BFP780 - Infineon Technologies

BFP780High linearity RF medium power transistor

Product descriptionThe BFP780 is a single stage high linearity and high gain driver amplifier based on NPNsilicon germanium technology.

Feature list• High maximum RF input power PRFin,max = 20 dBm• Minimum noise figure NFmin = 1.2 dB at 900 MHz, 5 V, 30 mA• OIP3 = 34.5 dBm at 900 MHz, 5 V, 90 mA• OP1dB = 23 dBm at 900 MHz, 5 V, 90 mA

Product validationQualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Potential applications• Commercial and industrial wireless infrastructure• ISM band medium power amplifiers and drivers• Automated test equipment• UHF television, CATV and DBS

Device informationTable 1 Part information

Product name / Ordering code Package Pin configuration Marking Pieces / ReelBFP780 / BFP780H6327XTSA1 SOT343 1 = B 2 = E 3 = C 4 = E R1s 3000

Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions

Datasheet Please read the Important Notice and Warnings at the end of this document v4.0www.infineon.com 2018-09-26

http://www.infineon.com/bfp780/order

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http://www.infineon.com/bfp780/simulation

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https://www.infineon.com

Table of contents

Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2 Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

4 Electrical performance in test fixture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64.1 DC parameter table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64.2 AC parameter tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64.3 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94.4 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5 Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20


Table of contents

Datasheet 2 v4.02018-09-26

1 Absolute maximum ratings

Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified)

Parameter Symbol Values Unit Note or test conditionMin. Max.

Collector emitter voltage VCE – 6.15.1

V TA = 25 °CTA = -40 °C

Collector base voltage VCB 15 –

Instantaneous total collector current iC 240 mA DC + RF swing

DC collector current IC 120 –

DC base current IB -1 5

RF input power PRFin – 20 dBm In- and output matched

Dissipated power Pdiss 600 mW TS ≤ 93 °C 1), regardderating curve in Figure 1.

Junction temperature TJ 150 °C –

Operating case temperature TA -40 105 2)

Storage temperature TStg -55 150

Attention: Stresses above the max. values listed here may cause permanent damage to the device.Exposure to absolute maximum rating conditions for extended periods may affect devicereliability. Maximum ratings are absolute ratings; exceeding only one of these values may causeirreversible damage to the component.

1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB.2 At the same time regard TJ,max.


Absolute maximum ratings

Datasheet 3 v4.02018-09-26

2 Recommended operating conditionsThe following table shows examples of recommended operating conditions. As long as maximum ratings areregarded, operation outside these conditions is permitted, but it may increases failure rate and reduces lifetime.For further information refer to the quality report available on the BFP780 product page.

Table 3 Recommended operating conditions

Operatingmode

Ambienttempera-ture 1)

Collectorcurrent

DCpower 2)

RF outputpower 3)

Efficiency 4) Dissipatedpower 5)

Thermalresistanceof PCB 6)

Junctiontempera-ture 7)

TA[°C]

IC[mA]

PDC[mW]

PRFout[mW](dBm)

η[%]

Pdiss[mW]

RthSA[K/W]

TJ[°C]

Compres-sion

55 90 450 200 (23) 45 250 120 110

Final stage 55 90 450 115 (20.5) 25 340 70 110

High TA 85 50 250 75 (19) 30 175 35 110

MaximumTA

105 20 100 45 (16.5) 45 55 35 110

Linear 55 50 250 20 (13) 8 230 120 110

Very linear 55 90 450 23 (13.5) 5 430 35 110

1 Is the operating case temperature respectively of the heatsink.2 PDC = VCE* IC with VCE = 5 V.3 RF power delivered to the load, PRFout = η * PDC.4 Efficiency of the conversion from DC power to RF power, η = PRFout / PDC (collector efficiency).5 Pdiss = PDC - PRFout. The RF output power PRFout delivered to the load reduces the power Pdiss to be

dissipated by the device. This means a good output match is recommended.6 RthSA is the thermal resistance of the PCB including heat sink, that is between the soldering point S and

the ambient A. Regard the impact of RthSA on the junction temperature TJ, see below. The thermal designof the PCB, respectively RthSA, has to be adjusted to the intended operating mode.

7 TJ = TA + Pdiss * RthJA.RthJA = RthJS + RthSA.RthJA is the thermal resistance between the transistor junction J and the ambient A.RthJS is the combined thermal resistance of die and package, which is 95 K/W for BFP780, see Chapter 3.


Recommended operating conditions

Datasheet 4 v4.02018-09-26

3 Thermal characteristics

Table 4 Thermal resistance

Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.

