Lyon Institute ofleti.congres-scientifique.com/annualreview2009/... · 24/06/2009 inl.cnrs.fr LETI seeding research within the MINATEC partnership Wednesday, June 24th 2009 NANOLYON

Lyon Institute of Nanotechnology

LETI seeding research within the MINATEC partnershipWednesday, June 24th 2009

UMR 5270

24/06/2009

inl.cnrs.fr


Outline

INL presentationHistoryMain INL-LETI projectsProspective

24/06/2009

inl.cnrs.fr


Lyon Institute of nanotechnology : Key figures

Ecolecentrale de Lyon (ECL)

UMR 5270 CNRS ECL INSA UCBLCreated on january 2007Director : Guy Hollinger

~215 People22 CNRS researchers59 professors37 technical administrative staff14 Postdocs83 PhD students

Key figures• 100 publications / year• 120 conferences / year• Budget : 3.5 M€ without salaries

University of Lyon (UCBL)

Institut National des sciences

appliquées (INSA)

24/06/2009

inl.cnrs.fr


INL Research areas

NANOLYONTechnology platform

BiotechnologyBiotechnologyHealthHealth

PhotonicsPhotonicsPhotovoltaicsPhotovoltaics

FunctionnalFunctionnalMaterialsMaterials

ElectronicsElectronics

Informationtechnology

BiologyHealth

Energy

24/06/2009

inl.cnrs.fr


NANOLYON Technology platform

Key figures– 200 m2 clean room, 300 m2 technology areas– Facility investment : equivalent of 8 M€ .– 10 Techn. staff, 30 researchers – 30/40 pstdocs/PhD students– Annual Budget : 500 K€

Technologies available : standard and advanced– III-V optoelectronics /photonics– Si photovoltaics– Si, SiC processes, functional oxides– Polymers, organics (OLED/OFET)– Biotechnologies : biochips, biosensors,…

24/06/2009

inl.cnrs.fr


Materials

Nanostructuration of materials by electrochemical anodisationNanostructuration of Si (porous) and SiC; quantum nanostructures.

Epitaxial nanostructuresIII-V quantum dots and wires Semiconductive nanostructures (Si, Ge, III-V) in wide bandgap oxide matricesSurface nanostructuration for site control

Monolithic integration on silicon and pseudo-substratesEpitaxy of high k oxides on siliconMonolithic integration of semiconductors (Si, Ge, III-V) on Si via epitaxial oxide layersCompliant pseudo-substrates for heteroepitaxy

Physical studiesNear field probes (AFM, SNOM, …)Spectroscopy of single quantum dots, nanocrystals and ultra-thin layers – local spectroscopySIMS physics and application to ultra-thin layersTEM characterization 0,83 0,84

30µW6µW

0.6µW

X

PL (u

.a.)

Energie (eV)

x10

2X

2µW

T=8K

24/06/2009

inl.cnrs.fr


Electronics

Silicon-based nanodevices• CMOS devices: characterisation and modelling• Post-CMOS devices: design, production, characterisation• RTD, SETs, SEMs, NW devices• MEMS/NEMS• Development of quantum simulation tools f

Nano-electronic circuits• DGMOS-based circuits and logic functions• Carbon nanotube-based structures and circuits• Compact mono-electronic device models

Heterogeneous micro-electronic design• Heterogeneous SoC design methods and models• Exploration of communication architectures • Sensor-related electronic function design

VbAA VbB B

EV1

PC1 EV2

PC2

VbC

Vdd

Y

C

LogicFunction

Inverteror

Follower

Cellule reconf. à 8-Fonct

VbAA VbB B

EV1

PC1 EV2

PC2

VbC

Vdd

Y

C

VbAA VbB B

EV1

PC1 EV2

PC2

VbC

Vdd

Y

C

LogicFunction

Inverteror

Follower

Cellule reconf. à 8-Fonct

24/06/2009

inl.cnrs.fr


Photonics - Photovoltaics

Photonic crystals• “Ultimate” or small-photon-number active nanophotonicdevices • Near-field analysis and engineering on photonic crystals. • Surface wave photonics on nanostructured silicon

Nanophotonic integration• Multi-level photonic circuits• Heterogeneous III-V / Si integration. • Refractive/diffractive optic coupling

III-V MOEMS• Integrated MOEMS-based microspectrometer. • 2.5D MOEMS.

