AZ 3312 Photoresist - University of Arizona · AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD,

The information contained herein is, as far as we are aware, true and accurate. However, no representations or warranties, either express or implied, whether of merchantable quality, fitness for any particular purpose or of any other nature are hereby made in respect of the information contained in this presentation or the product or products which are the subject of it. In providing this material, no license or other rights, whether express or implied, are given with respect to any existing or pending patent, patent application, trademarks, or other intellectual property right.

AZ 3312 Photoresist (18cps)

Data Package

AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, SWG, and TARP are trademarks of AZ Electronic Materials.

AZ 3300 Photoresist i-line Resolution at Specific Film Thickness

0.5 0.6 0.7 0.8 0.9 1.0 ~ 1.5 ~ 2Resolution (µm)

Film

Thi

ckne

ss (µ

m)

7

6

5

4

3

2

1

AZ 3350-HS

AZ 3330-F

AZ 3322-HS 2D

AZ 3318-D

AZ 3312/3312-F


AZ 3300 Photoresist

AZ 3312 Photoresist (18cps)

High thermal stabilityGood process latitude in i-line, g-line, and broad bandResolution in i-line 0.6µm, in g-line 0.8µmExcellent for wet etch processes

AZ 3318-D Photoresist (30cps)

Dyed resistPrevents notching on substrates with high or varying reflectivityReduced swing curve


0

1

2

3

4

5

6

7

8

9

10

0 1000 2000 3000 4000 5000 6000 7000

rpm

Film

Thi

ckne

ss [µ

m]

AZ® 3312AZ® 3318DAZ® 3312-FAZ® 3330-FAZ® 3350-HSAZ® 3322HS 2D

AZ 3300 PhotoresistSpin Speed Curves


AZ 3300 PhotoresistFeatures & Benefits

◊

Sensitivity to g, h, and i-line wavelengths◊

Process relatively insensitive to bake conditions, develop times, and develop temperatures

◊

Compatible with inorganic and organic (w/ & w/o surfactant) developers

◊

Thermal stability to 125°◊

Good depth of focus, linearity, and photospeed for crossover applications

◊

Very high stability against particle generation◊

Excellent value for performance


AZ 3312 Photoresist (18 cps) Optical Parameters

◊

Refractive Index

Bleached 365nm 405nm 435nmn 1.6906 1.6655 1.6514k 0.0013 0.0003 0.0006

Unbleachedn 1.7082 1.6888 1.6930k 0.0333 0.0336 0.0217

Bake conditions: Soft bake 90°C/60 sec.PEB 110°C/60 sec.AZ 300 MIF Developer 23°C


AZ 3312 Photoresist (18 cps) Optical Parameters

◊

Dill Parametersi-line: g-line:

A = 1.1390 (µm-1) A= 0.6695 (µm-1)B = 0.0762 (µm-1) B= 0.0172 (µm-1)C = 0.0264 (cm2/mJ) C= 0.0186 (cm2/mJ)

◊

Cauchy CoefficientsA B C

Bleached 1.5869 0.011818 3.90E-06Unbleached 1.6005 0.011334 7.43E-04Bake conditions: Soft bake 90°C/60 sec.PEB 110°C/60 sec.AZ 300 MIF Developer 23°C


AZ 3312 Photoresist (18 cps) Optical Parameters - Absorptivity

0

0.01

0.02

0.03

0.04

0.05

0.06

300 350 400 450 500 550 600 650Wave Length, nm

Abso

rptiv

ity

345 nm

405nm428 nm


AZ 3312 Photoresist (18 cps) Development Parameters

◊

PROLITH™ Modeling ParametersOrg. Mack Adv. Mack Mack Notch

Rmax (nm/s) 125.00 127.04 125.048Rmin (nm/s) 1.95 2.33 1.95Mth -218208.00 ---- ----n 3.71 3.44 3.71Rresin (nm/s) ---- 7.00I ---- 1.39Mth notch ---- ---- 1.00n notch ---- ---- 1.10Bake conditions: Soft bake 90°C/60 sec.PEB 110°C/60 sec.AZ 300 MIF Developer 23°C


AZ 3312 Photoresist (18 cps) Suggested Process Conditions

⇒Spray/Puddle Process:– Softbake 90° -110° C, – 60 - 90 sec– Expose: g-line, h-line, i-line

stepper or broadband exposure source

– Where necessary, PEB: 110°C, 60 - 90 sec.

