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© 2016
From Technologies to Market
CLINT WPE
- Workshop
ECPE
From Technologies to Market
June 16th 2016
2
OBJECTIVES OF THE ECPE WORKSHOP
• Overall Power Electronics market
• Application drivers to implement SiC & GaN/Si devices
• SiC & GaN/Si technology status, market playground and forecasts
ECPE workshop June 2016
© 2015
Power Electronics and 21st
century challenges
ECPE workshop June 2016
4
POWER ELECTRONICS AND 21ST CENTURY CHALLENGES
World Evolution lead to new challenges for power electronics
Energy Production
Transportationneeds
Efficiency Improvement
RenewableEnergy
Population Growth Mega Cities
Limited Resources CO2 Emission Reduction
5
GLOBAL POWER ELECTRONICS MARKET
Context
• The main trends in the Power Electronics market can be quantified at several levels:
• Inverters: about $46.5 billion in 2015.
• Power discrete and modules: about $15.2 billion in 2015. They include all types of transistors, diodes and power ICs.
• Wafer manufacturing for power devices: $0.94 billion in 2015.
• The inverter market is growing, driven by increasing deployment of renewable energy sources, new rail infrastructures and automotive applications.
• However, the power device market decreased by 3.3% between 2014 and 2015.
• The sectors that most suffered from a market deceleration were consumer based application, such as laptops, mobile phone, etc.
• The fragile recovery in Europe and the slow down of the Chinese markets, where a decisive factor for that decline.
• High power applications were less impacted.
• The main activity in power electronics continues to be integration.• Many players are increasingly active in the power semiconductor industry in order to:
• Reduce device and system costs
• Improve reliability and efficiency of inverters
• Reduce final systems’ weight and dimensions
The power semiconductor industry decreased by 3.3% between 2014 and 2015
ECPE workshop June 2016
6
GLOBAL POWER ELECTRONICS MARKET
2015 – 2021 value chain analysis: system, device, wafer
The power electronics market perspectives are optimistic with a CAGR around 6% for the period 2015-2021
Electronics Systems
$132 B
Power Inverters$47 B
Semiconductor power devices (discrete and
modules)
$15.2 B
Power wafers$0.94 B
Electronics Systems
$145 B
Power Inverters$66 B
Semiconductor power devices (discrete and
modules)
$20.7 B
Power wafers$1.3 B
2015 2021
CAGR: +5.6%
CAGR: +5.3%
CAGR: +2%
CAGR: +5.9%
ECPE workshop June 2016
7
GLOBAL POWER ELECTRONICS MARKET
Evolution of power device market between 2010 and 2021
In 2015 the power electronics market have been contracted, while most indicators were pointing out on the direction of the 2014’s recovery
ECPE workshop June 2016
8
GLOBAL POWER ELECTRONICS MARKET
Power devices market between 2014 and 2021, by type of device
Even though every device will see an increase, power modules will have the biggest growth
ECPE workshop June 2016
9
GLOBAL POWER ELECTRONICS MARKET
Geographical split for power device sales
• Asia is still the landing-field for more than 74% of power products. Indeed, most of the integrators are located in China, Japan or Korea.• China has still increased its market on power device
integration location, reaching more than 41% of the power device sales.
• While Japan is rapidly decreasing, from capturing 20% of the market in 2013 to 15% in 2015.
• Europe and America are keeping or slightly increasing their power device market sales.
• Europe has a strong power electronics production industry, where many leading companies are positioned in top positons in many different applicative-fields: automobile, traction, grid, PV inverter, motor control, etc.
• The power device sales have considerably dropped in Japan. One of the reasons is the USD/JPY exchange rate, but not the only reason. • The Japanese industry might be suffering from its relatively close
local industry, which does not give enough dynamism for implantation of external companies in the Nippon island.
• Said that, it has to be mentioned that Japan and Europe are very strong when it comes to high power device & application assemblies.
China is by far the main integrator of power electronic assemblies
ECPE workshop June 2016
10
POWER ELECTRONICS APPLICATIONS
The power semiconductor devices are used in…
• Automotive
• OEM automotive electronics (includes EV/HEV)
• In-car Audio, infotainment and telematics
• Automotive sensors
• Computer and office equipment
• Electronics in PC and related peripherals (storage, printing, scanning, UPS…)
• Lighting
• Electronics ballast, LED drivers…
• Consumer
• Video/Audio equipment (HiFi, VCR, iPod, MP3, DVD…)
• Digital cameras, Television
• White goods, Power tools, AC systems
• Industry
• Motor control, UPS, Welding, HVAC
Power semiconductors are everywhere surrounding our daily environment
ECPE workshop June 2016
• Medical
• Diagnostic equipment
• Portable appliances
• Imaging (X-ray, MRI, CT…)
• Transportation
• Trains, Ships & vessels, Buses, coaches
• Energy
• Windmills, solar and other renewable energy sources
• Energy transportation and distribution
• Traditional energy production: power plants….
• Military & Aerospace
• Telecommunication
• Cellular handset and infrastructure
• Others
11
INVERTER MARKET AND TRENDS
Technical Breakthrough required in power electronics
$/kW
kW/kg
kW/l
Power Assembly Architecture
Technical
Breakthrough
Passive Elements (Cooling, capacitors, busbars, etc…)
Power Packaging
Wide Band gap Semiconductors
• Converter Topologies (mainly for LV-HV DC/DC and AC/DC)
• Inverter has to be developed according to the electric motor
• High Temperature Capacitors, Laminated Busbars
• Enhanced cooling of the power converter
• High Temperature operation
• More compact inverters
• Low stray inductance packaging
• High Temperature and reliable assemblies
ECPE workshop June 2016
© 2015
WBG materials for power electronics applications
ECPE workshop June 2016
13
POWER DEVICE MARKET OVERVIEW
Curent Range
Voltage Range
Few V 600 V 1 200 V 3 300V
IGBTLV-MOSFET
Thyristor -
IGCT
SJ-MOSFET
EV/HEV
Photovoltaic Building -
Farms
Rail tractionWind turbines
T&DHigh Power
UPS
IT & consumers
Low Power motor drives
Medium/High Power motor
drives
Low/Medium Power UPS
Photovoltaic Residential
SiC
GaN
ECPE workshop June 2016
Few kW
10 kW
100 kW
14
WBG MATERAILS
Figure-of-merit
WBG does not equal to GaN & SiC!
• Besides GaN and SiC, there are other materials, which have even larger band gap than GaN and SiC. These WBGmaterials can potentially further increase the performances of power devices.
0,01
0,10
1,00
10,00
10 100 1000 10000
On
-resi
stan
ce(m
Ω c
m2)
Breakdown voltage(V)
Si
SiC
GaN
Ga2O3
Diamond
AlN
ECPE workshop June 2016
15
WBG MATERIALS FOR POWER ELECTRONICS OVERVIEW
ECPE workshop June 2016
WBG
SiC Device
GaN DeviceGaN on Si
GaN on GaN FS/Bulk GaN
Ga2O3
Diamond
AlN
SiC epi
Epi on Silicon
SiC waferToday: with
commercial
available devices
Future: Still in R&D
16
SEMICONDUCTOR DEVICES: PLENTY OF OPPORTUNITIES FOR WIDE BANDGAP
Figure-of-merit
• SiC will stay the preferred choice for high T° application
• GaN could possibly reach high-voltage values but thus will require bulk-GaN as the substrate.
