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T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
30 years of ALDTuomo Suntola
Key tool for finding the ALE in 1974
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
Key tool for finding the ALE in 1974
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
Tool for the demonstration of ALE in 1974
ALE growth of ZnS in Aug/Sept 1974
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
ALE growth of ZnS in Aug/Sept 1974
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
Zn S
ALE growth of ZnS in Aug/Sept 1974
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
Zn S
ALE growth of ZnS in Aug/Sept 1974
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
Zn S
ALE growth of ZnS in Aug/Sept 1974
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
0.4
μm
0.6
0.2
0100 20 30 minutes
Hexagonal ZnS: monolayer 3.13 Ån=2.36
2 c/s
Zn S
320 °C
10−4 torr
360 °C
4x10−5 torr
3x10−3 torr2x10−2 torr100 °C
ALE growth of ZnS in Aug/Sept 1974
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
2 c/s
Zn S
0.4
μm
0.6
0.2
0100 20 30
Hexagonal ZnS: monolayer 3.13 Ån=2.36
minutes
320 °C
10−4 torr
360 °C
4x10−5 torr
3x10−3 torr2x10−2 torr100 °C
ALE growth of ZnS in Aug/Sept 1974
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
0.4
μm
0.6
0.2
0100 20 30
Hexagonal ZnS: monolayer 3.13 Ån=2.36
minutes
1/3 x monolayer
2 c/s
Zn S
320 °C
10−4 torr
360 °C
4x10−5 torr
3x10−3 torr2x10−2 torr100 °C
Milestones in ALE-ALD development
Instrumentarium
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
demonstration of ALE for ZnS (Instrumentarium)1974 1980 1990 2000 2010
Lohja
Milestones in ALE-ALD development
Instrumentarium
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
demonstration of ALE for ZnS (Instrumentarium)
exchange reactions for ZnS and oxidestravelling wave reactor (Lohja)
1974 1980 1990 2000 2010
Lohja
Milestones in ALE-ALD development
Instrumentarium
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
Milestones in ALE-ALD development
Instrumentarium
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
Lohja
Structure of thin film electroluminescent display
substrate glass
passivation layer (ion barrier)dielectric layers light emitting layer, ZnS(Mn)
black back layer
passivation layer
electrodes
EL- character module
Milestones in ALE-ALD development
Instrumentarium
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
demonstration of ALE for ZnS (Instrumentarium)
exchange reactions for ZnS and oxides
introduction of ALE-EL device performance
travelling wave reactor (Lohja)
1974 1980 1990 2000 2010
Lohja
Milestones in ALE-ALD development
Instrumentarium
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
Lohja
Milestones in ALE-ALD development
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
InstrumentariumPlanar InternationalLohja
Dr. Ralf Graeffe inspects the new large-area display in 1983
Milestones in ALE-ALD development
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
InstrumentariumPlanar InternationalLohja
Evaporation, sputtering ALD
ALD superiority in EL:- very high dielectric strength of the dielectric layers (Al2O3 + TiO2 )- pinhole free in large area- hexagonal ZnS; high efficiency, bright yellow color
Milestones in ALE-ALD development
Instrumentarium
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
demonstration of ALE for ZnS (Instrumentarium)
exchange reactions for ZnS and oxides
introduction of ALE-EL device performance
production line for flat-panel matrix displays P-250 >> P-400 reactorsCommercial production of ALE-EL panels by Lohja > Planar
travelling wave reactor (Lohja)
introduction of first ALE-EL product
1974 1980 1990 2000
Planar International
2010
Lohja
Milestones in ALE-ALD development
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
InstrumentariumPlanar InternationalLohja
Ulf Stom and Tuomo Suntola look at a prototype of the new EL-display in 1984
Milestones in ALE-ALD development
Instrumentarium
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
demonstration of ALE for ZnS (Instrumentarium)
exchange reactions for ZnS and oxides
introduction of ALE-EL device performance
production line for flat-panel matrix displays P-250 >> P-400 reactorsCommercial production of ALE-EL panels by Lohja > Planar
travelling wave reactor (Lohja)
introduction of first ALE-EL product
1974 1980 1990 2000
Planar International
2010
LohjaElcoteq
Research activities in ALE-ALD
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
Instumentarium, Lohja
ALE and precursor chemistry, Helsinki University of Technology
1974 1980 1990 2000
Search for perfection in thin films for EL,ZnS & dielectrics
University & corporate groups in Japan
Helsinki University of Technology
University groups in the US
ALE & precursor chemistry
Search for perfection in III-V single crystals and super-grid structures
Research activities in ALE-ALD