– Develop: AZ 300 MIF developer, 60 sec. spray- puddle

⇒Double Puddle Process:– Softbake 90° -110°C, – 60 - 90 sec– Expose: g-line, h-line, i-

line stepper or broadband exposure source

– Where necessary, PEB: 110°C, 60 - 90 sec.

– Develop: AZ 917 MIF developer, 52 sec. double puddle


DO NOT RESIZE THIS CHART OR SPREADSHEET! THE SIZE IS IMPORTANT FOR EXPORTING TO POWERPOINT.

20

30

40

50

60

70

0.75 0.8 0.85 0.9 0.95 1 1.05 1.1

Film Thickness [µm]

Dos

e-to

-Cle

ar [m

J/cm

² ]AZ 3312 Photoresist (18 cps)

i-Line Swing Curve

Dense LinesSB: 90°C, 60 sec; PEB: 110°C, 60 secPuddle: 60 sec AZ 300 MIF Developer at 23°CNIKON 0.54 NA i-Line


AZ 3312 Photoresist (18 cps)g –Line Swing Curve

Dense LinesSB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec Spray-puddle @23°CGCA 0.42 NA g-Line

50

55

60

65

70

75

80

85

90

95

100

0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 1.35 1.4

Film Thickness [µm]

Ener

gy [m

J/cm

² ]

AZ 3312 Photoresist (18 cps)

Film Thickness 0.974 µm @ Emax Exposure with NIKON 0.54 NA i-line Stepper

Using AZ 300 MIF Developer


0.250.300.350.400.450.500.550.600.650.700.750.800.850.90

0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80

Nominal Linewidth [µm]

Mea

sure

d Li

new

idth

[µm

]

90 mJ/cm²100 mJ/cm²110 mJ/cm²

AZ 3312 Photoresist (18 cps)Linearity on Silicon for Dense Lines, FT = 0.974 µm

SB: 90°C, 60 sec; PEB: 110°C, 60 secPuddle: 60 sec AZ 300 MIF Developer at 23.0°CNikon 0.54 NA i-Line



SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CNikon 0.54 NA i-Line,

0.6µm 0.4 µm0.45 µm0.5 µm

0.36 µm

0.34 µm

90 mJ/cm²




0.6µm 0.4 µm0.45 µm0.5 µm

0.36 µm

0.34 µm0.32 µm

100 mJ/cm²




0.6µm 0.4 µm0.45 µm0.5 µm

0.36 µm

0.34 µm0.32 µm

110 mJ/cm²


AZ 3312 Photoresist (18 cps)0.60 µm L/S DOF on Silicon for Dense Lines, FT = 0.974 µm


0.300.350.400.450.500.550.600.650.700.750.800.850.90

-2.20 -1.80 -1.40 -1.00 -0.60 -0.20 0.20 0.60 1.00 1.40

Focus [µm]

Mea

sure

d Li

new

idth

[µm

]

90 mJ/cm²

100 mJ/cm²

110 mJ/cm²


AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.6 µm Dense Lines, FT = 0.974 µm


-1.2µm -0.2 µm-0.6 µm-1.0 µm

0.0 µm

0.2 µm0.6 µm

90 mJ/cm²




-1.2µm -0.2 µm-0.6 µm-1.0 µm

0.0 µm

0.2 µm0.6 µm

100 mJ/cm²




-1.2µm -0.2 µm-0.6 µm-1.0 µm

0.0 µm

0.2 µm0.6 µm

110 mJ/cm²


0.45

0.5

0.55

0.6

0.65

0.7

0.75

50 60 70 80 90 100 110 120 130 140 150

Exposure Dose [mJ/cm²]

Mea

sure

d Li

new

idth

[µm

]

AZ 3312 Photoresist (18 cps)0.60 µm L/S Exposure Latitude on Silicon, FT = 0.974 µm