• Silicon cannot compete at the high-frequency range
Base uponintrinsic
properties, Wide
BandGapcapabilitiesare much
more betterthan Silicon
ECPE workshop June 2016
17
WIDE BAND GAP MATERIAL
Power device technology positioning (As of 2015)
ECPE workshop June 2016
1200V600V
Pro
duct
ran
ge
Voltage
Si IGBT
Thyristor
IGCT
…
Trench
>3.3kV0V
GaN HEMT GaN
Yole Développement - 2016
Trench
Field stop
PT, NPT
Si MOSFETPlanar
200V 1.7kv
Super junction
GaN SiC
18
WBG MARKET SEGMENTATION AS A FUNCTION OF VOLTAGE RANGE
Current status and Yole’s vision for 2020*
While SiC isused for high
voltage applications,
GaN ismainly used
for lowvoltage. The 600-900V
range will bethe
battlefield.
UPSEV/HEV
Motor
ControlPV Inverter
Wind Mills
600 V
Rail Transport.
Smart Power Grid
<200 V 1.2 kV 3.3kV 6.5 kV+
Ships & VesselsPFC/ Power supply
Audio Amplifier
SiC Transistors 2015GaNTransistors 2015
SiC diodes
ECPE workshop June 2016
Medium-Voltage High-VoltageLow-Voltage
GaNTransistors 2020
SiC Transistors 2020
900 V 1.7 kV
Battle
fields
Co-existing * Based on current development status
21
PFC/POWER SUPPLY MARKET SEGMENTATION
Main investigated applications list which are segmented into 7 major domains.
ECPE workshop June 2016
Cellphones
Tablets
E-book
PMP
Game
Wearable
Drone
Ultrasound
imaging
CT Scanner
MRI Systems
X-ray device
Nuclear imaging
Blood pressure
monitors
Blood glucose
meter
Other diagnostic
meters
Patient
monitoring
Laptop
Desktop
Printer
Base
Station
Wired
network
LCD TV
Lighting
supply
Blue Ray™Audio
System
Surveillance
camera
Car audio
Washing
machine
Refrigerator
Air
conditioner
Microwave
Owen
Cooking
heaterGarden tools
Vacuum
cleaner
Threadmill
Rice cooker
Electric Fan
Bread-baking
machine Dish washer
Set-top-boxHome media
Test and
measurement
LEV
Industry
welding
Elevator
Forklifts
Power tools
22
POWER SUPPLY: TREND IN THE INDUSTRY
The need are increased efficiency, higher power density and cost reduction.
• Power supply requirements differ fromdifferent applications, however theprimary trends present in almost allpower supply market segments are:increased efficiency; higher powerdensity and cost reduction.
• Power supply efficiency is a keyselection criterion and this issupported by legislation in more andmore regions in the world.
• In Feb, 2016, the Department of Energy(DOE) in US enforced compliance witha new level of energy efficiencystandards that specifically relate toExternal Power Supplies (EPS). Thisnew energy efficiency standard isknown as LevelVI.
ECPE workshop June 2016
Pow
er
Densi
ty
W/in3
20
10
30
40
2000 2005 2010 2015
Desktop PS
(multiple output)
Notebook adapters
Server
Power density evolution in the power supply
23
PFC APPLICATIONS
WBG has penetrated
the high power PFC
market
• Active PFC uses active switching devices in combination with passive components to change the waveform ofcurrent drawn by a load to improve the power factor
• Applications:
Power
50 W
100 W
1kW
>10kW
Monitors, AC adaptors, LED drivers
Air conditioners,
Servers,
Industrial equipment
General purpose power supplies,
Desk Top, TV
WBG
ECPE workshop June 2016
24
WBG DEVICE PENETRATION IN PFC
SiC
SiCtransistors could be adopted
instead of SiC-based
diodes
• PFC was the first application targeted by SiC devices, which it hasaddressed since 2001. This application is perfectly matched withSiC diodes because they provide virtually zero reverse recoverycurrent:
• Improved power conversion efficiency
• Reduced losses
• Smaller modules
• Less EMI noise
• Market opportunities for SiC devices
• Primary: SiC diodes in both high-end industrial and consumersegments.
• Secondary: SiC MOSFETs
• According to industrial sources, with advanced topologies, SiC MOSFETs could be adopted instead of SiC based diodes, especially for high-end industrial segments.
80 kHz Si 200 kHz SiC
As courtesy of Cree
ECPE workshop June 2016
25
WBG DEVICE PENETRATION IN PFC
GaN
600V GaNHEMT-basedPFCs have
been prototyped.
As courtesy of Transphorm
Totem-pole bridgeless boost topology
source: IR, Infineon
• Low voltage GaN devices (<600V) are expected to penetrate into low power segments of the PFCmarket as the cost of GaN transistors is going to be competitive with MOSFETs.
• At 600V, almost all GaN HEMT suppliers that exist, such as Transphorm, Panasonic, Infineon and GaNSystems, have prototyped GaN HEMTs for PFC.
• Totem-pole bridgeless PFCs are commonly adopted for demonstrations. Efficiency as high as 99% hasbeen demonstrated.
• The full benefit of GaN transistors can’t be realized by just plugging them into existing power supplies.
• For optimization, the following factors needed to be taken into consideration.
• Topology
• Control strategy
• Magnetics
• Operating frequency
ECPE workshop June 2016
26
WBG FOR PFC MARKET: CONCLUSIONS
• Using SiC diodes in PFC leads to improved power conversion efficiency, lower switching losses and reduced
physical size. All these benefits have made PFC the first adopter of SiC diodes, creating a $64M SiC diode market
in 2014, representing more than 48% of the SiC device market.
• The growth of SiC diode volume is expected to continue but slow down, as both SiC- and GaN-based transistors
begin to challenge.
• We are expecting SiC transistors to enter the PFC market around 2016 but to be limited to high-end industrial
applications.
• GaN transistors are expected to enter all segments of PFC, from consumer to industrial applications. Low power
segments will drive large volumes of low voltage GaN transistors, leading to spectacular growth. From 2014 to
2020 CAGR is 180% in our nominal scenario, 192% in the accelerated scenario.
• SiC and GaN transistors will compete for high-end industrial applications, where 650V GaN can be used. GaN
should enter this segment around 2017, after SiC. A higher penetration rate is expected for GaN as the price is
more competitive. We consider that GaN and SiC will coexist in the sector as the price of SiC transistors is
going to drop more quickly.
ECPE workshop June 2016
28
PHOTOVOLTAICS
Three main stationary PV segments
There are three main segments for stationary PV application.
• PV application categories:• Stationary
• Portable
• Consumer
• Transport
• The largest PV market is represented by three stationary application segments:
• Residential houses
• Commercial and industrial buildings
• Ground-mounted power plants
• The size of PV inverter(s) used is not directly related to the size of a PV installation!
• For example, a 1 MW PV installation can use two 500kW inverters or dozens of 20–30 kW inverters, depending on the installation’s electrical design and installers priorities.
