All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: Power MOSFET (Model Parameter) PART NUMBER: TPCA8015-H MANUFACTURER: TOSHIBA Body Diode (Model Parameter) / ESD Protection Diode

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

MOSFET MODEL

Pspice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Modility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility

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Transconductance Characteristic

Circuit Simulation Result

Comparison table

Id(A) gfs

Error(%) Measurement Simulation

1.000 23.000 23.274 1.191

2.000 30.000 31.004 3.347

5.000 45.000 45.471 1.047

10.00 60.000 59.683 -0.528

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U2TPCA8015-H

V110Vdc

V210Vdc

0

V3

0Vdc

V_V1

0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V

I(V3)

0A

20A

40A

60A

80A

100A

Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit

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Comparison Graph Circuit Simulation Result

Simulation Result

ID(A) VGS(V)

Error (%) Measurement Simulation

2.000 2.600 2.702 3.919

5.000 2.690 2.781 3.398

10.000 2.810 2.878 2.406

20.000 2.970 3.026 1.872

50.000 3.300 3.361 1.839

100.000 3.800 3.804 0.116

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

U2TPCA8015-H

V110Vdc

V210Vdc

0

V3

0Vdc

V_V2

0V 200mV 400mV 500mV

I(V3)

0A

2.5A

5.0A

7.5A

10.0A

12.5A

15.0A

17.5A

Rds(on) Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

ID=17.5A, VGS=10V Measurement Simulation Error (%)

RDS (on) 4.400 m 4.460 m 1.364

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-

+W1

ION = 0uAIOFF = 10mW

ROFF = 100GRON = 1m

0

D1Dbreak

U2TPCA8015-H

I2DC = 35Adc

V132Vdc

V20Vdc

I1

TD = 0

TF = 10nPW = 600uPER = 1000u

I1 = 0

I2 = 10m

TR = 10n

Time*1m

0s 10ns 20ns 30ns 40ns

V(U2:4)

0V

4V

8V

12V

16V

Gate Charge Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

VDD=32V,ID= 35A ,VGS=5V

Measurement Simulation Error (%)

Qgs 7.000 nC 7.288 nC 4.114

Qgd 9.000 nC 8.640 nC 4.000

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Capacitance Characteristic

Simulation Result

VDS(V) Cbd(pF)

Error(%) Measurement Simulation

0.100 2120.000 2100.000 -0.943

0.200 2060.000 2000.000 -2.913

0.500 1750.000 1760.000 0.571

1.000 1500.000 1500.000 0.000

2.000 1200.000 1250.000 4.167

5.000 780.000 790.000 1.282

10.000 550.000 560.000 1.818

20.000 400.000 405.000 1.250

40.000 290.000 280.000 -3.448

Simulation

Measurement

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2

V1

TD = 5u

TF = 6nPW = 5uPER = 10u

V1 = 0

TR = 6n

V2 = 20

L2

50nH

3

0

VDD

20

V30Vdc

0

R4

4.7

U2TPCA8015-H

R3

4.7RL

1.11

L1

30nH

0 0

Time

4.980us 5.000us 5.020us 5.040us 5.060us4.962us

V(2) V(3)/2

0V

1V

2V

3V

4V

5V

6V

7V

8V

9V

10V

11V

12V

Switching Time Characteristic

Circuit Simulation result

Evaluation circuit

Simulation Result

ID=17.5A, VDD= 20V VGS=0/10V

Measurement Simulation Error(%)

ton 12.000 ns 12.029 ns 0.242

VGS

ID

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

U2TPCA8015-H

V110Vdc

V210Vdc

0

V3

0Vdc

V_V2

0V 1.0V 2.0V 3.0V 4.0V 5.0V

I(V3)

0A

20A

40A

60A

80A

100A

Output Characteristic

Circuit Simulation result

Evaluation circuit

VGS= 2.8V

3.0V

3.2 V

3.4 V

3.5 V

3.7 V 4

6

3.8 V

4.5

10

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

U2

TPCA8015-H

V1

0Vdc

0

R1

0.01m

V_V1

0V 0.2V 0.4V 0.6V 0.8V 1.0V

I(R1)

100mA

1.0A

10A

100A

BODY DIODE SPICE MODEL Forward Current Characteristic

Circuit Simulation Result

Evaluation Circuit

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

Comparison Graph Circuit Simulation Result

Simulation Result

IDR(A) VSD(V)

%Error Measurement Simulation

0.100 0.590 0.587 -0.508

0.200 0.605 0.604 -0.165

0.500 0.627 0.627 0.000

1.000 0.645 0.646 0.155

2.000 0.665 0.666 0.150

5.000 0.700 0.697 -0.429

10.000 0.730 0.727 -0.411

20.000 0.770 0.765 -0.649

50.000 0.830 0.830 0.000

100.000 0.900 0.900 0.000

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Time

0.7us 0.9us 1.1us 1.3us 1.5us 1.7us

I(R1)

-400mA

-300mA

-200mA

-100mA

-0mA

100mA

200mA

300mA

400mA

Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation

Measurement Simulation Error (%)

trj 18.000 ns 17.934 ns -0.367

trb 112.000 ns 110.345 ns -1.478

trr 130.000 ns 128.279 ns -1.324

0

R1 50

V1

TD = 60n

TF = 10n

PW = 1u

PER = 2u

V1 = -9.4V

TR = 12n

V2 = 10.6V

TPCA8015-H

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Reverse Recovery Characteristic Reference

Trj=18 (ns) Trb=112(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example

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V_V1

0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V

I(R1)

0A

1mA

2mA

3mA

4mA

5mA

6mA

7mA

8mA

9mA

10mA

ESD PROTECTION DIODE SPICE MODEL

Zener Voltage Characteristic

Circuit Simulation Result

Evaluation Circuit

0

V1

0Vdc

R1

0.01m

U7

TPCA8015_H

Ropen

100MEG

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Zener Voltage Characteristic Reference