6
XeTeponpeXO)J;HH6HnOJHlpHH TpaH3HCTOpH C'bC SiGe 6a3a. qacT II: KOHCTPYKTHBHH H TeXHOJIOrHQHH oco6eHocTH, QeCTOTHH xapaKTepHcTHKH, 6a30BH TpaH3HcTopHH CTPYKTypH MOXaMe)); A. A6));YJIa, reHO )J;HMHTpOB I..{efllia 0630pa e oa ce 3an03/1a5lm KOlicmpYKmopume Ha CBlJ YCUfleameflU c IiClJl1upaUfumeece no- UlUpOKOpa3npOClllpalieliue e CAIlJ, JIIIOHHJI U ee'le e peOlUfa eeponeiicKU cmpallu (repMaHU5I, (fJpall- lfU5I,XOflaHa 115l, Aecmpu5I, Hmanu5I) mun mpaH3ucmopu. B cmamU511na ca pa3ZfleOaHtI Memooume 3a noeUUtaeaHe Ha IV U cma6wlU3upaHe pa60mama lia mpaH3ucmopu 3a CBlJ npWLOJlCeHll5l. H3CfleOea1l0 e eflll5lIiUemOHa npoqnma Ha Ge u lla flezupaufll5l npu- Mec e aKmueHama 6a3a e"bpxy AC u OC napaMempume lia mpali3ucmopa. OnucaHu ca OClloeHUlne lnunoee cmpYKmypu- MSST, SSSB, SEEW, meXHume KOl-ICmpYKmUGHU UlneX1WflOZUllliUoc06eHocmu, cmoilHocmu- me Ha OCHOGHUlne AC u DC napaMempu. H3GOOUmeca, lie xOpU30HmClJlHU5ImUGepmUKCIJlIiLl5lm cKeWtUIiZ oOGeooxa 00 peUtaeaUf npOlfec G OUliai\1U'LHumexapaKmepucmuKu lia 6UnOfl5lpHUme mpaJl3ucmopu. B"bGeJICOaHemOHampaH3ucmopHu cmpYKmypu c eoullU'leH UOGOeHpolySi u peGOfllol1U5lma, U3GbpUteHa c ynompe6a Ha xemepo-epi-npexoo Sil SiGel Si c KOHmpoflupyeMa oerpopMaJfU51Ha SiGe CflO51uGUCOKO- OMell polySi eMUlnep omKpuxa HOGUxopU3oHmu 3a CBlJ npUJlOJICeHU5I Ha 6UnOfl5lpflUme xemeponpexoo- HU mpaH3ucmopu. Om H5IKOflKO ZOOUHUycneUtHO ce npeMUliaGa am ynompe6a Ha oucKpemHu npu60pu KbM uHlnezpupaHemo Ull1G lIun c nooflo:J/CKa 81 U naCUGIiUefleMeHmu G mbliKocflOiiliO U3nbflHellUe. Heterojunction bipolar transistors with SiGe base. Part IL rhe aim of this review is to examine the methods for increasing offrand stability work of the transistors in UHF applications. Investigation the profile effect of Ge; described are the basis type structures MSST, SSSB, SEEW their constructional and technologicalfeatures as well as AC and DC parameters. Horizontal and vertical scaling has brought tofundamental process in dynamical characteristics ofbipolar transistors. Applying of transistor structure with single and double poly-Si, and revolution carried out with use of hetero-epi-junction SilSiGeiSi with ruling deformation on SiGe layer and high-omic poly-Si emitter found new lines for UHF applications of heterojunction transistors. \~ qecToTHllTe xapaKTepllCTllKll Ha XOMOnpeXO,I:\HIITe TpaH3llCTOpll MO:iKe,I:\ace nO,I:\06p5ITno CJIe,I:\HllTeHaqllHYI: - BKJIIOqBaHe Ha cnOMaraTeJIHO nOJIe B 6a3aTa Ha TpaH3llCTopa - llMeHHO T03ll MeTO,I:\3ae,I:\HO C'1C CllJIHO HaMaJIeHllTe ,I:\'1JI60QllHll Ha eMllTepHH5I II KOJIeKTOpHH5I PN npexo,I:\ ca OCHOBHllTe npe,I:\nOCTaBKll 3a C'13,I:\aBaHe Ha SiGe HBT; - CllJIHO Marn:a6llpaHe Ha TpaH3llCTOpa B XOPll30H- TaJIHa II BepTllKaJIHa nOCOKa; - TepMHQHll npou,eCll C MaJIKa npO,I:\'1mKllTeJIHOCT II B'13MO:iKHOMllHllMaJIHll TeMneparypll (MaJI'1K TepMllQeH 61O,I:\:iKeT)CJIe,I:\enll-OTJIaraHeTO Ha SiGe-6a3a; .- nOHll:iKeHHe Ha napa3llTHHTe Kanau,llTeTll CTc II CTe Ha KOJIeKTOpHll5I II eMllTepHll5I npeXO,I:\ nOCpe,I:\CTBOM T. Hap. "CneHC'1pll"; - HaMaJIeHlle Ha C'1npOTllBJIeHlleTO fbb' Ha aKTllBHa- Ta 6a3a II Ha KOJIeKTOpHaTa 06JIaCT Ha TpaH3llcTopa 20 ') "LIecToTHlI xapaKTeplIcTIIKII Ha SiGe HBT Bl<.1lIO11CaHe Ha C110MaZamemIO nOlle C 6mama Ha mpwl3ucmopa BKJIIOQBaHeTO Ha cnOMaraTeJIHO nOJIe. (T.e. Ha Ge) B 6a3aTa Ha 6llnOJI5IpHll5I TpaH3llcTop nOBllIllaBa TpaH3llT- HaTa QeCTOTa fT Ha TpaH3llCTOpa [7]. 3aBllCllMOCTTa fT = f(NGe) e nOKa3aHa Ha cpllr. 1. OT qmc 1 ce Bll)K,I:(aCJIe,I:\HOTO: a) YBeJIllQaBaHeTo Ha KOHu,eHTpau,ll5ITa Ha repMaHll5I NGe B 6a3aTa BO,I:\ll,I:\OnOBllIllaBaHe Ha rpaHllQHaTa Qec- TOTa fT; 6) TpaH3llTHaTa qeCTOTa Ha SiGe HBT e onpe,I:\eJIeHO rrO-BllCOKa OT Ta3ll Ha KJIaCllQeCKll5I CllJIllu,lleB 6llnOJI5I- peH TpaH3llCTOp Si BJT (TpaH3llCTOp C Si 6a3a) B 06JIac- TTa Ha Cpe,I:\HllTe TOKOBe, KaTO npll nO-CllJIHO JIerllpaH (1,7.1017 cm-3) KOJIeKTOp Ta3ll pa3JIllKa CTaBa nO-CllJIHO mpa3eHa npll Cpe,I:\Hll II BllCOKll CTOHHOCTll Ha Ie' "E+E", 9-10/2004 r. -" ... -. '"