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
Superlattice by NEC, Japan
Research activities in ALE-ALD
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
ALD Processing window for GaAS in different reactors
2,0
1,5
1,0
0
0,5
300 500 600400 700Process temperature (°C)
Growth rate(ML/cycle)
(c)
(d)
(a) (b)
(e)
Research activities in ALE-ALD
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
Visit to prof. Nishizawa’s MLE-laboratory in Tohoku 1989
Research activities in ALE-ALD
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
ALE conference in Helsinki 1990:From left: Prof. Konagai, Dr. Nykänen†, Dr. Suntola, Prof. Niinistö, Prof. Nishizawa, Prof. & Mrs. Bedair
Elcoteq
Milestones in ALE-ALD development
Instrumentarium
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
demonstration of ALE for ZnS (Instrumentarium)
exchange reactions for ZnS and oxides
introduction of ALE-EL device performance
production line for flat-panel matrix displays P-250 >> P-400 reactorsCommercial production of ALE-EL panels by Lohja > Planar
travelling wave reactor (Lohja)
introduction of first ALE-EL product
introduction of ALE for catalytic surfaces
demonstration of ALE-CdTe solar cell performance
1974 1980 1990 2000
F-120 reactors (Microchemistry)
Microchemistry
Planar International
2010
Lohja
Research goals in ALE-ALD
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
Instumentarium, Lohja
ALE and precursor chemistry, Helsinki University of Technology
1974 1980 1990 2000
Search for perfection in thin films for EL,ZnS & dielectrics
Microchemistry, Helsinki University of Technology
University & corporate groups in Japan
Helsinki University of Technology
University groups in the US
Colorado State University
ALE & precursor chemistry
Search for perfection in III-V single crystals and super-grid structuresHeterogeneous catalysts,advanced surface chemistry
Research goals in ALE-ALD
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
Microchemistry, Helsinki University of Technology Heterogeneous catalysts,advanced surface chemistry
(a) < 250 'C
Si SiO O
TiCl Cl
+ TiCl4 + H2O
TiCl Cl Cl Cl OO O HClO
HCl
SiO
Si Si SiO O OH H
HH H H
Si SiO O
TiTi
SiO
Si Si SiO O OH H
(b) > 300 'C
SiCl
+ TiCl4 + H2O
SiOH
Si Si Si Si
HCl
TiO2nucl
TiO2nucl
HCl
SiO OH H
Si SiO
SiO OH H
Si SiO
Si Si Si SiO O O OH H H
SiOH
SiOH
Starting surface
TiO2 on silica by Suvi Haukka
Research goals in ALE-ALD
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
Microchemistry, Helsinki University of Technology Heterogeneous catalysts,advanced surface chemistry
surfacespiecas/support
saturation density (atoms/nm2)
at top at bottom
precursor A
precursor B
ZrCl4/
WOCl4/
Ni(acac)2/
SiO2
Al2O3
SiO2
Al2O3
Cr(acac)3/
SiO2
Mg(thd)2/
1,44 1,440,04
1,81 1,81 0,05
2,52 2,25 0,11
0,32 0,30 0,00
0,98 0,82 0,08
0,06
0,25
0,04
0,01
0,08
Uniformity of surface saturation in on porous catalyst carriersE-L. Lakomaa, M. Lindblad
Research goals in ALE-ALD
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
Instumentarium, Lohja
ALE and precursor chemistry, Helsinki University of Technology
1974 1980 1990 2000
Search for perfection in thin films for EL,ZnS & dielectrics
Microchemistry, Helsinki University of Technology
University & corporate groups in Japan
Helsinki University of Technology
University groups in the US
Colorado State University
ALE & precursor chemistry
Search for perfection in III-V single crystals and super-grid structuresHeterogeneous catalysts,advanced surface chemistry
Semiconductor equipmentmanufacturers
Ultra-thin and high-k dielectrics for semiconductor devices
Diffusion barriers and passivationlayers enabling conformality in semiconductor devices
Microchemistry, Helsinki University of Helsinki
University groups
Semiconductor manufacturers
Research goals in ALE-ALD
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
Instumentarium, Lohja
ALE and precursor chemistry, Helsinki University of Technology
1974 1980 1990 2000
Search for perfection in thin films for EL,ZnS & dielectrics
Microchemistry, Helsinki University of Technology
University & corporate groups in Japan
Helsinki University of Technology
University groups in the US
Colorado State University
ALE & precursor chemistry
Search for perfection in III-V single crystals and super-grid structuresHeterogeneous catalysts,advanced surface chemistry
Semiconductor equipmentmanufacturers
Ultra-thin and high-k dielectrics for semiconductor devices
Diffusion barriers and passivationlayers enabling conformality in semiconductor devices
Microchemistry, Helsinki University of Helsinki
University groups
Semiconductor manufacturers
Molecular lay-up of oxide surfaces Prof. Aleskovski, St. Petersburg
Research goals in ALE-ALD
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
Semiconductor equipmentmanufacturers
Ultra-thin and high-k dielectrics for semiconductor devices
Diffusion barriers and passivationlayers enabling conformality in semiconductor devices
