Tab - Infineon Technologies

1

IPT210N25NFD

Rev.2.0,2016-01-11Final Data Sheet

Tab

12 3 4 5

86 7

HSOF

DrainTab

GatePin 1

SourcePin 2-8

MOSFETOptiMOSª3Power-Transistor,250V

Features•N-channel,normallevel•FastDiode(FD)withreducedQrr•Optimizedforhardcommutationruggedness•Verylowon-resistanceRDS(on)•175°Coperatingtemperature•Pb-freeleadplating;RoHScompliant•QualifiedaccordingtoJEDEC1)fortargetapplication•Halogen-freeaccordingtoIEC61249-2-21

Table1KeyPerformanceParametersParameter Value UnitVDS 250 V

RDS(on),max 21.0 mΩ

ID 69 A

Type/OrderingCode Package Marking RelatedLinksIPT210N25NFD PG-HSOF-8 210N25NF -

1) J-STD20 and JESD22

2

OptiMOSª3Power-Transistor,250VIPT210N25NFD


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

3



1MaximumratingsatTA=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current ID --

--

6954 A TC=25°C

TC=100°C

Pulsed drain current1) ID,pulse - - 276 A TC=25°C

Avalanche energy, single pulse EAS - - 610 mJ ID=37A,RGS=25Ω

Gate source voltage VGS -20 - 20 V -

Power dissipation Ptot - - 375 W TC=25°C

Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category;DIN IEC 68-1: 55/175/56

2Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction - case RthJC - 0.2 0.4 K/W -

Thermal resistance, junction - ambient,minimal footprint RthJA - - 62 K/W -

Thermal resistance, junction - ambient,6 cm2 cooling area2) RthJA - - 40 K/W -

3Electricalcharacteristics

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 250 - - V VGS=0V,ID=1mA

Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS,ID=267µA

Zero gate voltage drain current IDSS --

0.110

1100 µA VDS=200V,VGS=0V,Tj=25°C

VDS=200V,VGS=0V,Tj=125°C

Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on) - 18.0 21.0 mΩ VGS=10V,ID=69A

Gate resistance3) RG - 2.8 4.2 Ω -

Transconductance gfs 70 139 - S |VDS|>2|ID|RDS(on)max,ID=69A

1) See Diagram 32) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.PCB is vertical in still air.3) Defined by design. Not subject to production test.

4



Table5Dynamiccharacteristics1)Values


Input capacitance Ciss - 5300 7000 pF VGS=0V,VDS=125V,f=1MHz

Output capacitance Coss - 300 400 pF VGS=0V,VDS=125V,f=1MHz

Reverse transfer capacitance Crss - 6 9.4 pF VGS=0V,VDS=125V,f=1MHz

Turn-on delay time td(on) - 13 - ns VDD=125V,VGS=10V,ID=34.5A,RG,ext=1.6Ω

Rise time tr - 13 - ns VDD=125V,VGS=10V,ID=34.5A,RG,ext=1.6Ω

Turn-off delay time td(off) - 43 - ns VDD=125V,VGS=10V,ID=34.5A,RG,ext=1.6Ω

Fall time tf - 13 - ns VDD=125V,VGS=10V,ID=34.5A,RG,ext=1.6Ω

Table6Gatechargecharacteristics2)Values


Gate to source charge Qgs - 24 - nC VDD=125V,ID=69A,VGS=0to10V

Gate to drain charge1) Qgd - 8 - nC VDD=125V,ID=69A,VGS=0to10V

Switching charge Qsw - 16 - nC VDD=125V,ID=69A,VGS=0to10V

Gate charge total1) Qg - 65 86 nC VDD=125V,ID=69A,VGS=0to10V

Gate plateau voltage Vplateau - 4.5 - V VDD=125V,ID=69A,VGS=0to10V

Output charge1) Qoss - 144 - nC VDD=125V,VGS=0V

Table7ReversediodeValues


Diode continous forward current IS - - 69 A TC=25°C

Diode pulse current IS,pulse - - 276 A TC=25°C

Diode forward voltage VSD - 0.9 1.2 V VGS=0V,IF=69A,Tj=25°C

Reverse recovery time1) trr - 134 268 ns VR=125V,IF=IS,diF/dt=100A/µs

Reverse recovery charge1) Qrr - 406 - nC VR=125V,IF=IS,diF/dt=100A/µs

1) Defined by design. Not subject to production test.2) See ″Gate charge waveforms″ for parameter definition

