SPICE MODEL of SSM3K37CT (Professional+BDP Model) in SPICE PARK

All Rights Reserved Copyright (c) Bee Technologies Inc. 2010

1

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: MOSFET (Professional Model) PART NUMBER: SSM3K37CT MANUFACTURER: TOSHIBA REMARK: Body Diode (Professional Model)


2

MOSFET MODEL

PSpice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Mobility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility


3

0

100

200

300

400

500

600

0 100 200 300 400

gfs

(m

S)

Drain current ID (mA)

Measurement

Simulation

Transconductance Characteristics

Circuit Simulation Result

Comparison table

Id(mA) gfs (ms)

%Error Measurement Simulation

20 113.000 117.678 4.14

50 190.000 185.972 -2.12

100 275.000 262.816 -4.43

200 365.000 371.284 1.72

400 500.000 524.276 4.86


4

V1

0Vdc

V2

3

0

V3

0Vdc

U1SSM3K37CT

V_V1

0V 1.0V 2.0V 3.0V

I(V3)

1.0mA

10mA

100mA

1.0A

Vgs-Id Characteristics

Circuit Simulation result

Evaluation circuit


5

10

100

1000

0 1 2 3

Dra

in c

urr

en

t ID

(mA

)

Gate-source voltage VGS (V)

Measurement

Simulation

Comparison Graph Circuit Simulation Result

Simulation Result

ID(mA) VGS(V)


10 0.765 0.730 -4.56

20 0.850 0.830 -2.39

50 0.990 1.027 3.76

100 1.200 1.250 4.17

200 1.570 1.565 -0.30

400 2.110 2.012 -4.65


6

0

V3

0Vdc

VDS

0VdcV1

4.5

U1SSM3K37CT

V_VDS

0V 20mV 40mV 60mV 80mV 100mV 120mV 140mV 160mV

I(V3)

0A

20mA

40mA

60mA

80mA

100mA

Rds(on) Characteristics


Evaluation circuit

Simulation Result

ID = 0.1A, VGS = 4.5V Measurement Simulation %Error

RDS (on) 1.650 1.650 0.00


7

VDD

16

I1TD = 0

TF = 5nPW = 600uPER = 1000u

I1 = 0I2 = 1m

TR = 5n -

+

W1

ION = 0uAIOFF = 1mAW

I2

200m

0

D2

DbreakU1SSM3K37CT

Time*1mA

0 0.1n 0.2n 0.3n 0.4n 0.5n 0.6n 0.7n 0.8n 0.9n

V(W1:3)

0V

2.0V

4.0V

6.0V

8.0V

Gate Charge Characteristics Circuit Simulation result

Evaluation circuit

Simulation Result

VDD=16V, ID=0.2A, VGS=4V

Measurement Simulation %Error

Qgs nC 0.060 0.060 0.00

Qgd nC 0.088 0.090 2.27

Qg nC 0.440 0.442 0.45


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Gate Charge Characteristics Reference


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Capacitance Characteristics

Simulation Result

VDS (V) Cbd (pF)


0.1 6.000 5.985 -0.25

0.2 5.300 5.333 0.62

0.5 4.200 4.169 -0.74

1 3.200 3.220 0.63

2 2.400 2.375 -1.04

5 1.500 1.517 1.13

10 1.050 1.060 0.95

Simulation

Measurement


10

0

VDD10Vdc

V2TD = 1u

TF = 5nPW = 10uPER = 20u

V1 = 0

TR = 5n

V2 = 5

L2

30nH

R2

50

R1

50

L1

30nH

U1SSM3K37CT

RL

98

Time

0.92us 0.96us 1.00us 1.04us 1.08us 1.12us

V(U1:G)*4 V(U1:D)

0V

2V

4V

6V

8V

10V

12V

14V

Switching Time Characteristics Circuit Simulation result

Evaluation circuit

Simulation Result

ID=0.1A, VDD=10V VGS=2.5/0V

Measurement Simulation %Error

ton ns 18.000 18.089 0.49

VGS

ID


11

V2

1V1

0

0

V3

0Vdc

U1SSM3K37CT

V_V2

0V 0.2V 0.4V 0.6V 0.8V 1.0V

I(V3)

0A

100mA

200mA

300mA

400mA

500mA

Output Characteristics


Evaluation circuit

VGS=1.2V

4.5

1.8

2.5

1.5

10


12

VDS

0

Vsense

0Vdc

U1SSM3K37CT

V_VDS

0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V -1.4V

I(Vsense)

100uA

1.0mA

10mA

100mA

1.0A

Forward Current Characteristics


Evaluation Circuit


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0.1

1

10

100

1000

0 0.5 1 1.5

Dri

an

re

ve

rse

cu

rre

nt I D

R(m

A)

Drain - source voltage-VDS (V)

Measurement

Simulation

Comparison Graph Circuit Simulation Result

Simulation Result

IDR(mA) -VDS(V)


0.1 0.570 0.5705 0.10

1 0.648 0.6487 0.11

10 0.730 0.7310 0.13

20 0.760 0.7593 -0.09

50 0.805 0.8041 -0.11

100 0.845 0.8460 0.12

200 0.895 0.8947 -0.03

400 0.950 0.9500 0.00


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V1

TD = 30ns

TF = 10nsPW = 20usPER = 50us

V1 = -9.25v

TR = 10ns

V2 = 10.90v

R1

50

0

U1DSSM3K37CT_P

Time

19.88us 19.96us 20.04us 20.12us 20.20us 20.28us

I(R1)

-400mA

-300mA

-200mA

-100mA

-0mA

100mA

200mA

300mA

400mA

Reverse Recovery Characteristics Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation

Parameter Unit Measurement Simulation %Error

trj ns 12.800 12.920 0.94

trb ns 14.400 14.595 1.35

trr ns 27.200 27.515 1.16


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Reverse Recovery Characteristics Reference

Trj= 12.80 (ns) Trb= 14.40 (ns) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example

Measurement


16

R1

0.001m

V1

0Vdc

0

R2

100MEG

U1SSM3K37CT

V_V1

0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V

I(R1)

0A

1mA

2mA

3mA

4mA

5mA

6mA

7mA

8mA

9mA

10mA

ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristics


Evaluation Circuit


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Zener Voltage Characteristics Reference

Technology

SPICE MODEL of SSM3K37CT (Professional+BDP Model) in SPICE PARK