Residential installationsCommercial and industrial
building installations
Ground-mounted power
plants
Typically < 10 kW 50 kW–1 MW 1–100 MW
Three main segments of stationary PV marketYole Développement report Opportunities for power electronics in renewable electricity gener
Strong growth in China,
Japan and the USA
ECPE workshop June 2016
29
PHOTOVOLTAIC INVERTERS
PV inverter classification
Enphase
10 kW400 W 100 kW
Input Power (DC)
Ingeteam
Ingeteam
Microinverters
• Compact design
• Connected to each PV panel
• Single-phase or three-phase
string inverters
• Often designed for interior
installation
• String inverters
• Growing share of three-phase
inverters
• Lightweight, high-energy density
product sought to lower installation
costs
• Central inverters
KACO
Delta
DELTA
SMA
ABB
SamilPower
Samil Power
Samil Power
i-Energy
< 10kW 10kW–70kW >70kW
SMA
SMA
Sungrow
Sungrow
Involar
<300W
Residential ResidentialResidential &
Commercial
Commercial & Utility
scale power-plants
There are 4 PV inverter classes regarding their nominal power.
The inverters with the same nominal power can be used for different types and sizes of PV installations.
Classification of PV inverters according to the nominal power value and application. Examples of products.Yole Développement
SiC diodes SiC product available
Sungrow
ECPE workshop June 2016
30
SIC AND GAN POSITIONING:
Component voltage and system power
GaN players focus on low voltage, low power devices, whileSiC is being used in higher voltage and power ranges.
ECPE workshop June 2016
1kW 5kW 20kW 50kW 150kW 1MW
1,700V
900V
600V
Residential
Commercial
Solar farms
IGBT
MOSFET SJ MOSFET
MOSFET
IGBT
IGBT
IGBT
SJ MOSFET
GaNSiC
1,200V
Yaskawa (JP)
4.5kW
– announced
in 2012,
launched in
2014
SMA (DE)
20kW
AEI (US)
20kW
Omron (JP)
5.5kW (9.9kW)
2014 prototype
Sanix (JP)
9.9kW
based on Cree
MOSFETs Delta (TW)
11kW
SiC MOSFET
from Cree
Wolfspeed (Cree) ’s
(US) demonstrator
50kW
1,200 V MOSFETs
08/2014: Transphorm
Partners With Tata Power
Solar to Introduce India’s
Most Efficient Solar Inverter
31
POWER ELECTRONICS CHALLENGES IN PHOTOVOLTAICS
Less weight, lower volume, less noise
SiC helps to make the
requirement for PV in
residential
• Less weight:
• Easier fixation on the wall
• Simpler logistics
• Easier installation
• Lower volume:
• Simpler logistics
• Easier installation
• Larger choice of possible installation locations within a house.
• Less noise
• Fan-free inverter or with variable fan speed
• Larger choice of possible installation locations within a house.
ECPE workshop June 2016
In an article, Wolfspeed claimed that “by
enabling a lower overall weight and a higher
power density, SiC-based inverters can
reduce the typical installation costs for a
PV inverter by 40%. ”
As courtesy of Wolfspeed (Cree)
IGBT
SiC
32
SIC IN MICRO-INVERTER
Enphase’s vision
The use of new
topology get rid off SiC
diode, leading to a declining
market segments.
• Market leader of micro-inverter Enphase confirmed that they haveused over 20 million SiC 1200V diodes in the passing years.
• However, they are changing the topology, which does not needhigh-voltage diodes and they are now using Si MOSFETs instead.The new topology provide four-quadrant capabilities (for reactivepower and for storage), which can not have diodes in the powerpath.
ECPE workshop June 2016
“SiC MOSFETs and GaN HEMTs are extremely interesting in our application, assuming that both
devices can demonstrate competitive cost and excellent reliability…we believe that GaN has two distinct
advantages in our application
First, our topology uses bidirectional switches. GaN HEMTs have the capability to be natively
bidirectional. This gives an inherent ~3X advantage over SiC or Si, due to the reuse of the same
channel for both voltage blocking polarities.
Second, a number of companies have emerged that are developing GaN integrated power circuits.
This is one of the most interesting phenomena happening in our sector.
These advantages are specific to micro inverters (or 100W-class power electronics) and likely do
not port well to traditional inverters.
33
WBG IMPLIMENTATION AS FUNCTION OF PV CLASSIFICATION (AS OF 2016)
SiC is leading in PV applications
ECPE workshop June 2016
Enphase
10 kW400 W 100 kW
Input Power (DC)
Ingeteam
Ingeteam
Microinverters
• Compact design
• Connected to each PV panel
• Single-phase or three-phase
string inverters
• Often designed for interior
installation
• String inverters
• Growing share of three-phase
inverters
• Lightweight, high-energy density
product sought to lower installation
costs
• Central inverters
KACO
Delta
DELTA
SMA
ABB
SamilPower
Samil Power
Samil Power
i-Energy
< 10kW 10kW–70kW >70kW
SMA
SMA
Sungrow
Sungrow
Involar
<300W
Residential ResidentialResidential &
Commercial
Commercial & Utility
scale power-plants
Classification of PV inverters according to the nominal power value and application. Examples of products.Yole Développement
Sungrow
SiC diodes are
implemented,
but the market
is expected to
declined,
challenged by
new topology
GaN is more
advantageuous .
SiC diode + SiC MOSFET
(Booster stage)
SiC diode + IGBT (inverter stage)
• Cost of SiC
remains too high
• Limited
availability of
high current
rating SiC
devices
34
WBG FOR SOLAR POWER CONCLUSIONS
• In 2009, 2010 and 2011 the SiC PV market comprised mostly SiC diodes used in micro-inverters. Enphase (US)
today has probably 80% of this segment, using Cree diodes. Some other products use hybrid configurations, such
as Si IGBT + SiC diodes, which have also contributed to the market.
• 2012 saw the first introduction and sales of full-SiC solutions. Since then, some other companies, such as Delta,
Sanix and Mitsubishi Electric have also implemented SiC devices in their products.
• At the R&D level, Cree has demonstrated a proof-of-concept 50kW PV inverter in a 50 kg package, with a
power density of 1kW/kg.The inverter switches at 48kHz and allows 40% weight savings.
• At the end 2014, Yaskawa announced it would launch mass production of 4.5kW PV inverters using GaN devices
developed by Transphorm. GaN therefore officially entered the PV market. No other manufacturers have shown
a clear intention to follow this commercial move so far.
• SiC diodes will spread through PV. SiC transistors are expected to be implemented for high power residential and
commercial applications, while GaN will be more attractive for low power residential applications, where 600V
devices are used.
• In this context, we are quite confident that PV will continue to be an important market for SiC. We estimate that
the market for SiC will be about $146M in 2020. The adoption of GaN will be much slower, with a limited market
of $2.6M in 2020.
ECPE workshop June 2016
36
EV/HEV
Far from just pure electric vehicles, today we find many different hybrid cars in the market.
