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ペロブスカイト型の電荷ダイナミクス
電気通信大学大学院理工学研究科 先進理工学専攻
沈 青
Organic-Inorganic Hybrid Solar Cells
Hole
transport
material
(HTM)
Electron
transport
material
(ETM)
h+ e-
Absorber
Absorber
(dye, quantum dots (QDs), perovskite)
Schematic illustration of structure of an
organic-inorganic hybrid solar cell (OIHSC)
Solar light
Dye: 1% (1998)1) → 7.2% (2011)2)
Quantum dots (QDs): 5% (2010) 3) → 6.3% (2012) 4)
Perovskite lead iodide: 9.7%(2012)5) → 20.1%(2014)6)
Efficiency of OIHSCs with different absorbers:
1) M. Gratzel et al., Nature 1998, 395, 583−585. 2) M. Gratzel et al., J. Am. Chem. Soc. 2011, 133, 18042−18045. 3) S. I. Seok et al., Nano Lett. 2010, 10, 2609−2612.
Improvements in absorption of dye and conductivity of HTM
Sb2S3 and improvement in HTM
4) S. I. Seok et al., Nano Lett. 2012, 12, 1863−1867. 5) N. G. Park et al., Sci. Rep. 2012, 2, 591. 6) http://www.nrel.gov/ncpv/
Halogen anion
CH3NH3+
Pb2+
Organohalide Lead Perovskites
Organic-Inorganic Hybrid Solar Cells
Dye: 1% (1998)1) → 7.2% (2011)2)
Quantum dots (QDs): 5% (2010) 3) → 6.3% (2012) 4)
Perovskite lead iodide: 9.7%(2012)5) → 20.1%(2014)6)
Efficiency of OIHSCs with different absorbers:
Improvements in absorption of dye and conductivity of HTM
Sb2S3 and improvement in HTM
Halogen anion
CH3NH3+
Pb2+
Organohalide Lead Perovskites
Why the efficiency of perovskite-based OIHSCs can be so high?
Hole
transport
material
(HTM)
Electron
transport
material
(ETM)
h+ e-
Absorber
Absorber
(dye, quantum dots (QDs), perovskite)
Schematic illustration of structure of an
organic-inorganic hybrid solar cell (OIHSC)
Solar light
(1)high optical absorption coefficient N719: α = 1500 cm-1 at 540 nm; CH3NH3PbI3: α = 15000 cm-1 at 550 nm (2)long electron and hole diffusion length in the perovskite CH3NH3PbI3: 100 nm; CH3NH3PbI3-xClx: > 1000 nm longer lifetimes of photoexcited carriers in Pb perovskie
S. D. Stranks et al., Sicence 342, 341 (2013); G. C. Xing et al., Science 342, 344 (2013).
Unique properties of Pb perovskite for solid state solar cells
(1)high optical absorption coefficient N719: α = 1500 cm-1 at 540 nm; CH3NH3PbI3: α = 15000 cm-1 at 550 nm (2)long electron and hole diffusion length in the perovskite CH3NH3PbI3: 100 nm; CH3NH3PbI3-xClx: > 1000 nm longer lifetimes of photoexcited carriers in Pb perovskie
S. D. Stranks et al., Sicence 342, 341 (2013); G. C. Xing et al., Science 342, 344 (2013).
Unique properties of Pb perovskite for solid state solar cells
1. What is the time scale of charge separation and recombination and which interface do they occur?
2. How about charge separation and charge collection efficiency? 3. How about surface engineering (surface passivation) influence
charge separation and collection efficiency?
Some open questions for perovskite-based solar cells
Our studies on Charge Separation and Recombination in Perovskite Solar cells
Ag/Au
FTO glass
Dense TiO2
Spiro-OMeTAD
PorousTiO2/Perovskite
(1) TiO2/CH3NH3PbIxCl3-xl /Spiro-OmeTAD (one step)
◇ surface passivation of TiO2 surface with Y2O3 ChemPhysChem, Vol. 15, 1062 (2014).
