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LE R Q8WP 1 Version 1.5 | 2021-01-15 www.osram-os.com Applications LE R Q8WP OSRAM OSTAR ® Projection Compact Compact light source in SMT technology, glass win- dow on top, RoHS compliant Projection Home LED & Laser Projection Professional LED & Laser Stage Lighting (LED & Laser) Features: Package: compact lightsource in SMT technology with glass window on top Chip technology: Thinfilm Typ. Radiation: 120° (Lambertian emitter) Color: λ dom = 625 nm ( red) Corrosion Robustness Class: 3B ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) Ordering Information Type Luminous Flux 1) Ordering Code I F = 1400 mA Φ V LE R Q8WP-LAMA-34 112 ... 224 lm Q65113A2446 LE R Q8WP-LBMA-34 140 ... 224 lm Q65113A2444

LE R Q8WP - Osram · LE R Q8WP 3 Version 1.5 | 2021-01-15 Characteristics I F = 1400 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 632 nm Dominant Wavelength

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Page 1: LE R Q8WP - Osram · LE R Q8WP 3 Version 1.5 | 2021-01-15 Characteristics I F = 1400 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 632 nm Dominant Wavelength

LE R Q8WP

1 Version 1.5 | 2021-01-15

Produktdatenblatt | Version 1.1 www.osram-os.com

Applications

LE R Q8WP

OSRAM OSTAR® Projection CompactCompact light source in SMT technology, glass win-dow on top, RoHS compliant

— Projection Home LED & Laser

— Projection Professional LED & Laser

— Stage Lighting (LED & Laser)

Features: — Package: compact lightsource in SMT technology with glass window on top

— Chip technology: Thinfilm

— Typ. Radiation: 120° (Lambertian emitter)

— Color: λdom = 625 nm (● red)

— Corrosion Robustness Class: 3B

— ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

Ordering Information

Type Luminous Flux 1) Ordering CodeIF = 1400 mAΦV

LE R Q8WP-LAMA-34 112 ... 224 lm Q65113A2446

LE R Q8WP-LBMA-34 140 ... 224 lm Q65113A2444

Page 2: LE R Q8WP - Osram · LE R Q8WP 3 Version 1.5 | 2021-01-15 Characteristics I F = 1400 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 632 nm Dominant Wavelength

LE R Q8WP

2 Version 1.5 | 2021-01-15

Maximum RatingsParameter Symbol Values

Operating Temperature Top min. max.

-40 °C 100 °C

Storage Temperature Tstg min. max.

-40 °C 100 °C

Junction Temperature Tj max. 125 °C

Forward Current TS = 25 °C

IF min. max.

40 mA 5000 mA

Forward Current pulsed D = 0.5 ; f = 120 Hz; TS = 25 °C

IF pulse 6000 mA

ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

VESD 2 kV

Reverse current 2) IR max. 200 mA

Page 3: LE R Q8WP - Osram · LE R Q8WP 3 Version 1.5 | 2021-01-15 Characteristics I F = 1400 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 632 nm Dominant Wavelength

LE R Q8WP

3 Version 1.5 | 2021-01-15

CharacteristicsIF = 1400 mA; TS = 25 °C

Parameter Symbol Values

Peak Wavelength λpeak typ. 632 nm

Dominant Wavelength 3) λdom min. typ. max.

618 nm 625 nm 632 nm

Spectral bandwidth at 50% Irel,max ∆λ typ. 18 nm

Viewing angle at 50% IV 2φ typ. 120 °

Radiating surface Acolor typ. 1.5 x 1.2 mm²

Partial Flux acc. CIE 127:2007 4) IF = 1400 mA

ΦE/V, 120° typ. 0.82

Forward Voltage 5) IF = 1400 mA

VF min. typ. max.

2.00 V 2.16 V 2.90 V

Reverse voltage (ESD device) VR ESD min. 45 V

Reverse voltage 2) IR = 20 mA

VR max. 1.2 V

Real thermal resistance junction/solderpoint 6) RthJS real typ. max.

2.6 K / W 3.6 K / W

Electrical thermal resistance junction/solderpoint 6) with efficiency ηe = 21 %

RthJS elec. typ. max.