Commercially available today
Micro hybrid
Mild hybrid
Full hybrid
Large commercialization after 2015
Plug in Hybrid (PHEV)
Pure electric (EV)
5 – 10%
10 – 25%
25 - 40%
50 – 100%
100%
Fue
l eff
icie
ncy
& C
O2
red
uct
ion
be
nef
it in
%
Toyota Prius
Honda Civic
Citroen C2
GM Chevy Volt
Nissan Leaf
Car examples(non-exhaustive list)
Source: Yole Développement
4 - 20 kW
30 - 75 kW
3 - 8 kW
70 - 100 kW
70 - 100 kW
Different levels of electrification
ECPE workshop June 2016
37
Converters SSVMild
HEV
Full
HEV
PHEV (with
EREV)
EV (BEV
or FCV)
1. Start/stop moduleMOSFET
1.5 to 10kW
Av: 3.5kW
2. DC/DC converter 14V (toMOSFET – 1.5 / 3kW – Av: 2.25kW
3. DC/AC inverter ( + DC/DC
booster option )
MOSFET or
IGBT
5 /20kW
Av: 15kW
IGBT – 20 / 150kW
Av: 70kW
4. GeneratorIGBT – 20 / 40kW
Av: 30kW
5. Battery charger
MOSFET - 3/6kW – Av: 4.5kW
and then
IGBT - 10 / 20kW – Av: 15kW
Total average
power / car 3.5kW 17.25kW 52.25kW 56.75 to 102.5kW
(for a single motor setup)
These applications are specific to EV/HEV. Standard ICE power device applications such as oil pump, steering, braking and HVAC are not considered.
Auxiliary inverters have not been considered because they use few power devices.
DIFFERENT TYPES OF ELECTRIFIED VEHICLES
Device types and power levels
WBG devices could
replace Si-based IGBTs
and MOSFETs in
EV/HEV applications.
Could be replaced by WBG
ECPE workshop June 2016
38
CONVERTERS & INVERTERS IN EV/HEV
Where are SiC & GaN?
The choice of SiC or GaN in
EV/HEV is complex.
• GaN and SiC arecandidates for newdevices for invertersand converters inEV/HEV.
• Technologicallyspeaking, SiC is used forhigh-power DC/ACinverters and GaN isbetter adapted to low-power DC/DC andAC/DC converters.
• However, the choice ofSiC or GaN is morecomplex and dependson numerous criteria.
• SiC technology mightalso be implemented inlow-power convertersdue to GaN’scomparative lack oftechnology maturity.
DC/DC
boost
converter
DC/AC
Inverter
Powertrain
Electric
motor
DC/AC
inverter
AC/DC
converter
200-
450VDC
DC/AC
Inverter
Air conditioner
Torque to
drive wheels /
braking
energy
recovery
DC/DC
converterEngine
generator
12V
battery
AC electric
accessory load
Toyota only
High voltage
battery
Power device positioning within an EV/HEV
Yole Développement
Battery
charger
DC electric
accessory load
ECPE workshop June 2016
39
YOLE’S VISION OF WBG PENETRATION IN EV/HEV BEFORE 2020
GaN vs SiC *
GaN and SiChave
opportunities in different applications.
On-board charger topology (3 or 7kW)
The topology of on-board fast charger is similar to that of inverter: SiC possible
400V
Standard InverterTopology (generator)
400V
230V
Already SiC
SiC Possible
SiC Possible
GaN or SiCTransistor + SiC diode
GaN or SiCTransistor
LV-HV DC/DC converter topology
GaN or SiC Transistor + SiC diode
GaN Possible
DC/DC booster
SiC Possible
on-board
Wireless charger
ECPE workshop June 2016
* Our vision is based on the current status, the situation could evolve with further development.
40
ROADMAP OF IMPLEMENTATION OF SiC DEVICES IN EV/HEV
As a function of SiC device maturity
SiC diodes are already used in on-
board chargers. Full SiC power
train solutions
require more maturity.
AC/DC
charger
DC/DC
Diode
Switch+
diode
DC/AC
Powertrain
Year
Power
2kW
3kW
7kW
55kW+
2015 2018 2023
900V/30A from Cree could be well-
positioned for this segment
Introduction of SiC components into
devices in EV/HEV (axes not in scale)Yole Développement
ECPE workshop June 2016
41
IS THE AUTOMOTIVE INDUSTRY READY TO EMBRASSE THE SIC TECHNOLOGY?
Almost all OEM and tiers1 are looking at and evaluating SiC.
It is a question of time to market!
ECPE workshop June 2016
SiC is regarded as a promising material that can
help reduce the PCU size and weight, and improve
the fuel efficiency of the vehicle because of its low
loss and high-frequency operation
characteristics… The development of SiC devices
for on-board applications is continuing as a key
theme for the future of the automotive industry
and in preparation of the energy revolution to
come.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
VOL. 62, NO. 2, FEBRUARY 2015
* Ming Su, Performance and cost considerations for SiC-based HEV traction
inverter systems (WIPDA, 2015)
The high prices of SiC remain a major obstacle for its traction
inverter application. Fuel savings enabled by SiC MOSFETs could
help offset some of that effect, but substantial further cost
reduction is needed before the automotive industry is ready to
adopt them for mainstream vehicles. In the meantime, no
commercial SiC MOSFET is yet available at the current
ratings required for the
HEV inverter systems, while the performance and reliability
aspects also leave room to be further improved or verified.
42
TYPICAL PHASES OF EVOLUTION IN AUTOMOTIVE
From development to manufacturing
• In the automotive industry, the cycle from development* to manufacturing is very long.
ECPE workshop June 2016
Development Qualification Manufacturing
Internal tests and evaluation of
WBG devices:
3 years
* Research is not included if
devices are developed internally
Installation of WBG
devices and road test:
3–5 years
Different car makers are at the
development stages, testing
both SiC and GaN devices.
Toyota has pioneered road
tests on SiC. But it will still
be some time before it goes
into manufacturing.
Large volumes of devices
will be needed.
According to Yole, the
ramp up of WBG devices
for automotive will be
after 2020.
44
SEGMENTATION
By train type
•There are four main train types:
•Electrical multiple units (EMU):Trains where inverters are located under each car, mostly regional trains
•High speed trains: While some are power car format trains, these are increasingly also EMUs. This is a growing trend: we expect90% of all trains to be EMUs by 2016.
•Trams
•Underground/‘metro’ trains
• This segmentation defines the voltage and current applied to the inverter.
There are three rail traction sub-applications: urban vehicles such as trams and underground/ ‘metro’ trains, regional and commuter trains, which are mostly EMUs, and high-speed trains.
High speed trainEMU
Power10kW 100kW 1MW +10MW
EMU train
Metro / Tramway
Speed
50mph
80kph
100mph
160kph
200mph
320kphHigh speed train
Power car
ECPE workshop June 2016
45
POWER DEVICES IN DIFFERENT TYPES OF TRAINS
Rail traction is an attractive target for IGBT and SiC FET power electronics
Power
range
Train
architecture
Power
devices
Power module
$/train value
Metro/Trams 100–700kW 2-4 inverters per train 1.7kV IGBTs
~$13k/train
(25-50 IGBT modules
per train)
Regional/
Commuter0.5–1MW
Mostly EMUs, up to 20
inverters per train
1.7/2.5/3.3kV
IGBTs
SiC FETs
(secondary target)
High-speed trains
(HST)1-2MW
EMUs, up to 24 inverters
per train
2.5-6.5kV IGBT
Implementation of
SiC FETs (primary
target)
~$130k/train
(80-120 modules per
train)
Power cars, which are
becoming less common
•Rail traction needs very high power devices
•High voltage IGBTs are therefore used
•Rail traction power chains will be one of the first targets for SiC devices
ECPE workshop June 2016
46
SIC IMPLEMENTATION IN RAIL TRACTION
Full SiC or hybrid Si/SiCinverters for rail traction are already
available
Hybrid Si/SiC Full SiC. 3.3kV
Full SiCSi IGBT/Diode
Si IGBT/Diode
Si IGBT/Diode
Si IGBT/Diode
Si IGBT/Diode
2012 2015
Waiting for device availability to start R&D
R&D on SiC devices, hybrid module road test in Kunming;construction of a SiC line which is planed to be finished by 2017
Checking reliability, availability, device maturity
Prototype full-SiC with Rohm& Danfoss. 1.7kV
2013 2014
Current
Prototype
Market
Hybrid Si/SiC Full SiC
Hybrid Si/SiC Hybrid Si/SiC
Hybrid Si/SiC 1.7 kV
ECPE workshop June 2016
Checking reliability, availability, device maturity
2016
47
FULL SIC INVERTER FOR RAIL TRACTION
Using full SiCsolutions leads
to clearefficiency
improvementsand
size/weightreduction.
