40
Dr. Ahmed H. Madian-VLSI 1 Very Large Scale Integration (VLSI) Dr. Ahmed H. Madian [email protected] Lecture 6

Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

  • Upload
    others

  • View
    5

  • Download
    0

Embed Size (px)

Citation preview

Page 1: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Dr. Ahmed H. Madian-VLSI 1

Very Large Scale Integration (VLSI)

Dr. Ahmed H. Madian [email protected]

Lecture 6

Page 2: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Dr. Ahmed H. Madian-VLSI 2

Contents

Array subsystems Gate arrays technology Sea-of-gates Standard cell Macrocell Technology FPGA Technology

Page 3: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Dr. Ahmed H. Madian-VLSI 3

Gate Arrays and Sea-of-Gates

This means to construct a common base array of transistors and personalize the chip by altering the metallization (metal and via masks) that is placed on top of the transistors.

Page 4: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Dr. Ahmed H. Madian-VLSI 4

Gate Arrays Technology

prefabricated wafers I/O stages predefined

regular array of fets and interconnection channels

interconnection defines functionality

features size: 100 - 1M gates

short turn around time

cheap at medium quantities

Unsuitable for regular structures like RAM, PLA, ALU

Page 5: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Gate Array — Sea-of-gates

rows of

cells

routing channel

uncommitted

VDD

GND

polysilicon

metal

possiblecontact

In1 In2 In3 In4

Out

Uncommited

Cell

Committed

Cell

(4-input NOR)

Dr. Ahmed H. Madian-VLSI 5

Page 6: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Dr. Ahmed H. Madian-VLSI 6

Sea-of-Gate Technology

prefabricated wafers I/O stages predefined regular array of fets, no

reserved interconnection channels

interconnection defines functionality

features size: 100 - 1M gates short turn around time cheap at medium quantities suitable for regular structures

like RAM, PLA, ALU

Page 7: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Dr. Ahmed H. Madian-VLSI 7

Standard Cell Technology

complete fabrication process predefined library of base

functions

modular similar to TTL families

features chip size limits complexity

cheap at high quantities

standardized cell height

unsuitable for regular structures

more flexible and compact than gate array

Page 8: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Standard cell layout

Layout made of small cells: gates, flip-flops, etc.

Cells are hand-designed.

Assembly of cells is automatic:

cells arranged in rows;

wires routed between (and through) cells.

Dr. Ahmed H. Madian-VLSI 8

Page 9: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Guidelines to Creating a Standard Cell Library

Vertical and Horizontal Routing Grids:

- Cell pins, with the exception of abutment pins (VDD and GND) must be placed on the intersections of the vertical and horizontal routing grids.

- Vertical and horizontal routing grids may be offset with respect to the cell’s origin, provided that the offset distance is exactly one-half of the grid spacing.

- The cell height must be a multiple of the horizontal grid spacing; the cell width must be a multiple of the vertical grid spacing.

Dr. Ahmed H. Madian-VLSI 9

Page 10: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Figure 1: Horizontal Routing Grid Examples

Horizontal Grid Spacing

(a) Without Offset

One-half Horizontal Grid Spacing

One-half Horizontal Grid Spacing

Horizontal Grid Spacing

(b) With Offset

Cell Origin

Dr. Ahmed H. Madian-VLSI 10

Page 11: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Figure 2: Vertical Routing Grid Examples

(a) Without Offset (b) With Offset

Vertical Grid Spacing One-Half Vertical Grid Spacing

Cell Origin

Dr. Ahmed H. Madian-VLSI 11

Page 12: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Figure 3: Sample Standard Cell Routing Grid

(a) Without Offsets (b) With Vertical and

Horizontal Offsets

Dr. Ahmed H. Madian-VLSI 12

Page 13: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Standard cell structure

VDD

VSS

n tub

p tub

Intra-cell wiring

pullups

pulldowns

pin

pin

Fee

dth

rough a

rea

Dr. Ahmed H. Madian-VLSI 13

Page 14: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Standard cell design

Pitch: height of cell.

All cells have same pitch, may have different widths.

VDD, VSS connections are designed to run through cells.

A feedthrough area may allow wires to be routed over the cell.

Dr. Ahmed H. Madian-VLSI 14

Page 15: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Cell Design

Standard Cells General purpose logic

Can be synthesized

Same height, varying width

Datapath Cells For regular, structured designs (arithmetic)

Includes some wiring in the cell

Fixed height and width

Dr. Ahmed H. Madian-VLSI 15

Page 16: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

What are Routing Grids For?

• The routing grids are where the over-the-cell metal routing will be routed.

• The pins of your standard cells should always lie on the intersections of the horizontal and vertical routing grids. Although some CAD tools will route to off-grid pins, this may cause some other complications.

Dr. Ahmed H. Madian-VLSI 16

Page 17: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Single-row layout design

Routing channel

cell cell cell cell cell

cell cell cell cell cell

wire Horizontal track Vertical track

height

Dr. Ahmed H. Madian-VLSI 17

Page 18: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Routing channels

Tracks form a grid for routing.

Spacing between tracks is center-to-center distance between wires.

Track spacing depends on wire layer used.

Different layers are (generally) used for horizontal and vertical wires.

Horizontal and vertical can be routed relatively independently.

