Parameter Max. UnitsVDS Drain- Source Voltage -20 VID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -16ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -13 AIDM Pulsed Drain Current -65PD @TA = 25°C Power Dissipation 2.5PD @TA = 70°C Power Dissipation 1.6

Linear Derating Factor 20 mW/°CVGS Gate-to-Source Voltage ±8 VTJ, TSTG Junction and Storage Temperature Range -55 to +150 °C

07/11/01

www.irf.com 1

IRF7410HEXFET® Power MOSFET

These P-Channel HEXFET® Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the extremely low on-resistanceper silicon area. This benefit provides the designerwith an extremely efficient device for use in batteryand load management applications..

The SO-8 has been modified through a customizedleadframe for enhanced thermal characteristics andmultiple-die capability making it ideal in a variety ofpower applications. With these improvements, multipledevices can be used in an application with dramaticallyreduced board space. The package is designed forvapor phase, infrared, or wave soldering techniques.

Description

Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel

PD - 94025

Parameter Max. UnitsRθJA Maximum Junction-to-Ambient 50 °C/W

Thermal Resistance

Absolute Maximum Ratings

W

Top V iew

81

2

3

4 5

6

7 D

D

DG

S

ADS

S

SO-8

VDSS RDS(on) max ID -12V 7mΩ@VGS = -4.5V -16A

9mΩ@VGS = -2.5V -13.6A

13mΩ@VGS = -1.8V -11.5A

IRF7410

2 www.irf.com

Parameter Min. Typ. Max. Units ConditionsIS Continuous Source Current MOSFET symbol

(Body Diode) showing theISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0Vtrr Reverse Recovery Time ––– 97 145 ns TJ = 25°C, IF = -2.5AQrr Reverse Recovery Charge ––– 134 201 µC di/dt = -100A/µs

Source-Drain Ratings and Characteristics

A-65

–––

––––––

-2.5–––

S

D

G

Repetitive rating; pulse width limited by max. junction temperature.

Notes:

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Surface mounted on 1 in square Cu board, t ≤ 10sec.

Parameter Min. Typ. Max. Units ConditionsV(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250µA∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.006 ––– V/°C Reference to 25°C, ID = -1mA

––– ––– 7 VGS = -4.5V, ID = -16A ––– ––– 9 VGS = -2.5V, ID = -13.6A ––– ––– 13 VGS = -1.8V, ID = -11.5A

VGS(th) Gate Threshold Voltage -0.4 ––– -0.9 V VDS = VGS, ID = -250µAgfs Forward Transconductance 55 ––– ––– S VDS = -10V, ID = -16A

––– ––– -1.0 VDS = -9.6V, VGS = 0V––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 70°C

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8VGate-to-Source Reverse Leakage ––– ––– 100 VGS = 8V

Qg Total Gate Charge ––– 91 ––– ID = -16AQgs Gate-to-Source Charge ––– 18 ––– nC VDS = -9.6VQgd Gate-to-Drain ("Miller") Charge ––– 25 ––– VGS = -4.5V td(on) Turn-On Delay Time ––– 13 20 VDD = -6V, VGS = -4.5Vtr Rise Time ––– 12 18 ID = -1.0Atd(off) Turn-Off Delay Time ––– 271 407 RD = 6Ωtf Fall Time ––– 200 300 RG = 6Ω Ciss Input Capacitance ––– 8676 ––– VGS = 0VCoss Output Capacitance ––– 2344 ––– pF VDS = -10VCrss Reverse Transfer Capacitance ––– 1604 ––– ƒ = 1.0MHz

IGSS

µA

mΩRDS(on) Static Drain-to-Source On-Resistance

IDSS Drain-to-Source Leakage Current

nA

ns

IRF7410

www.irf.com 3

Fig 4. Normalized On-ResistanceVs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

-ID

, Dra

in-t

o-S

ourc

e C

urre

nt (

A)

-1.0V

20µs PULSE WIDTHTj = 25°C

VGSTOP -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2VBOTTOM -1.0V

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

1

10

100

-ID

, Dra

in-t

o-S

ourc

e C

urre

nt (

A)

-1.0V

20µs PULSE WIDTHTj = 150°C

VGSTOP -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2VBOTTOM -1.0V

-60 -40 -20 0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R

, D

rain

-to-

Sou

rce

On

Res

ista

nce

(Nor

mal

ized

)

J

DS

(on)

°

V =

I =

GS

D

-4.5V

-16A

1

10

100

1.0 1.2 1.4 1.6 1.8 2.0

V = -10V20µs PULSE WIDTH

DS

-V , Gate-to-Source Voltage (V)

-I

, D

rain

-to-

Sou

rce

Cur

rent

(A

)

GS

D

T = 25 CJ °

T = 150 CJ °

IRF7410

4 www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage

Fig 7. Typical Source-Drain DiodeForward Voltage

0 20 40 60 80 100 1200

1

2

3

4

5

6

Q , Total Gate Charge (nC)