Junction - soldering point RthJS – 95 – K/W –

0 25 50 75 100 125 1500

100

200

300

400

500

600

700

TS [°C]

P diss

,max

[mW

]

Figure 1 Absolute maximum power dissipation Pdiss,max = f(TS)

Note: In the horizontal part of the derating curve the maximum power dissipation is givenby Pdiss,max ≈ VCE,max * IC,max. In this part, the junction temperature TJ is lower than TJ,max. In thedeclining slope, it is TJ = TJ,max. Pdiss,max has to be reduced according to the curve in order not toexceed TJ,max. It is TJ,max = TS + Pdiss,max * RthJS.


Thermal characteristics

Datasheet 5 v4.02018-09-26

4 Electrical performance in test fixture

4.1 DC parameter table

Table 5 DC characteristics at TA = 25 °C


Collector emitter breakdown voltage V(BR)CEO 6.1 6.6 – V IC = 1 mA, open base

Collector emitter leakage current ICES – 10.1

40 1)

3 1)nAμA

VCE = 8 V, VBE = 0 V,VCE = 18 V, VBE = 0 V,E-B short circuited

Collector base leakage current ICBO 1 40 1) nA VCB = 8 V, IE = 0,open emitter

Emitter base leakage current IEBO – 10 1) μA VEB = 0.5 V, IC = 0,open collector

DC current gain hFE 85 160 230 VCE = 5 V, IC = 90 mA,pulse measured 2)

4.2 AC parameter tables

Table 6 General AC characteristics at TA = 25 °C


Transition frequency fT – 20 – GHz VCE = 5 V, IC = 90 mA

Collector base capacitance CCB 0.37 pF VCB = 5 V, VBE = 0 V,f = 1 MHz,emitter grounded

Collector emitter capacitance CCE 1.4 VCE = 5 V, VBE = 0 V,f = 1 MHz,base grounded

Emitter base capacitance CEB 3.3 VEB = 0.5 V, VCB = 0 V,f = 1 MHz,collector grounded

1 Accuracy is not limited by the device but by the cycle time of the 100% test.2 Test duration 14 ms, duty cycle 46%. Regard that the current gain hFE depends on the junction

temperature TJ and TJ amongst others from the thermal resistance RthSA of the PCB, see notes on Table 3.Hence the hFE specified in this data sheet must not be the same as in the application. It is recommendedto apply circuit design techniques to make the collector current IC independent on the hFE productionvariation and temperature effects.


Electrical performance in test fixture

Datasheet 6 v4.02018-09-26

Measurement setup for the AC characteristics shown in Table 7 to Table 10 is a test fixture with Bias-T’s andtuners to adjust the source and load impedance in a 50 Ω system. TA = 25 °C.

EInput-Tuner

C

B

ZS

Output-Tuner

ZL

Bias-T

DUT

VCC

Bias-T

VBB

In

Out

E

Figure 2 BFP780 testing circuit

Table 7 AC characteristics, VCE = 5 V, f = 900 MHz


Power gainMaximum power gainTransducer gain

Gms|S21|2

– 2721.5

– dBIC = 90 mA

Minimum noise figureMinimum noise figure

NFmin

1.2 IC = 30 mA

Linearity1 dB compression point at output3rd order intercept point at output

OP1dBOIP3

2334.5

dBm ZL = ZL,opt(Pout),IC = 90 mA

Table 8 AC characteristics, VCE = 5 V, f = 1.8 GHz



Gms|S21|2

– 2215

– dBIC = 90 mA


NFmin

1.4 IC = 30 mA


OP1dBOIP3

2234




Datasheet 7 v4.02018-09-26




Gma|S21|2

– 1812

– dBIC = 90 mA


NFmin

1.7 IC = 30 mA


OP1dBOIP3

2234





Gma|S21|2

– 158.5

– dBIC = 90 mA


NFmin

2.4 IC = 30 mA


OP1dBOIP3

2233.5




Datasheet 8 v4.02018-09-26

4.3 Characteristic DC diagrams

0 1 2 3 4 5 6 70

20

40

60

80

100

120

140

160

180

VCE [V]

I C[m

A]

0mA

0.1mA

0.2mA

0.3mA

0.4mA0.5mA0.6mA0.7mA0.8mA0.9mA1mA1.1mA

Figure 3 Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter

Note: Refer to absolute maximum ratings for IC, VCE and Pdiss.

0.1 1 10 100 1000101

102

103

Ic [mA]

h FE

Figure 4 DC Current gain hFE = f(IC), VCE = 5 V



Datasheet 9 v4.02018-09-26

102 103 104 105 106 1076

8

10

12

14

16

18

20

22

24

RBE[Ω]

V(

BR)C

ER.

[V]

102 103 104 105 106 1076

8

10

12

14

16

18

20

22

24

RBE[Ω]

V(

BR)C

ER.