Microchemistry, Helsinki University of Helsinki
University groups
Semiconductor manufacturers
2500 A
4000 AAl2O3
Research goals in ALE-ALD
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
Semiconductor equipmentmanufacturers
Ultra-thin and high-k dielectrics for semiconductor devices
Diffusion barriers and passivationlayers enabling conformality in semiconductor devices
Microchemistry, Helsinki University of Helsinki
University groups
Semiconductor manufacturers
Research goals in ALE-ALD
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
Semiconductor equipmentmanufacturers
Ultra-thin and high-k dielectrics for semiconductor devices
Diffusion barriers and passivationlayers enabling conformality in semiconductor devices
Microchemistry, Helsinki University of Helsinki
University groups
Semiconductor manufacturers
Sr(C5iPr3H2)2(THF)
SrTiO3
Elcoteq
Milestones in ALE-ALD development
Instrumentarium
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
demonstration of ALE for ZnS (Instrumentarium)
exchange reactions for ZnS and oxides
introduction of ALE-EL device performance
production line for flat-panel matrix displays P-250 >> P-400 reactorsCommercial production of ALE-EL panels by Lohja > Planar
travelling wave reactor (Lohja)
introduction of first ALE-EL product
introduction of ALE for catalytic surfaces
demonstration of ALE-CdTe solar cell performance
1974 1980 1990 2000
F-450, F-850 reactors for large surfaces
F-120 reactors (Microchemistry)
F-200 reactors for wafers
Microchemistry
Planar International
Wafer cluster tool reactors (ASM)
R-1 reactors (Picosun)
F-120 reactors (Nanofin)
2010
Picosun
NanofinLohja
ASM
Development of ALD reactors
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
F-120 reactors in Microchemistry in late 1980’s
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
F-850 reactor, Microchemistry in 1998
Pulsar, ASM
Development of ALD reactors
Elcoteq
Milestones in ALE-ALD development
Instrumentarium
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
demonstration of ALE for ZnS (Instrumentarium)
exchange reactions for ZnS and oxides
introduction of ALE-EL device performance
production line for flat-panel matrix displays P-250 >> P-400 reactorsCommercial production of ALE-EL panels by Lohja > Planar
travelling wave reactor (Lohja)
introduction of first ALE-EL product
introduction of ALE for catalytic surfaces
demonstration of ALE-CdTe solar cell performance
1974 1980 1990 2000
F-450, F-850 reactors for large surfaces
F-120 reactors (Microchemistry)
F-200 reactors for wafers
Microchemistry
Planar International
Wafer cluster tool reactors (ASM)
R-1 reactors (Picosun)
F-120 reactors (Nanofin)
2010
Picosun
NanofinLohja
ASM
Development of ALD reactors
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
ALD R1 workstation by Picosun 2004
Moore’s law for the complexity of IC’s
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
From 1960 to 1970, ‘complexity’ is the number of components as initially described by Moore. After 1970, it was often cited as the number of bits in a DRAM or the number of transistors in a microprocessor.Source: Semiconductor International
Moore’s law for the complexity of IC’s
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
From 1960 to 1970, ‘complexity’ is the number of components as initially described by Moore. After 1970, it was often cited as the number of bits in a DRAM or the number of transistors in a microprocessor.Source: Semiconductor International
Introduction of ALD
Moore’s law for the complexity of IC’s
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
From 1960 to 1970, ‘complexity’ is the number of components as initially described by Moore. After 1970, it was often cited as the number of bits in a DRAM or the number of transistors in a microprocessor.Source: Semiconductor International
Introduction of ALD
Moore’s law for the complexity of IC’s
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
ALD contribution to the learning curve
From 1960 to 1970, ‘complexity’ is the number of components as initially described by Moore. After 1970, it was often cited as the number of bits in a DRAM or the number of transistors in a microprocessor.Source: Semiconductor International
Introduction of ALD
TUOMO SUNTOLA RECEIVES EUROPEAN SEMI AWARD FOR 2004SEMI Honors Pioneer in Atomic Layer Deposition Techniques for Semiconductors
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
“… paved the way for the development of nanoscale semiconductor devices …”
Stanley Myers, President & CEO, SEMI. Walter Roessger, President, SEMI Europe, Tuomo Suntola, and Mart Graef, Chairman of the award committee
30 years of ALDTuomo Suntola
T. Suntola: 30 years of ALD ALD 2004, Aug. 16 – 18, 2004, University of Helsinki, Finland
Thank you for your attention
with wishes of inspiration, courage and success in your work on the ALD
