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Synthesis and Applications of Synthesis and Applications of Semiconductor NanowiresSemiconductor Nanowires
•Group 17•余承曄•F90943055
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Nanoelectronics
OutlineOutline
Synthesis of semiconductor nanowires Electrical device Optical device Nanowire sensor
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Laser-assisted Catalytic Growth (LCG)Laser-assisted Catalytic Growth (LCG)
Growth system :
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Nd-yttrium-aluminum-garnet laser (wavelength, 532 nm)
Nanoelectronics
Laser-assisted Catalytic Growth (LCG)Laser-assisted Catalytic Growth (LCG)
Growth mechanism :
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Vapor-liquid-solid (VLS) growth modelCatalyst : Fe, Ni, Au, …Catalyst : Fe, Ni, Au, …
Nanoelectronics
Si nanowires :
Laser-assisted Catalytic Growth Laser-assisted Catalytic Growth (LCG)(LCG)
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Scale bar:100nm Scale bar:10nm
Nanoelectronics
Laser-assisted Catalytic Growth Laser-assisted Catalytic Growth (LCG)(LCG)
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Ge nanowires :
Scale bar:9nm Scale bar:5nm
Nanoelectronics
Nanowire diameter control
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SiNW diameters grown from 5-, 10-, 20-, and 30-nm-diam Au nanoclusters.
Solution-liquid-solid (SLS) Synthesis
Growth of InP, InAs, and GaAs (III-V)
Low-temperature ( ~203°C)
Potential limitation： catalyst must melt below the solvent boiling point
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Thermal evaporation method
Experimental apparatus:
(1) furnace; (2) quartz tube; (3) quartz cover; (4) ceramic boat; (5) pure silicon
powder; (6) iron-patterned
silicon substrate.RTO
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Thermal evaporation method
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Pre-patterned Fe on the growth surface No laser need
Template-assisted Synthesis
Process flow for preparing ordered nanowires with a template
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Template-assisted Synthesis
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low-temperature VLS method
using low-melting-point metals, such as Ga, In, and Bi, as the solvent
SiHx(g)+xH(g) Ga-Si(l)+xH2(g)
Ga–Si alloy is possible at temperatures as low as 100 °C.
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Ga
low-temperature VLS method
nanowires with uniform diameters distributed around 6 nm using gallium as the molten solvent, at temperatures less than 400 °C in hydrogen plasma
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Nanowire superlattice
•Upon completion of the first growth step, a different material (red) can be grown from the end of the nanowire.•Repetition of steps leads to a compositional superlattice within a single nanowire.
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Nanowire superlattice
GaAs/GaP nanowire junctions
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Scale bar:10nmAbrupt junction : Nanowire diameterCatalystGrowth temperature
Nanowire superlattice
a 40-nm-diameter GaP(5)/GaAs(5)/GaP(5)/GaAs(5)/GaP(10)/GaAs(5)/GaP(20)/GaAs(5)/GaP(40)/GaAs(5)/GaP(5) superlattice RTO
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Junction devices
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Bipolar Transistor
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Invertors
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PN junction & FETs
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Nano-logic gates
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Nanowire Computation
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Nanowire LEDs
InP LED
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Nanoelectronics
Nanowire LEDs
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65(n)+68(p)nmPeak at 820nm
39(n)+49(p)nmPeak at 680nm
Bulk bandgap of InP :925nm
Nanowire Sensor for PH Detection
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Real-time detection of protein binding
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Real-time detection of reversible protein binding
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Nanoelectronics
Real-time Detection of Ca2+ Ions
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References
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1. A. M. Morales and C. M. Lieber, Science 279, 210 (1998).
2. M. S. Gudiksen et al., Nature 415, 617 (2002).
3. B. H. Hong et al., Science 294, 348 (2001).
4. T. Thurn-Albrecht et al., Science 290, 2126 (2000)
5. A. J. Yin et al., Applied Physics Letters 79, 1039 (2001).
6. M. Paulose et al., Applied Physics Letters 81, 153 (2002).
7. Y. Cui and C. M. Lieber, Science 291, 851 (2001).
8. Y. Huang et al., Science 294, 1313 (2001).
9. Y. Cui et al., Science 293, 1289 (2001).
References
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10. M. K. Sunkara et al., Applied Physics Letters 79, 1546 (2001).
11. T. J. Trentlor et al., Science 270, 1791 (1995)
12. Yi Cui et al., Applied Physics Letters 78, 2214 (2001).
13. Z. H. Wu et al., Applied Physics Letters 81, 5177 (2002).
14. Qian Gu et al., Applied Physics Letters 76, 3020 (2000).