• In late 2013, Mitsubishi Electric launched a 3.3 kV, 1500A full SiC inverter
• Mitsubishi’s all SiC traction inverter system has approximately 55% less switching loss than itsconventional inverter system incorporating IGBT power modules.
• Size and weight are reduced by about 65% compared to conventional inverter systems with IGBTpower modules and about 30% compared to existing hybrid inverter systems with SiC diodes.
• The number of components is reduced by integrating SiC transistors and diodes into one package perinverter circuit phase
Courtesy of Mitsubishi Electric Corp.
Mitsubishi’s solution (1/2)
ECPE workshop June 2016
Main specification of inverter system
Input voltage 1,500V DC
Main circuit system Two-level PWM inverter with regenerative
brakes
Control system Four traction motors with 180kW, parallel
control
Cooling system: Self-cooling
48
FULL SIC INVERTER FOR RAIL TRACTION
Using full SiCsolutions leads
to clearefficiency
improvementsand size/weight
reduction.
• The full SiC solution was installed in a 1000 series urban train operated byOdakyu Electric Railway Co., Ltd on a trial basis.
• In June 2015, the company announced that after more than four months oftesting in actual commercial service, the full SiC solution achieved anapproximate 40% power consumption saving compared to a train using aconventional gate turn-off thyristor traction inverter:
• 17% power savings during powered operation
• Increase from 34.1% to 52.1% in power regeneration ratio, calculated as powerfrom regenerative brakes to catenaries divided by total electric power to drivethe rail car
• 40% power savings overall
Courtesy of Mitsubishi Electric Corp.
Mitsubishi’s solution (2/2)
ECPE workshop June 2016
• In the same month, the company also announced tests on traction converter/inverter systems with
full SiC modules on N700 Shinkansen bullet trains for Central Japan Railway Company (JR-Central).
Main specifications
Input voltage: 2,500V AC
Main circuit system:Large-capacity all-SiC power modules
Three-level PWM inverter with regenerative brakes
Control system: Four traction motors with 305kW, parallel control
Cooling system: Self-cooling
Retrofitted Odakyu
1000 series train an
49
HYBRID SIC INVERTER FOR RAIL TRACTION
Hybrid solutions are adopted by
different players for
rail applications.
• In 2012, Hitachi developed a SiC hybrid inverter for railcars.
• The hybrid module is about 2/3 the size of Si-basedones.
• The inverter is 40% smaller and lighter and offers35% less power loss.
• Using 3.3 kV/1200 A Si-SiC hybrid module
• In Sep 2014, Toshiba delivered SiC Variable VoltageVariable Frequency (VVVF) traction inverters
Courtesy of Hitachi
Toshiba Hybrid SiCVVVF traction inverter
ECPE workshop June 2016
50
SIC FOR AUXILIARY POWER IN TRAINS
SiC solutions are used for
auxiliaryapplications.
• In 2013, Mitsubishi delivered SiC auxiliary power supplies for rail cars.
• 30% less power loss
• 20% smaller and 15% lighter.
• Reduction of transformer noise by 4dB due to a 35% improvement in the distortion rate of outputvoltage waveforms.
• Systems are installed for test operation in new Type 1000 railcars of Tokyo Metro's Ginza Linesubway.
• 2015, Alstom launched SiC-based auxiliary converters.
Alstom Auxiliary convertersMistubishi SiC auxiliary power supply
systems for railcars
ECPE workshop June 2016
http://www.alstom.com/products-services/product-catalogue/rail-
systems/components/auxiliary-converters/
51
HYBRIDVS FULL SIC SOLUTION IN TRACTION
Mitsubishi’s vision
According to Mitsubishi, its
full SiCsolution is
used for high speed
applications, whille hybrid solutions suit
the rest better.
Courtesy of Mitsubishi Electric
ECPE workshop June 2016
52
CONCLUSIONS
SiC penetration in trains
ECPE workshop June 2016
• The voltage range of devices for rail application is 1700 V, 3300 V, 4500V, 6500 V, which is more suitable for SiC devices.
• In 2012, Hitachi released a hybrid SiC/Si inverter for rail cars that is compatible with 1,500V DC overhead power supplies
• At the end of 2013, Mitsubishi Electric launched a 3.3 kV, 1,500 A traction inverter system which incorporates the first all-SiC power modules made with SiC transistors and diodes.
• The full SiC solution has been tested in an actual commercial service in Tokyo metro and proved to achieve an approximate 40% saving in power consumption. The next test will be on Shinkansen high-speed bullet trains.
• As it is now recognized that SiC based modules significantly reduce inverter power loss, size and weight, we are expecting other rolling-stock manufacturers to follow Mitsubishi and Hitachi. Toshiba and Alstom have launched their SiC-based solutions in 2014 and 2015, respectively. CSR is conducting R&D on SiC devices, and plans to test Si/SiChybrid modules soon.
• On the other hand, similar to wind turbine applications, reliability of SiC transistors has been questioned by some. The doubts on the long term reliability of SiC devices slows down wide adoption of full SiC solutions in trains.
• In this context, we forecast that the implementation of SiC in trains will expand, mainly with hybrid solutions at 1.7 kV.
54
COMMERCIAL SIC DIODE PRODUCTS (1/2)
Date introduced to the marketplace
Before 2009, the market
wasdominated by
Cree and Infineon.
2003 20062002 2005 200820072001 2009
3rd gen. SBD
Feb 09
600V SBD
Feb 09
1.2kV SBD
Feb 09
1.2kV SBD
Feb. 2007
600V JBS
July 2009
1st gen. SBD
20012nd gen. SBD
May 2005
600V/10A SBD
Jan 2002
First 600V SBD
June 2001
600V/20A SBD
Aug. 2002
First 1.2kV SBD
Feb. 2003
(Next slide)
ECPE workshop June 2016
55
COMMERCIAL SIC DIODE PRODUCTS (2/2)
Date introduced to the marketplace
More playershave come
into the playgrounds.
Dual 600V SBD
Jan. 2014
650V/12A SBD
April 2013
2011 20132010 2012 201520142009
3rd gen. SBD
Feb 09
600V SBD
Feb 09
1.7kV SBD
April 2010
SBD
May 2010
1.2kV SBD
Feb 09
1.2 – 2.4kV SBD
Dec 2010
600V JBS
July 2009
600V SBD
Jan 2012
SBD Gen 2
July 2012
5th gen. SBD 650V
Sept. 2012
Based on thin-wafer
1.2kV SBD
Sept. 2012
1.2kV SBD
Nov. 2012
1.2kV/15&30A SBD
Mar 2013
600V & 1.2kV SBD
Sept 2013
8kV SBD
Nov 2013
1.7kV / 50A SBD
March 2014
5th gen. SBD 1,200V
July 2014
600V SBD
Jan, 2014
600V 10ASBD
April 2014
650V SBD
Jan. 2014
ECPE workshop June 2016
56
COMMERCIAL SIC TRANSISTOR PRODUCTS
More and More SiCtransistors availables.