Dense LinesSB: 90°C, 60 sec; PEB: 110°C, 60 secPuddle: 60 sec AZ 300 MIF Developer at 23°CNikon 0.54 NA i-Line

92 mJ/cm2

40% Exposure Latitude




0.20

0.30

0.40

0.50

0.60

0.70

0.80

-2.20 -1.80 -1.40 -1.00 -0.60 -0.20 0.20 0.60 1.00 1.40

Focus [µm]

Mea

sure

d Li

new

idth

[µm

]





-1µm -0.2 µm-0.6 µm-0.8 µm

0.0 µm

0.2 µm0.6 µm

90 mJ/cm²




-1µm -0.2 µm-0.6 µm-0.8 µm

0.0 µm

0.2 µm0.6 µm

100 mJ/cm²




-1µm -0.2 µm-0.6 µm-0.8 µm

0.0 µm

0.2 µm0.6 µm

110 mJ/cm²


0.35

0.4

0.45

0.5

0.55

0.6

0.65

50 60 70 80 90 100 110 120 130 140 150


Mea

sure

d Li

new

idth

[µm

]AZ 3312 Photoresist (18 cps)

0.50 µm L/S Exposure Latitude on Silicon, FT = 0.974 µm

Dense LinesSB: 90°C, 60 sec; PEB: 110°C, 60 secPuddle: 60 sec AZ 300 MIF Developer at 23°CNikon 0.54 NA i-Line

89 mJ/cm2



AZ 3312 Photoresist (18 cps)Linearity on Silicon for Isolated Lines, FT = 0.974 µm

0.140.200.260.320.380.440.500.560.620.680.740.800.86

0.26 0.31 0.36 0.41 0.46 0.51 0.56 0.61 0.66 0.71 0.76


Mea

sure

d Li

new

idth

[µm

]






0.75µm 0.36 µm0.45 µm0.55 µm

0.34 µm

0.30 µm

90 mJ/cm²




0.75µm 0.36 µm0.45 µm0.55 µm

0.34 µm

0.30 µm

100 mJ/cm²




0.75µm 0.36 µm0.45 µm0.55 µm

0.34 µm

0.30 µm0.28 µm

110 mJ/cm²


AZ 3312 Photoresist (18 cps)0.60 µm L/S DOF on Silicon for Isolated Lines, FT = 0.974 µm


0.300.350.400.450.500.550.600.650.700.750.800.850.90

-2.20 -1.80 -1.40 -1.00 -0.60 -0.20 0.20 0.60 1.00 1.40

Focus [µm]

Mea

sure

d Li

new

idth

[µm

]



AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.6 µm Isolated Lines, FT = 0.974 µm


-1.4µm -0.6 µm-1 µm-1.2 µm

0.0 µm

0.4 µm0.6 µm

90 mJ/cm²




-1.4µm -0.6 µm-1 µm-1.2 µm

0.0 µm

0.4 µm0.6 µm

100 mJ/cm²




-1.4µm -0.6 µm-1 µm-1.2 µm

0.0 µm

0.4 µm0.6 µm

110 mJ/cm²


AZ 3312 Photoresist (18 cps)0.50 µm L/S DOF on Silicon for Isolated Lines, FT = 0.974 µm


0.20

0.25

0.30

0.35

0.40

0.45

0.50

0.55

0.60

0.65

0.70

0.75

0.80

-2.20 -1.80 -1.40 -1.00 -0.60 -0.20 0.20 0.60 1.00 1.40

Focus [µm]

Mea

sure

d Li

new

idth

[µm

]





-1.4µm -0.6 µm-1 µm-1.2 µm

0.0 µm

0.4 µm0.6 µm

90 mJ/cm²




-1.4µm -0.6 µm-1 µm-1.2 µm

0.0 µm

0.4 µm0.6 µm

100 mJ/cm²




-1.4µm -0.6 µm-1 µm-1.2 µm

0.0 µm

0.4 µm0.6 µm

110 mJ/cm²


0.20

0.30

0.40

0.50

0.60

0.70

0.80

0.90

-1.30 -0.90 -0.50 -0.10 0.30 0.70 1.10Focus [µm]