[V]

RBE

BC

E

Figure 5 Collector emitter breakdown voltage V(BR)CER = f(RBE)

Note: The above figure shows the collector-emitter breakdown voltage V(BR)CER with a resistor RBE betweenbase and emitter. Only for very high RBE values ("open base") the breakdown voltage V(BR)CER is as lowas V(BR)CEO (here 6.6 V). With decreasing RBE values V(BR)CER increases, e.g. at RBE = 10 kΩ to V(BR)CEO =10 V. In the application the biasing base resistance together with block capacitors take over thefunction of RBE and allows the RF voltage amplitude to swing up to voltages much higher thanV(BR)CEO, without clipping. Due to this effect the transistor can be biased at VCE = 5 V and still high RFoutput powers achieved, see the OP1dB values reported in Chapter 4.2.



Datasheet 10 v4.02018-09-26

4.4 Characteristic AC diagrams

0 20 40 60 80 100 120 1400

5

10

15

20

25

IC [mA]

f T[G

Hz]

5.00V 4.00V 3.00V 2.00V

Figure 6 Transition frequency fT = f(IC), VCE = parameter

0 20 40 60 80 100 120 140200

300

400

500

600

700

800

IC [mA]

CC

B[fF

]

2.00V

5.00V

4.00V 3.00V

Figure 7 Collector base capacitance CCB = f(IC), f = 1 GHz, VCB = parameter



Datasheet 11 v4.02018-09-26

0 1 2 3 4 5 60

5

10

15

20

25

30

35

40

f [GHz]

G [d

B]

Gms

Gma

|S21|2

Figure 8 Gain Gms, Gma, IS21I2 = f(f), VCE = 5 V, IC = 90 mA

0 20 40 60 80 100 120 14012

14

16

18

20

22

24

26

28

30

32

IC [mA]

Gm

ax[d

B]

0.45GHz

0.90GHz

1.80GHz

2.60GHz

3.50GHz

Figure 9 Maximum power gain Gmax = f(IC), VCE = 5 V, f = parameter



Datasheet 12 v4.02018-09-26

0 1 2 3 4 5 612

14

16

18

20

22

24

26

28

30

32

VCE [V]

G [d

B]

3.50GHz

2.60GHz

1.80GHz

0.90GHz

0.45GHz

Figure 10 Maximum power gain Gmax = f(VCE), IC = 90 mA, f = parameter

10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

−1

1.5

−1.5

2

−2

3

−3

4

−4

5

−5

10

−10

0.5

−0.5

0.1

−0.1

0.2

−0.2

0.3

−0.3

0.4

−0.4

2.0 0.03 to 12 GHz

10.0

0.03

1.0

3.0

4.0

5.06.0 7.0 8.0 9.0

11.012.0

0.03

90mA30mA

Figure 11 Input reflection coefficient S11 = f(f), VCE = 5 V, IC = parameter



Datasheet 13 v4.02018-09-26

10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

−1

1.5

−1.5

2

−2

3

−3

4

−4

5

−5

10

−10

0.5

−0.5

0.1

−0.1

0.2

−0.2

0.3

−0.3

0.4

−0.4

1.0

4.0 0.03 to 12 GHz

2.0

3.0

5.0

6.0

7.0

8.09.0 10.0 11.0 12.0

0.03

90mA30mA

Figure 12 Output reflection coefficient S22 = f(f), VCE = 5 V, IC = parameter

10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

−1

1.5

−1.5

2

−2

3

−3

4

−4

5

−5

10

−10

0.5

−0.5

0.1

−0.1

0.2

−0.2

0.3

−0.3

0.4

−0.4

0.50.91.5

1.8

2.4

3.0

3.5

0.5

0.91.51.8

2.4

3.0

3.5

0.45 to 4 GHz0.45 to 4 GHz

30mA90mA

Figure 13 Source impedance for minimum noise figure ZS,opt = f(f), VCE = 5 V, IC = parameter



Datasheet 14 v4.02018-09-26

0 0.5 1 1.5 2 2.5 3 3.5 40

0.5

1

1.5

2

2.5

3

3.5

4

f [GHz]

NF m

in[d

B]

IC = 30mAIC = 90mA

Figure 14 Noise figure NFmin = f(f), VCE = 5 V, ZS = ZS,opt, IC = parameter

0 20 40 60 80 1000

0.5

1

1.5

2

2.5

3

3.5

4

IC [mA]

NF m

in[d

B]

f = 0.45GHzf = 0.9GHzf = 1.5GHzf = 1.8GHzf = 2.6GHzf = 3.5GHz

Figure 15 Noise figure NFmin = f(IC), VCE = 5 V, ZS = ZS,opt, f = parameter



Datasheet 15 v4.02018-09-26

0 20 40 60 80 1000

1

2

3

4

5

6

IC [mA]