◇ Dependence on TiO2 morphology Phys. Chem. Chem. Phys., Vol. 16, 19984 (2014).
(2) TiO2/CH3NH3PbI3/Spiro-OmeTAD (two step)
◇ Interface engineering by inserting HOCO-RNH3 +I- anchor group at Perovskite/TiO2 interfaces J. Phys. Chem. C, Vol. 118, 16651 (2014).
(3) TiO2/CH3NH3SnxPb1-xI3 /Spiro-OmeTAD (one step) ◇ Carrier dynamics depends greatly on the ratio x of Sn and Pb
Submitted for publication
τei: electron injection time;
τreg: hole transfer time τ1: life time of photoexcited
electron-hole pairs τrec1: recombination time of electrons
in TiO2 with holes in sensitizer
τrec2: recombination time of electrons
in TiO2 with holes in HTM
τet: electron transport time in ETM
τht: hole transport time in HTM
The charge separation and recombination dynamics from sub-picoseconds
to milliseconds can be detected with a transient absorption (TA) method.
Charge Separation and Recombination in OIHSC One Key for Improving the Efficiency
Absorber
Recombination in CH3NH3PbIxCl3-x on Y2O3
0 500 1000 1500 2000 2500 3000
-1.0
-0.5
0.0 0.9 J/cm2
1.8 J/cm2
Norm
aliz
ed
A
Time (ps)
Without Spiro
Probe at 775 nm
Probe at 785 nm
34 ps (9%)
>> ns (91%)
ChemPhysChem, Vol. 15, 1062 (2014).
Phys. Chem. Chem. Phys., Vol. 16, 19984 (2014).
E
CH3NH3PbI2Cl
e-
h+
Y2O3
34 ps (9%)
A few μs – 10 μs (91%)
(a) Three recombination processes: (1) 34 ps (9%) (2) 3.7 μs (64%) (3) 60 μs (27%)
10-7 10-6 10-5 10-4
-1.0x10-4
0.0
1.0x10-4
A
Experimental Fitting
Time (s)
3.7±0.1 μs (70%) 60±1 μs (30%)
Charge separation at CH3NH3PbIxCl3-x /Spiro-OMeTAD interface
Spiro
OMeTAD
E
e-
h+
Y2O3
16 ns
0 500 1000 1500 2000 2500 3000
-1.0
-0.5
0.0 without Spiro with Spiro fitting
Nor
mal
ized
A
Time (ps)
With Spiro
Without Spiro
Hole injection time: 16 ns
Probe at 775 nm
CB
CB
VB
VB
τ: 16 ns
Phys. Chem. Chem. Phys., Vol. 16, 19984 (2014).
There is charge separation at CH3NH3PbIxCl3-x/ Spiro-OMeTAD interface
CH3NH3PbIxCl3-x
charge recombination at CH3NH3PbIxCl3-x /Spiro-OMeTAD interface
Spiro
OMeTAD
E
e-
h+
Y2O3
0.37 μs
Recombination time: 0.37 μs
CB
CB
VB
VB
There is charge separation at CH3NH3PbClI2/ Spiro-OMeTAD interface
CH3NH3PbIxCl3-x
τ: 0.37 μs
1.0x10-6 1.5x10-6 2.0x10-6 2.5x10-6
-5.0x10-5
0.0
5.0x10-5
1.0x10-4
A
Experimental Fitting
Time (s)
With Spiro
Probe at 1310 nm
Phys. Chem. Chem. Phys., Vol. 16, 19984 (2014).
Probe light : 1310 nm Monitor holes in Spiro
Charge separation and recombination at CH3NH3PbIxCl3-x /Spiro-OMeTAD interface on Y2O3
E
CH3NH3PbI2Cl
e-
h+
Y2O3
34 ps (9%)
A few μs – 10 μs (91%)
(a)
Spiro
OMeTAD
E
CH3NH3PbClI2
e-
h+
Y2O3
16 ns
0.37 μs
(b)
Phys. Chem. Chem. Phys., Vol. 16, 19984 (2014).