Mea

sure

d Li

newid

th [µ

m]

0.5 µm0.6 µm0.65 µm0.7 µm

SB: 90°C/ 60 sec, Nikon i-line, 0.54 NAPEB: 110°C/ 60 secAZ 300 MIF developer/ double puddle 52 sec

AZ 3312 Photoresist (18 cps)Contact Hole Focus Latitude, FT = 1.076µm

140 mJ/cm2


AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.7 µmContact Holes, FT=1.076 µm


1.25µm 0.0 µm0.5 µm1.0 µm

-0.5 µm

-1.0 µm-1.25µm

140 mJ/cm2


AZ 3312 Photoresist (18 cps)DOF on Silicon for 0.6 µm Contact Holes, FT=1.076 µm


1.25µm 0.0 µm0.5 µm1.0 µm

-0.5 µm

-1.0 µm-1.25µm

140 mJ/cm2




0.0 µm0.5 µm1.0 µm -0.5 µm

-1.0 µm

-1.25µm

140 mJ/cm2

AZ 3312 Photoresist (18 cps)

Film Thickness 1.17 µm @ Emax Exposure with GCA 0.42 NA g-line Stepper

Using AZ 300 MIF Developer


0.450.500.550.600.650.700.750.800.850.900.951.001.051.10

0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00


Mea

sure

d Li

new

idth

[µm

]

125mJ/cm²

135 mJ/cm²


SB: 90°C, 60 sec; PEB: 110°C, 60 secPuddle: 60 sec AZ 300 MIF Developer at 23°CGCA 0.42 NA, g-Line



SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CGCA 0.42 NA, g-Line

0.90µm 0.65 µm0.70 µm0.80 µm

0.60 µm

0.55 µm

125 mJ/cm²




0.90µm 0.65 µm0.70 µm0.80 µm

0.60 µm

0.55 µm0.50µm

135 mJ/cm²


AZ® 3312 Photoresist (18 cps)0.7 µm L/S DOF on Silicon for Dense Lines, FT = 1.17 µm

SB: 90°C, 60 sec; PEB: 110°C, 60 secPuddle: 60 sec AZ® 300 MIF Developer at 23°CGCA 0.42 NA, g-Line

0.50

0.55

0.60

0.65

0.70

0.75

0.80

0.85

0.90

-3.60 -3.00 -2.40 -1.80 -1.20 -0.60 0.00 0.60 1.20 1.80

Focus [µm]

Mea

sure

d Li

new

idth

[µm

]

125mJ/cm²

135 mJ/cm²




1.8µm 0.0 µm0.3 µm0.9 µm

-1.2 µm

-2.1 µm

125 mJ/cm²




0.0 µm0.3 µm0.9 µm -1.2 µm

-2.1 µm

-2.7µm

135 mJ/cm²


mJ/cm2%

0.80

0.90

1.00

1.10

1.20

1.30

180 190 200 210 220 230 240 250 260 270 280Exposure Dose [mJ/cm²]

Mea

sure

d Li

new

idth

[µm

]

0.50

0.60

0.70

0.80

0.90

95 105 115 125 135 145 155 165 17


Mea

sure

d Li

new

idth

[µm



Dense LinesSB: 90°C, 60 sec; PEB: 110°C, 60 secAZ® 300MIF, 60 sec Spray-puddle Developer @23°CGCA 0.42 NA, g-Line

121 mJ/cm2




SB: 90°C, 60 sec; PEB: 110°C, 60 secPuddle: 60 sec AZ 300 MIF Developer at 23°CGCA 0.42 NA, g-Line

0.40

0.45

0.50

0.55

0.60

0.65

0.70

0.75

0.80

0.85

0.90

-3.60 -3.00 -2.40 -1.80 -1.20 -0.60 0.00 0.60 1.20 1.80

Focus [µm]

Mea

sure

d Li

new

idth

[µm

]

125mJ/cm²

135 mJ/cm²




1.8µm 0.0 µm0.3 µm0.9 µm

-1.2 µm

-2.1 µm

125 mJ/cm²




0.0 µm0.3 µm0.9 µm -1.2 µm

-2.1 µm

-2.7µm

135 mJ/cm²


AZ 3312 Photoresist (18 cps)0.65 µm L/S Exposure Latitude on Silicon, FT = 1.171 µm