Dr. Ahmed H. Madian-VLSI 18

Page 19: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Routing channel design

Placement of cells determines placement of pins.

Pin placement determines difficulty of routing problem.

Density: lower bound on number of horizontal tracks needed to route the channel.

Maximum number of nets crossing from one end of channel to the other.

Dr. Ahmed H. Madian-VLSI 19

Page 20: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Pin placement and routing

before

a b c

b c a

before

a b c

b c a

Density = 3 Density = 2

Dr. Ahmed H. Madian-VLSI 20

Page 21: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Example: full adder layout

Two outputs: sum, carry.

sum

carry

x1

x2

n1

n2

n3

n4

Dr. Ahmed H. Madian-VLSI 21

Page 22: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Layout methodology

Generate candidates, evaluate area and speed.

Can improve candidate without starting from scratch.

To generate a candidate:

place gates in a row;

draw wires between gates and primary inputs/outputs;

measure channel density.

Dr. Ahmed H. Madian-VLSI 22

Page 23: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

A candidate layout

x1 x2 n1 n2 n3 n4

a

b

c

s

cout

Density = 5

Dr. Ahmed H. Madian-VLSI 23

Page 24: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Improvement strategies

Swap pairs of gates.

Doesn’t help here.

Exchange larger groups of cells.

Swapping order of sum and carry groups doesn’t help either.

This seems to be the placement that gives the lowest channel density.

Cell sizes are fixed, so channel height determines area.

Dr. Ahmed H. Madian-VLSI 24

Page 25: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Left-edge algorithm

Basic channel routing algorithm.

Assumes one horizontal segment per net.

Sweep pins from left to right:

assign horizontal segment to lowest available track.

Dr. Ahmed H. Madian-VLSI 25

Page 26: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Example

A B C

A B B C

Dr. Ahmed H. Madian-VLSI 26

Page 27: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Limitations of left-edge algorithm

Some combinations of nets require more than one horizontal segment per net.

B A

A B

aligned

?

Dr. Ahmed H. Madian-VLSI 27

Page 28: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Vertical constraints

Aligned pins form vertical constraints.

Wire to lower pin must be on lower track; wire to upper pin must be above lower pin’s wire.

B A

A B

Dr. Ahmed H. Madian-VLSI 28

Page 29: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Dogleg wire

A dogleg wire has more than one horizontal segment.

B A

A B

Dr. Ahmed H. Madian-VLSI 29

Page 30: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Rat’s nest plot

Can be used to judge placement before final routing.

Dr. Ahmed H. Madian-VLSI 30

Page 31: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Guidelines to Creating a Standard Cell Library

• A standard cell library must contain at least the following cells to be able to implement any function:

- NAND

- NOR

- NOT

- DFF

• Additionally, you can expand the standard cell library to include additional cells like Tie-high, Tie-low cells, I/O Pads, and multiple-input gates (e.g. a 4-input NOR gate).

Dr. Ahmed H. Madian-VLSI 31

Page 32: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

33

Standard Cells

Cell boundary

N Well

Cell height 12 metal tracks Metal track is approx. 3 + 3

Pitch = repetitive distance between objects

Cell height is “12 pitch”

2

Rails ~10

In Out

V DD

GND

Dr. Ahmed H. Madian-VLSI

Page 33: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

34

Multi-Fingered Transistors One finger Two fingers (folded)

Less diffusion capacitance

Dr. Ahmed H. Madian-VLSI

Page 34: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Standard cell

Dr. Ahmed H. Madian-VLSI 35

Page 35: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Datapath Layout Example: Adder

Standard cell layout

Bit-slice cell layout

Dr. Ahmed H. Madian-VLSI 36

Page 36: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Arithmetic and Logic Unit (ALU)

Functions

Arithmetic (add, sub, inc, dec)

Logic (and, or, not, xor)

Comparison (<, >, <=, >=, !=)

Control signals

Function selection

Operation mode (signed, unsigned)

Output

Operation result (data)

Flags (overflow, zero, negative)

Dr. Ahmed H. Madian-VLSI 37

Page 37: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Architecture of a CPU

Flags: overflow, zero, etc.

Read/write

Mem

Control

Data path Register

File

Dr. Ahmed H. Madian-VLSI 38

Page 38: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Simple ALU Example

Tile identical processing elements [© Prentice Hall]

Bit 3

Bit 2

Bit 1

Bit 0

Regis

ter

Ad

der

Shif

ter

Mult

iple

xer

Data

in

Data

Out

Control

Dr. Ahmed H. Madian-VLSI 39

Page 39: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Dr. Ahmed H. Madian-VLSI 40

Macrocell Technology

complete fabrication process combines semi- and full custom

technologies

predefined library of base functions

generators for regular structures

features chip size limits complexity

short design, long fabrication time

cheap at high quantities

high flexibility, compact layouts

Page 40: Very Large Scale Integration (VLSI) · Dr. Ahmed H. Madian-VLSI 3 Gate Arrays and Sea-of-Gates This means to construct a common base array of transistors and personalize the chip

Dr. Ahmed H. Madian-VLSI 41

Full Custom Technology

complete fabrication process

total flexibility, only limited by layout rules

manual design

features

chip size limits complexity

long design and fabrication time

efficient use of silicon area

cheap only at highest quantities (ex. uP, memories, ...)