High-Speed Heterojunction bipolar transistors with SiGe base. Part II bulgarian

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Page 1: High-Speed Heterojunction bipolar transistors with SiGe base. Part II bulgarian

XeTeponpeXO)J;HH6HnOJHlpHH TpaH3HCTOpH C'bC SiGe 6a3a.

qacT II: KOHCTPYKTHBHH H TeXHOJIOrHQHH oco6eHocTH, QeCTOTHH

xapaKTepHcTHKH, 6a30BH TpaH3HcTopHH CTPYKTypH

MOXaMe)); A. A6));YJIa, reHO )J;HMHTpOB

I..{efllia 0630pa e oa ce 3an03/1a5lm KOlicmpYKmopume Ha CBlJ YCUfleameflU c IiClJl1upaUfumeece no-

UlUpOKOpa3npOClllpalieliue e CAIlJ, JIIIOHHJI U ee'le e peOlUfa eeponeiicKU cmpallu (repMaHU5I, (fJpall-

lfU5I,XOflaHa 115l,Aecmpu5I, Hmanu5I) mun mpaH3ucmopu.

B cmamU511na ca pa3ZfleOaHtI Memooume 3a noeUUtaeaHe Ha IV U cma6wlU3upaHe pa60mama lia

mpaH3ucmopu 3a CBlJ npWLOJlCeHll5l.H3CfleOea1l0 e eflll5lIiUemOHa npoqnma Ha Ge u lla flezupaufll5l npu-

Mec e aKmueHama 6a3a e"bpxy AC u OC napaMempume lia mpali3ucmopa. OnucaHu ca OClloeHUlnelnunoee

cmpYKmypu- MSST, SSSB, SEEW, meXHume KOl-ICmpYKmUGHUU lneX1WflOZUllliUoc06eHocmu, cmoilHocmu-me Ha OCHOGHUlneAC u DC napaMempu. H3GOOUmeca, lie xOpU30HmClJlHU5ImU GepmUKCIJlIiLl5lmcKeWtUIiZ

oOGeooxa 00 peUtaeaUf npOlfec G OUliai\1U'LHumexapaKmepucmuKu lia 6UnOfl5lpHUme mpaJl3ucmopu.

B"bGeJICOaHemOHa mpaH3ucmopHu cmpYKmypu c eoullU'leH U OGOeHpolySi u peGOfllol1U5lma, U3GbpUteHa

c ynompe6a Ha xemepo-epi-npexoo Sil SiGel Si c KOHmpoflupyeMa oerpopMaJfU51Ha SiGe CflO51u GUCOKO-

OMell polySi eMUlnep omKpuxa HOGUxopU3oHmu 3a CBlJ npUJlOJICeHU5IHa 6UnOfl5lpflUme xemeponpexoo-

HUmpaH3ucmopu. Om H5IKOflKOZOOUHUycneUtHO ce npeMUliaGa am ynompe6a Ha oucKpemHu npu60pu

KbM uHlnezpupaHemo Ull1G lIun c nooflo:J/CKa81 U naCUGIiUefleMeHmu G mbliKocflOiiliO U3nbflHellUe.

Heterojunction bipolar transistors with SiGe base. Part IL rhe aim of this review is to examine

the methods for increasing offrand stability work of the transistors in UHF applications. Investigationthe profile effect of Ge; described are the basis type structures MSST, SSSB, SEEW their constructionaland technologicalfeatures as well as AC and DC parameters. Horizontal and vertical scaling has broughttofundamental process in dynamical characteristics ofbipolar transistors. Applying of transistor structurewith single and double poly-Si, and revolution carried out with use of hetero-epi-junction SilSiGeiSiwith ruling deformation on SiGe layer and high-omic poly-Si emitter found new lines for UHF applicationsof heterojunction transistors.

\~

qecToTHllTe xapaKTepllCTllKll Ha XOMOnpeXO,I:\HIITe

TpaH3llCTOpll MO:iKe,I:\ace nO,I:\06p5IT no CJIe,I:\HllTeHaqllHYI:- BKJIIOqBaHe Ha cnOMaraTeJIHO nOJIe B 6a3aTa Ha

TpaH3llCTopa - llMeHHO T03ll MeTO,I:\3ae,I:\HO C'1C CllJIHO

HaMaJIeHllTe ,I:\'1JI60QllHll Ha eMllTepHH5I II KOJIeKTOpHH5I

PN npexo,I:\ ca OCHOBHllTe npe,I:\nOCTaBKll 3a C'13,I:\aBaHe

Ha SiGe HBT;

- CllJIHO Marn:a6llpaHe Ha TpaH3llCTOpa B XOPll30H-

TaJIHa II BepTllKaJIHa nOCOKa;

- TepMHQHll npou,eCll C MaJIKa npO,I:\'1mKllTeJIHOCT II

B'13MO:iKHOMllHllMaJIHll TeMneparypll (MaJI'1K TepMllQeH

61O,I:\:iKeT)CJIe,I:\enll-OTJIaraHeTO Ha SiGe-6a3a;

. - nOHll:iKeHHe Ha napa3llTHHTe Kanau,llTeTll CTc II CTe

Ha KOJIeKTOpHll5I II eMllTepHll5I npeXO,I:\ nOCpe,I:\CTBOM T.

Hap. "CneHC'1pll";

- HaMaJIeHlle Ha C'1npOTllBJIeHlleTO fbb' Ha aKTllBHa-

Ta 6a3a II Ha KOJIeKTOpHaTa 06JIaCT Ha TpaH3llcTopa

20

')

"LIecToTHlI xapaKTeplIcTIIKII Ha SiGe HBT

Bl<.1lIO11CaHeHa C110MaZamemIO nOlle C 6mama Ha

mpwl3ucmopaBKJIIOQBaHeTO Ha cnOMaraTeJIHO nOJIe. (T.e. Ha Ge) B

6a3aTa Ha 6llnOJI5IpHll5I TpaH3llcTop nOBllIllaBa TpaH3llT-

HaTa QeCTOTa fT Ha TpaH3llCTOpa [7]. 3aBllCllMOCTTa

fT = f(NGe) e nOKa3aHa Ha cpllr. 1.

