Invention of ALDand protection of knowledge

Tuomo Suntola

Winter-School 09 - 12, January 2012University of Helsinki, Department of Chemistry

Invention of ALD and protection of knowledge

1. Background

2. Identification of the goal and the problem

3. The solution

4. Patents / Confidential knowhow / Presentation

5. From the idea to a major processing technology

Environment for ALD innovation

1973

Confidence for industrial success

Technology background- thin film technologies- semiconductor devices

1.1.1974 Proposal for EL-flat panel development, March 1974

Instrumentarium Oy- Search for new challengesLate 1973

Invention of ALD

State of the art:- High performance demonstrated- Major problems with stability due

to the high operational voltage

Proposal for EL-flat panel development, March 1974

Buildup of ordered film structure requires ordered

processing condition

Novel thin film processing technique

is needed

Idea of sequential buildup of compounds,

June 1974

1. ALD processing of ZnS,September 1974

From idea to demonstration

Idea of sequential buildup of compounds,

June 1974

Construction of testequipment

10-4 torr

360 C

4x10-5 torr

3x10-3 torr2x10-2 torr

2 c/s

Zn S

320 C

100 C

0.4

mm0.6

0.2

00 10 20 minutes

Hexagonal ZnS: monolayer 3.13 Ån=2.36

1/3 x monolayer

From idea to patents

1977-11-15, US 4.058.430

Demonstration,September 1974

Idea, June 1974

1. ALD patent, November 1974

Method for producing compound thin films:Definition of conditions for ALD reaction to occur

Invention or a law of nature?

Oral hearing at

- US P.O., Washington- Soviet P.O., Moscow- Japan P.O., Tokyo- Germany P.O., Munich

From idea to patentsIdea, June 1974

1. ALD patent, November 1974 2. ALD patent, February 1979

Method for performing growth of compound thin films:

A method and an apparatus are provided for performing growth of compound thin films by alternately repeating separate surface reactions of the substances comprising the compound. A carrier gas affects a diffusion barrier between the surface reaction steps to be separated from each other. The gas phase diffusion barrier is also applied to separate the source regions of different reacting vapors both from each other and from the surface reaction zone.

Method for producing compound thin films:Definition of conditions for ALD reaction to occur

Invention or a law of nature?

Oral hearing at

- US P.O., Washington- Soviet P.O., Moscow- Japan P.O., Tokyo- Germany P.O., Munich

1977-11-15, US 4.058.430 1983-11-01, US 4.413.022

Demonstration,September 1974

Project moved toLohja Corporation

1978

Method for performing growth of compound thin films

Method for performing growth of compound thin films

Activation of academic workand conferences on ALD

Steps in publicity

First public presentation of ALE for the growth of thin material layers: 5. International Conference on Vapor Growth and Epitaxy 1981

First public presentation of ALD-EL devices:SID 1980 conference in San Diego

Atomic Layer Epitaxy in Semiconductor Devices Applications, MRS Boston 1994

Commercial interest in EL displays

III-V ALD Activity in Japan

Commercial ALD-reactors byMicrochemistry Ltd.

ALE, Atomic Layer Epitaxy:Greek language: ”epi - taxis”

=> ”On arrangement”

2004 Picosun Oy2005 Beneq Oy

From the Idea to a Major Processing Technology

Need, solution, demonstration, basic patentsProduct prototypes, reactors for EL production

Commercial production of EL panels, Lohja / Planar

1970 1980 1990 2000 2010

Research for ALD chemistry and new applications

Microchemistry Ltd 1999 ASM Microchemistry

Explosive increase in ALD activity- research & industrial

Thank you for your attention!

Winter-School 09 - 12, January 2012University of Helsinki, Department of Chemistry