Charge separation at CH3NH3PbIxCl3-x/TiO2 interface
0 200 400 600 800 1000
-1.0
-0.5
0.0 CH
3NH
3PbI
xCl
3-x/TiO
2
CH3NH
3PbI
xCl
3-x/Y
2O
3
fitting
Norm
aliz
ed
A
Delay time (ps)
Y2O3
TiO2
TiO2
e-
h+
1.8 ns
E CB
CB
VB
VB
There is electron injection from CH3NH3PbIxCl3-x to TiO2.
τ: 1.8 ns
ChemPhysChem, Vol. 15, 1062 (2014).
CH3NH3PbIxCl3-x
Phys. Chem. Chem. Phys., Vol. 16, 19984 (2014).
Charge separation at CH3NH3PbIxCl3-x/TiO2 interface
0 200 400 600 800 1000
-1.0
-0.5
0.0 CH
3NH
3PbI
xCl
3-x/TiO
2
CH3NH
3PbI
xCl
3-x/Y
2O
3
fitting
Norm
aliz
ed
A
Delay time (ps)
Y2O3
TiO2
TiO2
e-
h+
1.8 ns
E CB
CB
VB
VB
τ: 1.8 ns
CH3NH3PbIxCl3-x
τei τ1 ≥μs
ηET= (1/τei)/(1/τei+1/τ1) ηET: close to 100%
Electron injection efficiency ηET
Phys. Chem. Chem. Phys., Vol. 16, 19984 (2014).
8x10-7 10-6 1.2x10-6 1.4x10-6-2.0x10-4
0.0
2.0x10-4
4.0x10-4
Experimental Fitting
A
Time (s)
Charge recombination at CH3NH3PbIxCl3-x/TiO2 interface
τ: 0.14 μs
E
TiO2
CH3NH3PbIxCl3-x
e-
h+ 0.14 μs
CB
VB
CB
VB
ChemPhysChem, Vol. 15, 1062 (2014).
Probe light wavelength: 658 nm Monitor electrons in TiO2
Phys. Chem. Chem. Phys. (2014). DOI: 10.1039/C4CP03073G.
T. Yoshihara et al., The Journal of Physical Chemistry B, 2004, 108, 3817-3823.
Physical Chemistry Chemical Physics, 2014, 16, 5242; 2013, 15, 11006; 2014, 16, 5774.
8x10-7 10-6 1.2x10-6 1.4x10-6-2.0x10-4
0.0
2.0x10-4
4.0x10-4
Experimental Fitting
A
Time (s)
Charge recombination at CH3NH3PbIxCl3-x/TiO2 interface
τ: 0.14 μs
E
TiO2
CH3NH3PbIxCl3-x
e-
h+ 0.14 μs
CB
VB
CB
VB
Probe light wavelength: 658 nm Monitor electrons in TiO2
16 ns τrec1 τhi
Spiro
OMeTAD
ηHT = (1/τhi)/(1/τhi + 1/τrec1) ηHT: about 90%
Hole injection efficiency ηHT
Charge separation efficiency: ηCS = ηET ηHT ≈ 90%
Charge recombination at TiO2/Spiro-OMeTAD interface
1E-6 1E-5 1E-4-1.0x10-3
0.0
1.0x10-3
ΔA
Time (s)
Without Spiro
Probe light wavelength: 1310 nm Monitor lifetime of holes in Spiro
1E-6 1E-5 1E-4-1.0x10-3
0.0
1.0x10-3
ΔA
Time (s)
Experimental fitting
With Spiro τ: 60 μs
E
TiO2
e-
h+
Spiro
OMeTAD
60 μs
CB
VB
CB
VB
CH3NH3PbIxCl3-x
Phys. Chem. Chem. Phys., Vol. 16, 19984 (2014).