OT qmc 1 ce Bll)K,I:(aCJIe,I:\HOTO:

a) YBeJIllQaBaHeTo Ha KOHu,eHTpau,ll5ITa Ha repMaHll5I

NGe B 6a3aTa BO,I:\ll,I:\OnOBllIllaBaHe Ha rpaHllQHaTa Qec-

TOTa fT;

6) TpaH3llTHaTa qeCTOTa Ha SiGe HBT e onpe,I:\eJIeHOrrO-BllCOKa OT Ta3ll Ha KJIaCllQeCKll5I CllJIllu,lleB 6llnOJI5I-

peH TpaH3llCTOp Si BJT (TpaH3llCTOp C Si 6a3a) B 06JIac-

TTa Ha Cpe,I:\HllTe TOKOBe, KaTO npll nO-CllJIHO JIerllpaH

(1,7.1017 cm-3) KOJIeKTOp Ta3ll pa3JIllKa CTaBa nO-CllJIHO

mpa3eHa npll Cpe,I:\Hll II BllCOKll CTOHHOCTll Ha Ie'

"E+E", 9-10/2004 r.

-",...,

-. '"

Page 2: High-Speed Heterojunction bipolar transistors with SiGe base. Part II bulgarian

"C/Ju2.1.3aeucuMocm/y.=f(lc) npu BJTu SiGe HBT

c pa3JlU'iHa KOHlleHmpGlIUJl Ha KCUTeKmOpa Nc

061!CHeHlIeTO Ha T031I ecpeKT e B KOHTpOJIlIpaHaTa

,l.(ecpOpMalJ,lI1! Ha HaI1perHaTaTa SiGe 6a3a [14]. I1plI

B'b3HIIKBaHe Ha ,l.(IICJIOKalJ,1I1iHa HeC1>OTBeTCTBlie C BII-

COKa CTOMHOCT(T.e. I1peMIiHaBaHe Ha,l.( "KpIiTlIqHaTa"

,l.(e6eJIIiHa Ha CJIO1!) HaI1pe)KemreTO Ha SiGe CJIOM ce

oCB06Q)K,l.(aBa, KoeTO BO,l.(II,l.(O3ary6a Ha nOqTII 0,5 ~ Eg;

CI10MaraTeJIHOTO I1OJIe ce HaMaJI5IBa, C1>OTBeTHO"b Ha-

pacTBa II 61>p30,l.(eMCTBlieTo Ha TpaH3lIcTopa, BKJI. fT,HaMaJI1!Ba.

I1plI BIiCOKIi CTOMHOCTII Ha Ic KOHlJ,eHTpalJ,lI5lTa Ha

eJIeKTpOHIiTe I1peBlIlliaBa JIerlipaHeTo B 06JIaCTTa Ha

I1pOCTpaHCTBeHII1! 3ap1!,l.(OI13, KBa3IIHeYTpaJIHaTa 6a3a

cf pa3IIIlIp1!Ba (ecpeKT Ha Kirk) II KoraTO npeMIiHe 3a,l.(

Kpa1! Ha SiGe CJIOM,ce cpopMlIpa I10TeHlJ,lIaJIeH 6aplIep,

KOlho 3aTOpM031!Ba TpaHCI10pTa Ha TOKOHOCIiTemne,

HaMaJI1!Ba hFE II YBemrqaBa tpd'

OT cplir. 1 ce BlDK,l.(a,qe npli Ic > 9 mA TpaH3lITHaTaqeCTOTa Ha SiGe TpaH3lIcTop e I10-HIiCKaOTTa31I Ha SiTpaH3lIcTop, T.e. TpaH3IICTOp1>TC SiGe 6a3a liMa I1pe-

,l.(IIMCTBOB 61>p30,l.(eMCTBlie I1pe,l.(XOMOI1peXO,l.(HII1!TpaH-

3lICTOp caMO B onpe,l.(eJIeH 06XBaT Ha Ic (I10-TOqHO Ha

Jc)' a IIMeHHO B 06JIaCTTa Ha npeXO,l.(a MaJIKlI -;- Cpe,l.(HIi

KOJIeKTOpHIi TOKOBe, nOpa,l.(1I KOeTO TOMHaMlipa nplIJIO-

)KeHlIe I1plI HeHaCIITeHIITe HC (ECL) II MaJIOClirHaJI-HIiTe aHaJIOlOBIi HC.

CIiJIHOTO HaMaJI5!BaHe Ha fT I1plI BIiCOKIi CTOMHOCTII

Ha Ic MO)Ke ,l.(a ce KOMneHclipa B 1I3BeCTHa CTeI1eH I10CJIe,l.(HIiTe HaqlIHII:

a) pa3IIIlIp5!BaHe Ha Ge I10-HaB1>Tpe B KOJIeKTOpa (HO

SiGe CJIOMMO)Ke ,l.(a I1peMIiHe OT cTa6lIJIeH B MeTaCTa-

6IIJIeH);

6) I10BlIlliaBaHe Ha JIerlipaHeTO Ha KOJIeKTOpa (nyH-

KTlIpHaTa I1paBa Ha cplir. 1), C KoeTO oI1pe,l.(eJIeHO ce I10-

,l.(06p5!BaT qeCTOTHIiTe CBOMCTBa Ha SiGe TpaH3lIcTop,

HO ce HaMaJI5!BaT I1p06IIBHIITe Hanpe)KeHII5! BU CBOII

BU CEOII ce I10BlIlliaBa KOJIeKTOpHII5!T KaI1alJ,IITeT CTC.

"E+E", 9-10/2004 r.

41

C/JU2.2.fz. =f(UCEd 3a mpWI3llCmOpU c Si U SiGe 6a3a.

Ha cplir. 2 e I10Ka3aHa 3aBliCliMOCTTa fT = feU CEO)3,

TpaH3lICTOpli C Si 6a3a (Si BJT) II C SiGe 6a3a.

BlDK,l.(ace, qe CYBeJIlIqaBaHe Ha UCE(T.e. Ha OI13) fHaMaJI5!Ba.

I1plI I10,l.(XO,l.(1!ru,0lI36paHa I1pO,l.(1)mKHTeJIHOCT H TeM

I1epaTypa Ha I1pOlJ,eCHTe CJIe,l.( OTJIaraHeTO Ha SiGe CJIoi

(T.e. MaJI1>K TepMHqeH 61O,l.()KeT), I1p!1 SiGe HBT He c,

Ha6JIlO,l.(aBa ,l.(erpa,l.(alJ,!15! Ha Ha xapaKTepHCTHKI1Te, Hm

Ka3aHO C ,l.(pyrH ,l.(YM!1: KOHTpOJIHpaHaTa ,l.(ecpopMalJ,H

Ha 6a30B!11! CJIOM MQ)Ke ,l.(a ce H3I10JI3Ba 3a I10,l.(06p5!BaHI

Ha CKopocTTa Ha TpaH3!1CTOp!1Te.