2.1 K / W 2.8 K / W

Page 4: LE R Q8WP - Osram · LE R Q8WP 3 Version 1.5 | 2021-01-15 Characteristics I F = 1400 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 632 nm Dominant Wavelength

LE R Q8WP

4 Version 1.5 | 2021-01-15

Brightness Groups

Group Luminous Flux 1) Luminous Flux 1)

IF = 1400 mA IF = 1400 mAmin. max.ΦV ΦV

LA 112 lm 140 lm

LB 140 lm 180 lm

MA 180 lm 224 lm

Wavelength Groups

Group Dominant Wavelength 3) Dominant Wavelength 3)

min. max.λdom λdom

3 618 nm 624 nm

4 624 nm 632 nm

Group Name on Label Example: LA-3Brightness Wavelength

LA 3

Page 5: LE R Q8WP - Osram · LE R Q8WP 3 Version 1.5 | 2021-01-15 Characteristics I F = 1400 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 632 nm Dominant Wavelength

LE R Q8WP

5 Version 1.5 | 2021-01-15

Relative Spectral Emission 4)

Φrel = f (λ); IF = 1400 mA; TJ = 25 °C

LE R Q8WP

350 400 450 500 550 600 650 700 750 800λ / nm

0.0

0.2

0.4

0.6

0.8

1.0Φrel

: Vλ

: red

Radiation Characteristics 4)

Irel = f (ϕ); TJ = 25 °CLE R Q8WP

-100°

-90°

-80°

-70°

-60°

-50°

-40°

-30°-20°

-10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90°ϕ / °

0.0

0.2

0.4

0.6

0.8

1.0Irel

Page 6: LE R Q8WP - Osram · LE R Q8WP 3 Version 1.5 | 2021-01-15 Characteristics I F = 1400 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 632 nm Dominant Wavelength

LE R Q8WP

6 Version 1.5 | 2021-01-15

Relative Partial Flux 4)

Φv(2φ)/Φv(180°) = f(φ); TJ = 25 °C

0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 1802*ϕ [°]

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0ΦV( ϕ)ΦV(180°)

2

Page 7: LE R Q8WP - Osram · LE R Q8WP 3 Version 1.5 | 2021-01-15 Characteristics I F = 1400 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 632 nm Dominant Wavelength

LE R Q8WP

7 Version 1.5 | 2021-01-15

Forward current 4), 7)

IF = f(VF); TJ = 25 °C

LE R Q8WP

1.7 2.0 2.2 2.4 2.6 2.8 3.0VF / V

40

1000

2000

3000

4000

5000

6000IF / mA

Relative Luminous Flux 4), 7)

Φv/Φv(1400 mA) = f(IF); TJ = 25 °C

LE R Q8WP

4010

0020

0030

0040

0050

0060

00

IF / mA

0

1

2

3

4ΦV

ΦV(1400mA)

Page 8: LE R Q8WP - Osram · LE R Q8WP 3 Version 1.5 | 2021-01-15 Characteristics I F = 1400 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 632 nm Dominant Wavelength

LE R Q8WP

8 Version 1.5 | 2021-01-15

Forward Voltage 4)

ΔVF = VF - VF(25 °C) = f(Tj); IF = 1400 mA

LE R Q8WP

-40 -20 0 20 40 60 80 100 120Tj / °C

-0.3

-0.2

-0.1

0.0

0.1

0.2

0.3∆VF / V

Relative Luminous Flux 4)

Φv/Φv(25 °C) = f(Tj); IF = 1400 mA

LE R Q8WP

-40 -20 0 20 40 60 80 100 120Tj / °C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6Φv

Φv(25°C)

Dominant Wavelength 4)

Δλdom = λdom - λdom(25 °C) = f(Tj); IF = 1400 mALE R Q8WP

-40 -20 0 20 40 60 80 100 120Tj / °C

-10

-8

-6

-4

-2

0

2

4

6

8∆λ dom / nm

Page 9: LE R Q8WP - Osram · LE R Q8WP 3 Version 1.5 | 2021-01-15 Characteristics I F = 1400 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 632 nm Dominant Wavelength

LE R Q8WP

9 Version 1.5 | 2021-01-15

Max. Permissible Forward CurrentIF = f(T)

