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NAS Design & Test Design & Test Challenges & Challenges & Solutions in Solutions in Nanometer Era Nanometer Era by by Yervant Zorian Yervant Zorian Vice President & Chief Scientist Vice President & Chief Scientist Virage Logic Corporation Virage Logic Corporation

NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

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Page 1: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

Design & Test Design & Test Challenges & Solutions Challenges & Solutions

in Nanometer Erain Nanometer Era

byby

Yervant ZorianYervant Zorian

Vice President & Chief ScientistVice President & Chief Scientist

Virage Logic CorporationVirage Logic Corporation

Page 2: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

AgendaAgenda

• Market RequirementsMarket Requirements

• Technology Trends & ChallengesTechnology Trends & Challenges

• Design & Test SolutionsDesign & Test Solutions

• Continuous Technology Innovation Continuous Technology Innovation

• ConclusionsConclusions

Page 3: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

1947- BINAC

1944 - ENIAC – programming and testing Size- 1 x 2.1 x 33 meters, 140 square meter, contains 19.000 vacuum tubes, 1500 relays, and uses 180 kWh, its volume was 100 m3 and weighed appr. 30.000 kilo

1952 UNIVAC

Page 4: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

Integrated Applications Integrated Applications Drives Cost Reduction/Speeds Market AdoptionDrives Cost Reduction/Speeds Market Adoption

MSM5500 1xEV-DO Commercial Device (2003) MSM6100 1X Commercial Device (2005)

Power Mgmt.

Base Band with integrated co-processorBase Band with integrated co-processorBase BandBase Band

Memory MemoryPower Mgmt.

Smaller geometries allow us to have more features in smaller footprints.

180nm 130nm

Page 5: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

Integrated Applications Integrated Applications Drives Cost Reduction/Speeds Market AdoptionDrives Cost Reduction/Speeds Market Adoption

QSC6030 1x CDMA200 Commercial Device (2006)

Smaller geometries and integration allow us to have more features in smaller footprints.

… Moving to single chip phone!

Memory

QSC6030 Digital Modem & µProc, BBA, RF & PMICQSC6030 Digital Modem & µProc, BBA, RF & PMIC

RF

Page 6: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

How to produce this level of integration?How to produce this level of integration?• The next generation multimedia terminal supports :The next generation multimedia terminal supports :

– high-bandwidth wireless communication ( ~7mbs) ;high-bandwidth wireless communication ( ~7mbs) ;– Multiple modems (Blue tooth, HSUPA, 1x, GSM, WiFi etc), Multiple modems (Blue tooth, HSUPA, 1x, GSM, WiFi etc), – Bi-directional motion video; Bi-directional motion video; – High-quality audio(MPEG) , High-quality audio(MPEG) , – GraphicsGraphics– Low power Low power – Integration of RF/ Memory /Analog Integration of RF/ Memory /Analog – Speech, and pen-based inputSpeech, and pen-based input– Full text and graphics input Full text and graphics input – HD TV on DemandHD TV on Demand– Solar chargerSolar charger– Heads up display / solar insensitive displayHeads up display / solar insensitive display– 100% input mapping accuracy100% input mapping accuracy– Full function word processor / spreadsheets, and editingFull function word processor / spreadsheets, and editing

MemoryMemory

Micro-Micro-ProcessorProcessor

GSM/GPRSGSM/GPRS

DSPDSPGPSGPS

3D Graphics3D Graphics

VideoVideo

AudioAudio

ImagingImaging

CDMACDMA

DSPDSP

Page 7: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

Technology TrendsTechnology Trends• Increased number of cores Increased number of cores

• Megabits of embedded RAMMegabits of embedded RAM

• Increasing timing domains and higer frequenciesIncreasing timing domains and higer frequencies

• More and more power domains and (low) power modesMore and more power domains and (low) power modes

• Zero PPM qualityZero PPM quality

• Exploding data volumesExploding data volumes

• New process material and more layersNew process material and more layers

• Intra / Inter die variationsIntra / Inter die variations

• Gigabit I/OGigabit I/O

Page 8: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

Technology ProductionTechnology Production

• Growth in technology user community continuesGrowth in technology user community continues