Mau(a6upalle Ita cmpYKmypama Ita mpall3ucmopl

qecToTHHTe xapaKTepHCTI1KII Ha SiGe HBT MQ)KI

,l.(a ce nO,l.(06p1!T !1 nOCpe,l.(CTBOM MaIlJ,a6lIpaHe H;

TpaI-I3!1CTOpa B XOp!130HTaJIHa II BepT!1KaJIHa I10COK8

C1>IlJ,HOCTTa Ha T03H I1polJ,ec e HaMaJI1!BaHe Ha Jl,1>JI60

q!1H!1Te Ha KOJIeKTOpH!11! npexo,l.( xJC!1 eM!1TepH!11! I1pe

XO,l.(Xje' onpe,l.(eJI5!He Ha OI1T!1MaJIHaTa KOHlJ,eHTpalJ,!11!H;Ge B SiGe 6a3a, eBeHTYaJIHO I10B!1IIIaBaHe Ha JIer!1pa

HeTO Ha 6a3aTa !1 KOJIeKTOpa C lJ,eJI I10-,l.(06pa pa60Ta H;

TpaH3!1CTOpa I1PH CBp1>XBHCOKH(RF) qeCTOTH.

XOp!130HTaJIHOTO Maru,a6!1paHe ce npOBe)K,l.(a 3;

CBe)K,l.(aHe ,l.(0 M!1H!1MYM Ha I1apa3HTHHTe KaI1alJ,HTeTI

CTc !1 CTe; 3a I10H!1)KeH!1e Ha C1>npOT!1BJIeH!1eTO rbb' H;

aKT!1BHaTa 6a3a ce KOHTpOJI!1pa pa3,l.(eJI1!HeTO Ha eM!1

Tepa !1 C!1JIHOJIer!1paHaTa B1>HIIIHa 6a3a, KaTO lJ,em'a I

HaMaJI5!BaHe Ha IIIHpOqHHaTa Ha "CB1>p3Baru,aTa" 06JIac'

,l.(0 ,l.(e6eJI!1HaTa Ha ,l.(!1eJIeKTpI1'-IeH CJIOH (T. Hap

"CI1eMC1>p"), cpopMHpaH B1>PXYCTpaH!1qHHTe CTeH!1 H;

eMHTepa CJIe,l.(elJ,BaHeTO Ha OTBopa Ha eMHTepa [1].

Ynompe6a ua cneiicopu npu SiGe HBTYI1oTpe6aTa Ha CI1eMC1>pe HaJIO){(!1TeJIHa OT me,l.(H:

TOqKa Ha I10BHIIIaBaHe Ha TpaH3!1THaTa qeCTOTa fT, I10

He)Ke I1pe,l.(OTBpaT5!Ba ,l.(!1cpY3!15!Ta"HaB1>H" Ha ,l.(OnaHT8

I1opa,l.(!1 KoeTO CI1eHC1>pH ce H3I10JI3BaT B pe,l.(HlJ;a pa60

T!1 I10 SiGe HBT, KaTO ce 3aI10qHe c OK!1CeH CI1eMC1»

2

-~JII~-

Page 3: High-Speed Heterojunction bipolar transistors with SiGe base. Part II bulgarian

Ta6JIH~a 1

("B'b3maBHHu:a") orn;e OT 1982 r. c )],e6eJIHHa 2000 A H

ce CTl1rHe )],0 i-THn cneilc'bpH (Si C'bC C06CTBeHa npo-

BO)],MMOCT),B'bBe)],eHH no BpeMe Ha OTJIaraHeTO Ha SiGe

cnOM c )],e6enMHa 100 A 3a KOJIeKTOpHM5Inpexo)], (iCB)

H C'bOTBeTHO C )],e6enHHa lOA 3a eMHTepHWI npexo)],

(iCE) [3]. B'bBe)J{)J,aHeTO Ha nOCOqeHMTe CneMC'bpM no-

BHIIIaBa TpaH3HTHaTa qeCTOTa Ha TpaH3HcTopa OT 38

Ha 60GHz, a c)'MapHoTo BpeMe Ha 3a)],p'b)KKa tpd Ha TpaH-3HcTopa ce nOHH)l<aBa OKOJIO 1,6 n'bTH (Ta6JI. 1).

Gruhle [3] )],0Ka3 a, qe npOeKTHpaHeTo Ha eMMTep-

HWI npexo)], Ha SiGe HBT e MHOro KpHTMqeH npou:ec H

OKa3Ba rOJI5IMO BJIH5IHHe B'bPA')' Bq-xapaKTepHCTMKHTe

Ha TpaH3HcTopa. 3a nonyqaBaHe Ha )],06PM pe3ynTaTM

npH CThnaJIeH MHTep<peMc Si/SiGe PN npeXO)],'bT Tp5I6-

Ba )],a 6'b)],e C'bC CTp'bMeH npo<pHJI, KaTO )],H<PY3HOHHOTO

pa3MHBaHe Ha KOHu:eHTpaU:HoHHM5I rpa)],HeHT Ha Heo-

CHOBHHTe TOKOHOCHTenM )],OpH OT nOp5I)],'bKa Ha caMO

H5IKOJIKO)],eceTKM aHrcTpboMa nOBMIIIaBa 3HaqHTenHO

tpd' KoeTO HaJIara nOM'bp)KaHe Ha nerHparn;WI npo<pHJlC TOqHOCT 5 A , nopa)],M KoeTO e HaJIO)KHTeJIHa ynoTpe-

6aTa Ha i-cnoM Ha eMMTepHH5I npexo)],. B MOMeHTa 10 -;-

20 A eMHTepeH CneMC'bp ce M3nOn3Ba npH SiGe HBT,C KoeTO, KaKTOBeqe 6eIIIe nOCOqeHO, ce H365IrBa E - B

)],H<pY3M5ITaHaB'bH, a TOBa )],OBe)],e)],0 nOCTMraHe Ha

fT= 101 GHzorn;enpe31993r. [4].

