Photoresists For Plating & Etching Applications - Metal plating - Plasma etching - Enhanced adhesion to copper - Two functional groups to miximize adhesion to copper and copper oxide - Enhanced adhesion to gold Applications - Solder bump plating Copper pillar plating Gold bump plating Copper redistribution plating Properties - Positive tone thick ﬁlm photo resist Cover >50μm thick at ‘Single Coating’ Chemically ampliﬁed type: High sensitivity Straight wall angle pattern Good Plating bath resistance Easy to remove by safe solvent R 2 S Si O R 2 S Si O R 2 S Si O R 2 S Si O R 2 S Si O R 2 S Si O R 2 S Si O R 2 S Si O Au Au Au Au Au Au Au Au Au Substrate Photoresist R 1 A Si O R 1 S A Cu CuO Cu Cu CuO Cu R 1 A Si O R 1 S A Post Photoresist Coating Post Photoresist Coating SIPR-9740 on Copper With and Without PR1P Photoresist Cu Substrate SIPR-3251 - i-line and broadband sensitive - Positive tone - Novalak-based - 30μm in a single coat - TMAH-developable - Excellent plating resistance - Easily stripped - Custom viscosities available 1.5μm L/S FT = 6μm 465 mJ/cm Adhesion Promoters SIPR-7500 Series Photoresists SIPR-3251 Photoresist PR20P PR1P PR1P Blank (No Primer) 625mJ 550mJ SIPR-9740-6.0 3μmL/S SIPR-9740-6.0 3μmL/S SIPR-9740-6.0 3μmL/S SIPR-9740-6.0 3μmL/S SIPR-9740-6.0 3μmL/S SIPR-9740-6.0 3μmL/S 475mJ Photoresist Materials Metal Adhesion Promoters Adhesion Promoters HMDS MicroPrime HP Primer HMDS MicroPrime HP Primer (CH 3 ) 3 SiNHSi H 3 ) 3 Ultra- High Purity Grade HDMS Photoresist Adhesion Promoter MicroPrime MP-90 & 95 HMDS/DEATS Blend MicroPrime P10 & P20 PGMEA/HMDS Blend Lithographic Performance at High / FT = 40μm Resistance against Plating Solution Cu Plating Performance of SINR-7500W Resist Film Thickness; 60um Via Size; 60um Exposure; Proximity Aligner Resist strip : PGMEA Dipping Sn-Ag Solder plating solution TS-202 (ISHIHARA Chemical) Condition; 30ºC / Dipping Resist Film Thickness; 70um Via Size; 60um Exposure; Proximity Aligner Before dipping Dipped for 120 min. No Cracks Conditions; FT ; 40um, Substrate; Si, SB = 130ºC x 120sec., Exposure; NSR-i11 (Nikon) NA = 0.46,σ = 0.38, PEB = 120ºC x 120sec., Dev.; 2.38% TMAH aq., 60sec. Puddle x 6 Times 10.0um L/S 800mJ Focus; 0.0um (Large Size Image) -4.0um -3.0um -2.0um -1.0um 0.0um +1.0um +2.0um +3.0um +4.0um Optical Scope CS SEM CS SEM

photoresist SPIE 2013 · 2015. 8. 5. · Photoresists For Plating & Etching Applications - Metal plating - Plasma etching - Enhanced adhesion to copper - Two functional groups to

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Photoresists For Plating & Etching

Applications - Metal plating - Plasma etching

- Enhanced adhesion to copper - Two functional groups to miximize adhesion to copper and copper oxide

- Enhanced adhesion to gold

Applications - Solder bump plating Copper pillar plating Gold bump plating Copper redistribution plating Properties - Positive tone thick �lm photo resist Cover >50µm thick at ‘Single Coating’ Chemically ampli�ed type: High sensitivity Straight wall angle pattern Good Plating bath resistance Easy to remove by safe solvent

SiO

Au Au AuAuAuAuAuAu Au Substrate

Photoresist

SiO

Cu CuO CuCuCuOCu

SiO

Post Photoresist Coating

SIPR-9740 on CopperWith and Without PR1P

Photoresist

Cu Substrate

1.5µm L/SFT = 6µm

465 mJ/cm2

1.5µm L/SFT = 6µm

465 mJ/cm2

SIPR-3251 - i-line and broadband sensitive - Positive tone - Novalak-based - 30µm in a single coat - TMAH-developable - Excellent plating resistance - Easily stripped - Custom viscosities available

1.5µm L/SFT = 6µm

465 mJ/cm

Adhesion Promoters

SIPR-7500 Series Photoresists

SIPR-3251 Photoresist

PR20PPR1P

PR1P

Blank(No Primer)

625mJ550mJ

SIPR-9740-6.0 3µmL/S SIPR-9740-6.0 3µmL/S

SIPR-9740-6.0 3µmL/SSIPR-9740-6.0 3µmL/S SIPR-9740-6.0 3µmL/S

SIPR-9740-6.0 3µmL/S

475mJ

Photoresist Materials

Metal Adhesion Promoters

Adhesion Promoters HMDS

MicroPrime HP Primer HMDS

MicroPrime HP Primer (CH3)

3SiNHSi H 3) 3 Ultra- High Purity Grade HDMS Photoresist Adhesion Promoter

MicroPrime MP-90 & 95 HMDS/DEATS Blend

MicroPrime P10 & P20 PGMEA/HMDS Blend

Lithographic Performance at High / FT = 40µm

Resistance against Plating Solution

Cu Plating Performance of SINR-7500W

Resist Film Thickness; 60umVia Size; 60umExposure; Proximity AlignerResist strip : PGMEA Dipping

Sn-Ag Solder plating solutionTS-202 (ISHIHARA Chemical)Condition; 30ºC / Dipping

Resist Film Thickness; 70umVia Size; 60umExposure; Proximity Aligner

Before dipping

Dipped for 120 min.

No Cracks

Conditions; FT ; 40um, Substrate; Si, SB = 130ºC x 120sec., Exposure; NSR-i11 (Nikon)NA = 0.46,σ = 0.38, PEB = 120ºC x 120sec., Dev.; 2.38% TMAH aq., 60sec. Puddle x 6 Times10.0um L/S 800mJ

Focus; 0.0um(Large Size Image)

-4.0um -3.0um -2.0um -1.0um 0.0um +1.0um +2.0um +3.0um +4.0um

Optical Scope CS SEM CS SEM