• Most complex technologies for childrenMost complex technologies for children

• Technology users versus producersTechnology users versus producers

• Research -> Development -> ManufacturingResearch -> Development -> Manufacturing

• Producers were Vertically Integrated Systems Producers were Vertically Integrated Systems

companies companies – AT&T, DEC, IBM, Philips, Siemens, HitachiAT&T, DEC, IBM, Philips, Siemens, Hitachi

Page 9: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

1. Problem: Production Cost Challenges1. Problem: Production Cost Challenges

• Capital expenditure for new fabs is increasing at exponential paceCapital expenditure for new fabs is increasing at exponential pace

[Source: Samsung]

0.40.4

6 inch6 inch 8 inch8 inch 12 inch 12 inch 18 inch18 inch

50K50Kwpwpmm

5.0↑5.0↑

20K20Kwpmwpm20K20K

wpmwpm

30K30Kwpmwpm

2.5 ∼ 2.92.5 ∼ 2.9

0.7∼1.00.7∼1.0

New Fabs CapExNew Fabs CapEx

($B)($B)

* WPM : Wafer per Month [Source: IBS, 2006]

D/RD/R(nm)(nm)

ProcessDevelopmentCost

ProcessRamp-UpCost

130130 9090 6565 4545 3232

1.61.6

1.11.1

0.80.8

0.60.6

0.40.4

($B)($B)

Process Development Process Development CostCost

Process technology development costs are also rising rapidly

ROI Risk

Design complexity and cost increase rapidly in advanced node SOCs

Architecture

Verification

Physical

Validation

9.29.2

18.018.0

46.246.2

[Source: IBS 2006]

Software

Required Revenue> 10x of Design Cost

Design CostDesign Cost

($M)($M)

130130 9090 6565

Page 10: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS © 2009 Virage Logic Corporation – COMPANY CONFIDENTIAL

Semiconductor Industry ChallengesDriving Need for PartnershipsSemiconductor Industry ChallengesDriving Need for Partnerships

• Technology ChallengesTechnology Challenges– Rapidly shrinking life cyclesRapidly shrinking life cycles– Increasing technology complexityIncreasing technology complexity

• Business ChallengesBusiness Challenges– Rising NRE and R&D costsRising NRE and R&D costs– Shrinking end-user/product pricesShrinking end-user/product prices

• Market ChallengesMarket Challenges– Time-To-Market Time-To-Market – Time-To-VolumeTime-To-Volume– CompetitivenessCompetitiveness

65nm

NRE & R&D Costs

Process Technology Node

180nm 130nm 90nm 45nm

End

Use

r/P

rodu

ct P

rices

SoCs

NR

E &

R&

D C

osts

Page 11: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

Complex Multi-Party RelationshipsEach Party has its Motivations and Interests

PhysicalTools

Libraries &Views

Design Kit.

GDS-II

Wafers

IC IC DESIGNDESIGNHOUSEHOUSE

Front EndTools

Protos

IC’s

Qual

DeBug

SiSiFoundryFoundry

ENGENG

SiSiFoundryFoundryManufManuf......

Si Wafers

IP &Views

DesignKit

TestPartsRules & Models

SystemHouse

LibraryVendor

IPIPVendor

BE CADVendor

FE CADVendor

AssemblyContractor

TestContractor

FA/ DeBugFIB/etc..

1. Disaggregation in Technology Production

Process EDA Design

Design Re-spins

Process EDA Design

Design Re-spins

‘is’ in the future

Speci

alizat

ionDe

pth

‘was’ in the past

Speci

alizat

ionDe

pth

‘was’ in the past

Decreasing Overlap Between Principal DisciplinesDisappearing common language

Source : Tality

• Increasing Specialization – Technology complexity

• Designers driven to higher levels of abstraction – distant from process and test

• Process engineers driven to material, optics, plasma sciences

– Increasing gaps between disciplines• Decreasing ability to communicate in a

common language

• Increasing Business Segregation• IDM or Fabless• IP house or chip house• ATE, systems, validation or verification

– Solving the test equation is only getting harder.