R. Plass et al., J. Physical Chemistry B, 2002, 106, 7578.
Charge recombination at TiO2/Spiro-OMeTAD interface
1E-6 1E-5 1E-4-1.0x10-3
0.0
1.0x10-3
ΔA
Time (s)
Without Spiro
Probe light wavelength: 1310 nm Monitor lifetime of holes in Spiro
1E-6 1E-5 1E-4-1.0x10-3
0.0
1.0x10-3
ΔA
Time (s)
Experimental fitting
With Spiro τ: 60 μs
E
TiO2
e-
h+
Spiro
OMeTAD
60 μs
CB
VB
CB
VB
CH3NH3PbIxCl3-x
Phys. Chem. Chem. Phys., Vol. 16, 19984 (2014).
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
0.0 0.2 0.4 0.6 0.8Cu
rre
nt
De
nsi
ty /
mA
cm-2
voltage / V
efficiency: 6.59%
Relationship between Carrier Dynamics and Photovoltaic Performance
E
TiO2
CH3NH3PbIxCl3-x
e-
h+
1.8 ns
0.14 μs Spiro
OMeTAD
60 μs
0.0
0.2
0.4
0.6
0.8
1.0
350 450 550 650 750
IPC
E
Wavelength / nm
at 470 nm: IPCE=59%
IPCE=ηabsorption ηCS ηCC
ηCS = ηET ηHT ≈ 90%
ηabsorption ≈ 95%
ηCC < 70%
The problem: smaller τrec2 smaller ηCC.
16 ns
Jsc: 11.8 mA/cm2
Voc: 0.79 V
FF: 0.71
CB
VB
CB
VB
τrec2
Phys. Chem. Chem. Phys., Vol. 16, 19984 (2014).
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
0.0 0.2 0.4 0.6 0.8
Cu
rre
nt
De
nsi
ty /
m
Acm
-2
voltage / V
Effects of surface treatment on carrier dynamics and photovoltaic performance
τrec2: 60 μs 180 μs Jsc: 11.8 mA/cm2 16.5 mA/cm2; efficiency: 6.59% 7.53%
After surface treatment of TiO2
E
TiO2
CH3NH3PbIxCl3-x
1.8 ns
0.14 μs
TiO2 Y2O3
CH3NH3PbIxCl3-x
e-
h+
3.3 ns
1 μs
Spiro
OMeTAD
E
60 μs
180 μs
Spiro
OMeTAD
Without surface treatment
16 ns
16 ns
With surface treatment
CB
VB
CB
VB
CB
VB
CB
VB
ChemPhysChem, Vol. 15, 1062 (2014)
e-
h+
h+
h+
0.0
4.0
8.0
12.0
16.0
20.0
0.0 0.2 0.4 0.6 0.8
Cu
rren
t D
en
sity
/ m
Acm
-2
Volatage / V
cell B
cell A
(b)
Effects of TiO2 nanoparticle sizes on carrier dynamics and Photovoltaic Performance
E
TiO2
CH3NH3PbI2Cl
e-
h-
1.8 ns
0.14 μs
CH3NH3PbI2Cl
e-
h-
0.7 ns
0.13 μs
Spiro
OMeTAD
60 μs
600 μs
Spiro
OMeTAD
16 ns
16 ns
TiO2 size: 18 nm 30 nm 18 nm
30 nm
τrec2: 60 μs 600 μs IPCE(at 470nm):59% 85% Jsc: 11.8 mA/cm2 17.6 mA/cm2; efficiency: 6.59% 9.54%
TiO2: 18 nm
TiO2: 30 nm E
TiO2
(ηCC ≈ 100% )
CB
VB
CB
VB
CB
VB
CB
VB
Summary
(1) The carrier lifetime of perovskite CH3NH3PbIxCl3-x is as large as μs.
(2) Charge separation efficiency is as high as 90% for
TiO2/CH3NH3PbIxCl3-x/Spiro OMeTAD. (3) The key factor for improving the efficiency is to decrease
the recombination at TiO2/Spiro OMeTAD interface, which resulted in a smaller charge collection efficiency.
How to suppress the recombination is a key and surface passivation of TiO2 and interface engineering are important.
Acknowledgment
This research was supported by the CREST program of Japan Science and Technology Agency (JST).
九州工業大学:早瀬修二先生、尾込裕平先生 宮崎大学:吉野賢二先生 電通大:豊田太郎先生