13
Invention of ALD and protection of knowledge Tuomo Suntola WinterSchool 09 12, January 2012 University of Helsinki, Department of Chemistry

Invention of ALD - Elisasuntola/Presentations/2012_HY_Enhance.pdf · Invention of ALD and protection of knowledge 1. ... ‐semiconductor devices ... ALD processing of ZnS,

Embed Size (px)

Citation preview

Page 1: Invention of ALD - Elisasuntola/Presentations/2012_HY_Enhance.pdf · Invention of ALD and protection of knowledge 1. ... ‐semiconductor devices ... ALD processing of ZnS,

Invention of ALDand protection of knowledge

Tuomo Suntola

Winter‐School 09 ‐ 12, January 2012University of Helsinki, Department of Chemistry

Page 2: Invention of ALD - Elisasuntola/Presentations/2012_HY_Enhance.pdf · Invention of ALD and protection of knowledge 1. ... ‐semiconductor devices ... ALD processing of ZnS,

Invention of ALD and protection of knowledge

1. Background

2. Identification of the goal and the problem

3. The solution

4. Patents / Unpublished knowhow

5. Balance between publicity and confidentiality

Winter‐School  09 ‐ 12, January 2012  University of Helsinki, Department of Chemistry

Page 3: Invention of ALD - Elisasuntola/Presentations/2012_HY_Enhance.pdf · Invention of ALD and protection of knowledge 1. ... ‐semiconductor devices ... ALD processing of ZnS,

Environment for ALD innovation

1973

Instrumentarium Oy‐ Search for new challengesLate 1973

Technology background‐ thin film technologies‐ semiconductor devices

Proposal for EL‐flat panel development, March 1974

Confidence for industrial success 

1.1.1974

Page 4: Invention of ALD - Elisasuntola/Presentations/2012_HY_Enhance.pdf · Invention of ALD and protection of knowledge 1. ... ‐semiconductor devices ... ALD processing of ZnS,

Invention of ALD

State of the art:‐ High performance demonstrated‐ Major problems with stability due 

to high operational voltage

Proposal for EL‐flat panel development, March 1974

Novel thin film processing technique

is needed 

Buildup of ordered film structure requires ordered 

processing condition

Idea of sequential buildup of compounds, 

June 1974

Page 5: Invention of ALD - Elisasuntola/Presentations/2012_HY_Enhance.pdf · Invention of ALD and protection of knowledge 1. ... ‐semiconductor devices ... ALD processing of ZnS,

1. ALD processing of ZnS,September 1974

From idea to demonstration

Idea of sequential buildup of compounds, 

June 1974

0.4

m0.6

0.2

00 20

Hexagonal ZnS: monolayer 3.13 Ån=2.36

minutes

1/3 x monolayer

10 torr

360 C

4x10 torr

3x10 torr2x10 torr

2 c/s

Zn

S

320 C

100 C

Construction of testequipment 

Page 6: Invention of ALD - Elisasuntola/Presentations/2012_HY_Enhance.pdf · Invention of ALD and protection of knowledge 1. ... ‐semiconductor devices ... ALD processing of ZnS,

From idea to patents

Method for producing compound thin films:Definition of conditions for ALD reaction to occur

Invention or a law of nature?

Oral hearing by examiners at

‐ US P.O., Washington‐ Soviet P.O., Moskow‐ Japan P.O., Tokyo‐ Germany P.O., Munich 

1977‐11‐15,  US 4.058.430

Demonstration,Sept 1974

Idea, June 1974

1. ALD patent,November 1974Worldwide

Page 7: Invention of ALD - Elisasuntola/Presentations/2012_HY_Enhance.pdf · Invention of ALD and protection of knowledge 1. ... ‐semiconductor devices ... ALD processing of ZnS,

Demonstration,Sept 1974

From idea to patentsIdea, June 1974

1. ALD patent,November 1974Worldwide

2. ALD patent,February 1979Worldwide

Method for performing growth of compound thin films:

A method and an apparatus are provided for performing growth of compound thin films by alternately repeating separate surface reactions of the substances comprising the compound. A carrier gas affects a diffusion barrier between the surface reaction steps to be separated from each other. The gas phase diffusion barrier is also applied to separate the source regions of different reacting vapors both from each other and from the surface reaction zone. 

