SPICE MODEL of TPCP8203 (Standard+BDS Model) in SPICE PARK

All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: Power MOSFET (Model Parameters) PART NUMBER: TPCP8203 MANUFACTURER: TOSHIBA Body Diode (Standard Model) / ESD Protection Diode


Circuit Configuration

MOSFET MODEL

Pspice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Modility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility

6

31 4

5

2

8 7


6

8

10

12

14

16

18

20

0 2 4 6 8 10 12 14 16 18

DRIAN CURRENT ID (A)

TR

AN

SC

ON

DU

CT

AN

CE

GF

S(s

) Measurement

Simulation

Transconductance Characteristic

Circuit Simulation Result

Comparison table

Id(A) gfs

Error(%) Measurement Simulation

2 7.355 7.407 0.719

4 10.186 10.127 -0.583

5 11.255 11.186 -0.615

8 13.756 13.722 -0.250

10 15.050 14.933 -0.777

12 16.345 16.282 -0.387

16 18.555 18.349 -1.112


V_VGS

0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V 8.0V

I(V2)

0A

2A

4A

6A

8A

10A

12A

14A

16A

Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit

open

R1

100MEG

V3

0Vdc

0

open

open

VGS

0Vdc

U1 TPCP8203

open

V1

10Vdc

open

0


0

2

4

6

8

10

12

14

16

18

2.5 2.75 3 3.25 3.5 3.75 4 4.25

Gate - Source Voltage VGS (V)

Dra

in C

urr

en

t ID

(A

)

Measurement

Simulation

Comparison Graph Circuit Simulation Result

Simulation Result

ID(A) VGS(V)

Error (%) Measurement Simulation

1 2.750 2.760 0.378

2 2.930 2.921 -0.311

4 3.150 3.154 0.121

5 3.245 3.250 0.145

8 3.502 3.495 -0.191

10 3.640 3.636 -0.110

12 3.770 3.767 -0.082

16 3.988 4.002 0.361


V_Vds

0V 20.6mV 41.3mV 61.9mV 82.6mV 103.0mV

I(V3)

0A

0.48A

0.96A

1.44A

1.92A

2.40A

Rds(on) Characteristic


Evaluation circuit

Simulation Result

ID=2.4A, VGS=4.5V Measurement Simulation Error (%)

RDS (on) m 43.00 43.00 0.000

V3

0Vdc

open

open

VDS

10Vdc

VGS

10Vdc

open

open

R1

100MEG

0

U1 TPCP8203

0

open


Time*1mA

0 2n 4n 6n 8n 10n 12n 14n 16n 18n 20n

V(W1:3)

0V

2V

4V

6V

8V

10V

12V

14V

16V

Gate Charge Characteristic


Evaluation circuit

Simulation Result

VDD=32V,ID=4.7A, VGS=10V Measurement Simulation Error (%)

Qgs ns 2.500 2.492 -0.320

Qgd ns 4.000 3.938 -1.550

Qg ns 16.000 12.308 -23.075

open

Vsense

open

U1 TPCP8203

open

0

Ropen

100MEG

open

DbreakD1

I2TD = 0

I1

4.7Adc

0

open-

+W1

ION = 0AIOFF = 1mA

W

VD32Vdc


Capacitance Characteristic

\Simulation Result

VDS(V) Cbd (pF)

Error(%) Measurement Simulation

1 70.000 69.890 -0.157

2 65.000 66.549 2.382

5 55.000 54.586 -0.753

10 45.000 44.026 -2.165

20 32.000 33.124 3.511

40 22.000 21.998 -0.009

Simulation

Measurement


Time

0.96us 0.98us 1.00us 1.02us 1.04us 1.06us 1.08us

V(2)*1 V(3)/2

-2V

0V

2V

4V

6V

8V

10V

12V

Switching Time Characteristic


Evaluation circuit

Simulation Result

ID=2.4A, VDD=20V VGS=0/10V

Measurement Simulation Error(%)

td (on) ns 15.00 14.98 -0.13

VD20VdcU1 TPCP8203

0

RL

8.33

0

L3

30nH

R1

4.7

openR2

4.7

Ropen

100MEG

2

3

V1TD = 1u

TF = 10nPW = 10uPER = 10m

V1 = 0

TR = 10n

V2 = 20

open

open

open open


V_V1

0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V 5.0V

I(V3)

0A

2A

4A

6A

8A

10A

12A

14A

16A

18A

20A

Output Characteristic


Evaluation circuit

VGS=3V

3.6V

10V

8.0V

6.0V 4.0V

3.8V

3.2V

3.4V

V1

10Vdc

V3

0Vdc

open

VGS

0Vdc

open open

open

0

R1

100MEG

open

0

U1 TPCP8203

4.5V

5V


V_V1

0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V

I(X_U1.D_D1)

100mA

1.0A

10A

100A

BODY DIODE Forward Current Characteristic


Evaluation Circuit

open

0

R1

0.01m open

open

V1

0Vdc

open

Ropen

100MEG

open

open

U1 TPCP8203

0


0.1

1

10

100

0 0.2 0.4 0.6 0.8 1 1.2

Drain - Source Voltage VDS (V)

Dra

in r

evers

e C

urr

en

t -

IDR

(A

)

Measurement

Simulation

Comparison Graph Circuit Simulation Result

Simulation Result

IDR(A) VDS(V)

%Error Measurement Simulation

0.1 0.640 0.636 -0.644

0.2 0.660 0.664 0.561

0.5 0.700 0.702 0.286

1 0.735 0.735 0.054

2 0.780 0.774 -0.756

5 0.845 0.846 0.071

10 0.930 0.932 0.258

20 1.080 1.079 -0.083


Time

0.94us 0.98us 1.02us 1.06us 1.10us 1.14us

I(R1)

-400mA

-300mA

-200mA

-100mA

-0mA

100mA

200mA

300mA

400mA

Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation

Measurement Simulation Error (%)

trj ns 13.60 13.58 -0.147

open

open

Ropen

1G

open

0

open

open

R1 50

U1 TPCP8203

0

V1

TD = 6n

TF = 5.7nsPW = 1usPER = 50us

V1 = -9.5V

TR = 10ns

V2 = 10.6V

open


Reverse Recovery Characteristic Reference

Trj=13.60(ns) Trb=12.80(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example

Measurement


V_V1

0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V

I(R1)

0A

1mA

2mA

3mA

4mA

5mA

6mA

7mA

8mA

9mA

10mA

ESD PROTECTION DIODE Zener Voltage Characteristic


Evaluation Circuit

0

Ropen1

100MEGopen1

U1 TPCP8203

open3

open3

Ropen3

100MEG

open2

0open2

V1

0Vdc

0

open3

0

Ropen2

100MEG

R1

0.01m

open3

open1

open3


Zener Voltage Characteristic Reference

Technology

SPICE MODEL of TPCP8203 (Standard+BDS Model) in SPICE PARK