TeXHOJIOrHQeHnpo~ec

IIpH CTaH)],apTHH5I npou:ec C )],BoeH nOJIHCHJIHU:HM3a

<popMHpaHe Ha SiGe HBT B'b3HMKBaT cne)],HHTe TeXHO-

nOrMqHH 3aTpY)],HeHH5I:

- eU:BaHeTO Ha 6a30BH5I nOJIHCMnMU:MMMO)Ke )],a no-

Bpe)],M HaMHparn;H5I ce no)], Hero MOHOKpHCTaJIeH CHJIH-

U:HM;

- 3an'bnBaHeTO Ha "3a)],'bJI6aBaHeTO" Ha eMMTepHH5I

OTBOp C BTOpM nOnHCHnHU:HeB CJIOMOrpaHMqaBa XOPM-

30HTaJIHOTO Marn;a6HpaHe Ha CTpYKrypaTa Ha TpaH3MC-

Topa.TIoCOqeHMTe npM )],BOMHM5InOJIMCMJIHU:MM3aTpY)],He-

HM5Ice M365IrBaT npM ynoTpe6a Ha e)],MHMqeH nOJIMCM-

nMU:MeB CJIOM- [5], [6] nO-K'bCHO B [7]. I13nOn3BaMKM

e)],MHMqeH nOnHCMJIHU:HMM)],BoeH )],M<pY3MoHeHnpou:ec,

ce KOM6MHMpaTnpe)],MMcTBaTa Ha XOpM30HTaJIHH5I MBep-

TMKaJIHM5IcKeMnMHr (Marn;a6MpaHe). 3a)],a ce BnMIIIe no-

COqeHaTa HBT cTpYKTYpa B xOMonpexo)],HH5I 6MnOJI5IpeH

npou:ec, Si/SiGe/Si-cJIOeBeTe ce omaraT qpe3 CeJIeKTMB-

Ha enMTaKCM5IOT ra30Ba <pa3a npM nOHM)KeHO HaJI5IraHe

22

(LPCVD) CJIe)], <popMMpaHe Ha n+-CKpMTM5I cnoM, a KO-

JIeKTOpHM5IT enM-cnOM M nOKaJIHaTa OKHCHa H30naU:H5I

ce <popMMpaTno cTaH)],apTHaTa TeXHOJIOm5IHa Si xo-

MonpeXO)],HMTpaH3McTopH..IJ:e6enMHMTeHa cnoeBeTe Ha

SiiSiGe/Si-cTpYKrypaTaca C'bOTBeTHO170/650/350 A C

nOqTM JIMHeMHO M3MeHeHMe Ha KOHu:eHTpaU:M5ITa Ha

repMaHM5I no HanpeqHOTO CeqeHMe Ha SiGe CJIOM.

NGemax ~ 20%, KaTO Ta3H MaKCHMaJIHa KOHu:eHTpaU:M5I e

M36paHa TaKa, qe SiGe CJIOM)],a 6'b)],e no)], KpHTHqHaTa

)],e6eJIMHa.

ba30BM5IT M eMMTepHM5IT )],onaHT ce B'bBe)l<.D.aTno-

cpe)],cTBoM MOHI-IOJIerMpaHe (HJI) Ha nO-flHCMJIMU:He-

BM5ICflOM, KaTO BpeMeHaTa Ha 6a30BaTa M eMMTepHaTa

)],H<PY3H5Ica CBe)],eHM )],0 MHHHM)'M 3a nOflyqaBaHe HaMaKCMMaJIHO T5ICHa aKTMBHa 6a3a H HaMaJI5IBaHe Ha )],e-

6eJIMHaTa Ha He06xo)],MMH5I HanperHaT CJIOH, KoeTO no-

3BOn5IBa nO-BMCOKa MaKCMMaJIHa I,:OHu:eHTpaU:M5IHa Ge,

T.e. nO-rOn5IMa nO)],BH)KHOCT Ha P-TOKoHocMTenMTe M

KaTO pe3YJITaT - nO-rOn5IMa cneU:M<pMqHa eJIeKTpOnoBo-

)],MMOCTHa aKTHBHaTa 6a3a.

CTpYKrypaTaHa SiGe HBT e nOKa3aHaHa <pHr.3, aflemparn;H5ITnpo<pHn- Ha <pHr.4.

PN npexo.n;

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Page 4: High-Speed Heterojunction bipolar transistors with SiGe base. Part II bulgarian

)J;'bn604HHaTa Ha KOneKTOpHH5I npexo)), e Xjc= 500 -;-

600 A , a Ha eMHTepHH5I npexo)), xJe = 200 A .

IIpo6neM.u npu mexHonOZUl/HURnpol{ecE)),HH OT OCHOBHHTenpo6neMH 3a nOCTHraHe Ha

H)),eMHH xapaKTepHKTHKH Ha PN npeXO)),HTeHa xeTe-

POCTpYKTypaTa Si/SiGe e Ka'-IeCTBOTOHa emnaKCHan-HHTe CJlOeBe - T.e. ynoTpe6aTa Ha MM'bK TepMWleH"6IO)),)!(eT" cJle)), enHTaKCHanHOTO OTnaraHe Ha SiGe

CJlOH.King 11)),p. [8] H Gibbons H )),p. [9] 113nOn3BaXa

HHcKoTeMneparypHa CVD TeXHOJlOrl151-T.Hap. "nHMl1-

THpaHa peaKIJ,HOHHa o6pa6oTKa" (flPO, amn. LRP).&0 ce 6a311pa Ha 6'bp3H 113MeHeHH5!Ha TeMneparypa-Ta Ha no)),nO)!(KaTa3a nOCTHraHe Ha CTp'bMHHKOHIJ,eHT-

paIJ,HOHHl1 npoqmnl1 Ha nerl1paIl(l15! npHMec 11 Ha

repMaHl15!. KaKTO6erne nOCO4eHOB '-IaCTI, B no-paHeHBapHaHT enHTaKCHaJiHOTOHapaCTBaHe Ha eMHTepHl15!,

6a30BH5! 11KOJleKTOpHH5!CJlOHce H3B'bpUIBarne lIOCJle-)),OBaTenHO,6e3 Me)!()),HHHO113Ba)!()J,aHeHa Si nO)),JlmK-

Ka, B e)),HH H C'bIl( peaKTOp. Opl1eHTl1pOB'b'-IHHTe

)),e6eJll1HHHa KOJleKTOpa,6a33Ta H eMHTepa B [9] ca C'bOT-

BeTHO2 ).lm/200A 14100A. OM114Hl1TeKOHTaKTl1caHa 6a3aTa Ha Ti/Al-;- 1%Si.