-V

, G

ate-

to-S

ourc

e V

olta

ge (

V)

G

GS

I =D -16A

V =-9.6VDS

0.1

1

10

100

0.2 0.4 0.6 0.8 1.0

-V ,Source-to-Drain Voltage (V)

-I

, R

ever

se D

rain

Cur

rent

(A

)

SD

SD

V = 0 V GS

T = 25 CJ °

T = 150 CJ °

1

10

100

1000

0.1 1 10 100

OPERATION IN THIS AREA LIMITEDBY RDS(on)

Single Pulse T T

= 150 C= 25 C°

°JC

-V , Drain-to-Source Voltage (V)

-I

, Dra

in C

urre

nt (

A)

I ,

Dra

in C

urre

nt (

A)

DS

D

100us

1ms

10ms

1 10 100

-VDS, Drain-to-Source Voltage (V)

0

2000

4000

6000

8000

10000

12000

14000

C, C

apac

itanc

e(pF

)

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZCiss = Cgs + Cgd, Cds SHORTED

Crss = Cgd Coss = Cds + Cgd

IRF7410

www.irf.com 5

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9. Maximum Drain Current Vs.Case Temperature

0.01

0.1

1

10

100

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Notes:1. Duty factor D = t / t2. Peak T =P x Z + T

1 2

J DM thJA A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

The

rmal

Res

pons

e(Z

)

1

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE(THERMAL RESPONSE)

25 50 75 100 125 1500

4

8

12

16

T , Case Temperature ( C)

-I

, Dra

in C

urre

nt (

A)

°C

D

VDS

VGS

Pulse Width ≤ 1 µsDuty Factor ≤ 0.1 %

RD

VGS

VDD

RG

D.U.T.

+-

VDS

90%

10%

VGS

td(on) tr td(off) tf

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

IRF7410

6 www.irf.com

Fig 13. Typical On-Resistance Vs.Drain Current

Fig 12. Typical On-Resistance Vs.Gate Voltage

0.0 2.0 4.0 6.0 8.0

-VGS, Gate -to -Source Voltage (V)

0.002

0.004

0.006

0.008

0.010

RD

S(o

n),

Dra

in-t

o -S

ourc

e O

n R

esis

tanc

e (Ω

)

ID = -16A

0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0

-ID , Drain Current ( A )

0

0.005

0.01

0.015

0.02

RD

S (

on

) , D

rain

-to-

Sou

rce

On

Res

ista

nce

( Ω )

VGS = -2.5V

VGS = -1.8V

VGS = -4.5V

Fig 14b. Gate Charge Test CircuitFig 14a. Basic Gate Charge Waveform

QG

QGS QGD

VG

Charge

D.U.T.VDS

IDIG

-3mA

VGS

.3µF

50KΩ

.2µF12V

Current RegulatorSame Type as D.U.T.

Current Sampling Resistors

+

-

IRF7410

www.irf.com 7

Fig 15. Typical Vgs(th) Vs. Junction Temperature

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

0.2

0.4

0.6

0.8

1.0

-VG

S(t

h) (

V )

ID = -250µA

Fig 16. Typical Power Vs. Time

0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000

Time (sec)

0

100

200

300

400

500

600

700

Pow

er (

W)

IRF7410

8 www.irf.com

SO-8 Package Details

SO-8 Part Marking

e1

D

E

y

b

A

A1

H

K

L

.189

.1497

0°

.013

.050 BASIC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BASIC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MIN MAX

MILLIMETERSINCHES

MIN MAXDIM

8°

e

c .0075 .0098 0.19 0.25

.025 BASIC 0.635 BAS IC

8 7

5

6 5

D B

E

A

e6X

H

0.25 [.010] A

6

7

K x 45°

8X L 8X c

y

0.25 [.010] C A B

e1A

A18X b

C

0.10 [.004]

431 2

FOOTPRINT

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

NOTES:

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS.

6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS. MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].

7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.

MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].

8X 1.78 [.070]

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

INTERNATIONALRECTIFIER

LOGO

F7101

YWWXXXX

PART NUMBER

LOT CODE

WW = WEEKY = LAST DIGIT OF THE YEARDATE CODE (YWW)

IRF7410

www.irf.com 9

33 0.0 0(1 2 .9 9 2 ) M AX .

1 4 .4 0 ( .5 66 )1 2 .4 0 ( .4 88 )

N O TE S :1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T ER .2. O U T L IN E C O N FO R M S T O E IA -4 8 1 & E IA -5 4 1 .

FE E D D IR E C T IO N

T E R M IN A L N U M B E R 1

1 2 .3 ( .48 4 )1 1 .7 ( .46 1 )

8 .1 ( .31 8 )7 .9 ( .31 2 )

N O T E S :1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S ( IN C H E S ).3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .

Tape and Reel

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.07/01