NF 50

[dB]

f = 0.45GHzf = 0.9GHzf = 1.5GHzf = 1.8GHzf = 2.6GHzf = 3.5GHz

Figure 16 Noise figure NF50 = f(IC), VCE = 5 V, ZS = 50 Ω, f = parameter

10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

−1

1.5

−1.5

2

−2

3

−3

4

−4

5

−5

10

−10

0.5

−0.5

0.1

−0.1

0.2

−0.2

0.3

−0.3

0.4

−0.4

23 22.621.7

20.5

19.6

18.817.5

15

Figure 17 Load pull contour OP1dB [dBm], VCE = 5 V, IC = 90 mA, f = 900 MHz



Datasheet 16 v4.02018-09-26

10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

−1

1.5

−1.5

2

−2

3

−3

4

−4

5

−5

10

−10

0.5

−0.5

0.1

−0.1

0.2

−0.2

0.3

−0.3

0.4

−0.4

34.7

34

32.5

31

29.5

27.325

20.5

Figure 18 Load pull contour OIP3 [dBm], VCE = 5 V, IC = 90 mA, f = 900 MHz

−20 −15 −10 −5 0 5 100

20

40

60

80

100

Pin [dBm]

Gai

n [d

B], P

out [

dBm

], PA

E [%

]

Gain

PAE

Pout

IC

60

65

70

75

80

85

I C[m

A]

R1

R2B

C

E

IP1dB

Figure 19 Pout, Gain, IC, PAE = f(Pin), VCE = 5 V, f = 900 MHz, R1 = 270 Ω, R2 = 8 kΩ, ZL = ZL,opt(Pout)

Note: The curves shown in this chapter have been generated using typical devices but shall not beunderstood as a guarantee that all devices have identical characteristic curves. TA = 25 °C.



Datasheet 17 v4.02018-09-26

5 Package information SOT343

ALL DIMENSIONS ARE IN UNITS MMTHE DRAWING IS IN COMPLIANCE WITH ISO 128 &PROJECTION METHOD 1 [ ]

MOLD FLASH, PROTRUSION OR GATE BURRS OF 0.2 MMMAXIMUM PER SIDE ARE NOT INCLUDED

12

43

2±0.2

0.15

0.6-

0.05

0.3-

0.05

1.3

1.25±0.1

0.9±

0.1

0.1MAX

.

0.15

-0.05

0.1 MIN.

2.1±0.1

+0.10

+0.10

+0.10

A

0.1

0.2 A

0.1

3x

0.1

Figure 20 Package outline

Figure 21 Foot print

TYPE CODE

MONTHNOTE OF MANUFACTURER

YEAR

Figure 22 Marking layout example

ALL DIMENSIONS ARE IN UNITS MMTHE DRAWING IS IN COMPLIANCE WITH ISO 128 &PROJECTION METHOD 1 [ ]

4

2

8

2.15

0.2

1.1

2.3

INDEXMARKINGPIN 1

Figure 23 Tape dimensions


Package information SOT343

Datasheet 18 v4.02018-09-26

Revision historyDocumentversion

Date ofrelease

Description of changes

4.0 2018-09-26 New datasheet layout.


Revision history

Datasheet 19 v4.02018-09-26

TrademarksAll referenced product or service names and trademarks are the property of their respective owners.

Edition 2018-09-26Published byInfineon Technologies AG81726 Munich, Germany © 2018 Infineon Technologies AGAll Rights Reserved. Do you have a question about anyaspect of this document?Email: [email protected] Document referenceIFX-ebx1468299694130

IMPORTANT NOTICEThe information given in this document shall in noevent be regarded as a guarantee of conditions orcharacteristics (“Beschaffenheitsgarantie”) .With respect to any examples, hints or any typical valuesstated herein and/or any information regarding theapplication of the product, Infineon Technologieshereby disclaims any and all warranties and liabilities ofany kind, including without limitation warranties ofnon-infringement of intellectual property rights of anythird party.In addition, any information given in this document issubject to customer’s compliance with its obligationsstated in this document and any applicable legalrequirements, norms and standards concerningcustomer’s products and any use of the product ofInfineon Technologies in customer’s applications.The data contained in this document is exclusivelyintended for technically trained staff. It is theresponsibility of customer’s technical departments toevaluate the suitability of the product for the intendedapplication and the completeness of the productinformation given in this document with respect to suchapplication.

WARNINGSDue to technical requirements products may containdangerous substances. For information on the typesin question please contact your nearest InfineonTechnologies office.Except as otherwise explicitly approved by InfineonTechnologies in a written document signed byauthorized representatives of Infineon Technologies,Infineon Technologies’ products may not be used inany applications where a failure of the product orany consequences of the use thereof can reasonablybe expected to result in personal injury

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