0 20 40 60 80 100

Ts / °C

0

500

1000

1500

2000

2500

3000

3500

4000

4500

5000

5500IF / mA

LE R Q8WP

: Ts

Permissible Pulse Handling CapabilityIF = f(tp); D: Duty cycle

10-6 10-5 10-4 10-3 0.01 0.1 1 10

Pulse time [s]

5

6

7

IF [A]

TS = 0°C ... 59°CLE R Q8WP

: D = 1.0: D = 0.5: D = 0.2: D = 0.1: D = 0.05: D = 0.02: D = 0.01: D = 0.005

Permissible Pulse Handling CapabilityIF = f(tp); D: Duty cycle

10-6 10-5 10-4 10-3 0.01 0.1 1 10

Pulse time [s]

2

3

4

5

6

7

IF [A]

TS = 100°CLE R Q8WP

: D = 1.0: D = 0.5: D = 0.2: D = 0.1: D = 0.05: D = 0.02: D = 0.01: D = 0.005

Page 10: LE R Q8WP - Osram · LE R Q8WP 3 Version 1.5 | 2021-01-15 Characteristics I F = 1400 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 632 nm Dominant Wavelength

LE R Q8WP

10 Version 1.5 | 2021-01-15

Dimensional Drawing 8)

Further Information:

Approximate Weight: 48.0 mg

Corrosion test: Class: 3B Test condition: 40°C / 90 % RH / 15 ppm H2S / 14 days (stricter than IEC 60068-2-43)

ESD advice: The device is protected by ESD device which is connected in parallel to the Chip.

Page 11: LE R Q8WP - Osram · LE R Q8WP 3 Version 1.5 | 2021-01-15 Characteristics I F = 1400 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 632 nm Dominant Wavelength

LE R Q8WP

11 Version 1.5 | 2021-01-15

Recommended Solder Pad 8)

Recommended Solder Pad 8)

Alternative solder pad for exposedcopper MCPCB - do not use exposed copper MCPCB for automotiveapplications.

Exposed Copper MCPCB must not exceed thickness of 1mm. For superior solder joint connectivity results we recommend soldering under standard nitrogen atmosphere. Package not suitable for any kind of wet cleaning or ultrasonic cleaning.

Page 12: LE R Q8WP - Osram · LE R Q8WP 3 Version 1.5 | 2021-01-15 Characteristics I F = 1400 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 632 nm Dominant Wavelength

LE R Q8WP

12 Version 1.5 | 2021-01-15

Reflow Soldering ProfileProduct complies to MSL Level 2 acc. to JEDEC J-STD-020E

00

s

OHA04525

50

100

150

200

250

300

50 100 150 200 250 300t

T

˚C

St

t

Pt

Tp240 ˚C

217 ˚C

245 ˚C

25 ˚C

L

Profile Feature Symbol Pb-Free (SnAgCu) Assembly UnitMinimum Recommendation Maximum

Ramp-up rate to preheat*)

25 °C to 150 °C2 3 K/s

Time tSTSmin to TSmax

tS 60 100 120 s

Ramp-up rate to peak*)

TSmax to TP

2 3 K/s

Liquidus temperature TL 217 °C

Time above liquidus temperature tL 80 100 s

Peak temperature TP 245 260 °C

Time within 5 °C of the specified peaktemperature TP - 5 K

tP 10 20 30 s

Ramp-down rate*TP to 100 °C

3 6 K/s

Time25 °C to TP

480 s

All temperatures refer to the center of the package, measured on the top of the component* slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range

Page 13: LE R Q8WP - Osram · LE R Q8WP 3 Version 1.5 | 2021-01-15 Characteristics I F = 1400 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 632 nm Dominant Wavelength

LE R Q8WP

13 Version 1.5 | 2021-01-15

Taping 8)

Page 14: LE R Q8WP - Osram · LE R Q8WP 3 Version 1.5 | 2021-01-15 Characteristics I F = 1400 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 632 nm Dominant Wavelength

LE R Q8WP

14 Version 1.5 | 2021-01-15

Tape and Reel 9)