Source : TalitySystem level optimization needed

Systems Design

IC Design

Page 12: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS 12

Standardized SolutionsStandardized Solutions

Pre-Integrated test and diagnosis IP into physical IP

External access - use of standard interface, such as \IEEE 1500, IEEE 1149.1

16

Page 13: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

CharacterizationCharacterizationCharacterizationCharacterization

Production Production Ramp UpRamp Up

Production Production Ramp UpRamp Up

Volume Volume FabricationFabrication

Volume Volume FabricationFabrication

Test Test Assembly Assembly PackagingPackaging

Test Test Assembly Assembly PackagingPackaging

In-FieldIn-FieldIn-FieldIn-Field

IP DesignIP DesignIP DesignIP Design

Failure Failure AnalysisAnalysisFailure Failure

AnalysisAnalysis

SoC DesignSoC DesignSoC DesignSoC Design

Disaggregated FlowDisaggregated Flow

Page 14: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

Disaggregated IndustryDisaggregated Industry

• Creation new companies vs existing companiesCreation new companies vs existing companies– Spin-off culture vs start-ups culture creationSpin-off culture vs start-ups culture creation

• Rise of Silicon Valley feeding start-upsRise of Silicon Valley feeding start-ups– Stanford University and Hewlett PackardStanford University and Hewlett Packard– Concentration of Venture Capital FirmsConcentration of Venture Capital Firms– Enabling environment – Legal, banking, accountingEnabling environment – Legal, banking, accounting– International contributors (Asian CEOs)International contributors (Asian CEOs)

• New companies originated from New companies originated from – University labs – HP, Google, Yahoo, Oracle, eBAYUniversity labs – HP, Google, Yahoo, Oracle, eBAY– Large industrial corporations – Intel, Nvidia, Cisco, Large industrial corporations – Intel, Nvidia, Cisco,

SUN, LSI Logic, etc. SUN, LSI Logic, etc.

Page 15: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

Alternate Logic Devices

Manufacturing Development Research

Source: Intel

Si Substrate

Metal Gate

High-kTri-Gate

S

G

D

III-V

S

Carbon Nanotube FET

50 nm

35 nm

30 nm

SiGe S/D

Strained Silicon

SiGe S/D

Strained Silicon

Technology Generation

Technology Generation

20 nm

10 nm

5 nm5 nm

5 nm

Nanowire

90 nm 65 nm 45 nm 32 nm

2003 2005 2007 2009 2011+

2. Trend: Miniaturization Continues 2. Trend: Miniaturization Continues 2. Trend: Miniaturization Continues 2. Trend: Miniaturization Continues

Page 16: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

Moore’s Law Moore’s Law Enabling Significant Enabling Significant Product Opportunities Product Opportunities at Same Costat Same Cost

Better system level power/performance by integrating more functionality on a single die enabled by the increased availability of transistors

Page 17: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

Moore‘s Law on Wide Range of Products Moore‘s Law on Wide Range of Products

Multicore designsHighly parallel designs

SOCuP, DSP, GPS, modems, memory

AMD Quadcore Intel Quadcore

IBM Cell

nVidia Quad SLI

Qualcomm 7600 Xilinx Virtex 5

More and more timing domainsMegabits of embedded RAMMore and more power domains and (low)power modesZero PPM qualityExploding data volumesIntra/ Inter die variationsDC to Gigabit I/O

More Mbytes/ sec = measure of goodness

Page 18: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

2. Problem: Defectivity 2. Problem: Defectivity Miniaturization result in

Finer and denser semiconductor fabrication Increased susceptiblity Increased defectivity Lower manufacturing yield and reliability

Observed as Defect density Realistic Faults Timing problems Transient or Soft Errors

Page 19: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS © 2009 Virage Logic Corporation

Silicon QualitySilicon Quality• Enhanced Test algorithms with the knowledge of accurate background patterns provide 100% Enhanced Test algorithms with the knowledge of accurate background patterns provide 100%

fault coverage for comprehensive fault typesfault coverage for comprehensive fault types– New faults types appear at advanced process technologiesNew faults types appear at advanced process technologies

