All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Professional Model) PART NUMBER: 2SJ655 MANUFACTURER: SANYO Body Diode (Professional Model) / ESD Protection Diode
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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MOSFET MODEL
PSpice model parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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Transconductance Characteristic
Circuit Simulation Result
Comparison table
-Id(A) gfs(S)
Error (%) Measurement Simulation
1 6.000 6.188 3.13
2 8.300 8.533 2.81
5 12.500 12.853 2.82
10 17.000 17.254 1.49
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V1
0Vdc
V2
-10
0
V3
0Vdc
U12SJ655
V_V1
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
0A
-5A
-10A
-15A
-20A
-25A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
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Comparison Graph Circuit Simulation Result
Simulation Result
-ID(A) -VGS(V)
Error (%) Measurement Simulation
1 2.475 2.495 0.81
2 2.650 2.631 -0.72
5 2.920 2.910 -0.34
10 3.260 3.241 -0.58
15 3.525 3.506 -0.54
20 3.765 3.738 -0.72
25 3.980 3.948 -0.80
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0
U12SJ655
V3
0Vdc
VDS
0VdcV1
-10
V_VDS
0V -200mV -400mV -600mV -800mV
I(V3)
0A
-2.0A
-4.0A
-6.0A
-8.0A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -6A, VGS= -10V Measurement Simulation Error (%)
RDS (on) mΩ 100.000 100.581 0.58
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Time*1mA
0 5n 10n 15n 20n 25n 30n 35n 40n 45n
V(W1:4)
0V
-1V
-2V
-3V
-4V
-5V
-6V
-7V
-8V
-9V
-10V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD= -50V,ID= -12A ,VGS= -10V
Measurement Simulation Error (%)
Qgs nC 7.000 7.086 1.23
Qgd nC 9.000 9.094 1.04
Qg nC 41.000 41.024 0.06
VDD
-50
I1TD = 0
TF = 5nPW = 600uPER = 1000u
I1 = 0I2 = 1m
TR = 5n -
+
W1
ION = 0uAIOFF = 1mAW
I212
0
D2Dbreak
U12SJ655
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Capacitance Characteristic
Simulation Result
VSD(V) Cbd(pF)
Error(%) Measurement Simulation
1.0 220.000 221.000 0.45
2.0 175.000 174.000 -0.57
5.0 114.000 115.000 0.88
10.0 78.000 79.000 1.28
15.0 62.500 62.000 -0.80
20.0 52.000 52.500 0.96
25.0 45.000 45.800 1.78
30.0 42.000 41.200 -1.90
Simulation
Measurement
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Time
0.6us 0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us
V(U1:G) V(U1:D)/5
0V
-2V
-4V
-6V
-8V
-10V
-12V
-14V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -6A, VDD= -50V VGS=0/-10V
Measurement Simulation Error(%)
td(on) ns 17.000 17.276 1.62
0
VDD-50Vdc
V2TD = 1u
TF = 5nPW = 10uPER = 20u
V1 = 0
TR = 5n
V2 = 20
U12SJ655
L2
50nH
R2
50
R1
50
L1
30nH
RL
8.33
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V2
-5V1
0
0
V3
0Vdc
U12SJ655
V_V2
0V -0.5V -1.5V -2.5V -3.5V -4.5V
I(V3)
0A
-5A
-10A
-15A
-20A
-25A
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS=-3V
-4
-6 -10
- 8
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VSDU12SJ655
0
Vsense
0Vdc
V_VSD
0.3V 0.6V 0.9V 1.2V
I(Vsense)
1.0mA
10mA
100mA
1.0A
10A
BODY DIODE SPICE MODEL Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
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Comparison Graph Circuit Simulation Result
Simulation Result
IDR(-A) VSD (-V)
%Error Measurement Simulation
0.001 0.514 0.514 0.02
0.010 0.580 0.579 -0.17
0.100 0.645 0.646 0.16
1.000 0.720 0.721 0.14
2.000 0.750 0.750 0.04
5.000 0.800 0.804 0.50
10.000 0.870 0.865 -0.57
20.000 0.950 0.952 0.21
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V1TD = 1.12us
TF = 10nsPW = 10usPER = 100us
V1 = -9.4v
TR = 10ns
V2 = 10.6v
R1
50
0
U1D2SJ655_P
Time
10.2us 10.6us 11.0us 11.4us 11.8us 12.2us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 40.000 40.573 1.43
trb ns 30.000 30.043 0.14
trr ns 70.000 70.616 0.88
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Reverse Recovery Characteristic Reference
Trj= 40.00 (ns) Trb= 30.00 (ns) Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement
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R1
0.001m
V1
0Vdc
0
U1
2SJ655
R2
100MEG
V_V1
0V -10V -20V -30V -40V -50V
I(R1)
0A
-2mA
-4mA
-6mA
-8mA
-10mA
ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
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Zener Voltage Characteristic Reference