Photoresists For Plating & Etching

Applications - Metal plating - Plasma etching

- Enhanced adhesion to copper - Two functional groups to miximize adhesion to copper and copper oxide

- Enhanced adhesion to gold

Applications - Solder bump plating Copper pillar plating Gold bump plating Copper redistribution plating Properties - Positive tone thick �lm photo resist Cover >50µm thick at ‘Single Coating’ Chemically ampli�ed type: High sensitivity Straight wall angle pattern Good Plating bath resistance Easy to remove by safe solvent

R2

S

SiO

R2

S

SiO

R2

S

SiO

R2

S

SiO

R2

S

SiO

R2

S

SiO

R2

S

SiO

R2

S

SiO

Au Au AuAuAuAuAuAu Au Substrate

Photoresist

R1

A

SiO

R1

S

A

Cu CuO CuCuCuOCu

R1

A

SiO

R1

S

A

Post Photoresist Coating

Post Photoresist Coating

SIPR-9740 on CopperWith and Without PR1P

Photoresist

Cu Substrate

1.5µm L/SFT = 6µm

465 mJ/cm2

1.5µm L/SFT = 6µm

465 mJ/cm2

SIPR-3251 - i-line and broadband sensitive - Positive tone - Novalak-based - 30µm in a single coat - TMAH-developable - Excellent plating resistance - Easily stripped - Custom viscosities available

1.5µm L/SFT = 6µm

465 mJ/cm

Adhesion Promoters

SIPR-7500 Series Photoresists

SIPR-3251 Photoresist

PR20PPR1P

PR1P

Blank(No Primer)

625mJ550mJ

SIPR-9740-6.0 3µmL/S SIPR-9740-6.0 3µmL/S

SIPR-9740-6.0 3µmL/SSIPR-9740-6.0 3µmL/S SIPR-9740-6.0 3µmL/S

SIPR-9740-6.0 3µmL/S

475mJ

Photoresist Materials

Metal Adhesion Promoters

Adhesion Promoters HMDS

MicroPrime HP Primer HMDS

MicroPrime HP Primer (CH3)

3SiNHSi H 3) 3 Ultra- High Purity Grade HDMS Photoresist Adhesion Promoter

MicroPrime MP-90 & 95 HMDS/DEATS Blend

MicroPrime P10 & P20 PGMEA/HMDS Blend

Lithographic Performance at High / FT = 40µm

Resistance against Plating Solution

Cu Plating Performance of SINR-7500W

Resist Film Thickness; 60umVia Size; 60umExposure; Proximity AlignerResist strip : PGMEA Dipping

Sn-Ag Solder plating solutionTS-202 (ISHIHARA Chemical)Condition; 30ºC / Dipping

Resist Film Thickness; 70umVia Size; 60umExposure; Proximity Aligner

Before dipping

Dipped for 120 min.

No Cracks

Conditions; FT ; 40um, Substrate; Si, SB = 130ºC x 120sec., Exposure; NSR-i11 (Nikon)NA = 0.46,σ = 0.38, PEB = 120ºC x 120sec., Dev.; 2.38% TMAH aq., 60sec. Puddle x 6 Times10.0um L/S 800mJ

Focus; 0.0um(Large Size Image)

-4.0um -3.0um -2.0um -1.0um 0.0um +1.0um +2.0um +3.0um +4.0um

Optical Scope CS SEM CS SEM