• Resistive faultsResistive faults

• Performance faultsPerformance faults• Bridging faultsBridging faults• Parametric variationParametric variation

– Comprehensive modeling of memory topology required to generate dedicated background Comprehensive modeling of memory topology required to generate dedicated background patterns for fault detectionpatterns for fault detection

– Generic algorithms are not as granular resulting in test escapesGeneric algorithms are not as granular resulting in test escapes

Lack of knowledge of complete scrambling information can lead to up to 30% test escapes

Page 20: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS 20

Silicon Debug CycleSilicon Debug Cycle• Need to gather failure data using diagnosis IP and Need to gather failure data using diagnosis IP and

analyze obtained data by off-chip fault localization analyze obtained data by off-chip fault localization methodologies, tools and equipmentmethodologies, tools and equipment

• Leverage same infrastructure IP for test, silicon Leverage same infrastructure IP for test, silicon debug and diagnosisdebug and diagnosis

• Integrated Silicon Debug Solution comprised of - Integrated Silicon Debug Solution comprised of - – Analysis and generation of embedded test & Analysis and generation of embedded test &

diagnosis IPdiagnosis IP– Integration of embedded test & diagnosis IPIntegration of embedded test & diagnosis IP– Creation of yield acceleration data baseCreation of yield acceleration data base– Failure data from diagnosis IP analyzed off-chip Failure data from diagnosis IP analyzed off-chip

for fault localizationfor fault localization

Page 21: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS 21

Infrastructure IP for Test and DiagnosisInfrastructure IP for Test and Diagnosis

Hierarchical network of I-IP blocks

Standard interface IEEE 1500 standard

interface between I-IP units

STAR Fuse Box

JTAG

TAP

STAR

JPC

STAR Processor n

6IW 1

STARSTARSRAM SRAM

IW 2

STARASAP

6IW 3

STARSTARRF RF

IW 4

STARASAP

STAR Processor 2

6IW 1

STARSTARSRAM SRAM

IW 3

STARASAP

6IW 4

STARSTARRF RF

IW 6

STARASAP

STAR Processor 1

WRAPPER 1

STARSRAM

WRAPPER 2

STAR SRAM

WRAPPER 3

STARSRAM

WRAPPER 4

STARSRAM

IEE

E1

50

0

SFP

Page 22: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS 22

Accelerating Silicon Debug CycleAccelerating Silicon Debug Cycle

SiliconDebug

Tester

Bit Map

Coordinate IdentificationDBDB

SoC w/ ET&R

Vector Generation

Std. formant

Page 23: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS 23

Reducing Time to DebugReducing Time to Debug

Allow accurate analysis - Allow accurate analysis -

• Identify defective memoryIdentify defective memory

• Logical bit mappingLogical bit mapping

• Physical bit mappingPhysical bit mapping

• Calculating X-Y coordinatesCalculating X-Y coordinates

• Defect ClassificationDefect Classification

• Fault Localization – root cause identificationFault Localization – root cause identification

• Diagnosis – fault classificationDiagnosis – fault classification

Page 24: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS 24

Fault Type Diagnosis of Failed Bit i) Single cell faults (SPF1)

Stuck-at faults (SAF) Stuck-open faults (SOF) Transition faults (TF) Data retention faults (DRF) Read destructive fault Deceptive read destructive fault Incorrect read fault

ii) Two cell faults (SPF2) Inversion coupling fault (CFin) Idempotent coupling fault (CFid) State coupling fault (CFst) Disturb coupling fault (CFds) Incorrect read coupling Fault (CFir) Read destructive coupling fault (CFrd) Deceptive read destructive coupling Fault (CFdrd) Transition coupling fault

iii) Address decoder faults (AF)

Page 25: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS 25

Fault ClassificationFault Classification

• Based on diagnostic information collected from tester Based on diagnostic information collected from tester response, it will be possible to determine fault types.response, it will be possible to determine fault types.