Photovoltaics1st, 2nd, third generation Silicon based solar cellsTransfer of thin layers onto low-cost substrateActive dielectricsNanomaterials for photovoltaic cellsRear-face interdigital contact cells

QD QD emitteremitter

Top SiTop Si--QD QD cellcell((EgEg = 2 eV)= 2 eV)

Middle SiMiddle Si--QD QD cellcell((EgEg = 1.5 eV)= 1.5 eV)

UnconfinedUnconfined Si Si cellcell((EgEg = 1.1 eV)= 1.1 eV)

QD QD junctionjunction

QD QD junctionjunction

24/06/2009

inl.cnrs.fr


Biotechnology Health

Bottom up NanotechnologiesNanoChemistry and NanobiotechnologyMolecular nanoassembly; Fluid/surface interactions in microfluidics; Peptide/protein recognition on solid support; Functionalised nanobearings and nanocrystals; Near-field microscopy of biological objects.

Integrated nanobiodevices• Lab-on-chip diagnostic analyser; • Biochips: DNA , protein, saccharide, etc.; • Organic sensors (field-effect transistors);

Biomedical MicrosensorsMicrosensors: non-invasive, active, “smart", autonomousSmart clothingWristlet micrometers for ambulatory and outpatient monitoringSmart dwellings using “exosensors”

24/06/2009

inl.cnrs.fr


LETI – INL : Some History

1999 – 2005 : Plato / CPMA – Access to LETI « PLATO » integration platform to develop :

– III-V photonics on Si (ECL + INSA)– Nanoelectronics (INSA) : New nanocrystal based devices

Several national / regional projects

2005 – present/future : European and National projects– Photonics on CMOS : FP6 PICMOS, Epixnet, FP7 Wadimos, Helios, …

– Design of heteregeneous systems : several ANR projects , Catrene 2008 3DIM

– Caracterization of materials and devices : ANR, Rhone-Alpes projects

Future : Extension towards new projects….– Heterogeneous integration of new materials on silicon– Photovoltaics : nanophotonics concepts in solar cells– Sensors and smart clothing (FP6 PROETEX + new projects with Eric McAdams Group

24/06/2009

inl.cnrs.fr


Photonics on CMOSX. Letartre et al

See R. Orobtchouk talk

24/06/2009

inl.cnrs.fr


Microlasers, photonics on CMOS

Suspended InP PhC mirror

Silicon

SilicaSi microguide

III-V active region (QWs)

Si PhC mirror

Microdisk lasers

Photonic Crystal lasers

Design, III-V technology, characterization in LyonIntegration on 200 mm wafers at LETI

2μm

SOI waveguideIII-V microdisk

laser

IMEC/ LETI / INL

(2006)

24/06/2009

inl.cnrs.fr


Toward optical networks

Optimize NxN optical network on chip topology to adapt to specific communication requirements

I3/Rxλ5λ5

λ1λ1

λ2λ2λ3λ3I2/Tx

I1/Tx

I3/Tx

T1/Tx

T2/Tx

I4/Tx

I6/Tx

I5/Tx

λ1λ1

λ2λ2λ3λ3

λ6λ6

λ7λ7

I1/Rx

I2/Rx

T2/Rx

T1/Rx

I5/Rx

I6/Rx

I4/Rxλ5λ5λ6λ6

λ7λ7

FP7-WADIMOSWavelength Division Multiplexed

Photonic Layer on CMOS

Si Photonic integrated circuitsACI Nanosciences 2002 « Lambdaconnect »

Design, III-V technology, characterization in LyonIntegration on 200 mm wafers at LETI

24/06/2009

inl.cnrs.fr


Design of heterogeneous systemsIan O’Connor et al.

24/06/2009

inl.cnrs.fr


Reconfigurable nanoprocessors

clk

Dm

D2

D1

D2

clk

DmC2b Cmb

F

C2a

Cma

carbonnanotube FET

double-gateSOI MOSFET

PATENT

multiple channelnanowire FET

long term aims:develop nanoprocessors with orders of magnitude improvements in- # operations / µm3.s.W- flexibility- fault tolerance

nonlinearoptical device ...