B [10] 11 [11] ca H3roTBeHl1 6HIIOn5!pHl1 TpaH3HCTO-

pH C'bC Cl1J1HIJ,HeBaH SiGe 6a3a C nnaBeH KOHIJ,eHTpaIJ,H-

OHeHnpoqmn - T.Hap. "nJiaBHa" 6a3a H nOnHCl1J1l1IJ,HeB

eMl1Tep, H3non3BaHKH Hl1CKOTeMneparypHo emnaKCH-MHO OTJlaraHe Ha cnoeBeTe. KaKTO 6erne oT6eJl5!3aHO B

'-IaCT I, HaH-H3nHTamI51T MeTO)),3a OTnaraHe Ha SiGe 6a3a

3a HBT 11HHTerpMHH CXeMl1 Ha 6a3aTa Ha HBT e XH-

MWIHOTO OTJlaraHe OT ra30Ba <pa3a B CBp'bXBHCOK BaKY-

YM (UHV/CVD), a)),aTITHpaH mpBOHa'-IMHO 3aBiCMOS

npHnO)!(eHH5!. IIpl1 UHV/CVD SiGe CJlOeBe ce OTnaraT

npH to = 400 -;- 500°C C'bC CKOpOCT 4 -;- 40 A Imin. KOH-TpOJl'bT Ha pa3MepHTe e npeIJ,H3eH. PaBHoMepHocTTa Ha

OTJlaraHeTO OT nJiaCTHHa K'bM nJiaCTHHa e 1%, a OTnpo-IJ,ec K'bM npoIJ,ec - 5%. KpHTH4eH npeme)), Ha TeXHOJlO-

rH'-IHl1Te MeTO)),l13a H3rOTB5IHe Ha SiGe TpaH3HCTOpl1 e

HanpaBeH B [12].

KOHI~eHTpaIJ,IIOHeH npocplIJI Ha Ge B 6a3aTa Ha

HBT II napaMeTpII Ha nOJIyqeHIITe TpaH3IICTOpII

Berne YCTaHoBeHo, '-Ie 3a)),a ce nonY'-IaT MHors> )),o6pl1

DC 11)),HHaMl1'-IHl1napaMeTpH Ha HBT npH HHCKOH BH-

COKOC'b)),'bp)KaHHe Ha Ge B 6a3aTa, e Heo6xo)),l1Ma ynoT-

pe6a Ha HapaCTBaIl(a no CJlO)!(eH 3aKOH KOHIJ,eHTpaIJ,H5I

Ha Ge - Hanp. TpH'bI"bnHl1, TpaneIJ,OBl1)),Hl1 11 IJ,HcppOBH

npocpHnH [3]. IIOCO'-IeHHTe no-rope KOHIJ,eHTpaIJ,HOHHH

npocpHJlH (6e3 IJ,HcppOB115I)ca nOKa3aHH Ha CPHI'.5, a CTOH-

HOCTl1Te Ha napaMeTpHTe Ha nOJlY'-IeHHTe TpaH311CTO-

pH - B Ta6J1. 2.

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15 . .~

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200 4000

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KOJIeKTOp HHChK Cpe):\eH HHChK HHChK Cpe):\eH HHChK Cpe):\eHPNnpexo):\ Nnp Nnp Nnp Nnp Nnp Nnp NnpRB 12.0 7.4 5.6 7.8 5.8 5.9 5.2

BUCBO 3.5 3.3 3.6 3.5 3.7 4.0 4.0

VA 25 30 47 70 83 56 40

B 77 67 72 88 48 21 20

B*VA 1925 2010 3384 6160 3684 1176 800

fTmax 41 43 41 46 43 31 30

fmax. 40 33 42 46 43 31 30

Rbb 207 286 268 211 188 265 248

RE 20.8 22.7 26.5 31.1 30 20.1 21.0

Min.r 21.1 25.3 23.6 21.7 19.9 28.7 28.9

Page 5: High-Speed Heterojunction bipolar transistors with SiGe base. Part II bulgarian

SIMS-npoqmJTbT Ha SiGe TpaH3HCTOpCTpaneIJ;OBH-

,lJ,eHnpoqmn Ha Ge e nOKa3aH Ha cpHr. 6, a cxeMaTlflIHO

HanpeQHO CeQeHHe Ha TpaH3HcTopa - Ha cpHr. 7.

fn-situ ner'Umn! IH)lv-Si CnOHECC

3aIIbJIHeH c ECC KaHaDKa I

003a

c[Juz. 7. HanpelJHo Ce'teHUe Ha mpclHsucmop CbCcaJ\liOCOeMeCmeHa enu-6asa

CTpYKryplI Ha SiGe HBT

OCHOBHHTe THnOBe CTPYKT)'pH ca nOCOLleHHHa cpHr. 8.

KaKTo 6ewe nOCOLieHO, e,lJ,HOOT OCHOBHHTe npHnmKe-

HlliI Ha SiGe CBQ TpaH3HcTopH B HHTerpanHO H3n'bJIHe-

HI-Ie e B cBp'bx6'bp3HTe ECL HC. 3a IJ;eJITa e Heo6xo,lJ,IIMO

,lJ,a ce CBe,lJ,aT,lJ,OMIIHIIMYM napa3IITHIITe ecpeKTH, B T.LI.

II KoneKTopHaTa BpeMeKoHcTaHTa rbb"Cb,c' 06ll1;OTO

C'bnpOTIIBJIeHIIe Ha 6a3aTa II KOJIeKTOpHII5!T KanaIJ;IITeT

CTc ca KOMnOHeHTH Ha fT II ~nax'

3a nO,lJ,O6p5!BaHe Ha LleCTOTHIITe CBOHCTBa e Heo6-

XO,lJ,IIMaCaMOC'bBMeCTeHa CTpYKTypa, eMIITep'bT C 6a-

3aTa, a CaMOC'bBMeCTeHII5!T KoneKTopeH KOHTaKT

HaMan5!Ba CTc'

1. MSST CTpYKTypaTa rapaHTHpa IJ;5!JIOCTHOIIJIII

B3aHMHO CaMOC'bBMeCT5!BaHe Ha aKTHBHHTe 06JIaCTII

Ha TpaH3IIcTopa. T5! ce xapaKTepH3IIpa C MIIHIIManHII

SiGeA) HBT C HECAMOCbBMECTIIMA

CTPYKTYPA

napa3HTHH KanaIJ;IITeTH, nOHe)lCe B'bHWHaTa 6a3a e ca-

MOC'bBMeCTeHa Cnp5!MO eMIITepa H KoneKTopa. T'bH

KaTO enH-6a3aTa ce OTnara B'bpXY CIInIIIJ;IIeBa nJIac-

TIIHa 6e3 npe,lJ,BapHTeJIHO ,lJ,ecpIIHIIpaHa KapTIIHa, TO3H

TIIn CTpYKTypa rapaHTHpa BIICOK paH,lJ,eMaH Ha TpaH-

3IIcTopHTe.