Example: March FD

(W0); (R0); (R0, W1, W1, R1); (R1, W0, R0, W1); (R1, W1);

(R1); (R1); (R1, W0, W0, R0); (R0, W1, R1, W0); (R0, W0);

(R0); (R0, W1, W1, R1); (R1); (R1, W0, W0, R0); (R0).

Page 26: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS 26

Part of Dictionary of MARCH FD

00110000000110001000<1R1/0/1

>

10000100010000000010<0R0/1/

0>

00111000100111101100<1/0/->

11000111011000010011<0/1/->

R

19

R

18

R

17

R

16

R

15

R

14

R

13

R

12

R

11

R

10

R

9

R

8

R

7

R

6

R

5

R

4

R

3

R

2

R

1

R

0

Each two pair of Fault signatures do not coincideMARCH FD – Full Diagnosis algorithm

Example: SMS detected errors at (2, 3, 5, 6, 7, 8, 11,15, 16, 17) Read operations then the fault is Stuck-At 0 (<1/0/->).

Page 27: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

3. Trend: Embedded Memory in ICs3. Trend: Embedded Memory in ICs

Page 28: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS 28

3. Enhancing Yield via Repair3. Enhancing Yield via Repair

0

10

20

30

40

50

60

70

80

90

100

2.69 5.39 10.78 21.56 43.11 64.67 86.22

% Memory on die

Mem

ory

Yie

ld (

%)

Memory yield (without redundancy)

Memory Yield with redundancy

3 5 11 22 43 65 86

1 Mb 2 Mb 4 Mb 8 Mb 16 Mb 24 Mb 32 Mb

Percent of Memory on die

Width of die in mm 12.00

Height of die in mm 12.00Defect density for logic in # per sq. in. 0.4Defect density for memoryin # per sq. in. 0.8

Process technology 32nm3 5 11 22 43 65 86

Page 29: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

Conventional Manuf. Repair

External Test & Repair Method

Store failed bit map externally in a large capture memory

Use external general purpose redundancy allocation software

Blow fuses using external repair equipment

High cost and silicon area

Page 30: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

I-IP for Single Time Repair

External Memory tester eliminated

External bit map storage eliminated

External redundancy analysis software eliminated

High yield achieved because of integrated solution

• Small

Capture Memory

Page 31: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

I-IP for Multi-Time Repair

External repair equipment eliminated

Overall manufacturing cost reduced

Efficiency of repair increased (PVT corner conditions repaired)

Efficient of area & performance improved

Page 32: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS 32

Enhancing Yield via RepairEnhancing Yield via Repair

• Type and amount of redundancyType and amount of redundancy

• Fault detection & location algorithmFault detection & location algorithm

• Redundancy allocation algorithmRedundancy allocation algorithm

• Repair MethodologyRepair Methodology

• Reconfiguration mechanismReconfiguration mechanism

Page 33: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

Repair Efficiency depends on

– Knowledge of memory topology

– Knowledge of process defect history

– Having dedicated algorithms

Redundancy and Repair AllocationRedundancy and Repair Allocation

Page 34: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

4. Problem: Resource Limitation Challenge4. Problem: Resource Limitation Challenge

• Cost of production increasedCost of production increased

• Counterpoint: The San Andreas FaultCounterpoint: The San Andreas Fault

Page 35: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

Globalization in Technology ProductionGlobalization in Technology Production

• New locations around the world New locations around the world – Manufacturing, ex: Mexico, Taiwan, ChinaManufacturing, ex: Mexico, Taiwan, China– Development, ex: India, KoreaDevelopment, ex: India, Korea– Research, ex: Armenia, RussiaResearch, ex: Armenia, Russia

• New trends in global technology productionNew trends in global technology production– Distributed corporate sitesDistributed corporate sites– Outsourcing servicesOutsourcing services– New global start-upsNew global start-ups

Page 36: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

Top 20 Semiconductor Technology Companies Top 20 Semiconductor Technology Companies

