BFP420 - Infineon Technologies

BFP420Surface mount wideband silicon NPN RF bipolar transistor

Product descriptionThe BFP420 is a low noise device based on a grounded emitter (SIEGET™) that is part ofInfineon’s established fourth generation RF bipolar transistor family. Its transitionfrequency fT of 25 GHz, high gain and low current characteristics make the devicesuitable for oscillators up to 10 GHz. It remains cost competitive without compromisingon ease of use.

Feature list• Minimum noise figure NFmin = 1.1 dB at 1.8 GHz, 2 V, 5 mA• High gain Gms = 21 dB at 1.8 GHz, 2 V, 20 mA• OIP3 = 22 dBm at 1.8 GHz, 2 V, 20 mA

Product validationQualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Potential applications• Radio-frequency oscillators• Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio• LNAs for sub-1 GHz ISM band applications

Device informationProduct name / Ordering code Package Pin configuration Marking Pieces / ReelBFP420 / BFP420H6327XTSA1 SOT343 1 = B 2 = E 3 = C 4 = E AMs 3000

BFP420 / BFP420H6433XTMA1 10000

Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions

Datasheet Please read the Important Notice and Warnings at the end of this document Revision 2.0www.infineon.com 2019-01-25

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Table of contents

Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63.1 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63.2 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63.3 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .73.4 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.5 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4 Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18


Table of contents

Datasheet 2 Revision 2.02019-01-25

1 Absolute maximum ratings

Table 1 Absolute maximum ratings at TA = 25 °C (unless otherwise specified)

Parameter Symbol Values Unit Note or test conditionMin. Max.

Collector emitter voltage VCEO – 4.5 V Open base

4.1 TA = -55 °C, open base

Collector emitter voltage VCES 15 E-B short circuited

Collector base voltage VCBO 15 Open emitter

Emitter base voltage VEBO 1.5 Open collector

Base current IB 9 mA –

Collector current IC 60

Total power dissipation 1) Ptot 210 mW TS ≤ 98 °C

Junction temperature TJ 150 °C –

Storage temperature TStg -55

Attention: Stresses above the max. values listed here may cause permanent damage to the device.Exposure to absolute maximum rating conditions for extended periods may affect devicereliability. Exceeding only one of these values may cause irreversible damage to the integratedcircuit.

1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB.


Absolute maximum ratings


2 Thermal characteristics

Table 2 Thermal resistance

Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.

Junction - soldering point RthJS – 250 – K/W –

0 25 50 75 100 125 1500

20

40

60

80

100

120

140

160

180

200

220

240

260

TS[°C]

P tot[m

W]

Figure 1 Total power dissipation Ptot = f(TS)


Thermal characteristics


tp

Rth

JS

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s10 -1 10 010 1

K/W

10 2

10 3

D = 00.0050.010.020.050.10.20.5

Figure 2 Permissible pulse load RthJS = f(tp)

tp

Pto

tmax

/Pto

tDC

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s10 -1 10 0

-

10 0

10 1

D = 00.0050.010.020.050.10.20.5

Figure 3 Permissible pulse load Ptot,max / Ptot,DC = f(tp)


Thermal characteristics


3 Electrical characteristics

3.1 DC characteristics

Table 3 DC characteristics at TA = 25 °C


Collector emitter breakdown voltage V(BR)CEO 4.5 5 – V IC = 1 mA, IB = 0,open base

Collector emitter leakage current ICES – – 10 2) μA VCE = 15 V, VBE = 0,E-B short circuited

Collector base leakage current ICBO 100 2) nA VCB = 5 V, IE = 0,open emitter

Emitter base leakage current IEBO 3 2) μA VEB = 0.5 V, IC = 0,open collector

DC current gain hFE 60 95 130 VCE = 4 V, IC = 20 mA,pulse measured

3.2 General AC characteristics

Table 4 General AC characteristics at TA = 25 °C


Transition frequency fT 18 25 – GHz VCE = 3 V, IC = 30 mA,f = 2 GHz

Collector base capacitance CCB – 0.15 0.3 pF VCB = 2 V, VBE = 0,f = 1 MHz,emitter grounded

Collector emitter capacitance CCE 0.37 – VCE = 2 V, VBE = 0,f = 1 MHz,base grounded

Emitter base capacitance CEB 0.55 VEB = 0.5 V, VCB = 0,f = 1 MHz,collector grounded

2 Maximum values not limited by the device but by the short cycle time of the 100% test.


Electrical characteristics


3.3 Frequency dependent AC characteristics

Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C.

