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Astronomical Telescopes and Instrumentation (SPIE) 8/28/02
1Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)
Wide band, ultra low noisecryogenic InP IF amplifiers
for the HERSCHEL mission radiometers
Isaac López-Fernández, Juan Daniel Gallego, Carmen Diez, Alberto Barcia, Jesús Martín-Pintado
Centro Astronómico de YebesObservatorio Astronómico Nacional
Guadalajara, SPAIN
Astronomical Telescopes and Instrumentation (SPIE) 8/28/02
2Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)
Outline
Introduction Device characterization Amplifier design Amplifier fabrication Amplifier performance
Noise and gain measurements Reflection and stability measurements Gain fluctuations measurements Isolator measurements
Conclusions
Astronomical Telescopes and Instrumentation (SPIE) 8/28/02
3Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)
Introduction: HERSCHEL requirements
HERSCHEL: Far Infrared and Submillimeter 3.5 m Telescope orbiting in L2 with 3 cryogenic instruments
HIFI: Heterodyne Instrument for the Far Infrared with 7 dual polarization submillimeter SIS and HEB receivers
Our contribution: low noise, wide band 4-8 GHz cryogenic IF preamplifiers for each mixer channel (14)
Sensitive parameters: Noise temperature: the contribution to the receiver noise is
significant Power dissipation: mission life limited by liquid helium mass Gain fluctuations: impact in the chopping frequency Other mechanical and electrical constraints
Astronomical Telescopes and Instrumentation (SPIE) 8/28/02
4Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)
Introduction: CAY experience
More than 150 cryogenic LNAs built for different applications(not including to HERSCHEL developments) IRAM: Grenoble, PdB interferometer, 30m (IF amplifiers) ESOC: New Northia DSN antenna (Rosetta, SMART) Burdeos Observatory EMCOR (Atmospheric sensing) PRONAOS (mm receiver in stratospheric balloon) INPE: 14m Brazil CAY: VLBI receivers (X and K band)
Wide experience with HEMT devices More than 30 batches of commercial GaAs transistors tested Several models of InP transistors measured
JPL-TRW (CHOP program): 14 batches, 9 models ETH Zürich: 7 batches, 4 models Chalmers University: 1 batch
Astronomical Telescopes and Instrumentation (SPIE) 8/28/02
5Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)
Introduction: Initial developments
Prototypes in the 8 – 12 GHz band Successful testing of InP in this band and comparison with
GaAs results Demonstration of InP in the 4 – 8 GHz band
6 8 10 12 140
5
10
15
20
25
30
YXF 001 Prototype AmplifierT=14 K, not optimized
InP TRW 160 m GaAs Fujitsu FHX13X
Gai
n [d
B]
Freq. [GHz]
0
10
20
30
40
50
60
Tn
[K]
Astronomical Telescopes and Instrumentation (SPIE) 8/28/02
6Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)
Device characterization: TransistorsMeasurement procedures
InP technology selected based on previous experience in IF amplifiers lower power dissipation, factor of 2 better noise, higher gm
Cryogenic S parameter measurements to model devices In-house test fixture with microstrip lines to allow two-tier TRL calibration Device measured with bonding wires DC and coldFET complete the small signal model
Noise model according to Pospieszalski The noise measured in a wide band test amplifier sets the TD of the model
Astronomical Telescopes and Instrumentation (SPIE) 8/28/02
7Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)
EXAMPLE OFCRYOGENIC
S PARAMETERS(1 – 40 GHz)
MODEL Circuit modelMEAS Raw dataMEASG Time domain
filter
Astronomical Telescopes and Instrumentation (SPIE) 8/28/02
8Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)
Device characterization: TransistorsResults
3 4 5 6 7 8 90
5
10
15
20
25
30
YCF 2 InP devices comparisonOptimum noise bias
ETH T-35 TRW T-45 TRW T-42
Ga
in (
dB
)
Freq. (GHz)
0.0
2.5
5.0
7.5
10.0
12.5
15.0
Tn
(K
)
ETH T-35 TRW T-45 TRW T-42
TRW T-42 CRYO3 200×0.1 μm gate Best performance
TRW T-45 CRYO4 200×0.1 μm gate Used in DMs Space qualifiable, to be used in FMs CHOP developed
ETH T-35 200×0.2 μm gate Experimental transistor Design by request Used in MPAs
0.22 mm
0.19
mm
Astronomical Telescopes and Instrumentation (SPIE) 8/28/02
9Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)
Device characterization: Components
Selection of components based on previous experience at cryogenic temperatures SOTA thick film resistors ATC 111 parallel plate capacitors with CA dielectric ATC 100 multilayer porcelain capacitors RT/Duroid 6002 substrates 20 mils thick
Simple models of concentrated elements are adequate for this frequency range
Astronomical Telescopes and Instrumentation (SPIE) 8/28/02
10
Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)
Amplifier design
Microstrip hybrid design simulated by MMICAD software Developed cryogenic models for transistors, connectors, critical
capacitors, resistors and bonding wires Each InP device is independently stabilized by resistive loading and
inductive feedback Input circuit: wideband noise matching Tuning elements incorporated in the design
(adjustable bonding wires, microstrip islands) Box resonances avoided with careful EM design and the use of
microwave absorbers Multiple bias networks requirements
Contribute to the unconditional stability of the amplifier Comply with EMC mission requirements Provide ESD protection of sensitive InP HEMTs Have a low drain voltage drop Filter RF
Astronomical Telescopes and Instrumentation (SPIE) 8/28/02
11
Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)
Amplifier fabrication: several series
37 4-8 GHz YCF amplifiers fabricated at CAY in different series All processes performed in our labs Design transferred to Alcatel Espacio to build Flight Models Series analyzed here:
YCF 2 – ETH transistors (Mixer Program Amplifiers) YCF 6 – TRW transistors (Development Models)
SERIES QUANTITY DESTINATION SER. NUMBERS
0 - 1 4 Demonstration prototypes for the evaluation of technology, devices and performance 002, 3, 4, 1001
1 Yebes 2001 1 Platform for transistor characterization (Yebes) 2010 8 Herschel MP (SRON, JPL, KOSMA, DEMIRM, Chalmers) 2002-2009 4 IRAM ALMA Development 2013, 16, 17, 18 1 SRON ALMA Development 2015 4 Harvard-Smithsonian CfA (SMA) 2011, 12, 19, 20
2
1 Cambridge Cavendish Laboratory (JCMT) 2014
5 1 Cornell University (Arecibo) 5001 1 Yebes 6001
5 Herschel DMs 6004, 5, 6, 9, 14 4 Herschel MP (SRON, JPL, KOSMA) 6007, 10, 11, 12
6
2 Harvard-Smithsonian CfA (SMA) 6008, 13
Astronomical Telescopes and Instrumentation (SPIE) 8/28/02
12
Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)
MP amplifier YCF 2
2 stages ETH 200 µm
Gold plated brass
61.4×35×11.5 mm, 149 g
Duroid 6002 substrates
DM amplifier YCF 6
2 stages TRW 200 µm
Gold plated aluminum
58×32×15 mm, 65 g
Duroid 6002 substrates
Improved bias circuits
Additional cavity for filtering
Astronomical Telescopes and Instrumentation (SPIE) 8/28/02
13
Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)
Amplifier fabrication: reliability
Reliability is a priority over performance for the selection of components, substrates and mounting techniques
Spatial design Cryogenic operation
Past experience in cryogenic designs obviates most of the work in testing, modeling and pre-qualifying components
An example: ‘O’ ribbon connection in the SMA tab contact: Allows mobility in three axis Excellent electrical properties
compared with traditional SMA connections
Astronomical Telescopes and Instrumentation (SPIE) 8/28/02
14
Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)
Performance: Noise and GainMeasurement procedures
Measurement procedure:Cold attenuator
Two measurement systems available at our labs: System 350:
Older More pessimistic Used to keep traceability with
past measurements All noise tests shown here
were performed with 350. System 1020:
Newer calibration. Gives 0.75 K better results
Estimated error (both) 1.4 K(repetitivity < 0.2 K)
3 4 5 6 7 8 90
5
10
15
20
25
30
YCF 6001 (T=14 K)
System 1020 System 350
Gai
n (
dB)
Freq. (GHz)
0
2
4
6
8
10
12
Tn
(K)
15 K
65 K
297 K
PREAMPLIFIER
DEWAR
HPIBRS-232
NARDA DC-BLOCK
NARDA ATTEN. (15 dB)
HEMT AMPLIFIER
TEMP. SENSOR
LAKE SHORE CRYOGENIC
THERMOMETERCOMPUTER
NOISE FIGURE METER
TEST SET
SYNTHESIZER OSCILATOR
NOISE DIODE HP 346 C
Astronomical Telescopes and Instrumentation (SPIE) 8/28/02
15
Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)
Performance: Noise and GainResults
3 4 5 6 7 8 90
5
10
15
20
25
30
Gai
n [d
B]
Freq. [GHz]
0
2
4
6
8
10
12
HERSCHEL IF1 YCF 2 MPsGlobal optimum bias T=14 K
Tn
[K]
3 4 5 6 7 8 90
2
4
6
8
10
12
Tn
[K]
Freq. [GHz]
0
5
10
15
20
25
30
HERSCHEL IF1 YCF 6 DMsP
D=4 mW, T=14 K
Gai
n [d
B]
NOISE TEMPERATURE [K] (MEAN)
GAIN [dB] (MEAN)
GAIN FLATNESS [dB] (PEAK TO PEAK) AMPLIFIER
GROUP Best amp. Average Worst Best amp. Average Worst Best amp. Average Worst
YCF 2 MPAs 4.89 5.18 5.38 25.29 24.80 24.06 2.35 2.85 3.19 YCF 6 DMs 3.46 3.57 3.72 27.70 27.11 26.26 1.96 2.19 2.46
Average of 3.57 K mean noise in the band for the complete DM series
Astronomical Telescopes and Instrumentation (SPIE) 8/28/02
16
Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)
Performance: Reflection and Stability
Worst case output reflection Average MPAs: -14.3 dB Average DMs: -13.0 dB
Model prediction of output return losses needs refinement
Isolator at the input(not designed for low input ref.)
Unconditionally stability for most bias points checked with sliding shorts
2 3 4 5 6 7 8 9 10-30
-25
-20
-15
-10
-5
0
Freq. [GHz]
S1
1,
S2
2
[dB
]
HERSCHEL IF1 YCF 2 MPsGlobal optimum bias, T=14 K
2 3 4 5 6 7 8 9 10-30
-25
-20
-15
-10
-5
0
Freq. [GHz]
S1
1,
S2
2
[dB
]
HERSCHEL IF1 YCF 6 DMsP
D=4 mW, T=14 K
Astronomical Telescopes and Instrumentation (SPIE) 8/28/02
17
Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)
Performance: Gain fluctuationsCryogenic measurements of DMs (TRW transistors)
Characterized by spectral density of normalized gain fluctuations:1. Measure S21 @ 6 GHz with HP8510 VNA (attenuator and air lines)
2. Normalize and FFT each VNA scan (0.012-2.34 Hz)
3. Average 50 spectra and subtract the system fluctuations Fit, in the region where 1/f noise dominates, the expression
AMPLIFIER YCF
GAIN FLUCT. @ 1HZ ( )
SPECTRAL INDEX (α)
6004 8.62E-05 0.754 6005 8.88E-05 0.706 6006 1.29E-04 0.562 6009 1.00E-04 0.726 6014 1.02E-04 0.762
Average 9.40E-05 0.737
21
)(
fHz
fS β represents the fluctuatons @ 1 Hz and is used as a reference for comparison between amplifiers
Astronomical Telescopes and Instrumentation (SPIE) 8/28/02
18
Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)
Performance: Gain fluctuationsCorrelation with voltage fluctuations
Fluctuations of gate voltage measured with HP35670A
Moderate correlation with gain fluctuations for different amplifiers measured at the same bias point
This simple DC measurements may be useful for pre-selecting least fluctuating devices from a batch
8.0x10-5 1.0x10-4 1.2x10-4 1.4x10-44.0x10-5
5.0x10-5
6.0x10-5
7.0x10-5
8.0x10-5
9.0x10-5
YCF 6 amplifiers fluctuations (both stages)8 GHz, 14 K Vd1=0.85 V Vd2=0.5 V Id1,2=3 mA
VG @
1 H
z [V
/Hz1
/2]
G/G @1 Hz [1/Hz1/2]
10-2 10-1 100 10110-5
10-4
10-3
10-2
YCF 6001 Gain fluctuations Spectrum8 GHz, 14 K Vd1=0.85 V Vd2=0.5 V Id1,2=3 mA
G/G
[H
z-1
/2]
Freq. [Hz]
measured fitted correction
1st stage
2nd
stage
100
101
102
10n
100n
1µ
10µ
100µ
1m
10m
YCF 6001 VG fluctuations Spectrum
8 GHz, 14 K, Vd1=0.85 V, Vd2=0.5 V, Id1,2=3 mA
VG [V
/Hz
1/2]
Freq. [Hz]
1 Hz
1 Hz
Astronomical Telescopes and Instrumentation (SPIE) 8/28/02
19
Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)
Performance: Gain fluctuationsBias dependence
Tested the variation of gain and voltage fluctuations with drain voltage Found a steep change in gain voltage around 0.5 V The behaviour of gain and voltage fluctuations is similar as Vd varies
High fluctuation zones could be avoided with no penalty in noise or gain Voltage fluctuations may help detecting these bias regions
0.0 5.0x10-5 1.0x10-4 1.5x10-40.0
1.0x10-5
2.0x10-5
3.0x10-5
4.0x10-5
5.0x10-5
YCF 6001 1st stage fluctuations8 GHz, 14 K Vd=0.3..0.7 V Id=3 mA (device)
VG
1 @
10 H
z [V
/Hz
1/2]
G/G @1 Hz [1/Hz1/2]
0.2 0.3 0.4 0.5 0.6 0.7 0.80.00
2.50x10-5
5.00x10-5
7.50x10-5
1.00x10-4
1.25x10-4
1.50x10-4
Gain fluctuations noise floor
YCF 6001 1st stage fluctuations8 GHz, 14 K Id=3 mA
VD1
(device) [V]
G/G
@1
Hz
[1/H
z1/
2]
0.0
1.0x10-5
2.0x10-5
3.0x10-5
4.0x10-5
5.0x10-5
6.0x10-5
VG @
10 H
z [V
/Hz
1/2]
Astronomical Telescopes and Instrumentation (SPIE) 8/28/02
20
Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)
Performance: IsolatorsImpact in overall performance
Isolators measured @ 14 K (PAMTECH gives data @ 77 K)
Good agreement between measurement and estimation of isolator noise:
Mean contribution 1.1 – 1.4 K
ampambiso
c TTG
T
1
1
3 4 5 6 7 8 90
5
10
15
20
25
30
YCF 6005 (T=14 K)
Tn
(K)
Freq (GHz)
No Isolator Isolator K10 SN 101
0
5
10
15
20
25
30
G(d
B)
Astronomical Telescopes and Instrumentation (SPIE) 8/28/02
21
Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)
Performance: IsolatorsResults
MEASUREMENTS @ 14 K [dB] ISOLATOR MODEL
DATA TYPE S11 < S22 < S12 < S21 >
Gav mean [dB]
ΔTc mean [K]
Best of 9 -19.6 -19.0 -19.6 -0.27 -0.17 0.81
Average -18.8 -18.1 -17.4 -0.36 -0.20 1.12 CTH1365 K4
Worst of 9 -18.2 -17.3 -16.0 -0.46 -0.30 1.48 Best of 5 -18.0 -17.9 -20.7 -0.50 -0.26 1.25
Average -16.2 -15.4 -18.3 -0.58 -0.28 1.38 CTH1365 K10
Worst of 9 -15.0 -14.0 -16.5 -0.66 -0.30 1.47
0 2 4 6 8 10 12-50
-40
-30
-20
-10
0
-5
-4
-3
-2
-1
0
Iso
latio
n [
dB]
Freq. [GHz]
PAMTECH CTH 1365 K10 ISOLATORS (T=15 K)
S12 S21
Lo
sse
s [d
B]
0 2 4 6 8 10 12-50
-40
-30
-20
-10
0PAMTECH CTH 1365 K10 ISOLATORS (T=15 K)
S22 S11
Ref
lect
ion
coef
f. [d
B]
Freq. [GHz]
Astronomical Telescopes and Instrumentation (SPIE) 8/28/02
22
Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)
Summary
34 InP HEMT 4-8 GHz cryogenic amplifiers fabricated for HERSCHEL, including the Development Models with TRW transistors
Cryogenic S parameters of InP transistors measured in microstrip and noise models developed
Cryogenic isolators used at the input allow wide-band mixer-independent design with small penalty in noise
Exceptional performance and repeatabilityFor the final DMs 3.5 K noise and 27±1.1 dB gain dissipating 4 mW
Gain fluctuations exhibit a greater dispersion Low frequency noise of gate bias may help selecting more stable devices
High sensitivity of gain fluctuations to bias point Gate bias noise measurements could detect bias regions of high fluctuations