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ALD for advanced semiconductor and nanotechnology manufacturing
Tuomo Suntola, Picosun Oy
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
Conventional methods for compound film deposition
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
Vacuum evaporation Sputtering CVD
Heat treatment
Nucleation
Final crystallization
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
Source control
Buildup of thin film in source controlled deposition
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
Source control Surface control
Buildup of thin film in source controlled and in surface controlled deposition
The ALD sequences for compound AB
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
Substrate surface
The ALD sequences for compound AB
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
Substrate surface Introduction of precursor 1 supplying element A of compound AB
The ALD sequences for compound AB
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
Substrate surface Introduction of precursor 1 supplying element A of compound AB
Completed monolayer of element A
The ALD sequences for compound AB
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
Substrate surface Introduction of precursor 1 supplying element A of compound AB
Completed monolayer of element A
Introduction of precursor 2 supplying element B of compound AB
The ALD sequences for compound AB
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
Substrate surface Introduction of precursor 1 supplying element A of compound AB
Completed monolayer of element A
Introduction of precursor 2 supplying element B of compound AB
Completed monolayer of element B
The ALD sequences for compound AB
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
Substrate surface Introduction of precursor 1 supplying element A of compound AB
Completed monolayer of element A
The ALD sequences for compound AB
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
Substrate surface Introduction of precursor 1 supplying element A of compound AB
Completed monolayer of element A
-reduced monolayer density
The ALD sequences for compound AB
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
Substrate surface Introduction of precursor 1 supplying element A of compound AB
Completed monolayer of element A
-reduced monolayer density
Introduction of precursor 2 supplying element B of compound AB
The ALD sequences for compound AB
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
Substrate surface Introduction of precursor 1 supplying element A of compound AB
Completed monolayer of element A
-reduced monolayer density
Introduction of precursor 2 supplying element B of compound AB
Completed monolayer of element B
-reduced monolayer density
The ALD sequences for compound AB
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
Substrate surface
The ALD sequences for compound AB
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
Substrate surface Introduction of precursor AX supplying element A of compound AB
removal of XY’
XY’
The ALD sequences for compound AB
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
Substrate surface Introduction of precursor AX supplying element A of compound AB
removal of XY’
Buildup of AX (+X)
XY’
The ALD sequences for compound AB
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
Substrate surface Introduction of precursor AX supplying element A of compound AB
removal of XY’
Buildup of AX (+X) Introduction of precursor BY supplying element B of compound AB
removal of XY
XYXY’
The ALD sequences for compound AB
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
Substrate surface Introduction of precursor AX supplying element A of compound AB
removal of XY’
Buildup of AX (+X) Introduction of precursor BY supplying element B of compound AB
removal of XY
Completed compound AB monolayer
XYXY’
Atomic Layer Deposition
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
substrates
precursor feeding tubes
heating elements
A B E
The ALD reactor
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
SA SB
G
F
Z L
P
LC
C
BHL
HS
HZ
VS
SA, SB sources for metallic and non-metallic precursorsV precursor and purge gas valves + feeding lines G purge gas supplyZ the reaction zone B reactor body, vacuum chamber HS, HL, HZ heating system for sources, gas lines and the reaction zoneC control system for valving and temperaturesL, LC load lock and the loading/deloading system for the substrate (S)F filter in the exhaust lineP vacuum pump
ALD for advanced semiconductor and nanotechnology manufacturing
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
F-850 reactor, Microchemistry in 1998
Pulsar, ASM
SUNALE™ ALD Reactors, Picosun Oy
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
Conformal growth mode
10 kV x 80 000
2500 A
4000 AAl O2 3
Tuomo Suntola, Picosun Oy
Nanotech in Russia: Development of Nanotechnologies and NanomaterialsRussian-Finnish Scientific Conference, 12 – 13 September 2007, Helsinki
Conformal growth mode
Superlattice by NEC, Japan
