARK

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All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

COMPONENTS: TRANSISTOR

PART NUMBER: 2SA1680

MANUFACTURER: TOSHIBA

Device Modeling Report

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

TRANSISTOR MODEL

PSpice model

parameter Model description

IS Saturation Current

BF Ideal Maximum Forward Beta

NF Forward Current Emission Coefficient

VAF Forward Early Voltage

IKF Forward Beta Roll-off Knee Current

ISE Non-ideal Base-Emitter Diode Saturation Current

NE Non-ideal Base-Emitter Diode Emission Coefficient

BR Ideal Maximum Reverse Beta

NR Reverse Emission Coefficient

VAR Reverse Early Voltage

IKR Reverse Beta Roll-off Knee Current

ISC Non-ideal Base-Collector Diode Saturation Current

NC Non-ideal Base-Collector Diode Emission Coefficient

NK Forward Beta Roll-off Slope Exponent

RE Emitter Resistance

RB Base Resistance

RC Series Collector Resistance

CJE Zero-bias Emitter-Base Junction Capacitance

VJE Emitter-Base Junction Potential

MJE Emitter-Base Junction Grading Coefficient

CJC Zero-bias Collector-Base Junction Capacitance

VJC Collector-base Junction Potential

MJC Collector-base Junction Grading Coefficient

FC Coefficient for Onset of Forward-bias Depletion Capacitance

TF Forward Transit Time

XTF Coefficient for TF Dependency on Vce

VTF Voltage for TF Dependency on Vce

ITF Current for TF Dependency on Ic

PTF Excess Phase at f=1/2pi*TF

TR Reverse Transit Time

EG Activation Energy

XTB Forward Beta Temperature Coefficient

XTI Temperature Coefficient for IS

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Reverse Early Voltage Characteristic

Reverse

Ic

VceVAF

(X1,Y1)

(X2,Y2)

Y=aX+b

VAR

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Reverse DC Beta Characteristic (Ie vs. hFE)

Measurement

Simulation

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Ic

VceVAF

(X1,Y1)

(X2,Y2)

Y=aX+b

Forward Early Voltage Characteristic

Forward

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C-B Capacitance Characteristics E-B Capacitance Characteristics

Measurement

Simulation

Measurement

Simulation

Measurement

Simulation

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Q1

Q2SA1680

0

V1

5Vdc

I1

0Adc

IC(Q1)

-1.0mA -5.0A

IC(Q1)/ IB(Q1)

10

100

5.0

500

Transistor hFE-IC Characteristics

Circuit Simulation Result

Evaluation Circuit

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10

100

1000

0.001 0.01 0.1 1 10

- IC(A)

hF

E

Measurement

Simulation

Comparison Graph

Ic(A) hFE

Error(%) Measurement Simulation

-0.001 200.000 196.818 -1.591

-0.002 200.000 196.753 -1.624

-0.005 200.000 196.668 -1.666

-0.010 200.000 196.603 -1.699

-0.020 197.000 196.504 -0.252

-0.050 190.000 193.958 2.083

-0.100 188.000 189.885 1.003

-0.200 180.000 181.965 1.092

-0.500 155.000 158.984 2.570

-1.000 120.000 122.061 1.718

Circuit Simulation Result

Simulation Result

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0

I1

0Adc

F1

F20

Q1

Q2SA1680

VC

IC(Q1)

-1.0mA -5.0A

V(Q1:c)

-10mV

-10V

VCE(Sat)-IC Characteristics

Circuit Simulation Result

Evaluation Circuit

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

0.01

0.1

1

10

0.001 0.01 0.1 - IC(A)

- V

CE

(SA

T)

(V)

Measurement

Simulation

Comparison Graph

IC(A) VCE(sat)

Error(%) Measurement Simulation

-0.001 -0.025 -0.025 0.000

-0.01 -0.023 -0.023 0.000

-0.1 -0.045 -0.046 2.222

-1 -0.300 -0.301 0.333

Circuit Simulation Result

Simulation Result

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Q1

Q2SA1680

I1

0Adc

0

VC

F1

F20

IC(Q1)

-1.0mA -5.0A

V(Q1:b)

-10mV

-10V

VBE(Sat)-IC Characteristics

Circuit Simulation Result

Evaluation Circuit

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0.01

0.1

1

10

0.001 0.01 0.1 1

- IC(A)

- V

BE

(SA

T)

(V)

Measurement

Simulation

Comparison Graph

IC(A) VBE(sat)

Error(%) Measurement Simulation

-0.001 -0.600 -0.621 3.500

-0.01 -0.660 -0.687 4.091

-0.1 -0.740 -0.767 3.649

-1 -0.970 -0.978 0.825

Circuit Simulation Result

Simulation Result

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Time

20.8us 21.0us 21.2us 21.4us 21.6us 21.8us

-IB(Q1) -IC(Q1)

0A

0.5A

1.0A

1.5A

Switching Characteristics Circuit simulation result

Evaluation circuit

Simulation result

Measurement Simulation %Error

tstg (us) 0.300 0.292 -2.667

tf (us) 0.100 0.098 -2.000

L1

50nHR1

50Q1

Q2SA1680

L2

50nHR2

97

R3

30

V1

TD = 1us

TF = 15nsPW = 20usPER = 50us

V1 = -2

TR = 15ns

V2 = 6

0

V2

-30

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Q1

Q2SA1680

0

I1

0Adc

V1

5Vdc

V_V1

0V 1.0V 2.0V 3.0V 4.0V 5.0V

IC(Q1)

0A

-0.4A

-0.8A

-1.2A

-1.6A

-2.0A

Output Characteristics

Circuit Simulation Result

Evaluation Circuit

IB=2mA

4mA

6mA

10mA

15mA

20mA

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Output Characteristics Reference