2. SSSB (IIJIH SEBT) CTpYKT)'paTa ce OTJIHLlaBa C'bC

CeneKTIIBHO OTnmKeHa B'bTpeWHa enHTaKCHanHa 6a3a B

npe,lJ,BaplnenHo cpopMHpaH!15! eMHTepeH OTBOp. B'bTpew-

HaTa 6a3a ce OTnara Llpe3 MoneKyn5!pHO-n'bLieBa enIITaK-

CH5! C ra30B H3TOQHIIK HnH nOCpe,lJ,CTBOM XIIMHYHO

OTJIaraHe OT ra30Ba cpa3a B CBp'bXBHCOK BaKYYM. ,IJ;e6e-

nIIHaTa Ha enII-6a3aTa BapIIpa B o6xBaTa 300 -;- 500 A ,

KaTO ce nonyyaBaT TpaH3HcTopH C fmax = 50 -;- 120 GHz.B [1] e ,lJ,OKJIa,lJ,BaHO3a CaMOC'bBMeCTeHa TpaH3IIcTopHa

CTpYKT)'pa C,lJ,BOeHnonHCIInHIJ;IIH II SiGe 6a3a H rOJI5!MO

YCIIJIBaHe no TOK hFE'

3. SEEW CTpYKT)'paTa CaMOC'bBMeCT5!BaHe ce nOCTH-

ra Llpe3 ynoTpe6a Ha ceneKTHBHO enII-JIaTepanHo "np!!.

nOKpIIBaHe" (oYB'bprpoy) B'bpXY T'bHKa eMIITepH3

B'b3fJ1aBHIIIJ;a H nOCne,lJ,Balll;O OKIICJIeHHe 3a cpopMIIpaHe

Ha eMMTepHl15! np030peIJ; II HacTpoHKa Ha ,lJ,e6enIIHaTa

Ha B'bHWHaTa (nacIIBHaTa) 6a3a. <DIIpMaTa IBM [13J

c'b06IIJ;11 3a TpaH3l1CTOp C fT > 50 GHz npl1II3nOJl3BaHe

Ha TaKaBa CTpYKTypa C NGe = 11%.KaTo l1,lJ,eaneH Bapl--laHT 3a enHTaKCl15! 3a aKTl1BHaTa

6a3a MmKe,lJ,ace npIIeMe HIIcKoTeMnepaTypHa(to <500°C) CeJIeKTIIBHaenHTaKCII5!Cin-situ JIerIIpaHeC6opC Bl1COKa KOHIJ;eHTpaIJ;l15!. Oco6eHo BHIIMaHIIeTp5!6Ba

,lJ,ace 06'bpHe Ha opIIeHTaIJ;II5!Ta Ha eMl1TepHaTa KapTl1-

Ha C IJ;eJIoCIIryp5!BaHe Ha paBHoMepHo naTepanHo O'bB'b-

prpoy 11Ha nOCJIe,lJ,BaIIJ;OTOOKIICJIeHl1e 3a nOJIYLlaB3He

Ha paBHoMepeH II HenpeK'bCHaT OKHceH CJIOH, BKJI. 11no

'bfJ1HTe Ha eMIITepa.

H

B) HBT C'bC CAMOCbBMECTlIMACTPYKTYPA

A:

1) C npocT eMIiTepeHnpo30pen; (simple emitter window).2) C BLHillHa6a3a npeAIi enliTaKCIiH(extrinsic base before epi ).3) C BLHillHa6a3a CJIeAenllTaKCIiH(extrinsic base after epi ).B:1) Me3a nOAooeH CaMOC'bBMeCTeHTpaH3l1cTop, 1I30JIlipaH C nJIIITKIIKaHaBKII (meza self-

aligned shallow-trench transistor-MSST)(27)TpaH311cTop C'bCCeJIeKTIIBHaenu -oa3a B'bpXYB'bHillHaTa oa3a II eMIfTepHIfH OTBOp(selective epi-base transistor-SEBT) IfJIIfT.Hap.TpaH3IfCTOp C'bCcynep CaMOC'bBMeCTeHaCeJIeKTIfBHOHapaCHaTa SiGe oa3a(super self-aligned selective grown base-SSSB)(28)TpaH311cTop c enlf-eMIfTepeH npo30pen; (SEEW) (29)

c[JUZ.8. GCHOel/Ume munoee cmpYKmypu Ha SiGe HBT

2)

-3)

24 "E+E", 9-10/2004 r.

Page 6: High-Speed Heterojunction bipolar transistors with SiGe base. Part II bulgarian

1I3BO,lJ;H

QecTOTHI1Te XapaIcrepI1CTI1KI1 Ha 6I1nOJI51pHI151 TpaH-

3I1CTOp MO)l(e ,[(a ce nO,[(06p51T 1.Jpe3 B'bBe)l(,[(aHe Ha Ge B

aKTI1BHaTa 6a3a, Marn:a6I1paHe B XOpI130HTaJIHa 11 Bep-

TI1KaJIHa IlOCOKa, HaMaJIeHI1e Ha C'bnpOTI1BJIeHI1eTO Ha

aKTI1BHaTa 6a3a ,[(0 pa3YMHI1 CTOHHOCTI1 11 CBe)I<JJ:aHe

,[(0 MI1HI1MYM Ha napa3I1THI1Te KaIlaQI1TeTI1 11 ,[(I1<pY3I151-

Ta "HaB'bH".

1. B'bBe)K,[(aHeTO Ha CIlOMaraTeJIHO nOJIe 11 Ha KOH-

QeHTpaQHOHHI1 npo<pI1JII1 Ha Ge B 6a3aTa Ha SiGe HBT

BJII151e B'bpXY eJIeKTpI1'IeCKI1Te IlapaMeTpI1 Ha IlOJ1Y'Ie-

HI1Te TpaH3I1CTOpI1.

2. BJIWIHI1eTO Ha CneHC'bpI1Te IlPI1 eMI1TepHI15l 11 KO-

JIeKTOpHI15l PN Ilpexo,[( B'bpXY ,[(I1HaMI11.JHHI1Te napaMeT-

pH Ha SiGe HBT IlPI1 no,[(60p Ha OIlTI1MaJIHaTa HM

,[(e6eJII1Ha TpaH3HTHaTa 1.JeCTOTace I13pa351Ba B CJIe,[(HO-

TO: MO)l(e,[(a ce nOBI111II1 1,572,5 n'bTI1, C'bOTBeTHO cY-

.\I:1pHOTO BpeMe Ha 3aJJ:p'b)KKa,[(a ce HaMaJII11,6 n'bTH.