2010 20122009 2011 > 20142013
1.2kV JFET. Q2 2012
1.2kV / 20A MOSFET
May 2012
600V & 1.2kV
MOSFET
Dec 2010
1.2kV Noff JFET
Late 2008
1.2kV Noff BJT
2011
1.2kV MOSFET
Jan 2011
1.7kV & 1.2kV / 50A
MOSFET. May 2012
Prototype
Production
650V JFET
May 2012
1.7kV Noff JFET
April 2010
1.2kV Non JFET
April 2010
1.2kV Non 45mΩ
JFET. May 2011
6.5kV Thyristor
2011
1.2kV MOSFET
+ internal SBD
July 2012
1.2kV / 6A BJT
May 2008
1.7kV Noff BJT
Nov 2012
1.2kV / 6A BJT
Nov. 2012
1.2kV/10A
MOSFET
Feb 2013
1.2kV/35A
MOSFET
+ co-packSBD
Sept 2013
1.2kV / 45A MOSFET
March 2014
1.2kV MOSFET
20 mΩ. May 2014
1.2kV/50A MOSFET
June 2014
1.2 kV/ 8A JFET
March 2014
ECPE workshop June 2016
57
SIC POWER DEVICES
Those have been proposed
DifferentSiC-basedstructures have been developed.
Jpn. J. Appl. Phys 54, 040103 (2015)ECPE workshop June 2016
58
SIC POWER DEVICES
Which companies?
Among the different
structures studied, most of them have been commercialized.
Upon demand
ECPE workshop June 2016
Coming soon
Pre-releasing
59
SIC MODULE PRODUCTS
There are two types of modules: hybrid and full SiC modules.
Module
Hybrid module/IPM Full SiC module/ IPM
Mainly IGBT, but there
are also MOSFET
products
SiC Diode Si
transistors
SiC DiodeSiC
Transistors
Mainly SiC MOSFET
IPM: Intelligent Power Module
Usually used the same packaging as IGBT
Develop innovative power module
packaging to exploit the superior
attributes of SiC
• High power density
• High frequency
• High temperatureECPE workshop June 2016
60
FULL SIC MODULE PACKAGING DESIGN
There are a wide range of module packaging on the marketfor full SiCmodules.
ECPE workshop June 2016
1200V, 35A/50A/75A
1700V, 25A, 35A, 50A
1200V, 120A, 13 mΩ
Copper baseplate and
aluminum nitride
insulator
1200V, 325A, 3.6 mΩ:
AlSiC baseplate and
Si3N4 AMB insulator,
enhancing ruggedness with
respect to thermal cycling
• 600V, 75A Package compatible with
the conventional products
Mistubishi
• Incorporates SiC MOSFET with
current sensor and built-in drive
circuit and protection functions
1200V, 100A,
Panasonic + SanRex:
1200V/150A
61
COMMERCIALLY AVAILABLE IPM EXAMPLE
SiC suppliers work on more integrated solution to facilitate the adoption of SiC by the integrators.
ECPE workshop June 2016
Full SiC module for home appliances (600V, 20A) : sampling since 2012, commercially shipment
since July 2014:
• Power loss is reduced by about 45% compared to products using Si.
• The adoption of SiC achieves up to 40 kHz high-frequency switching, contributing to the
downsizing of peripheral components such as reactors and heat-sinks.
• The installation of a PFC and driving IC contributes to downsizing through the reduction of
mounting surface area and simplified wire patterning.
• Adoption of the same package as the dual in-line package intelligent power module of
Mitsubishi
62
ADOPT SI MODULE DESIGN FOR SIC (1/2)
LinPak is becoming the latest standard for IGBT for high voltage and some suggest that it could be used for future SiCsolutions for high voltage applications
• Since September 2014, leading power modules makers have been launching their new high-voltagemodules
• Those new packages have reduced interconnects in order to increase reliability with high voltages
Hitachi nHPD²
Infineon XHP ABB LinPak
Mitsubishi
1,700 to 6,500V
3,300 to 6,500V
3,300 V, 4,500V and
6,500V
1,700 to 6,500V
Package compatibility with
products of Infineon
Technologies
Announced the beginning of the
development
Package compatibility with
products of Hitachi
Fuji announced that « High power next Core (HPnC) » moduel, similar to linPak or
nHPD² for Si-IGBT + SiC diode hybrid module is under development. ECPE workshop June 2016
63
ADOPT SI MODULE DESIGN FOR SIC (2/2)
Case study: ABB LinPak module
LinPakmodule has a very low parasitic inductance thanks to design optimization
• The main target for this new power module development was to reduce inductance
• Thanks to its specific geometry (low distance between connections) and the use of busbar, total module inductance is even smaller
• Over-voltage is also much lower compared to previous high-voltage power module generation Source:ABB presentations
ECPE workshop June 2016
64
FULL SIC MODULE DESIGN (1/2)
Some players chose to adopt a completed new design for SiCmodule.
ECPE workshop June 2016
2 in 1, 1200 V, 100A
New Packaging Technology
• 1/4 volume compared to conventional package
• Wire-bonding-less connection: Cu pin technology
• Silver sintering or soldering
• Low thermal impedance DCB substrate
• Low thermal resitance with thicker Cu block
bonded to SiN) ceramic substrate
• New epoxy resin: glass transition temperature of
over 200 °C.
65
SIC MODULE PACKAGING (2/2)
Lowinductance and high temperaturepackaging are key issues for WBG module packaging.
ECPE workshop June 2016
APEI* HT-3000 WBG power module: 1200 V,
+400A, 200+°C, industry standard footprint.
*: acquired by Wolfspeed in July 2015
Parasitic inductance comparison between the APEI’s
HT-3000 and other power module types
The new product (CAS325M12HM2) released by Wolfspeed in 2016 is based on this design.
(175°C) The design is optimized to reap the benefits of SiC technology, the boasts a 66%
reduction in module inductance to 5.5 nH, compared to competitive products at 15 nH, as claimed
by the company.
66
EVOLUTION OF JUNCTION TEMPERATURE INSIDE POWER MODULES
We expect SiCjunction temperature to evolve quickly than Si. But it will highly depend on application. In some applications, it is prefered to maintain at a temperature as low as possible for an optimal efficiency.
Junction temperature (°C)
Time
1980 1990 2000 2010 2020 2030
250
200
150
100
SiC materials
Si
• High temperature isone of the benefits ofusing SiC carbidematerials.
• Most of the productstoday are still at 150°C,but there are 175°Cproducts already on themarket. Fuji’s full SiCmodules could be ratingat higher 200°C (too beconfirmed).
• We expect SiC junctiontemperature to evolvequickly than Si. But itwill highly depend onapplication. In someapplications, it isprefered to maintain ata temperature as low aspossible for an optimalefficiency.