2007 Rank

2006 Rank Company

2006 Revenue (Millions)

2007 Revenue (Millions)

Percent Change

1 1 Intel 31,542$ 33,973$ 7.7%2 2 Samsung Electronics 19,842$ 20,137$ 1.5%3 4 Toshiba 10,141$ 12,590$ 24.1%4 3 Texas Instruments 12,600$ 12,172$ -3.4%5 5 STMicroelectronics 9,854$ 9,991$ 1.4%6 7 Hynix 7,865$ 9,614$ 22.2%7 6 Renesas technology 7,900$ 8,137$ 3.0%8 14 Sony 5,129$ 8,040$ 56.8%9 10 NXP 5,894$ 6,038$ 2.4%

10 15 Infineon Technologies 5,119$ 5,864$ 14.6%11 8 AMD 7,506$ 5,792$ -22.8%12 16 Qualcomm 4,529$ 5,603$ 23.7%13 11 NEC Electronics 5,601$ 5,555$ -0.8%14 9 Freescale Semiconductor 5,988$ 5,349$ -10.7%15 13 Micron Technology 5,247$ 4,943$ -5.8%16 12 Qimonda 5,413$ 4,186$ -22.7%17 17 Matsushita Electric 4,022$ 3,946$ -1.9%18 19 Elpida Memory 3,527$ 3,836$ 8.8%19 18 Broadcom 3,668$ 3,731$ 1.7%20 20 Sharp Electronics 3,341$ 3,584$ 7.3%

Page 37: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS 37

Global SOC DevelopmentGlobal SOC Development- Flat versus hierarchical design solutions

- Pre-optimized hard IP blocks made reusable

DSPPLL

RF RF RFFlash

SRAM

Processor

Mega Bit SRAMLogic

Page 38: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

5. Trend: SOC/SiP Alternatives5. Trend: SOC/SiP Alternatives

• SOC: System on Chip. Integrate combinations of logic,

processor, SRAM, DSP, A/RF, DRAM, NVM

• SiP: Stacked ICs & Packages

1. Non-TSV– bare die stacking: wirebond, flipchip, embedded die substrate– package stacking: PoP, PiP

2. TSV– via first, via middle, via last

• SOP: System on Package. Integrate passives, power

mgmt, thermal structures, antenna switches, MEMS,

etc.

Page 39: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

SOC/SiP Tradeoffs SOC/SiP Tradeoffs PROPRO CONCON

SOCSOC

High performance, low High performance, low power power if tech optimumif tech optimum

Low cost Low cost if simple if simple processprocess

Smaller Bill Of MaterialsSmaller Bill Of Materials

Chip level miniaturizationChip level miniaturization

IPIP instantiation for each instantiation for each tech node & fabtech node & fab

NRE costNRE cost

Development timeDevelopment time

Complex Complex verification & verification & test test

SiPSiP(without (without TSV)TSV)

Optimum technology Optimum technology for for dissimilar functionsdissimilar functions

Flexible Flexible reusereuse of of componentscomponents

Shorter Shorter Time to MarketTime to Market

Low chip-chip Low chip-chip connectivityconnectivity

Lack of EDA toolsLack of EDA tools

KGD/test planningKGD/test planning

Yield liabilityYield liability

SOC and SiP SOC and SiP are complementary are complementary and co-exist in products and co-exist in products

Page 40: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

Evolution in 3D TechnologiesEvolution in 3D Technologies

LimitationsLimitations– Peripheral bonds onlyPeripheral bonds only– Long wire bonds (high inductance, high Long wire bonds (high inductance, high

crosstalk, low speed interconnect)crosstalk, low speed interconnect)

Limited to low-density Limited to low-density interconnects and with interconnects and with specific I/O pad routingspecific I/O pad routing

Current SiP (non-TSV)Current SiP (non-TSV)

Source: ChipPAC

BenefitsBenefits– Area placementArea placement– Excellent electrical characteristicsExcellent electrical characteristics– High densitiesHigh densities

Orders of magnitude Orders of magnitude higher interconnect higher interconnect densities between diesdensities between dies

TSSTSS

Page 41: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

Packaging scenarios for 3D Stacked DRAMPackaging scenarios for 3D Stacked DRAM

PCB

Logic DDR2 -16bit

PCB

Board

SiP

3D TSS(TSVs)