Reel DimensionsA W Nmin W1 W2 max Pieces per PU

180 mm 12 + 0.3 / - 0.1 mm 60 mm 12.4 + 2 mm 18.4 mm 1000

Page 15: LE R Q8WP - Osram · LE R Q8WP 3 Version 1.5 | 2021-01-15 Characteristics I F = 1400 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 632 nm Dominant Wavelength

LE R Q8WP

15 Version 1.5 | 2021-01-15

Barcode-Product-Label (BPL)

Dry Packing Process and Materials 8)

OHA00539

OSRAM

Moisture-sensitive label or print

Barcode label

Desiccant

Humidity indicator

Barcode label

OSRAM

Please check the HIC immidiately afterbag opening.

Discard if circles overrun.Avoid metal contact.

WET

Do not eat.

Comparatorcheck dot

parts still adequately dry.

examine units, if necessary

examine units, if necessary

5%

15%

10%bake units

bake units

If wet,

change desiccant

If wet,

Humidity IndicatorMIL-I-8835

If wet,

Mois

ture

Level 3

Flo

or tim

e 168 H

ours

Mois

ture

Level 6

Flo

or tim

e 6

Hours

a) H

umid

ity In

dicato

r C

ard is

> 1

0% w

hen read a

t 23 ˚

C ±

5 ˚C

, or

reflo

w, v

apor-phase r

eflow

, or equiv

alent p

rocessin

g (peak p

ackage

2. Afte

r th

is b

ag is o

pened, devic

es that w

ill b

e subje

cted to

infrare

d

1. Shelf

life in

seale

d bag: 2

4 month

s at <

40 ˚

C a

nd < 9

0% rela

tive h

umid

ity (R

H).

Mois

ture

Level 5

a

at facto

ry c

onditions o

f

(if b

lank, s

eal date

is id

entical w

ith d

ate c

ode).

a) M

ounted w

ithin

b) S

tore

d at

body tem

p.

3. Devic

es require

bakin

g, befo

re m

ounting, i

f:

Bag s

eal date

Mois

ture

Level 1

Mois

ture

Level 2

Mois

ture

Level 2

a4. If b

aking is

require

d,

b) 2a o

r 2b is

not m

et.

Date

and ti

me o

pened:

refe

rence IP

C/J

ED

EC

J-S

TD

-033 fo

r bake p

rocedure

.

Flo

or tim

e see b

elow

If bla

nk, see b

ar code la

bel

Flo

or tim

e > 1

Year

Flo

or tim

e 1

Year

Flo

or tim

e 4

Weeks10%

RH

.

_<

Mois

ture

Level 4

Mois

ture

Level 5

˚C).

OPTO

SEM

ICO

NDUCTORS

MO

ISTURE S

ENSITIV

E

This b

ag conta

ins

CAUTION

Flo

or tim

e 72 H

ours

Flo

or tim

e 48 H

ours

Flo

or tim

e 24 H

ours

30 ˚C

/60%

RH

.

_<

LE

VE

L

If bla

nk, see

bar code la

bel

Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card according JEDEC-STD-033.

Page 16: LE R Q8WP - Osram · LE R Q8WP 3 Version 1.5 | 2021-01-15 Characteristics I F = 1400 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 632 nm Dominant Wavelength

LE R Q8WP

16 Version 1.5 | 2021-01-15

Chip Technology: M: low (750µm) P: high (2mm²)

Encapsulant Type / Lens Properties W: Window on top

Wavelength Emission Color Color coordinates according (λdom typ.) CIE 1931/Emission color: R: 625 nm red UW: ultra white A: 617 nm amber T: 528 nm true green B: 470 nm blue RTB: amber/true green/blue BR: blue/red CG: color on demand green

LE: Light emitting diode

Package Type Q: OSTAR Compact

Lead / Package Properties 7: 2 Chip Version 8: 1 Chip Version

Type Designation System

LE CG Q 7 W P

Page 17: LE R Q8WP - Osram · LE R Q8WP 3 Version 1.5 | 2021-01-15 Characteristics I F = 1400 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 632 nm Dominant Wavelength

LE R Q8WP

17 Version 1.5 | 2021-01-15

NotesThe evaluation of eye safety occurs according to the standard IEC 62471:2006 (photo biological safety of lamps and lamp systems). Within the risk grouping system of this IEC standard, the device specified in this data sheet falls into the class exempt group (exposure time 10000 s). Under real circumstances (for expo-sure time, conditions of the eye pupils, observation distance), it is assumed that no endangerment to the eye exists from these devices. As a matter of principle, however, it should be mentioned that intense light sources have a high secondary exposure potential due to their blinding effect. When looking at bright light sources (e.g. headlights), temporary reduction in visual acuity and afterimages can occur, leading to irrita-tion, annoyance, visual impairment, and even accidents, depending on the situation.