OUT

IN

Bias-T

Bias-TB

(Pin 1)

E C

E

VCTop View

VB

Figure 4 Testing circuit

Table 5 AC characteristics, VCE = 2 V, f = 1.8 GHz


Power gain• Maximum power gain• Transducer gain

Gms|S21|2

–14

2117

– dBIC = 20 mA

Noise figure• Minimum noise figure NFmin

–1.1 IC = 5 mA

Linearity• 3rd order intercept point at output• 1 dB gain compression point at output

OIP3OP1dB

2212

dBmIC = 20 mA, ZS = ZL = 50 Ω

Note: Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated inthis chapter, the test fixture losses have been subtracted from all measured results. OIP3 valuedepends on termination of all intermodulation frequency components. Termination used for thismeasurement is 50 Ω from 0.1 MHz to 6 GHz.




3.4 Characteristic DC diagrams

0 1 2 3 4 5 60

5

10

15

20

25

30

35

40

45

50

55

60

65

I B= 25µA

I B= 75µAI B= 125µAI B= 175µAI B= 225µAI B= 275µAI B= 325µAI B= 375µAI B= 425µAI B= 475µAI B= 525µAI B= 575µAI B= 625µAI B= 675µAI B= 725µA

VCE[V]

I C[m

A]

Figure 5 Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter

10−1 100 101 102101

102

IC[mA]

h FE

Figure 6 DC current gain hFE = f(IC), VCE = 3 V




0.5 0.6 0.7 0.8 0.9 110−5

10−4

10−3

10−2

10−1

100

101

102

VBE[V]

I C[m

A]

Figure 7 Collector current vs. base emitter forward voltage IC = f(VBE), VCE = 3 V

0.5 0.6 0.7 0.8 0.9 110−7

10−6

10−5

10−4

10−3

10−2

10−1

100

VBE[V]

I B[mA]

Figure 8 Base current vs. base emitter forward voltage IB = f(VBE), VCE = 3 V




0.3 0.5 0.7 0.9 1.1 1.3 1.510−11

10−10

10−9

10−8

10−7

10−6

VEB[V]

I B[A]

Figure 9 Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 3 V

104 105 106 1075

5.5

6

6.5

7

7.5

8

RBE [ ]

V CER

[V]

RBE

B

C

E

Ω

Figure 10 Collector emitter breakdown voltage VCER = f(RBE), IC = 1 mA




3.5 Characteristic AC diagrams

IC

f T

0 5 10 15 20 25 30 mA 400

4

8

12

16

20

24

GHz

30

2 to 41.5

1

0.75

0.5

Figure 11 Transition frequency fT = f(IC), f = 2 GHz, VCE = parameter

VCB

Ccb

0 1 2 V 40

0.05

0.1

0.15

0.2

pF

0.3

Figure 12 Collector base capacitance CCB = f(VCB), f = 1 MHz




0 1 2 3 4 5 60

4

8

12

16

20

24

28

32

36

40

44

f [GHz]

G [d

B]

Gms

Gma

|S21

|2

Figure 13 Gain Gma, Gms, IS21I2 = f(f), VCE = 2 V, IC = 20 mA

IC

0 4 8 12 16 20 24 28 32 mA 400

4

8

12

16

20

24

dB

30

0.9

1.8

2.4

3

4

5

6

G

Figure 14 Maximum power gain Gmax = f(IC), VCE = 2 V, f = parameter in GHz




VCE

G

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V 4.50

4

8

12

16

20

24

dB

30

0.9

1.8

2.4

3

4

5

6

Figure 15 Maximum power gain Gmax = f(VCE), IC = 20 mA, f = parameter in GHz

100

+j10

-j10

50

+j25

-j25

25

+j50

-j50

10

+j100

-j100

03GHz

4GHz

5GHz

0.45GHz

0.9GHz

1.8GHz2.4GHz

6GHz

5 mA

20 mA

Figure 16 Source impedance for minimum noise figure ZS,opt = f(f), VCE = 2 V, IC = 5 / 20 mA