5



4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 50 100 150 2000

50

100

150

200

250

300

350

400

Ptot=f(TC)

Diagram2:Draincurrent

TC[°C]

ID[A

]

0 50 100 150 2000

20

40

60

80

ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

10-1 100 101 102 10310-1

100

101

102

103

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-1 10010-2

10-1

100

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tp);parameter:D=tp/T

6



Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 1 2 3 4 50

50

100

150

20010 V

8 V

7 V

6.5 V6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.drain-sourceonresistance

ID[A]

RDS(on

) [m

Ω]

0 50 100 1500

10

20

30

40

4.5 V5 V

5.5 V

6 V8 V

10 V

RDS(on)=f(ID);Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 80

50

100

150

200

175 °C25 °C

ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj

Diagram8:Typ.forwardtransconductance

ID[A]

gfs [S]

0 40 80 120 1600

20

40

60

80

100

120

140

160

180

200

gfs=f(ID);Tj=25°C

7



Diagram9:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [m

Ω]

-60 -20 20 60 100 140 1800

10

20

30

40

50

60

70

98%

typ

RDS(on)=f(Tj);ID=69A;VGS=10V

Diagram10:Typ.gatethresholdvoltage

Tj[°C]

VGS(th) [V]

-60 -20 20 60 100 140 1800.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

2670 µA

267 µA

VGS(th)=f(Tj);VGS=VDS;parameter:ID

Diagram11:Typ.capacitances

VDS[V]

C[p

F]

0 20 40 60 80 100 120 140 160100

101

102

103

104Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=1MHz

Diagram12:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.5 2.0100

101

102

103

25 °C175 °C25°C, 98%175°C, 98%

IF=f(VSD);parameter:Tj

8



Diagram13:Avalanchecharacteristics

tAV[µs]

IAS [A]

100 101 102 103100

101

102

25 °C

100 °C

125 °C

IAS=f(tAV);RGS=25Ω;parameter:Tj(start)

Diagram14:Typ.gatecharge

Qgate[nC]

VGS [V]

0 20 40 60 800

2

4

6

8

10

200 V

125 V

50 V

VGS=f(Qgate);ID=69Apulsed;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-60 -20 20 60 100 140 180220

230

240

250

260

270

280

290

VBR(DSS)=f(Tj);ID=1mA

Gate charge waveforms

9



5PackageOutlines

Z8B00169619

REVISION

ISSUE DATE

EUROPEAN PROJECTION

02

20-02-2014

DOCUMENT NO.

E5

E4

K1

e

MILLIMETERS

A

DIM

MIN MAX

INCHES

MIN MAX

b1

c

D

D2

E

E1

N

L

2.20 2.40 0.087 0.094

9.70

0.40

10.28

9.70

1.60

9.90

0.60

10.58

10.10

2.10

0.382

0.016

0.405

0.382

0.063

0.390

0.024

0.416

0.398

0.083

8 8

1.20 (BSC) 0.047 (BSC)

b 0.70 0.90 0.028 0.035

1) partially covered with Mold Flash

b2 0.42 0.50 0.017 0.020

H

H1

11.48 11.88 0.452 0.468

H2 7.15 0.281

H3 3.59 0.141

H4 3.26 0.128

L1 0.70 0.028

3.30 0.130

7.50 0.295

8.50 0.335

9.46 0.372

6.55 6.75 0.258 0.266

4.18 0.165

L4 1.00 1.30 0.039 0.051

L2 0.60 0.024

2

SCALE

0

4mm

0

2

Figure1OutlinePG-HSOF-8

10



RevisionHistoryIPT210N25NFD

Revision:2016-01-11,Rev.2.0

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2016-01-11 Release of final version

TrademarksofInfineonTechnologiesAG

AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.

TrademarksupdatedAugust2015

OtherTrademarks

Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

WeListentoYourCommentsAnyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected]

PublishedbyInfineonTechnologiesAG81726München,Germany©2015InfineonTechnologiesAGAllRightsReserved.

LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

InformationForfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesOffice(www.infineon.com).

WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

Documents

Tab - Infineon Technologies