Subcomponents of this device contain, in addition to other substances, metal filled materials including silver. Metal filled materials can be affected by environments that contain traces of aggressive substances. There-fore, we recommend that customers minimize device exposure to aggressive substances during storage, production, and use. Devices that showed visible discoloration when tested using the described tests above did show no performance deviations within failure limits during the stated test duration. Respective failure limits are described in the IEC60810.

For further application related information please visit www.osram-os.com/appnotes

Disclaimer

Attention please!The information describes the type of component and shall not be considered as assured characteristics.Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances.For information on the types in question please contact our Sales Organization.If printed or downloaded, please find the latest version on the OSRAM OS website.

PackingPlease use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.

Product and functional safety devices/applications or medical devices/applicationsOSRAM OS components are not developed, constructed or tested for the application as safety relevant component or for the application in medical devices.OSRAM OS products are not qualified at module and system level for such application.

In case buyer – or customer supplied by buyer – considers using OSRAM OS components in product safety devices/applications or medical devices/applications, buyer and/or customer has to inform the local sales partner of OSRAM OS immediately and OSRAM OS and buyer and /or customer will analyze and coordi-nate the customer-specific request between OSRAM OS and buyer and/or customer.

Page 18: LE R Q8WP - Osram · LE R Q8WP 3 Version 1.5 | 2021-01-15 Characteristics I F = 1400 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 632 nm Dominant Wavelength

LE R Q8WP

18 Version 1.5 | 2021-01-15

Glossary1) Brightness: Brightness values are measured during a current pulse of typically 25 ms, with an internal

reproducibility of ±8 % and an expanded uncertainty of ±11 % (acc. to GUM with a coverage factor of k = 3).

2) Reverse Operation: This product is intended to be operated applying a forward current within the specified range. Applying any continuous reverse bias or forward bias below the voltage range of light emission shall be avoided because it may cause migration which can change the electro-optical char-acteristics or damage the LED.

3) Wavelength: The wavelength is measured at a current pulse of typically 25 ms, with an internal repro-ducibility of ±0.5 nm and an expanded uncertainty of ±1 nm (acc. to GUM with a coverage factor of k = 3).

4) Typical Values: Due to the special conditions of the manufacturing processes of semiconductor devic-es, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could dif-fer from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice.

5) Forward Voltage: The forward voltage is measured during a current pulse of typically 8 ms, with an internal reproducibility of ±0.05 V and an expanded uncertainty of ±0.1 V (acc. to GUM with a coverage factor of k = 3).

6) Thermal Resistance: Rth max is based on statistic values (6σ).7) Characteristic curve: In the range where the line of the graph is broken, you must expect higher differ-

ences between single devices within one packing unit.8) Tolerance of Measure: Unless otherwise noted in drawing, tolerances are specified with ±0.1 and

dimensions are specified in mm.9) Tape and Reel: All dimensions and tolerances are specified acc. IEC 60286-3 and specified in mm.

Page 19: LE R Q8WP - Osram · LE R Q8WP 3 Version 1.5 | 2021-01-15 Characteristics I F = 1400 mA; T S = 25 °C Parameter Symbol Values Peak Wavelength λ peak typ. 632 nm Dominant Wavelength

LE R Q8WP

19 Version 1.5 | 2021-01-15

Revision HistoryVersion Date Change

1.3 2018-11-29 Characteristics Electro - Optical Characteristics (Diagrams)

1.4 2020-06-03 Schematic Transportation Box Dimensions of Transportation Box

1.5 2021-01-14 Ordering Information Brightness Groups

Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93055 Regensburg www.osram-os.com © All Rights Reserved.