PCB

PCB

3D-ready DDR2 -xbit

Existing DDR2 -16bit

DDR2 -16bit

Using an existing Using an existing DDR2 dieDDR2 die

Wide Interface Wide Interface DDR2 dieDDR2 die

Page 42: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

Thru Silicon Stacking Thru Silicon Stacking Multi-discipline Challenges & GapsMulti-discipline Challenges & Gaps

• Supply Chain and StandardizationSupply Chain and Standardization

• CostCost• DFT/TestDFT/Test

– test strategy and circuitstest strategy and circuits– KGDKGD– failure analysis techniques failure analysis techniques

• Thermal/Mechanical/ReliabilityThermal/Mechanical/Reliability

• EDA tools and methodologiesEDA tools and methodologies

Page 43: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

6. Application-Specific Challenge6. Application-Specific Challenge

• Application-specific disaggregation of semiconductor Application-specific disaggregation of semiconductor

industry – similar to system housesindustry – similar to system houses– Digital home, enterprise, portable, health, etc. Digital home, enterprise, portable, health, etc.

• Application-specific disaggregation of semiconductor Application-specific disaggregation of semiconductor

supply industrysupply industry– EDA suppliersEDA suppliers– IP providersIP providers– FoundriesFoundries

• Test, diagnostics, yield, reliability requirements for Test, diagnostics, yield, reliability requirements for

each application domaineach application domain

Page 44: NAS Design & Test Challenges & Solutions in Nanometer Era by Yervant Zorian Vice President & Chief Scientist Virage Logic Corporation

NAS

Portable and Hand-held

Communications and Networking

Graphics andComputing

Consumer

Application-Specific SolutionApplication-Specific Solution

• What is the impact on Design & Test TechnologyWhat is the impact on Design & Test Technology

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Application-Specific YieldApplication-Specific Yield

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Disruptive TechnologyDisruptive Technology

Imaging, Characterization, Analysis and Modification in Three Dimensions Down to the Sub-Angstrom Level

NanoBiology NanoResearch NanoElectronics

“Energy creation engine”inside a cell at NCI/NIH

Oil Refining Catalyst

Semiconductor Defect Analysis

Data Storage Metrology

Industry and Institute

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A Copper atom is 0.125 nm in diameter

A Penny is 0.75” A Penny is 0.75” diameter = 1.9cmdiameter = 1.9cm

Question? How many copper atoms Question? How many copper atoms can be aligned on the diameter of a can be aligned on the diameter of a penny? penny?

Answer.

152 Million

Scaling The NanoScale

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Properties Vary at Nanoscale

Properties: Electronic, Magnetic, Photonic, Catalytic, etc.

Atomic &

Molecular

Nanoscale

Micro-macro-bulk

Gold ~1nm = Semiconductor

100nm

Pro

per

ty s

cale

Bulk materialAtomic 1nm

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Industries Entering into NanozoneIndustries Entering into Nanozone

time

feat

ure

siz

e

nanozone

Semiconductors

Data storage

Industries….

Pharmaceuticals and Healthcare….Nanobiology Business

NanoIndustry Business

Nanoelectronics Business

100 nanometers

Research is pervasive

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Change and perception –

Popular culture helps to drive consumer perception• Cost Matters - ALWAYS

– Low end phones in 2000 ~ $150, today ~ $22 ( with better size and more features)

• Size Matters – – Smaller is better, bigger is obviously obsolete

• Function and Quality Matter– Bi-directional video with mid to high range digital camera– Lifetime of music on my iPOD – or cell phone– Virtual surround sound with 3D Video and HDTV headsets– GPS– Wearable devices / voice controlled (accurate) input devices

• Time to Market Matters because – When do I get my personal Tricorder? I want it NOW !!

When does science fiction meet science

Cyber gloves Heads up

displays

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ConclusionConclusion

Advanced products for new generations

Technology Miniaturization Continues !Technology Miniaturization Continues !Design & Test Challenges Continue !Design & Test Challenges Continue !

Innovative Solutions Needed !Innovative Solutions Needed !

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Thank You Thank You