Method for producing compound thin films:Definition of conditions for ALD reaction to occur

Invention or a law of nature?

Oral hearing by examiners at

‐ US P.O., Washington‐ Soviet P.O., Moskow‐ Japan P.O., Tokyo‐ Germany P.O., Munich 

1977‐11‐15,  US 4.058.430 1983‐11‐01,  US 4.413.022

Page 8: Invention of ALD - Elisasuntola/Presentations/2012_HY_Enhance.pdf · Invention of ALD and protection of knowledge 1. ... ‐semiconductor devices ... ALD processing of ZnS,

Demonstration,Sept 1974

From idea to patentsIdea, June 1974

1. ALD patent,November 1974Worldwide

2. ALD patent,February 1979Worldwide

Method for performing growth of compound thin films:

A method and an apparatus are provided for performing growth of compound thin films by alternately repeating separate surface reactions of the substances comprising the compound. A carrier gas affects a diffusion barrier between the surface reaction steps to be separated from each other. The gas phase diffusion barrier is also applied to separate the source regions of different reacting vapors both from each other and from the surface reaction zone. 

Method for producing compound thin films:Definition of conditions for ALD reaction to occur

Invention or a law of nature?

Oral hearing by examiners at

‐ US P.O., Washington‐ Soviet P.O., Moskow‐ Japan P.O., Tokyo‐ Germany P.O., Munich 

1977‐11‐15,  US 4.058.430 1983‐11‐01,  US 4.413.022

Page 9: Invention of ALD - Elisasuntola/Presentations/2012_HY_Enhance.pdf · Invention of ALD and protection of knowledge 1. ... ‐semiconductor devices ... ALD processing of ZnS,

Method for performing growth of compound thin films

Page 10: Invention of ALD - Elisasuntola/Presentations/2012_HY_Enhance.pdf · Invention of ALD and protection of knowledge 1. ... ‐semiconductor devices ... ALD processing of ZnS,

Method for performing growth of compound thin films

Page 11: Invention of ALD - Elisasuntola/Presentations/2012_HY_Enhance.pdf · Invention of ALD and protection of knowledge 1. ... ‐semiconductor devices ... ALD processing of ZnS,

Activation of academic work 

First public presentation of ALD as a thin film method in the Fifth International Conference on Vapor Growth and Epitaxy1981

Steps in publicity

First public presentation of ALD‐EL devicesin SID 1980 conference in San Diego

Atomic Layer Epitaxy in Semiconductor Devices Applications, MRS Boston 1994

Commercial interest in EL displays

III‐V  ALD Activity in Japan

Commercial ALD‐reactors byMicrochemistry Ltd.

Page 12: Invention of ALD - Elisasuntola/Presentations/2012_HY_Enhance.pdf · Invention of ALD and protection of knowledge 1. ... ‐semiconductor devices ... ALD processing of ZnS,

Development steps in the ALD

Need, solution, demonstration, basic patentsProduct prototypes, reactors for production

Commercial  production of EL panels,   Lohja / Planar

1970 1980 1990 2000 2010

Research for ALD chemistry and new applications

Microchemistry Ltd 1999 ASM Microchemistry2004 Picosun Oy2005 Beneq Oy

Fast increase of ALD activityresearch & industrial

Page 13: Invention of ALD - Elisasuntola/Presentations/2012_HY_Enhance.pdf · Invention of ALD and protection of knowledge 1. ... ‐semiconductor devices ... ALD processing of ZnS,

Invention of ALDand protection of knowledge

Tuomo Suntola

Winter‐School 09 ‐ 12, January 2012University of Helsinki, Department of Chemistry