0.50

0.55

0.60

0.65

0.70

0.75

110 120 130 140 150 160 170


Mea

sure

d Li

new

idth

[µm

]

139 mJ/cm2

17 % Exposure Latitude

Dense LinesSB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF, 60 sec Spray-puddle Developer @23°CGCA 0.42 NA, g-Line


0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

-2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.0 0.4 0.8 1.2 1.6 2.0Focus [µm]

Mea

sure

d Li

new

idth

[µm

]

0.7 µm0.8 µm0.9 µm

SB: 90°C/ 60 secGCA g-line, 0.42 NAPEB: 110°C/ 60 secAZ 300 MIF Developer/ 60 s spray puddle.

AZ 3312 Photoresist (18 cps)Contact Hole Focus Latitude, FT = 1.171µm

180 mJ/cm2




1.5µm -0.5 µm0.3 µm1.1 µm

-1.3 µm

-2.1 µm-2.5µm

180mJ/cm²




1.5µm -0.5 µm0.3 µm1.1 µm

-1.3 µm

-2.1 µm

180mJ/cm²




1.5µm -0.5 µm0.3 µm1.1 µm

-1.3 µm180mJ/cm²


0.500.600.700.800.901.001.101.201.301.40

0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25


Mea

sure

d Li

new

idth

[µm

]


AZ 3312 Photoresist (18 cps)Broadband, Linearity on Silicon, FT = 1.171 µm

Dense LinesSB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 915 MIF Developer, 60 sec Spray-puddle Developer @23°CUltratech 1500 0.32 NA, Broadband



SB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 300 MIF Developer, 60 sec at 23.0°CUltratech 1500, 0.32 NA, Broadband

1.0µm 0.8 µm0.85 µm0.9 µm

0.75 µm

0.7 µm0.65µm

220 mJ/cm²




1.0µm 0.8 µm0.85 µm0.9 µm

0.75 µm

0.7 µm0.65µm

230 mJ/cm²


AZ 3312 Photoresist (18 cps)DOF for 1.0 µm Dense Lines on Silicon, FT = 1.171 µm

0.65

0.75

0.85

0.95

1.05

1.15

1.25

1.35

1.45

-2.50 -2.00 -1.50 -1.00 -0.50 0.00 0.50 1.00 1.50

Focus [µm]

Mea

sure

d Li

new

idth

[µm

]

230 mJ/cm²

240 mJ/cm²

250 mJ/cm²

Dense LinesSB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 915 MIF Developer, 60 sec Spray-puddle Developer @ 23 °CUltratech 1500 0.32 NA, Broadband




1.2µm -0.6 µm0.0 µm0.6 µm

-1.2 µm

-1.5 µm-2.0µm

220 mJ/cm²




1.2µm -0.6 µm0.0 µm0.6 µm

-1.2 µm

-1.5 µm-2.0µm

230 mJ/cm²


mJ/cm2%

0.80

0.90

1.00

1.10

1.20

1.30

180 190 200 210 220 230 240 250 260 270 280Exposure Dose [mJ/cm²]

Mea

sure

d Li

new

idth

[µm

]

0.80

0.90

1.00

1.10

1.20

180 190 200 210 220 230 240 250 260 270 280


Mea

sure

d Li

new

idth

[µm



Dense LinesSB: 90°C, 60 sec; PEB: 110°C, 60 secAZ 915 MIF, 60 sec Spray-puddle Developer @23°CUltratech 1500 0.32 NA, Broadband

221 mJ/cm2

35 % Exposure Latitude


AZ 3312 Photoresist (18 cps)Thermal Stability, 120 sec Hard Bake

FT = 1.187µmSB: 90°C, 60 sec; PEB: 110°C, 60 secSpray Puddle: 60 sec AZ 300 MIF Developer at 23.0°CNikon 0.54 NA i-Line

No bake 125°C

130°C

120°C115°c

Documents

AZ 3312 Photoresist - University of Arizona · AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD,