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XeTepOnpeXO)];HH 6HnOJIHpHH TpaH3HCTOpH C SiGe 6a3a.
qacT I: TIpe)];HMCTBa,TeXHOJIOrHqeHnpou;ec,
6a30Ba 06JIaCT Ha TpaH3HcTopHTe
reHO tI:HMHTPOB,MOXaMeJl: A. A6J1:YJIa
B Cmal1lU5ll1W ce pa3Z11e:JlCoamnpeou"vtcm6ama Ha SiGe HBT 6 CpaGHeHUe C Si 6UnOIl51pHU XOMon-
peXOOHUmpaH3UCmOpU u GaAs HBT, meXHOllOZUlfllU5lmnpOl{eC Ha U3Z0m65lHe Ha m03U mun mpaH3UC-
Jll0pU U 6oGeOeHUme HOGUmeX1l0110ZUlfHUOnepmjUU - HUCKOlneMnepamypHO XUMUlfllO omllazaHe om
Za30Ga qJa3a GCGpoX6UCOKGaKYYMUJlUnOHUJlCeHOllall5lZaHe, llezupaHe Ha 6a3ama U eMumepa om nOllU-
CUllUtjuii, 6o6eJICOalle Ha KOHmpollupaHa KOmjeHmpmjU51ZepMaHuii GHanpeZHam SiGe 6a30G clloii U m.H.
Oc06eHO GHU"vtaHue e 06oPllamo JiG 065lCHeHUe Ha U3MeHe7IUemO Ha H5lKOUDC U AC napaMempunpu ynompe6a Ha nOllUCW1UljueGeMumep U HanpezHam SiGe clloii, Koemo 600U CoOllwemHO 00 nOGUtue-
Ha erjJeKUGHOCmHa eMUlnepa U H(]JVlCUleHOGpeMe Ha npellumaHe npe3 6a3ama.
jJ,aoeHo e 065lCHeHUeHaYGellUlfeHama nOOGu:JICHOCJllHap-mOKOllocumellume 6 aKmUGHama 6a3a,
C Koemo ce n06UUlaGa npOGooU"vtocmma Ha aKmUGllalna 6a3a. Pa3Z11eoaHUca pa311UlfHUcmpYKmypu Ha
6a306ama 0611acm Ha mpaH3ucmopa om ZlleOHa mOlfKa JiGKOmjeHlllpmjUOHHU51nporj)UJl Ha zepMaHU51.
The aim of this review is to introduce High-Speed Heterojunctiol1 Bipolar Transistors with SiGe
Base (SiGe HBTs). The advantages ofSiGe HBTs over Silicon bipolar junction transistor (Si-BJT) and
GaAs field effect transistor (FET), from the point of view of ultra-high frequency (UHF) applications
and basic construction features are as follows:
Cut-offfi'equency (fT), Current gain (hFFJ, highjrequency noise (f of properly ofGHz); very low
coast, and absence of offset of uCE, lower value of NF and possibility to prepare PNP and PMOStransistors.
Concerning the change of N Ge in the base layer three types of basis transistor structures aredescribed.
E'bp30,D,eHCTBYBaIll,I1Te 6I1nOn5IpHI1 xeTepOnpeXO,D,HI1
TpaH3I1CTOpI1c SiGe 6a3a (SiGe HBT) HaMepI1Xa IlII1-
pOKO npl1J1o)j{eHw~ npe3 nOCJJe,D,HI1Te 10 rO,D,I1HI1B CBp'bX
BI1COKI1qeCTOTI1 (CBQ) aHanOlOBI1Te I1HTerpanHI1 cxe-
MI1(HC) (1,2,9,10,16), HeHaCI1TeHlne n0lI1QeCKI1 HC(Hanp. ECL) (6 +.8, 15) 11BiCMOS HC (3,4,33). Kna-CI1QeCKI1TennaHapHO-enI1TaKCI1allHI1 TpaH3I1CTOpI1 C 113-
KJ1l0QeHI1e Ha Te3I1 C nonI1CI1nI1IJ,I1eB (TIC) eMI1Tep,D,OCTI1rHaXa npe,D,eJIa Ha QeCTOTHI1Te CI1 B'b3MO)j{HOCTI1
B Cpe,D,aTa Ha 80-Te lO,D,I1HI1B'bnpeKI1 npOBe,D,eHOTO ,D,pa-
CTI1QHO MaIll,a6I1paHe B XOpI130HTanHa 11 BepTI1KanHa
nOCOKa 113aM5IHaTa Ha ,D,I1<PY3I10HHI1TenpOIJ,ecI1 C HOH-
HO nerI1paHe (HJI). B Cpe,D,aTaeKpa5I Ha 80- Te rO,D,I1HI1
npI1 Si TpaH3I1CTOpI1 6ellIe B'b3npeTa TeXHOn0lI15ITa Ha
TpaH3I1CTOpI1Te Ha 6a3aTa Ha AIllBv C'be,D,I1HeHI15I- T5IC-
Ha (no,D, 0,5 /lll1, a BnOCJIe,D,CTBI1eno,D, 0,1 /lll1) aKTI1BHa
enI1TaKCI1anHa (enI1) 6a3a; IlII1pOKO npI1JImKeHI1e HaMe-
pI1xa HI1CKOTeMnepaTypHHTe en~-npOIJ,eCH B CBp'bXBI1-
COK BaKYYM - UHV /CVD, JIerHpaHeTo no BpeMe Ha
34
enI1TaKCI1anHH5InpoIJ,ec (in situ doping), TeXHOJIOrWf-
HHTe npOIJ,eCH C e,D,HHHQeHH ,D,BOeHnOnHCHJIHIJ,HH H T.H.
TIpe3 1987 r. 6ellIe ,D,OKJIa,D,BaHO3a H3lOTB5IHeTO Ha
n'bpBHTe xeTepOnpeXO,D,HH 6HnOJI5IpHI1 TpaH3HcTopH CSiGe 6a3a.SiGe cnnaB e C nO-ManKa 1lI11pOQl1Ha Ha 3a6-
paHeHaTa 30Ha H HMa KaTO pe3ynTaT nO-,D,06pH nOCTO-
5IHHOTOKOBl1(DC) H ,D,HHaMW!Hl1 (AC) napaMeTpl1 Ha
TpaH3HcTopHTe 116'bp30,D,eHCTBl1e, cpaBHHMo C TOBa Ha
AIllBv TpaH311CTOpllTe.
SiGe HBT HMaT CJIe,D,Hl1Tenpe,D,HMCTBa npe,D, Si xo-
MOnpeXO,D,HH 6HnOn5IpHH TpaH3HCTOpl1 (5):
1) BHCOKO'bpnH-Hanpe)l(eHHeUA nOpa,D,H nO-Cl1JI-
HOTO JIerHpaHe Ha 6a3aTa;
2) HHCKO C'bnpOTHBJIeHHe fbb' Ha aKTHBHaTa 6a3a;
3) TIo-BI1COKa nO,D,Bl1)j{HOCTHa eJIeKTpOHHTe, KO5ITO
BO,D,H,D,OHaMan5IBaHe Ha BpeMemrra Ha npeJIHTaHe npe3
aKTI1BHHTe 06JIaCTl1 Ha TpaH3HCTOpa (22,28);
4) TIO-Mall'bK KanaIJ,l1TeT Ha eMHTepHl15I npexo,D, CTc no-
pa.n.H nO-CJIa6OTO JIempaHe Ha nOJIl1Cl1JIMIJ,l1eBl15IeMl1Tep;
"E+E", 5-6/2004 r.
5) C'bBMeCTHMocT Ha SiGe TeXHOJTOrlli! C Ta3H Ha
CHJTHIJ;y!eBHTenpH60pH.
ITpe)J;HMCTBaHa SiGe HBT
SiGe TeXHOJTOrH51eBOJTIOHpa MHoro 6'bp30: B nepHo-
)],a 1987 +- 1996r. T5I npeMHHa aT JTa60paTOpeH CTa)J;HH
K'bM npOMHIIIJTeHO npOH3BO)J;CTBO. I1y6JTHKaIJ;HHTe aT
1995 +- 2001r. nOKa3aXa, 'Ie T5I MO)Ke)],a npe)],JTO)KH eB-
THHH CBq H CBp'bX CBq HC 3a TeJTeKOMYHHKaIJ;HOHHH
npHJTO)KeHH5I.
HanpaBeHoTo B (5) cpaBHeHHe Ha napaMeTpHTe Ha
CHJTHIJ;HeBHTexOMonpexo)],HH TpaH3HcTopH (Si BJT), fTH GaAs HBT nOKa3a CJTe)],HOTO:
-TpaH3HTHaTa 'IeCTOTa fTHa SiGe HBT e 1,5 +- 1,7n'bTH nO-BHCOKaaT Ta3H Ha XOMonpeXO)],HHTeSi TpaH-
3HCTOpHH caMO C 5 +- 10 % nO-HHCKa aT fT Ha GaAsHBT;
- np06HBHOTOHanpe)KeHHe BUCEOHa SiGe HBT C
IIIHpOqfiHa HaaKTHBHaTa 6a3a WB = 0,1 /lill e 5 +-5,5v, C'bOT-
BeTHO npH WB = 0,025/lill (250 A) BUCEO= 2,5 +- 3,Ov.GaAs HBT HMa OKOJTO2 n'bTH nO-BHCOKH CTOHHOCTH
Ha U(BR)CEO;- OCHOBHO npeHMyru:ecTBo Ha Si 6HnOJT5IpHH TpaH-
3HCTOpH e B'b3MmI<HOCTTa )],a ce H3roTB5IT P-KaHaJTHH
MOS (PMOS) H PNP TpaH3HcTopH- npH GaAs HBTTOBa e HeB'b3Mm!<H0 (5);
- TepMH'IHaTa npoBo)],HMOCT Ha Si TpaH3HcTOpH e
TPH n'bTH nO-BHCOKa aT Ta3H Ha GaAs HBT;
- lIf-IllYM'bT NF npH 'IeCTOTH 1 +- 2 GHz Ha SiGe
TpaH3HcTopH e C 20% nO-HHC'bK.
OCHOBHOTO npe)],HMcTBO Ha GaAs HBT e Bce oru:e
nO-BHCOKaTa TpaH3HTHa 4eCTOTa fT H MaKCHMaJTHaTa
'IeCTOTa f - TOBa 03Ha4aBa nO-BHCOKO YCHJTBaHe Harnax
YCHJTBaTeJTHOTOCThnaJTO npH CBq npHJTmKeHH5I.
I10-)],06pHTe eJTeKTpH4ecKH napaMeTpH, BKJT.YCHJT-
BaHeTO no TOK hFE Ha "HanperHaTHTe" SiGe CJTOeBe B
cpaBHeHHe C HeHanperHaTHTe TaKHBa )],OBe)],oxa )],0
IIIHpoKoMaru:a6Ho npoH3BO)],CTBO Ha SiGe HBT H SiGe
MOSFET. I1pH MOS TpaH3HcTopHTe ce 0'IepTaBa, KaK-
TO 6eIlle nOC0'IeHO no-rope, HapaCTBar.u; HHTepec K'bM
P-KaHaJTHHTe TpaH3HCTOpH nopa)],H 'IeCTOTHHTe HM npe-
)],HMCTBaB cpaBHeHHe C Si xOMonpexo)],HH PMOS TpaH-
3HCTOpH, 'IHHTO )],HHaMJIlIHH napaMeTpH orpaHH'IaBaxa'IeCTOTHH5I )],Hana30H Ha CMOS HC.
C'bmacYBaHeTo no BXO)],H H3XO)],H Me)K)],YYCHJTBa-
TenHHTe CThnaJTa Ha CBq HC nOCTaBH Ha )],HeBeH pe)],
HHTerpHpaHeTO Ha SiGe HBT B MOHonHTHH HC.
Dp~ 3an0'IBaHe Ha npoMHilineHo npOH3Bo)],CTBO Ha
SiGe HBT Tp5I6BaIlle)],a ce peillaT cne)],HHTe np06neMH:
1) OTnaraHe Ha Ka4eCTBeHH SiGe enH-CJTOeBe B'bpXY
CHnHIJ;HeBHTe nO)],JJO)KKH.DpH TpaH3HcTopHTe B MOHO-
JTHTHOHHTerpanHo H3n'bnHeHHe, OTJJaraHeTO Ha SiGe-
"E+E", 5-6/2004 r.
"'f!!:......
-~- ~..-"",,;.. ,~, _'N~'W~
6a30B cnoH ce npaBH B'bpXYSi nJTaCTHHaC KapTHHa Ha
n+-CKpHTH5IKoneKTopeH CJTOH.OCHoBeH np06neM 3a
pa3peillaBaHe e nonY'IaBaHeTo Ha HanperHaT;c KOHTpO-
nHpaHa CTeneH Ha )],ecPopMaIJ;H5ISiGe CJJOH.Dopa)],Hpa3nHKaTa Me)K)],YpeilleTh'IHHTe KOHCTaHTH Ha Si H GeB'b3HHKBaT )],HcnOKaIJ;HH Ha HeC'bOTBeTCTBHe.
OTnaraHeTo Ha BHCOKOKa4eCTBeH HanperHaT cnOH e
npe)],MeT Ha pe)],HIJ;a H3cne)],BaHH5I (19,20). CnO5IT MO)Ke
)],a ce CM5ITa 3a cTa6HJJeH npH )],ecPopMaIJ;H5I nO-MaJTKa
aT He06xo)],HMaTa 3a npHnn'b3BaHe Ha )],HcnOKaIJ;HHTe;
aKO MexaHH4HaTa )],ecPopMaIJ;H5I e )],OCTaTh'IHa 3a 06pa-
3YBaHe Ha )],HCJJOKaIJ;HHnpH HaJTH'IHe Ha npe)],BapHTen-
HO C'bru:ec-TBYBar.u; )],ecPeKT, enHTaKCHanHH5IT CJJOH eMeTaCTa6HJJeH.
2) CTpor KOHTpOJJ Ha TepMH'IHH5I npoIJ;ec cne)], HHC-
KO- HnH cpe)],HoTeMneparypHoTo enH-OTnaraHe C IJ;en
CBe)K)],aHe )],0 MHHHMYM Ha npepa3npe)],eneHHeTo Ha
nerHpar.u;H5I npHMec B aKTHBHaTa (T.Hap. "B'bTpeulHa")
6a3a;
3) HaMaJT5IBaHe Ha napa3HTHHTe KanaIJ;HTeTH;
4) YCBO5IBaHe Ha HOBH TeXHonorH'IHH npOIJ;ecH: MO-
neKYJT5IpHO-JT'b'IeBa enHTaKCH5I MBE, XHMH4HO OTJJara-
He aT ra30Ba cPa3a B CBp'bXBHCOK BaKYYM, peaKTHBHO
HOHHO eIJ;BaHe, 6'bp3 TepMH'IeH OTrpeB RTA, 6'bp30 JJe-
rHpaHe aT ra30Ba cPa3a RVD, nerHpaHe "Ha M5ICTO" Ha
nonHCHnHIJ;HeBH5I eMHTep, CaMOC'bBMeCTeHa 6HnOn5Ip-
Ha TeXHOJJOrH5I SABT C )],BoeH nOnHCHJJHIJ;HH, H3OJTa-
IJ;H5I C TeCHH KaHaBKH TIT, TeXHOnOrH5I Ha cPopMHpaHe
Ha nJJHTKH PN npexo)],H SJFT H T.H.
I1oHe)Ke SiGe HBT C nonHCHnHIJ;HeB eMHTep HMa
BHCOKa ecPeKTHBHoCT Ha eMHTepa, TOBa n03BOn5IBa )],a
ce HaMaJTH KOHIJ;eHTpaIJ;H5ITa Ha repMaHH5I NGe B 6a3aTa
Ha TpaH3HcTopa, KoeTO aT CBO5I CTpaHa nOHH)KaBa
nn'bTHOCTTa Ha )],HcnOKaIJ;HHTe Ha HeC'bOTBeTCTBHe H
OTTaM ce npeMHHaBa K'bM no-cTa6HJJeH enHTaKCHaJTeH
cnOH. DOHH)KaBaHeTO Ha NGe HMa or.u;e e)],HO npe)],HM-CTBO: HaMaJT5IBa BepO5ITHOCTTa OT B'b3HHKBaHeTO Ha Ka-
HanH - T. Hap. "pile-up" - ecPeKT, )],'bJJ)Karu:ce Ha
npepa3npe)],eneHHeTO Ha repMaHH5I npH OKHcneHHe B
HapaCTBar.u;H5I OKHC H OTTaM "OKHCHO YCKopeHa )],HcPY-
3H5I" OED. 3a H365IrBaHeTOH ce H3nomYBa KOM6HHa-IJ;H5IaT OKHCJJeHHe npH BHCOKOHaJT5IraHe H to = 600 +-ox
700°C, a Ha HHTepcPei1ca SiO/Si ce OTJJara OKHCHa
B'b3maBHHIJ;a,nOKpHTa C Si3N4.
ITO)J;BH)KHOCTHaP-TOKOHOCHTeJIHTeB HanperHaTSiGe CJIoii::
I1pH npOeKTHpaHe Ha SiGe TpaH3HcTopH (TpaH3Hc-TOpH C SiGe 6a3a), )],e6eJTHHaTaHa SiGe cnoi1 e Ba)KeH
KOHCTpYKTHBeHnapaMeThp. MaKcHMaJTHaTa(T.Hap. KPH-TH'IHa) )],e6enHHa cnope)], (21) e )],e6enHHaTa Ha cn05l,
no)], KO5ITOe eHepreTH4ecKH npe)],no4HTaTenHo 4aCT aT
35
I
eHepnl5lTa )J,a ce TpaHCcpOpMHpa no)J, cpOpMaTa Ha )J,HC-
JIOKaUHH Ha HeC'bOTBeTCTBHe Ha XeTepOemnaKCHaJIHH5I
HHTepcpeHC.
TIpH MaJIKH KOHueHTpaUHH N AHa JIempallJ,H5I aKuen-
TopeH npHMec B 6a3aTa, nO)J,BH)l<HOCTTa mp Ha TOKOHO-
CHTeJIHTe HaMaJI5IBa C HapaCTBaHe Ha NGe nopa)J,H
pa3ceHBaHe OT CnJIaBTa SiGe, KoeTO )J,oMHHHpa Ha)J,
pa3CeHBaHeTo OT aTOMHTe Ha )J,onaHTa. TIpH nO-CHJIHO
JIerHpaHe Ha 6a3aTa, OTHOCHTeJIHaTa qaCT Ha pa3ceHBa-
HeTO OT CnJIaBTa Cnp5lMO 06llJ,OTO pa3CeHBaHe HaMaJI5I-
Ba. 3ae)J,Ho C HH)J,YUHpaHOTO OT HanperHaTH5I CJIOH
HaMaJIeHHe Ha ecpeKT11BHaTa MaCa Ha TOKOHOCHTeJI11Te
B CHJI11U115ImeITSi npH HapaCTBaHe Ha KOHueHTpaU115ITa
Ha Ge B en11-CJIO5l, TOBa BO)J,11)J,O HapaCTBaHe Ha IIp B
HanperHaT115I SiGe CJIOH (28).TIp11 CTaHHa TeMnepary-
pa ecpeKT11BHaTa nO)J,BH)l<HOCTHa )J,ynK11Te ilLs B Hanper-
HaT SiGe CJIOH e C 50% nO-BHCOKa OT IIp B Si.
Ha cpHr.1 e nOKa3aHa 3aB11CHMOCTTa IIp = f(% Ge)npHNA = 1017cm-3.
VJ;>--
ro ":-':I: C0rof- 0.f- :::t0 :=0 ~t? <!)~ f-:= :=~ 0t::( 00 :r:
~ ~0f-
$)Ot
300
rr -3
10 Cm ;:
~500
400
200
BIDK,lJ,a ce, qe IIp B paBH11HaTa Ha paCTe)l{ e nO-BHCO-
Ka OT nO)J,BH)l{HOCTTa Ha p-TOKoHOC11TeJI11Te B nOCOKa
nepneH)J,11KYJI5IpHa Ha paBHHHaTa Ha HapaCTBaHe, KaTO
H )J,BeTe nO)J,B11)l{HOCTHca nO-B11COKH OTTa3H Ha HeHan-
perHaTH5I SiGe CJIOH IlULS' I1opa)J,11 Hanpe)l{eHHeTO Ha
CBHBaHe GCBB paBHHHaTa Ha paCTe)l{ Ha SiGe CJIOH, Ba-
JIeHTHaTa 30Ha Ha CnJIaBTa SiGe ce CBHBa, KoeTO pe3YJI-
THpa B HaMaJI5IBaHe Ha meff Ha p-TOKoHOC11TeJIHTe.
CJIe)J,OBaTeJIHO, ilLs> IlULS :
(1) IlSiG/llsi;::; meffSi 1meffSiGe
B (22), 6a3HpaHK11 ce Ha nO)J,BIDKHOCTTa Ha KOMnpe-
c11paHH SiGe CJIOeBe, e nO-COqeHO CJIe)J,HOTOypaBHe-
H11e 3a IlLsp B SiGe 6a3a Ha TpaH311cTopa:
(2) 'IlLsp = Ilpmin + IIp/ {1 + N/2,35.1 017)]O.9}
36
Kb)J,eTO:
(3) Ilpmin= 44 - 20x + 850x2;
"x" - qaCTTa Ha Ge B SiGe CnJIaB (Hanp. O,l11JI110,2).
OTJIaraHe Ha SiGe CJIOU
KaKTo 6erne nOCOqeHO, SiGe CJIOH MO)l{e )J,a ce OT-
JIQ)Im qpe3 Pa3JI11qHH HHCKO- H cpe)J,HoTeMneparypHH
npouecH: MOJIeKYJI5IpHa enHTaKC115I, X11MHqHO OTJIara-
He OT ra30Ba cpa3a B CBp'bXBHCOK BaKYYM HJIH npH no-
HlI)KeHO HaJI5IraHe H T.H. OTJ1araHeTO ce npOBe)K)J,a npH
to = 550 -;- (600 -;- 650)OC C NGe:::; 15%. TIoHlI)KeH11eTo
Ha KOHueHTpaU115ITa Ha Ge B CJ1051nO3BOJI5IBa)J,a ce YBe-
JI11qH TeMneparypaTa Ha OTJIaraHe Ha CJIO5l.
I1pH n'bpBOHaqaJIH11Te eKcnepHMeHTH e H3nomYBa-
Ha MBE, KaTO np11 H5IKOHOT T5IX 6e3 npeK'bCBaHe Ha
npoueca (T.e. "Ha M5ICTO") ca OTJIaraH11 nOCJIe)J,OBaTeJI-
HO KOJIeKTOpHH5IT, 6a30BH5IT H eMHTepHH5IT CJ10H Ha
TpaH311cTopa, CJ1e)J,KoeTO nocpe)J,cTBoM Me3a-eUBaHe ce
cpopMHpa CTpYKTypaTa MY.
flempallJ,H5IT npocpHJI Ha TaK'bB TpaH311CTOp, onpe-
)J,eJIeH C SIMS, e nOKa3aH Ha cpHr. 2, a Ha cp11r. 3 - Ha-
npeqHOTO CeqeH11e Ha TpaH311cTopHaTa Me3a-cTpYKrypa.
10~
~ JOllS0
L.-Jto:::=
~IOlg0..f-:I:<!)::f25 1011
~
nee
~5~a~
. \Jc-~10'3
a O.t O.Z 0.3 (),,4
):(bJI6oQHHa [Il m]
C/Ju2.2JIe2upaUjUnporjJuJluHa mpmBucmop
'0.5 a.s
.......------......K OJIeKTop
C/Ju2.3Hanpe'lHO Ce'leHUe Ha mpaH3ucmop c Me3a-cmpyKmypa
"E+E", 5-6/2004 r.
KOHI.~eHTpa~mlTa Ha repMaHH51 e paBHOMepHa noCeqeHHeTOHa 6maTa H CThnaJIHa B 06JIaCTHTe Ha 06eM-
HH513ap51)],Ha eMHTepHH51H KOJIeKTOpHH51PN npexo-
)],H. lllHpoqHHa Ha aKTHBHaTa 6ma W B = 1000 E H
NOe = 12% onpe)],eJI51T YCJIOBH51)],OCTa no)], KpHTHqHa-
Ta )],e6eJIHHa. 3a npe)],oTBpaT51BaHe Ha peJIaKCa~H51Ta
Ha HanperHaTH51 CJIOMce H3nOJI3YBaTHHcKoTeMnepa-
TyPHH(to < 600°C) npo~eCH.
OCHOBHH CTpYlnypH Ha 6a30BaTa 06JIaCT HaSiGe HBT
I1oKmaHaTa Ha <pHr.3 cTpYKTypa cna)],a K'bMITbpBa-
Ta OT TpHTe CTPYKTypHHa 6moBaTa 06JIaCT Ha SiGeHBT:
1) I1'bpBaTa cTpYKTypa ce xapaKTepH3Hpa C nOCTO-
5lHHa(T.Hap. "paBHoMepHa") KOH~eHTpa~H51Ha Ge noCeqeHHeTO Ha ~51JIaTa6moBa 06JIacT. I1o-MaJIKaTa IIIH-
pOqHHa Ha 3a6paHeHaTa 30Ha L1EHa SiGe B cpaBHeHHe
C L1E(Si)HMa KaTO pe3YJITaT no- MaJI'bK 6apHep 3a HmKeK-~I15lTa Ha eJIeKTpOHHTe OT eMHTepa B 6maTa Ha TpaH3H-
CTopa. B pe3YJITaT Ha TOBa, npH )],a)],eHa nJI'bTHOCT Ha
TOKa Ha eJIeKTpOHHTe In, nJI'bTHOCTTa Ha TOKa Ha .n.yn-
KHTe J Ha HH)KeKTHpaHHTe OT 6maTa B eMHTepa p-TO-p
KOHOCHTeJIH HaMaJI51Ba, KoeTO BO)],H)],0 nOHJ1)KeHHe Ha
BpeMeTo Ha npeJIHTaHe "t Ha eMHTepa(18) H nOBHIlle-e
HHe Ha YCHJIBaHeTO no TOK hFE'
BHCOKaTa KOH~eHTpa~H51 Ha repMaHH51, He06xo)],H-
Ma 3a CBHBaHe Ha BaJIeHTHaTa 30Ha, e H3TOqHHK Ha )],HC-
JIOKa~HH Ha HeC'bOTBeTCTBHe H YCKopeHa )],H<PY3H51Ha
JIerHpall(H51 npHMec.
2) BTOpaTa cTpYKTypa (25) ce xapaKTepH3Hpa c 113-
MeHeHHe Ha KOH~eHTpa~H51Ta Ha repMaHH51 no CeqeHHe
Ha SiGe CJIOM, KaTO NOe = 0 npH eMHTepHH51 npexo)], H
NOe =NOemax npH KOJIeKTOpHH51PN npexo)],. KOH~eHTpa-
~HOHHH51Tnpo<pHJI Ha Ge C'b3)],aBa eJIeKTpHqHO nOJIe c
HHTeH3HTeT:::::: 104 vi cm, KoeTO HaMaJI51Ba BpeMeTO \ Ha
npeJIHTaHe Ha TOKOHOCHTeJIHTe npe3 6maia.E<peKTHB-
HOCTIa YHa eMHTepa 06aqe He ce npOMeH5l, nOHe)Ke eMH-
TepHH5l.T npexo)], e Ha npaKTHKa xOMonpexo)], (Noe = 0),
OT KoeTO CJIe)],Ba qe "te He HaMaJI51Ba,a hFE ce YBeJIHqaBaB cpe)],Ha CTeneH.
3) BnOCJIe)],cTBHe(26) 6eIlle H3npo6BaHa TpaH3Hc-
TopHa cTpYKTypa C'bCcpe)],HOHHBOHa NOe npH eMHTep-HH51npexo)], H nJIaBeH (nocTeneHHo H3MeH51ll( ce)
npo<pHJI Ha Ge no CeqeHHeTO Ha SiGe CJIOM.
XapaKTepHo 3a T03H THn cTpYKTypa e TOBa, qe IIIH-
pOqHHaTa Ha aKTHBHaTa6ma ce 1136Hpa TaKa, qe )],a Hece 06pmYBaT )],on'bJIHHTeJIHH)],HCJIOKa~HHHa HeC'bOT-
BeTCTBHeno BpeMe Ha CJIe)],Ball(HTeTepMHqHH npo~e-CH. EMHTepHI15lT )],onaHT ce B'bBe)K)],a qpe3 )],H<PY3H51OT
JIerHpaH nOJIHCHJIH~HM, KoeTO npaBH T03H THn CTPYK-
Typa C'bBMeCTHMa C C TeXHOJIOrHqHH51 npo~ec Ha CHJIH-
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~
~HeBHTe 6HnOJI51pHH TpaH3HcTopH C nOJIH-CHJIH~HeB
eMHTep; 6mOBH51T )],onaHT C'bll(O MO)Ke )],a ce B'bBe)],e C
)],H<pY3H5l.OT JIempaH nOJIHCHJIH~HM.
CHJIH~HeBHTe TpaH3HcTopH C mIaBHa 6a3a ca no)],-
XO)],51ll(H3a )],BoMHa )],H<pY3H51(27), nOHe)Ke )],H<PY3H-
OHHH51TKoe<pH~HeHT Ha 60pa B repMaHH51 (H OTTaM B
SiGe 6ma) e nO-MaJI'bK OTTO3HB Si (28), KoeTO npe.n.-
nOJIara )],OCTa no-cJIa60 H3MeHeHHe Ha JIerHpall(H51
npo<pHJI Ha 60pa no BpeMe Ha CJIe)],Ball(HTeTepMHq-
HH onepa~HH.
Bellie eKcnepHMeHTHpaHa aKTHBHa 6ma, npH KO51-
TO 60p'bT ce BKJIlOqBain-situ B SiGe CJIOM(25,29,30),
KaTOH51KOHI13roTBeHH Oll(e npe3 1990 + 1992r. TpaH-
3HCTOpH HMaT BneqaTJI51Ball(a TpaH3HTHa qeCTOTa
(fT = 73 + 75 GHz) (29,30); npH )],Pym )],onaHT'bTceB'bB)K)],aqpe3 fiJI, KoeTO 3aTpY)],H51BanOJIyqaBaHeTo Ha
aKTHBHa 6a3a C MaJIKa )],e6emma nopa)],H He06xo)],H-
MH51 oTrpeB 3a OTCpaH51BaHeHa B'bBe)],eHHTe C fiJICTPYKTypHHHapYIlleHH51.
H3BOfJ;H
1) HanpaBeHo e cpaBHeHHe Me)K)],YSiGe HBT, KJIa-
CHqeCKHTe Si 6HnOJI51pHHTpaH3HcTopH H GaAs HBT
.Si xeTeponpexo)],eH TpaH3HCTOp C SiGe 6ma ca C no
)],06PH AC H DC napaMeTpHp, 6bp30)],eMcTBHe H ~eHa.
2) B TeXHOJIOmqHH51npo~ec Ha H3roTB51HeHa SiGe
HBT B'bBe)],eHHHOBHTeXHOJIOrHQHHonepa~HH: HHCKO-
TeMnepaTypHo UHV ICVD-OTJIaraHe, MOJIeKYJI51pHOJI'b-
qeBa enHTaKCH51,6'bp3 TepMHqeH oTrpeB, JIerHpaHe Ha
eMHTepa H 6maTa OTnOJIHCHJIH~HMH T.H.
3) XapaKTepHHTe oc06eHocTH Ha cTpYKTypaTa Ha
SiGe HBT: ca nOJIHCHJIH~HeB eMHTep C BHCOKa e<peK-
THBHOCT, "HanperHaT" SiGe 6moB CJIOMC MaJIKa )],e6e-
JIHHa, CHJIHOJIerHpaHa aKTHBHa 6ma H KOHJ4TOBO)],I15l$1T)],0 nOJIyqaBaHe Ha nOBHCOKO bpJIH Hanpe)KeHHe H no)],-
BH)KHOCT Ha eJIeKTpOHH.
4) Pmme)],aHH ca OCHOBHHTeCTPYKTypHHa 6moBa-Ta 06JIaCT Ha SiGe HBT OTme)],Ha TOqKa Ha KOH~eHT-
pa~HOHHI15lnpo<pHJI Ha Ge B 6maTa.
JUITEPATYPA
[1] B. van Haaren, M. Regis et aI.,Low Frequency NoiseProperties of SiGe HBT's and Applications to Ultra-LowPhase-Noise Oscilators, IEEE Trans. on Microwave Theoryand Tech., voI.46, No 5, pp 42 + 51, May 1998.
[2] SiGe Sets Pace in RF IC Race, MicrowaveEngineering, pp 15 + 18, March 2002.
[3] M.Racanelli, K.Schuegraf et aI., Ultra High SpeedSiGe NPN for Advanced BiCMOS Technology, p. 263,IEDM Tech. Dig., 2002.
[4] T.H.Ning, Why BiCMOS and SOl BiCMOS, IBMResearch & DeveI., voI.48, No 23, pp 181 + 186, MarchiMay 2002.
37
[5] K.Neelis,K.Choi et aI.,A ComparisonofSi BJT,SiGeHBT and GaAs HBT Technologies for Linear Handset P.A.Applications, SayWorksSolutions Inc., September 9, 2002.
[6] D.L.Harameet al.,A HighPerfonnance Epitaxial SiGe-base ECL BiCMOS Tech-nology, lEDM Tech. Dig., pp 19 -;-22, 1992.
[7] F.Satoet aI., Sub-20 ps ECL Circuits with 50 GHz fmo.,Self-Aligned SiGe HBT's IEDM Tech. Dig., pp 397 -;-400,1992.
[8] TUchino et aI., Very-High-Speed Silicon BipolarTransistorswith in-situ Doped Polysilicon Emitter and RapidVapour-PhaseDoping Base, IEEE Trans. on ED, vol.42, No3, pp 406 -;-412, March 1995.
[9] D.L.Harame, J.H.Comfort et aI., SiGe Epitaxial-BaseTransistors: Part II:, Process Integration and AnalogApplications, IEEE Trans.on ED, ED-42,p 469, March 1995.
[10] R.Gutzfried, EBeiswanger, S.Gerlach, Design ofRFIntegrated Circuits using SiGe Bipolar Technology, BCTMTech. Dig., p.51, 1997
[11] D.L.Harame" J.H.Comfort et aI., Si/SiGe Epitaxial-BaseTransistors:Part I: Ma-terials,Physicsand Circuits,IEEETrans. on ED, ED-42, pp 455 -;-468, March 1995.
[13]R.Clmlz,M.Jostet aI.,A Fully Self-AlignedEpitaxial-Base Transistor, VLSI Tech. Dig., pp 89 -;-90, June 1989.
[14] J.N.Burghartz et aI., Selective Epitaxy for Transistor(SEBT), IEEE on ED Lett., vol.9, No 5, pp 259 -;-261, May1988.
[15] IN.Burghartz, J.H. Comfort etal., Sub-30 ps ECLCircuits using High fTSi and SiGe Epitaxial Base SEEWTransistors, lEDM Tech. Dig., pp 297 -;-300, 1990.
[16] L.H.Cammitz, N.MolI, An Analysis of Cutoff-Frequency Behavior of Microwa-ve Heterostructure BipolarTransistors, Compound Semiconductor Transistors, San-dipTiwari, New York, IEEE Press, pp 41 -;-42, 1993.
[17] J.N.Burghartz et aI., Identification of ParameterDepletion and EmitterPlug Eff-ects in Deep-Submicrometer,Shallow-Junction Polysilicon Emitter Bipolar Transis-tors,IEEE Trans. on ED, ED-39, pp 1477-;-1489, 1992.
[19] lWMathews, A.E.Brakeslee, Defects in EpitaxialMultilayers. Part I; Joum. of Crystal Growth; vol.27, pp 118-;-125, 1974.
[20] 1 WMathews, A.E.Brakeslee, Defects in EpitaxialMultilayers. Part 1;Joum. of Crystal Growth; vo1.32,pp 265-;-273,. 1979.
[21] J.H. van der Merve, Crystal Interfaces: Part I. Semi-Infinite Crystals, Jour. of Appl. Phys., vo1.37,P 117, 1963.
[22] T.K.Carns, S.K.Chun et aI., Hall MobilityMeasurements in Heavily Doped Si'.xGexStrained Layers,IEEE Trans. on ED, ED-4I, P 1273,1994. .
[23]TI.Camins et aI.,Small-Geometry,High PerformanceSi- Sil-xGexHeterojunc-tionBipolarTransistors,IEEE Electr.Dev. Lett., voUO, pp 503 -;-505, November 1969.
38
[24] TI.Camins, U.Nauka et aI., High FrequencySi/ Sil.xGexHeterojunction Bipolar Transistors, IEDM, Paper27.3, pp 647 -;-650, December 1989.
[25] G.L.Patton, J.M.e.Stora et aI., SiGe HeterojunctionBipolar Transistors: Physics and Design Issues, IEDM Tech.Dig., pp 13 -;-16,1990.
[26] lK.Comfort, E.F.Grabbeet aI.,SingleCrystal EmitterCap for Epitaxial Si and SiGe Base Transistors, IEDM Tech.Dig., pp 857 -;-860, 1991.
[27] D.Vook,TI.Camins et aI., Double-Diffused GradedSiGe-Base Bipolar Transis-tors, IEEE Trans.on ED, ED-4],No 6, pp 1013-;-1016, 1994.
[28] J.L.Hoyt et aI., Comparison of Boron Diffusion in Siand Strained Sil.xGexEpitaxial Layers, Appl. Phys. Lett.,vo1.62,pp 612 -;-614, 1993.
[29] G.L.Patton, J.K.Comfort et aI., 75 GHz fTSiGe BaseHeterojunction Bipolar Transistors, IEEE Electr. Dev. Lett.,voUl, pp 171 -;-173,April 1990.
[30] E.F.Grabbe,lH.Comfort et aI.,73 GHz Self-AlignedSiGe-Base Bipolar Tran-sistors with Phosphorous-DopedPolysilicon, IEEE Electr. Dev. Lett., voU3, pp 259 -;-261,May 1992.
[3I] G.Niu,Q.Liang et aI.,RF LinearityCharacteristics ofSiGe HBT's, IEEE on Microwave Theory and Tech., vo1.49,No 9, pp 1558 -;-1565, September 2001.
[32] lTang, G.Niu et aI., Modeling and CharacterizationofSiGe HBT Low-Frequen-cyNoise Figures-of-Meritfor RFICApplications, IEEE on MicrowaveTheory andTechniques,vo1.50,No 11,pp 2467 -;-2473, November 2003.
[33]M.P.Brassington,M.H. el Diwanyet aI.,AnAdvancedSingle_Level Polysilicon Submicrometer BiCMOSTechnology, IEEE Trans. on ED, ED-36, pp 712 -;-719,April1989.
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equipments (TU-SOFIA-1992)
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