J. TeXHOJ10rI1'IHI1Te 3aTpY,[(HeHI151 npI1 I13roTB51HeTO

Ha CTPYKTypI1 Ha SiGe HBT C ,[(BoeH nOJII1CI1JII1QHHor-

paHI14aBaT XOpI130HTaJIHOTO Marn:a6I1paHe Ha TpaH3I1C-

TopHaTa CTpYKTYpa. OT Ta3I1 rJIe,[(Ha TO'IKa e pa3rJIe,[(aHa

H cTpYKTypaTa C e,[(I1HI11.JeHnOJII1CI1JII1QI1H11,[(BoeH ,[(11-

<PY3I10HeH npoQec, npI1 KO51TOce KOM6I1HI1paT Ilpe,[(HM-

CTBaTa Ha XOpH30HTaJIHOTO 11 BepTI1KaJIHOTO

Marn:a6HpaHe.

4. Pa3rJIe,[(aHI1 ca KOHCTPYKTI1BHI1Te 11TeXHOJIOrI14-

HI1Te oc06eHOCTI1 Ha TPI1 TI1na TpaH3I1CTOpHH CTPYKTY-

pI1. OT rJIe,[(Ha TO1.JKa Ha paH,[(eMaH e IlO,[(XO,[(51rn:a

MSST-cTpYKTypaTa, a 3a rapaHTI1paHe Ha BI1COKH4ec-

TOTHI1 IlapaMeTpH - SEEW cTpYKTypaTa.

JIHTEPATYPA

[1] Ganin, E., T.C.Chen, Epitaxial-base double-polyself-aligned bipolar transistors, IEDM Tech. Dig, 1990, pp 603-606.

[2] Brassington,M.P.,M.H. El-Diwanyet aI.,An advancedsingle-levelpolysilicon sub micrometerBiCMOS technology,IEEE Trans.on Electron Devices, ED-36, April 1989,pp 712-719.

[3] Gruhle, A., The influence of emitter-base junctiondesign on collector saturation current, idealityfactO/; Earlyvoltage and device switching speed of Si/SiGe HBT's, IEEETrans. on Electron Devices, ED-41, February 1994, pp 198-203.

[4] Patton, G. 1., J. H. Comfort et aI., 75 GHz-fr SiGebase heterojunctionbipolar transistors,IEEE ElectronDeviceLetters, voUl, April 1990, pp 171-173.

"E+E", 9-10/2004 r.

[5] Kirchgessner, J., J. Teplik et aI., An advance 0,4 umBiCMOS technologyfor highpe/jormance ASiC applications,mDM Tech. Dig., 1991, pp 97-99.

[6] Tang,D.D., T.C.Chen et aI., The design and electricalcharacteristicsofhigh-peljormance single-poly ion-implantedbipolar transistors, IEEE Trans. on Electron Devices, ED-36, September 1989,pp 1703-1710.

[7] Vook,D., T.I. Kamins et aI., Double diffilsed gradedside-back bipolar transistors, IEEE Trans. on ElectronDevices, ED-41, No 6,1994, pp 1013-1016.

[8] King, c.A., J.1. Hoyt et aI.,Si/ SiJ.pe, heterojunctionbipolar transistorsproduced by limited reactionprocessing,IEEE Electron Device Lett. EDL-lO, 1989,p. 52.

[9] Gibbons, J.F. et aI., SiGe-base poly-emitter junctionbipolar transistorsfabricated by limited reactionprocessing,IEDM Tech. Dig.1988, pp566.

[10] Meyerson, B.S., Low temperature silicon epitaxy byultra-high vacuumlchemical vapour deposition, App. Phys.Lett. March 1986, pp797-799.

[11]Harame, D.L., E.F.Grabbeet aI.,A high pe/jormanceepitaxial SiGe-base ECL BiCMOS technology, IEDM Tech.Dig.December 19992, pp19-22.

[12] Harame, D.L., J.H. Comfort, E.F. Grabbe et aI., Si/SiGe epit(L'(ial-base transistors - Part i: Ma-terials, physicsand circuits,IEEE Trans. on Electron Devices,ED-42, March1995, pp 455-468.

[13] Burghartz, J.N., J.H. Comfort et aI., Sub-30 ps ECLcircuits, using high-fT Si and SiGe epitaxial base SEEWtransistors, IEDM Tech. Dig.1990, pp297-300.

[14] r.)J;HMHTpOB, M.A6)],YJIa, TIpe)],cTO5!Il\a ny6JIHKall,H5!

)]:ou. .lI.-p. HUlK. r. )]:IIMHTpOB e pa60THJI B npo)],bJI/KeHHe

Ha 7 rO)],HHH no npOeKTHpaHe H TeXHOJIOrH5! Ha )],HcKpeTHH Si

npH6opH H 19 rO)],HHH no npOeKTHpaHe H TeXHOJIOrH5! Ha 6H-

nOJI5!pHH HC. EHJI e pbKOBO.D.HTeJI CeKlJ,H5!" HHTerpaJIHH cxe-

MH " H .D.HpeKTOp Ha HHCTHTYT no nOJIynpOBO.D.HHKOBH

npH6opH,EoTeBrpa.D.. B MOMeHTa npeno)],aBa TITI TIpH6oPH,

lJ,mpPOBa cxeMOTeXHHKa H aHaJIoroBa cxeMOTeXHHKa. HaYlJ-

HH HHTepecH: 6HnOJl5!pHH TpaH3HcTopH 3a CB1.J npHJlOlKeHHR;

KOHCTPYKlJ,H5!, TeXHOJIOrWI H (jJYHKlJ,HOHaJIHH Bb3MmKHOCTH

Ha aHaJlOrOBH HC, pa60TeIl\H B RF o6xBaT.

E-mail: [email protected])],pec: EOTeBrpa)]"nJI.OcBO6o)!()],eHHe5,Bx.B,an.9.TeJl:0723-5233

M.A.AbdulJah, MSc. on Electronics and Medical

equipments (TU-SOFIA-1992))J;oKTopaHT

E-mail: [email protected]: CO(jJH5!,cry)],eHcKH rpa)],,6J1.54B,cT.30 I

TeJI:0888282766

TIoCT'bnHJIa Ha 24.10.2003 r.

25