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1

COMPONENTS: TRANSISTOR

PART NUMBER: 2SC5823-TL-E

MANUFACTURER: SANYO

Device Modeling Report

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

2

TRANSISTOR MODEL

PSpice model parameter

Model description

IS Saturation Current

BF Ideal Maximum Forward Beta

NF Forward Current Emission Coefficient

VAF Forward Early Voltage

IKF Forward Beta Roll-off Knee Current

ISE Non-ideal Base-Emitter Diode Saturation Current

NE Non-ideal Base-Emitter Diode Emission Coefficient

BR Ideal Maximum Reverse Beta

NR Reverse Emission Coefficient

VAR Reverse Early Voltage

IKR Reverse Beta Roll-off Knee Current

ISC Non-ideal Base-Collector Diode Saturation Current

NC Non-ideal Base-Collector Diode Emission Coefficient

NK Forward Beta Roll-off Slope Exponent

RE Emitter Resistance

RB Base Resistance

RC Series Collector Resistance

CJE Zero-bias Emitter-Base Junction Capacitance

VJE Emitter-Base Junction Potential

MJE Emitter-Base Junction Grading Coefficient

CJC Zero-bias Collector-Base Junction Capacitance

VJC Collector-base Junction Potential

MJC Collector-base Junction Grading Coefficient

FC Coefficient for Onset of Forward-bias Depletion Capacitance

TF Forward Transit Time

XTF Coefficient for TF Dependency on Vce

VTF Voltage for TF Dependency on Vce

ITF Current for TF Dependency on Ic

PTF Excess Phase at f=1/2pi*TF

TR Reverse Transit Time

EG Activation Energy

XTB Forward Beta Temperature Coefficient

XTI Temperature Coefficient for IS

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3

Ic

Vce

VAR

(X1,Y1)

(X2,Y2)

Y=aX+b

Reverse Early Voltage Characteristic

Reverse

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4

Reverse DC Beta Characteristic (Ie vs. hFE)

Measurement

Simulation

Emitter Current

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5

Ic

VceVAF

(X1,Y1)

(X2,Y2)

Y=aX+b

Forward Early Voltage Characteristic

Forward

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6

C-B Capacitance Characteristics E-B Capacitance Characteristics

Measurement

Simulation

Measurement

Simulation

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7

V1

5VdcI1

0Adc

0

v sence

0Vdc

Q1Q2SC5823-TL-E

I(vsence)

1.0mA 10mA 100mA 1.0A 3.0A

I(vsence)/ IB(Q1)

1.0

10

100

300

Transistor hFE-IC Characteristics

Circuit Simulation Result

Evaluation Circuit

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8

Comparison Graph

IC(A) hFE

Error(%) Measurement Simulation

0.001 21.500 21.077 -1.967

0.002 24.500 23.711 -3.220

0.005 29.000 27.575 -4.914

0.010 32.000 30.709 -4.034

0.020 35.000 33.847 -3.294

0.050 38.000 37.191 -2.129

0.100 39.000 37.837 -2.982

0.200 36.000 34.761 -3.442

0.500 21.500 22.301 3.726

1.000 9.955 10.429 4.761

1.500 5.995 5.699 -4.932

Circuit Simulation Result

Simulation Result

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9

VC

I1

0Adc

0

F1

F5

Q1Q2SC5823-TL-E

IC(Q1)

10mA 100mA 1.0A 10A

V(Q1:c)

1.0mV

10mV

100mV

1.0V

10V

VCE(Sat)-IC Characteristics

Circuit Simulation Result

Evaluation Circuit

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10

Comparison Graph

IC(A) VCE(sat)(V)

Error(%) Measurement Simulation

0.01000 0.05200 0.05220 0.38269

0.02000 0.05000 0.04784 -4.32200

0.05000 0.05100 0.05075 -0.49216

0.10000 0.06300 0.06381 1.28889

0.20000 0.09000 0.09308 3.42333

0.50000 0.18000 0.18057 0.31500

1.00000 0.34500 0.32858 -4.75826

Circuit Simulation Result

Simulation Result

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11

VC

I1

0Adc

0

F1

F5

Q1Q2SC5823-TL-E

IC(Q1)

10mA 100mA 1.0A 3.0A

V(Q1:b)

100mV

1.0V

10V

VBE(Sat)-IC Characteristics

Circuit Simulation Result

Evaluation Circuit

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12

Comparison Graph

IC(A) VBE(sat)(V)

Error(%) Measurement Simulation

0.01000 0.670 0.649 -3.203

0.02000 0.695 0.671 -3.383

0.05000 0.720 0.707 -1.762

0.10000 0.750 0.742 -1.057

0.20000 0.800 0.789 -1.386

0.50000 0.900 0.888 -1.385

1.00000 1.020 1.019 -0.118

1.50000 1.130 1.137 0.619

Circuit Simulation Result

Simulation Result

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13

V1TD = 8uTF = 100nsPW = 20usPER = 500us

V1 = 5

TR = 100ns

V2 = -5

R1

18.4

R2

12.7

0

VCC

200

D1

D1N5817D2

D1N5817

RL

200

L1

30nH

1 2

L2

30n

1 2 Q1Q2SC5823-TL-E

Time

0s 2us 4us 6us 8us 10us 12us 14us 16us 18us

1 V(L2:2) 2 V(Q1:c)

0V

10V

-5V

1

0V

50V

100V

150V

200V

250V

300V2

>>

Switching Characteristics Circuit simulation result

Evaluation circuit

Simulation result

Measurement Simulation %Error

tf (us) 0.2500 0.2495 -0.1836

tstg (us) 2.5000 2.5006 0.0240

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14

V1

10Vdc

0

I1

0Adc

Q1Q2SC5823-TL-E

V_V1

0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V

IC(Q1)

0A

0.2A

0.4A

0.6A

0.8A

1.0A

1.2A

1.4A

1.6A

1.8A

2.0A

Output Characteristics

Circuit Simulation Result

Evaluation Circuit

IB=0A

10mA

100mA

150mA

200mA

20mA

50mA

250mA

300mA

350mA

400mA 450mA

500mA

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15

Output Characteristics Reference