0 1 2 3 4 GHz 6

f

0

0.5

1

1.5

2

dB

3

F

IC = 20 mA IC = 5 mA

Figure 17 Noise figure NFmin = f(f), VCE = 2 V, ZS = ZS,opt, IC = 5 / 20 mA

IC

F

0 4 8 12 16 20 24 28 32 mA 380

1.0

2.0

3.0

dB

4.0

f = 0.9 GHzf = 1.8 GHzf = 2.4 GHzf = 3 GHzf = 4 GHzf = 5 GHzf = 6 GHz

Figure 18 Noise figure NFmin = f(IC), VCE = 2 V, ZS = ZS,opt, f = parameter in GHz




I C

F

0 4 8 12 16 20 24 28 32 mA 360

0.5

1.0

1.5

2.0

dB

3.0

ZS = ZSoptZS = 50 Ohm

Figure 19 Noise figure NFmin = f(IC), ZS = ZS,opt, NF50 = f(IC), ZS = 50 Ω, VCE = 2 V, f = 1.8 GHz

Note: The curves shown in this chapter have been generated using typical devices but shall not beconsidered as a guarantee that all devices have identical characteristic curves. TA = 25 °C.




4 Package information SOT343

ALL DIMENSIONS ARE IN UNITS MMTHE DRAWING IS IN COMPLIANCE WITH ISO 128 &PROJECTION METHOD 1 [ ]

MOLD FLASH, PROTRUSION OR GATE BURRS OF 0.2 MMMAXIMUM PER SIDE ARE NOT INCLUDED

12

43

2±0.2

0.15

0.6-

0.05

0.3-

0.05

1.3

1.25±0.1

0.9±

0.1

0.1MAX

.

0.15

-0.05

0.1 MIN.

2.1±0.1

+0.10

+0.10

+0.10

A

0.1

0.2 A

0.1

3x

0.1

Figure 20 Package outline

Figure 21 Foot print

TYPE CODE

MONTHNOTE OF MANUFACTURER

YEAR

Figure 22 Marking layout example

ALL DIMENSIONS ARE IN UNITS MMTHE DRAWING IS IN COMPLIANCE WITH ISO 128 &PROJECTION METHOD 1 [ ]

4

2

8

2.15

0.2

1.1

2.3

INDEXMARKINGPIN 1

Figure 23 Tape dimensions


Package information SOT343


Revision historyDocumentversion

Date ofrelease

Description of changes

Revision 2.0 2019-01-25 New datasheet layout, typical DC curves added.


Revision history


TrademarksAll referenced product or service names and trademarks are the property of their respective owners.

Edition 2019-01-25Published byInfineon Technologies AG81726 Munich, Germany © 2019 Infineon Technologies AGAll Rights Reserved. Do you have a question about anyaspect of this document?Email: [email protected] Document referenceIFX-ikw1524056005786

IMPORTANT NOTICEThe information given in this document shall in noevent be regarded as a guarantee of conditions orcharacteristics (“Beschaffenheitsgarantie”) .With respect to any examples, hints or any typical valuesstated herein and/or any information regarding theapplication of the product, Infineon Technologieshereby disclaims any and all warranties and liabilities ofany kind, including without limitation warranties ofnon-infringement of intellectual property rights of anythird party.In addition, any information given in this document issubject to customer’s compliance with its obligationsstated in this document and any applicable legalrequirements, norms and standards concerningcustomer’s products and any use of the product ofInfineon Technologies in customer’s applications.The data contained in this document is exclusivelyintended for technically trained staff. It is theresponsibility of customer’s technical departments toevaluate the suitability of the product for the intendedapplication and the completeness of the productinformation given in this document with respect to suchapplication.

WARNINGSDue to technical requirements products may containdangerous substances. For information on the typesin question please contact your nearest InfineonTechnologies office.Except as otherwise explicitly approved by InfineonTechnologies in a written document signed byauthorized representatives of Infineon Technologies,Infineon Technologies’ products may not be used inany applications where a failure of the product orany consequences of the use thereof can reasonablybe expected to result in personal injury

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