- nanodevice based logic gate designs- specific nanodevice properties- radically new functionalities

ANR 2008 ARPEGE NANOGRAINCoordinator : F. ClermidyLETI, INL, IMS

ANR 2005 PNANO MultigrillesCoordinator : O. RozeauLETI, L2MP, ISEP, IMEP, INL, ST

carbonnanotube FET

double-gateSOI MOSFET

inl.cnrs.fr


Heterogeneous modeling & design methods

ANR 2008 PNANO 3D-IDEASCoordinator : Ian O’Connor (INL)Partners : INL, IMEP-LAHC, InESS, ST, LETI

3-tier 3D Imager

CATRENE 2008 3DIM3Coordinator : Ian O’Connor (INL)

Partners : ST, NXP, Cadence, CEA-LETI, FRAUNHOFER, TIMA, INL

RF1 RF2

Base Band

Computing

Passive

RF3

Interconnect

eRAM

DDRDRAM

µCTRL DSP

I/OPower

Sens

ors eRAM µCTRL DSP

DDR I/ODRAM

M3 design: RF + Compute + Baseband + Sensors …

Classical solution

Board

EnergyRFMEMS/NEMSAnalogMemoryProcessor

CPU

Cache Memory

DRAM / NVM

Analog

RF Power

Sensor I/O

Sensor I/O

System Re-architecture and partitioning3DIM3 WP 3,4,5

3D Design and Packaging 3DIM3 WP 1,2,6

(SoC/SIP)

RF1 RF2

Base Band

Computing

Passive

RF3

Interconnect

eRAM

DDRDRAM

µCTRL DSP

I/OPower

Sens

ors eRAM µCTRL DSP

DDR I/ODRAM

M3 design: RF + Compute + Baseband + Sensors …

Classical solution

Board




CPU

Cache Memory

DRAM / NVM

Analog

RF Power

Sensor I/O

Sensor I/O

CPU

Cache Memory

DRAM / NVM

Analog

RF Power

Sensor I/O

Sensor I/O

System Re-architecture and partitioning3DIM3 WP 3,4,5

3D Design and Packaging 3DIM3 WP 1,2,6

(SoC/SIP)

24/06/2009

inl.cnrs.fr


Characterization

24/06/2009

inl.cnrs.fr


0.75 0.78 0.81 0.84 0.87 0.90 0.93 0.96 0.99 1.02

Inte

nsité

de

PL (u

.a.)

Energie (eV)

40 %

30 %

20 %

0.88

0.93

0.99

Si contraint (9 nm)

Strain dependence of indirect band gap for strained silicon on insulator wafers (SSOI)

MunguiaMunguia et al. APL 93 (2008) 102101.et al. APL 93 (2008) 102101.

90 nm

90 nm

zoom 0.5 µm

Scan 2.5 µm

Piezoresponse Force Microscopy (PFM)A tool for the nanoscale characterization offerroelectric thin films

Characterization of new materials and devices

• Near field: morphologic, electrical mode AFM (SCM, TUNA, PFM, …)• Optical: SNOM, (nano) photoreflection, photoluminescence• Electro-optics: electroluminescence, DLTS, charge pumping, modulation spectroscopy

Thesis, ANR and Région Rhône Alpes projects

24/06/2009

inl.cnrs.fr


Prospective

24/06/2009

inl.cnrs.fr


Nanophotonics and Photovoltaics

Cellules Si à cristaux photoniques Cellules Si à électrode nanostructurée

Absorption : +50% jusqu’à 85%Acceptance angulaire deux fois meilleure

sur tout le spectre

Surface plasmons+

Photonic crystals

2nd generation Objective : Increase the efficiency of low cost solar cells : 10% >15%

ANR 2007 : SPARCSINL + CEA-LITEN / INES + CEA / LETI +….

24/06/2009

inl.cnrs.fr


From heterogeneous bonding to Monolithicintegration on silicon

Si (001)

SrTiO3

5nm

NFs InP/STO

Si

NFs InP

• III-V heterostructures bonded on Si• Strain relaxed membranes on host substrate• Compliant substrates

III-V nanowires on Si (100)For nanoelectronic, optoelectronic, photovoltaic applications

Monolithic integration of crystalline functionnal oxides on SrTiO3 / Si(001) templates for MEMS/NEMS….

LETI

INL

Documents

Lyon Institute ofleti.congres-scientifique.com/annualreview2009/... · 24/06/2009 inl.cnrs.fr LETI seeding research within the MINATEC partnership Wednesday, June 24th 2009 NANOLYON