Yole Développement - 2016
ECPE workshop June 2016
BSM180D12P3C007 (
67
SIC POWER STACK
Some suppliers provide plug-and-play SiCpower stack solutions, which reduce the R&D efforts that the end users need to invest.
ECPE workshop June 2016
GE is providing SiC Power block (power stack) solution.
This plug-and-play unit enables customers to launch
products more quickly, and at lower cost vs. conventional
design approaches.
The definition of power stack may vary from player to player, but the most agreed-upon illustration is an
assembly of modules (commonly IGBT) with passive components (busbars, capacitors, resistors,
etc. ), cooling systems and drivers designed to attain optimum efficiency.
The advantage of power stack is:
• Modularity: several power stacks can be connected in serial/parallel to reach higher power levels.
• Multi-application: the same standard power brick can be (re)used for different applications
• EDEM3 – AgileSwitch SiC Gate
Driver
• ROHM BSM300D12P2E001 SiC
MOSFET (1200V/300A)
• Device Programmer Kit
This designe is a direct replacement for common
IGBT-based power stacks and offers higher switching
frequency and power output in an SiC with air-cooled
heat sink package. Includes: • 1200V/300A Gate Driver Kits
• INEX3A3 – AgileSwitch SiC Interface Board
• High speed current sensors and bus bars
• Mersen 1100VDC/510uF Film Capacitor Bank w/
Bracket & Snubbers
• Mersen hollow fin heat sink with embedded heat pipes
68
BUSINESS MODELS IN SIC POWER INDUSTRY (1/2)
ECPE workshop June 2016
SiC Substrate Device Design SiC EpiDevice
processing Module
packagingSystem
And more…
Power SiC
model 2
Power SiC
model 3
Power SiC
model 4
Power SiC
model 6
Power SiC
model 5
Power SiC
model 1
Sub system
69
SPECIAL FOCUS ON CHINA
China is investing massively in semiconductor industry and has strong policy support.
SiC power is included.
• Under a grand plan announced in 2014, the
government will muster $100 billion-$150 billion in
public and private funds to build an indigenous
semiconductor industry.
• In recent years, state-owned firms and various public
and private funds have been rushing to buy, invest in
or do deals with overseas microchip firms, of course
including popular new and green material, SiC
related chip companies.
In 2015, China's State Council unveiled a national
plan recently, dubbed "Made in China 2025". It is
the first 10-year action plan designed to
transform China from a manufacturing giant into
a world manufacturing power based on “smart
manufacturing” and “industry 4.0”.
Several axis are related to the
power industry.
ECPE workshop June 2016
70
SURGE OF CHINA IN SIC WAFER PRODUCTION CAPACITY
Announced Capacity
Chinese players have already more than 150 000 wafers per
year capacity.
• SICC: The potential production capacity will be 80k wafers/year in the first phase and will be 270k wafers/year in the second phase.The objective is to reach 350k wafers per year in 2016.
• Tankeblue: 70 000 wafers per years at the end of 2014, 6 inch demonstrated
• CETC: 20 crystal growth equipements, 20 000 wafers growth capacity
• Hebei Tongguang: 4 inch demonstrated at the end of 2014, mass production planed for 2015, to be confirmed
Beijing, ChinaSource: Yole Développement
ShanDong,
China Hebei Tongguang,
Logo to be confirmed
No.2 Research Institute
ECPE workshop June 2016
71
SPECIAL FOCUS IN CHINA
• Chinese government has given significant funding to SiC development and industrialization. Since 2006, several companies have gradually entered SiC field. Chinese companies cover the entire value chain from SiC devices to applications
China is trying to cover the entire value chain of SiCdevices.
And more to
come…
Hebei
Tongguang
New comers in 2016
Wafer Epi Device System
ECPE workshop June 2016
73
DIFFERENT BUSINESS MODELS IN GAN POWER
So far, epiprocess are mainlyintegrated.
ECPE workshop June 2016
Si Substrate Device Design GaN Epi Device processing
And more…
Power GaN
model 1
Power GaN
model 2
Power GaN
model 3
And more…
And more…
Power GaN
model 4
And more…
Power device
players lack of
GaN epi IP
Power device
players lack of
GaN epi IP
74
GAN ON SI EPI-WAFER BUSINESS MODEL
The competition will be intense for a market that is NOT well established.
ECPE workshop June 2016
Substrate Device Design Epi Device processing
And more…
Power GaN
model 1
Power GaN
model 2
Power GaN
model 3
And more…
And more…
Power GaN
model 4
And more…
Power device
player lack of
GaN epi IP
LED chip supplier with overcapacity
• Substrate suppliers want to move up the value
chain.
• Foundries want to move down the value chain.
• Some LED chip suppliers with overcapacity have
shown interest in entering the battlefield.
Power device
player lack of
GaN epi IP
75
FINANCIAL MOVES IN GAN MARKET 2015
2015
Recent financial moves indicate market
confidence in the GaNbusiness.
• In 2015, around $100M in investments have been made in different GaN startups, as indicated in the following table.
• This financing will enable these companies to ramp up into production and expand their sales and marketing activities for further growth.
• Yole considers that these investments reflect confidence in the GaN device market and investors’ willingness to provide funds to accelerate production capabilities.
Company
name Investment Date Venture funds Note
GaN Systems $20M May 2015
Cycle Capital Management
BDC Capital
Beijing-based Tsing Capital
Chrysalix Energy Venture Capital RockPort
Capital.
Series C,
Series A & B:
Undiscolased
amount
Exagan $6.3 M (€5.7M) June 2015
Technocom2 (Innovacom)
CM-CIC Innovation (Group)
IRDInov (a regional seed investor)
CEA investissement (CEA)
Soitec
First round
Transphorm $70M June 2015
Led by global Investment firm KKR.
Fujitsu, Google Ventures,
Kleiner Perkins Caufield & Byers
Total investment
$221.2M in 9 round
ECPE workshop June 2016
77
SIC & GAN POWER DEVICE MARKET
to 2020
The GaNdevice
market isexpected to grow muchfaster than
SiC.
GaN CAGR 2014-2020: 95% !
SiC CAGR 2014-2020 : 22%
The total WBG device market is estimated at $139M in 2014 and expected to
be $743M in 2020, in a $12.7B overall device market.
* GaN nominal scenario is considered.
ECPE workshop June 2016
78
SIC DEVICE MARKET SHARE
Split by voltage range to 2020
Transistors’ market share
will start increasing
slowly around 2017.
The SiC market is currently dominated by 1.2kV and 600V diodes.
The implementation of transistors is coming, but slower than expected.
Transistors’ market share will definitely increase. ECPE workshop June 2016
Yole Développement
79
GAN DEVICE MARKET: SPLIT BY VOLTAGE RANGE
Nominal scenario
<200V devices are expected to representmore than80% of the
market.
The current GaN device market is mainly dominated by devices <200V. 600V devices are
expected to take off and keep growing. But the <200V market share will increase again when
GaN begins to replace MOSFETs in different applications and enables new applications.
ECPE workshop June 2016
80
SICVS GANVS SI
to 2020
Currently, the WBG
market is still small, but its share keeps increasing.
ECPE workshop June 2016
81
WIDE BAND GAP MATERIAL
Accelerator LimiterScientistDream
Optimistic
Performances are better
Obviously the next
generation
Designer Challenge
Realistic
How do use the device
How do catch the
performance
How Long to develop
Whychanging?
How to accelerate WBG adoption?
ECPE workshop June 2016
82
IS THE ECOSYSTEM READY FOR SIC POWER?
Many efforts are still needed to take full advantage SiCpower by the players in the power business.
ECPE workshop June 2016
Low Rdson
System size and
weight reduction
Fast switchingDevice
performance
System
benefits
Reduction of loss:
Efficiency
High temperature
operation
Long term
reliability?
High
temperature
packaging ?
Dielectric
materials ?
High-f
Managnetic ?
What is the
most adaptive
topology ? High
temperature
capacitor ?
Low
inductance
packaging?
Increased
EMI ?
Cost, cost,
cost !!!
High current
density
83
MAIN CHALLENGES OF SiC POWER INDUSTRY
From material to system integration
Material
• High Cost
• Limited wafer size
• High defect density
Device
• Low manufacturing yield
• High cost
• Long term reliability
• Multi-sourcing (No longer an issue for diode, but still for transistors as of 2016)
System
• How to integrate the active component (Driving, EMI, topology choices etc..)
• What are the available choice of passive components and dielectric materials?
• Dielectric materials
ECPE workshop June 2016
84
WHAT IS HAPPENING TO DEAL WITH THE CHANLLENGES?
From material to system integration
Material
• New SiC substrates suppliers with surge of capacity in China price reduction by competition
• Existing players expand production capacity cost reduction by increasing volumes
• 6 inch begin to enter into device production
• Both substrate and epi suppliers are trying to decreasing the wafer
• Alternative SiC substrates
• SiC growth furnace with technology transfer
Device
• Si compatible foundry services are available and foundry model is developing promising for cost reductions and giving the possibility of fab-less/fab-lite creation
• New generation of SiC devices with more device reliability proof
• New consortium to establish reliability standard for SiC
• More players are sampling SiC MOSFET (Infineon, GE, GTPT, Hestia-power…) with volume production scheduled in Q2 2016 to 2017 period
System
• More integrated solution and design support are proposed by device manufacturers (IPM, power stack, module with gate driver, etc…)
• More
• Questioning, Development in passive components and dielectric material suppliers
ECPE workshop June 2016
85
Volume increase
Cost decrease
Volume increase
Cost decrease
SOME INSIGHTS
Go into a virtuous circle, or disappear.
Disruptive material technology:
exfoliation, engineered substrates?
New slicing technologies..?
If there is subventions?
Driving by other applications (Example:
Cree’s LED business largely contributed to
the volume and cost reduction of SiC wafer)
Vertical integration up to end
products and consuming
internally
Consolidation of players on the market, works for
players at different level of value train
Good clients portfolio + well
understanding of end application
ECPE workshop June 2016
87
WBG IN THE HYPE CYCLE
Adopt from Gartner Hype Cycle concept
ECPE workshop June 2016
Technology
Trigger
Peak of
inflated
expectations
Trough of
Disillusionment
Slope of
enlightenment
Plateau of
productivity
Expectation
Time
SiC diode:
power conversion
SiC MOSFET:
power conversion
GaN HEMT
88
OPPORTUNITIES FOR THE INDUSTRY
Challenges means opportunities for the industry.
System integrators
Passive component suppliers
SiC devicessuppliers
SiCmaterialsuppliers
Crystal growth
equipmentsuppliers
Packaging Material suppliers
Test equipment suppliers
ECPE workshop June 2016
90
Biographies & contacts
Hong LIN
Dr. Hong Lin has worked at Yole Développement as a technology and market analyst since 2013. She specializes in compound semiconductors and provides technical and economic analysis. Before joining Yole Développement, she worked as an R&D engineer at Newstep Technologies. She was in charge of the development of cold cathodes made by PECVD for visible and UV lamp applications based on nanotechnology. She holds a Ph.D in physics and chemistry of materials
Pierric Gueguen
Dr. Pierric Gueguen is Business Unit Manager for power electronics and compound semiconductor activities at Yole Développement. He has a PhD in micro- and nanoelectronics and a master’s degree in micro- and nanotechnologies for integrated circuits. He worked as a PhD student at CEA-Leti in the field of 3D integration for integrated circuits and advanced packaging. He then joined Renault SAS, and worked for four years as technical project manager in the company’s R&D division. During this time, he oversaw power electronic converters and integration of wide band gap devices into electric vehicles. He is author and co-author of more than 20 technical papers and 15 patents.
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MEMS &
Sensors
LED / OLED
Compound
Semi.
Imaging Photonics
MedTech
Manufacturing
Advanced
Packaging
Energy storage and
battery management
Power
Electronics
FIELDS OF EXPERTISE
Yole Développement’s 30 analysts operate in the following areas
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4 BUSINESS MODELS
o Consulting and Analysis
• Market data & research, marketing analysis
• Technology analysis
• Strategy consulting
• Reverse engineering & costing
• Patent analysis
www.yole.fr
o Reports
• Market & Technology reports
• Patent Investigation and patent infringement risk analysis
• Teardowns & Reverse Costing Analysis
• Cost Simulation Tool
www.i-Micronews.com/reports
o Financial services
• M&A (buying and selling)
• Due diligence
• Fundraising
• Maturation of companies
• IP portfolio management & optimization
www.yolefinance.com
Blu Morpho
o Media
• i-Micronews.com website
• @Micronews e-newsletter
• Technology magazines
• Communication & webcast services
• Events
www.i-Micronews.com
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A GROUP OF COMPANIES
Market,
technology and
strategy
consulting
www.yole.fr
M&A operations
Due diligences
www.yolefinance.com
Fundraising
Maturation of companies
IP portfolio management & optimization
www.bmorpho.com
Manufacturing costs analysis
Teardown and reverse engineering
Cost simulation tools
www.systemplus.fr
IP analysis
Patent assessment
www.knowmade.fr
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OUR GLOBAL ACTIVITY
Yole JapanYole Inc.
Yole
Korea
40% of our business is in
EU countries30% of our business is in
North America
30% of our business is in
Asia
Blu Morpho
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SERVING THE ENTIRE SUPPLY CHAIN
Our analysts provide market analysis, technology evaluation, and business plan along the entire supply chain.
Integrators and
end-users
Device
makers
Suppliers: material,
equipment, OSAT,
foundries…
Financial investors,
R&D centers
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CONTACT INFORMATION
o Consulting and Specific Analysis
• North America: Steve LaFerriere, Director of Northern America Business Development, Yole Inc.
Email: [email protected]
• Japan: Yutaka Katano, General Manager, Yole Japan & President, Yole K.K.
Email: [email protected]
• EMEA: Jerome Azemar, Senior Analyst and Business Development Manager, Yole Développement
Email: [email protected]
• RoW: Jean-Christophe Eloy, President & CEO, Yole Développement
Email: [email protected]
o Report business
• North America: Steve LaFerriere, Director of Northern America Business Development, Yole Inc.
Email: [email protected]
• EMEA: Jerome Azemar, Senior Analyst and Business Development Manager, Yole Développement
Email: [email protected]
• Japan & Asia: Takashi Onozawa, Sales Asia & General Manager, Yole K.K.
Email: [email protected]
• Korea: Hailey Yang, Business Development Manager, Korean Office
Email: [email protected]
o Financial services
• Jean-Christophe Eloy, CEO & President
Email: [email protected]
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ECPE workshop June 2016
